Abstract: An image capturing device is disclosed that includes a light receiving element having a light receiving surface, a plate-like transparent member provided on the light receiving surface of the light receiving element, and resin provided to at least the periphery of the plate-like transparent member. The plate-like transparent member includes a first principal plane positioned on the light receiving element side and a second principal plane opposite the first principal plane. The first principal plane is greater in area than the second principal plane.

Abstract: An image pickup device is disclosed that has little deformation caused by thermal expansion of a transparent resin for sealing an image pickup element. The image pickup device includes an image pickup element having a light receiving surface, a micro-lens for condensing incident light to the image pickup element, a first transparent plate disposed on the light receiving surface of the image pickup element with the micro-lens in between, a transparent resin that seals the image pickup element and the first transparent plate, and a second transparent plate disposed on the transparent resin to face the first transparent plate.

Abstract: A semiconductor device is provided that forms a three-dimensional semiconductor device having semiconductor devices stacked on one another. In this semiconductor device, a hole is formed in a silicon semiconductor substrate that has an integrated circuit unit and an electrode pad formed on a principal surface on the outer side. The hole is formed by etching, with the electrode pad serving as an etching stopper layer. An embedded electrode is formed in the hole. This embedded electrode serves to electrically lead the electrode pad to the principal surface on the bottom side of the silicon semiconductor substrate.