Patents by Inventor Yoshitomo HASHIMOTO

Yoshitomo HASHIMOTO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240170280
    Abstract: There is provided a technique that includes: (a) forming an inhibitor layer on a surface of a first material of a concave portion provided on a surface of a substrate, by supplying a precursor to the substrate to adsorb at least a portion of a molecular structure of molecules constituting the precursor on the surface of the first material of the concave portion, the concave portion being composed of the first material containing a first element and a second material containing a second element different from the first element; (b) growing a film on a surface of the second material of the concave portion by supplying a film-forming material to the substrate having the inhibitor layer formed on the surface of the first material; and (c) forming a hydroxyl group termination on the surface of the first material before performing (a).
    Type: Application
    Filed: January 25, 2024
    Publication date: May 23, 2024
    Applicant: Kokusai Electric Corporation
    Inventors: Yoshitomo HASHIMOTO, Kimihiko NAKATANI, Takayuki WASEDA
  • Publication number: 20240153758
    Abstract: There is included forming an oxide film on a substrate by alternately performing: forming the first oxide film containing an atom X by performing a first cycle including non-simultaneously performing forming a first layer including a component in which a first functional group is bonded to the atom X, and forming a second layer containing the atom X and oxygen by oxidizing the first layer; and forming the second oxide film containing the atom X by performing a second cycle including non-simultaneously performing forming a third layer including a component in which the first functional group is bonded to the atom X, and forming a fourth layer containing the atom X and oxygen by oxidizing the third layer, under a processing condition that an oxidizing power is higher than an oxidizing power when oxidizing the first layer.
    Type: Application
    Filed: January 12, 2024
    Publication date: May 9, 2024
    Applicant: Kokusai Electric Corporation
    Inventors: Tomiyuki SHIMIZU, Masaya NAGATO, Takashi OZAKI, Yoshitomo HASHIMOTO, Katsuyoshi HARADA
  • Patent number: 11978623
    Abstract: There is provided a technique that includes: forming an oxide film containing an atom X of a precursor on a substrate by performing a cycle a predetermined number of times. The cycle including non-simultaneously performing: (a) forming a first layer containing a component in which a first group is bonded to the atom X on the substrate by supplying the precursor having a molecular structure in which the first and second groups are bonded to the atom X, to the substrate, the first group containing an alkoxy group, and the second group containing at least one of an amino group, an alkyl group, a halogeno group, a hydroxy group, a hydro group, an aryl group, a vinyl group, and a nitro group; and (b) forming a second layer containing the atom X by supplying an oxidizing agent to the substrate to oxidize the first layer.
    Type: Grant
    Filed: November 8, 2022
    Date of Patent: May 7, 2024
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Yoshitomo Hashimoto, Katsuyoshi Harada, Kimihiko Nakatani, Yoshiro Hirose, Masaya Nagato, Takashi Ozaki, Tomiyuki Shimizu
  • Publication number: 20240136200
    Abstract: There is provide a technique that includes: etching a base on a surface of a substrate by performing a cycle, the cycle including: (a) forming a layer on a surface of the base by exposing the base to a modifying agent; and (b) causing a reaction between a halogen-containing radical and the base by exposing the layer to a halogen-containing gas such that the layer reacts with the halogen-containing gas to generate the halogen-containing radical.
    Type: Application
    Filed: December 29, 2023
    Publication date: April 25, 2024
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Motomu Degai, Kimihiko Nakatani, Takashi Nakagawa, Takayuki Waseda, Yoshitomo Hashimoto
  • Patent number: 11967499
    Abstract: There is provided a technique that includes (a) forming a first film having a first thickness on an underlayer by supplying a first process gas not including oxidizing gas to a substrate, wherein the first film contains silicon, carbon, and nitrogen and does not contain oxygen, and the underlayer is exposed on a surface of the substrate and is at least one selected from the group of a conductive metal-element-containing film and a nitride film; and (b) forming a second film having a second thickness larger than the first thickness on the first film by supplying a second process gas including oxidizing gas to the substrate, wherein the second film contains silicon, oxygen, and nitrogen, and wherein in (b), oxygen atoms derived from the oxidizing gas and diffuse from a surface of the first film toward the underlayer are absorbed by the first film and the first film is modified.
    Type: Grant
    Filed: October 31, 2022
    Date of Patent: April 23, 2024
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Yoshitomo Hashimoto, Tatsuru Matsuoka
  • Patent number: 11961733
    Abstract: There is included forming an oxide film on a substrate by alternately performing: forming the first oxide film containing an atom X by performing a first cycle including non-simultaneously performing forming a first layer including a component in which a first functional group is bonded to the atom X, and forming a second layer containing the atom X and oxygen by oxidizing the first layer; and forming the second oxide film containing the atom X by performing a second cycle including non-simultaneously performing forming a third layer including a component in which the first functional group is bonded to the atom X, and forming a fourth layer containing the atom X and oxygen by oxidizing the third layer, under a processing condition that an oxidizing power is higher than an oxidizing power when oxidizing the first layer.
    Type: Grant
    Filed: September 7, 2021
    Date of Patent: April 16, 2024
    Assignee: Kokusai Electric Corporation
    Inventors: Tomiyuki Shimizu, Masaya Nagato, Takashi Ozaki, Yoshitomo Hashimoto, Katsuyoshi Harada
  • Publication number: 20240112907
    Abstract: There is provided a technique that includes: (a) forming an oxide layer containing a predetermined element on a first film formed on a substrate by supplying a precursor gas containing the predetermined element to the substrate such that hydroxyl group terminations are formed on a surface of the oxide layer and a density of the hydroxyl group terminations on the oxide layer is higher than a density of hydroxyl group terminations on a surface of the first film before (a); and (b) hydrophobizing the surface of the oxide layer by supplying a modifying gas containing a hydrocarbon group to the substrate.
    Type: Application
    Filed: September 15, 2023
    Publication date: April 4, 2024
    Applicant: Kokusai Electric Corporation
    Inventors: Shoma MIYATA, Kimihiko NAKATANI, Takayuki WASEDA, Yoshitomo HASHIMOTO, Yoshiro HIROSE
  • Patent number: 11935742
    Abstract: There is provided a technique that includes: (a) forming a film formation suppression layer on a surface of a first material of a concave portion of the substrate, by supplying a precursor to the substrate provided with the concave portion on a surface of the substrate to adsorb at least a portion of a molecular structure of molecules constituting the precursor on the surface of the first material of the concave portion, the concave portion having a top surface and a side surface composed of the first material containing a first element and a bottom surface composed of a second material containing a second element; and (b) growing a film on a surface of the second material of the concave portion by supplying a film-forming material to the substrate having the film formation suppression layer formed on the surface of the first material.
    Type: Grant
    Filed: December 14, 2022
    Date of Patent: March 19, 2024
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Yoshitomo Hashimoto, Kimihiko Nakatani, Takayuki Waseda
  • Publication number: 20240087946
    Abstract: There is provided a technique that includes: a substrate mounting table vertically movable and incorporating a heating mechanism; a process chamber divided by the substrate mounting table into a process region where a substrate is processed and a transfer region where transfer of the substrate is performed; a cooling gas supply system that supplies a cooling gas into the process chamber; a cleaning gas supply system that supplies a cleaning gas into the process chamber; an exhaust system that exhausts the process chamber; a controller capable of controlling the substrate mounting table, the cooling gas supply system, the cleaning gas supply system, and the exhaust system to perform: supplying the cooling gas into the process chamber in a state where the substrate mounting table is moved below the process region; and supplying the cleaning gas into the process chamber at a temperature lower than a temperature during substrate processing.
    Type: Application
    Filed: September 14, 2023
    Publication date: March 14, 2024
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Yoshitomo HASHIMOTO, Naofumi OHASHI
  • Publication number: 20240071752
    Abstract: There is provided a technique that includes: (a) modifying a surface of a first base exposed on a surface of a substrate to be terminated with a hydrocarbon group by supplying a hydrocarbon group-containing gas to the substrate having the first base and a second base exposed on the surface of the substrate; and (b) selectively forming a film on a surface of the second base by supplying an oxygen- and hydrogen-containing gas to the substrate after modifying the surface of the first base.
    Type: Application
    Filed: November 6, 2023
    Publication date: February 29, 2024
    Applicant: KOKUSAI ELECTRIC CORPORATION
    Inventors: Takayuki WASEDA, Takashi NAKAGAWA, Kimihiko NAKATANI, Motomu DEGAI, Takao IZAKI, Yoshitomo HASHIMOTO
  • Patent number: 11894239
    Abstract: There is provide a technique that includes: etching a base on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including: (a) forming a layer on a surface of the base by supplying a modifying agent to the base; and (b) causing a reaction between a halogen-containing radical and the base by supplying a halogen-containing gas to the layer such that the layer reacts with the halogen-containing gas to generate the halogen-containing radical.
    Type: Grant
    Filed: March 11, 2022
    Date of Patent: February 6, 2024
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Motomu Degai, Kimihiko Nakatani, Takashi Nakagawa, Takayuki Waseda, Yoshitomo Hashimoto
  • Publication number: 20240038530
    Abstract: There is provided a technique that includes: forming a film containing Si, O and N or a film containing Si and O on a substrate by performing a cycle a predetermined number of times under a condition where SiCl4 is not gas-phase decomposed, the cycle including non-simultaneously performing: (a) forming NH termination on a surface of the substrate by supplying a first reactant containing N and H to the substrate; (b) forming a SiN layer having SiCl termination formed on its surface by supplying the SiCl4 as a precursor to the substrate to react the NH termination formed on the surface of the substrate with the SiCl4; and (c) reacting the SiN layer having the SiCl termination with a second reactant containing O by supplying the second reactant to the substrate.
    Type: Application
    Filed: October 9, 2023
    Publication date: February 1, 2024
    Applicant: Kokusai Electric Corporation
    Inventors: Katsuyoshi HARADA, Yoshitomo HASHIMOTO, Tatsuru MATSUOKA
  • Publication number: 20240030026
    Abstract: There is provided a technique that includes (a) forming a first adsorption-inhibiting layer by adsorbing at least a portion of a molecular structure of molecules constituting a first precursor on a surface of a first base by supplying the first precursor to a substrate including the first base and a second base on a surface of the substrate, (b) forming an adsorption-promoting layer on a surface of the second base by supplying a reactant to the substrate, (c) forming a second adsorption-inhibiting layer by adsorbing at least a portion of a molecular structure of molecules constituting a second precursor on a surface of the adsorption-promoting layer by supplying the second precursor, which is different in molecular structure from the first precursor, to the substrate, and (d) forming a film on the surface of the first base by supplying a film-forming substance to the substrate subjected to (a), (b), and (c).
    Type: Application
    Filed: October 4, 2023
    Publication date: January 25, 2024
    Applicant: Kokusai Electric Corporation
    Inventors: Shoma MIYATA, Kimihiko NAKATANI, Takayuki WASEDA, Yoshitomo HASHIMOTO
  • Publication number: 20240014032
    Abstract: There is included (a) loading a substrate where a conductive metal-element-containing film is exposed on a surface of the substrate into a process chamber under a first temperature; (b) supplying a reducing gas to the substrate while raising a temperature of the substrate to a second temperature higher than the first temperature in the process chamber; (c) forming a first film on the metal-element-containing film, by supplying a first process gas, which does not include an oxidizing gas, to the substrate under the second temperature in the process chamber; and (d) forming a second film on the first film such that the second film is thicker than the first film, by supplying a second process gas, which includes an oxidizing gas, to the substrate under a third temperature higher than the first temperature in the process chamber.
    Type: Application
    Filed: September 25, 2023
    Publication date: January 11, 2024
    Applicant: Kokusai Electric Corporation
    Inventors: Kazuhiro HARADA, Masayoshi Minami, Shintaro Kogura, Shogo Otani, Yoshitomo Hashimoto
  • Patent number: 11848203
    Abstract: A technique includes: (a) modifying a surface of a first base exposed on a surface of a substrate to be terminated with a hydrocarbon group by supplying a hydrocarbon group-containing gas to the substrate having the first base and a second base exposed on the surface of the substrate; and (b) forming a film on a surface of the second base by supplying an oxygen- and hydrogen-containing gas to the substrate after modifying the surface of the first base.
    Type: Grant
    Filed: December 23, 2020
    Date of Patent: December 19, 2023
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Takayuki Waseda, Takashi Nakagawa, Kimihiko Nakatani, Motomu Degai, Takao Izaki, Yoshitomo Hashimoto
  • Patent number: 11823886
    Abstract: There is included (a) loading a substrate where a conductive metal-element-containing film is exposed on a surface of the substrate into a process chamber under a first temperature; (b) supplying a reducing gas to the substrate while raising a temperature of the substrate to a second temperature higher than the first temperature in the process chamber; (c) forming a first film on the metal-element-containing film, by supplying a first process gas, which does not include an oxidizing gas, to the substrate under the second temperature in the process chamber; and (d) forming a second film on the first film such that the second film is thicker than the first film, by supplying a second process gas, which includes an oxidizing gas, to the substrate under a third temperature higher than the first temperature in the process chamber.
    Type: Grant
    Filed: September 2, 2021
    Date of Patent: November 21, 2023
    Assignee: Kokusai Electric Corporation
    Inventors: Kazuhiro Harada, Masayoshi Minami, Shintaro Kogura, Shogo Otani, Yoshitomo Hashimoto
  • Patent number: 11817314
    Abstract: There is provided a technique that includes: forming a film containing Si, O and N or a film containing Si and O on a substrate by performing a cycle a predetermined number of times under a condition where SiCl4 is not gas-phase decomposed, the cycle including non-simultaneously performing: (a) forming NH termination on a surface of the substrate by supplying a first reactant containing N and H to the substrate; (b) forming a SiN layer having SiCl termination formed on its surface by supplying the SiCl4 as a precursor to the substrate to react the NH termination formed on the surface of the substrate with the SiCl4; and (c) reacting the SiN layer having the SiCl termination with a second reactant containing O by supplying the second reactant to the substrate.
    Type: Grant
    Filed: October 8, 2021
    Date of Patent: November 14, 2023
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Katsuyoshi Harada, Yoshitomo Hashimoto, Tatsuru Matsuoka
  • Publication number: 20230307246
    Abstract: There is provided a technique that includes: etching a first film exposed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first modified layer in at least a portion of a surface of the first film by supplying a first gas to the substrate; and (b) etching at least a portion of the first film with an etching species, the etching species being generated by supplying a second gas having a molecular structure different from that of the first gas to the substrate to perform at least one selected from the group of causing the second gas to react with the first modified layer and activating the first modified layer with the second gas.
    Type: Application
    Filed: May 22, 2023
    Publication date: September 28, 2023
    Applicant: Kokusai Electric Corporation
    Inventors: Kimihiko NAKATANI, Ryota Ueno, Motomu Degai, Takashi Nakagawa, Yoshitomo Hashimoto, Yoshiro Hirose
  • Publication number: 20230287567
    Abstract: There is provided a technique that includes: (a) forming an inhibitor layer on a first surface of a substrate, which includes the first surface and a second surface, by supplying a modifying agent that reacts with the first surface to the substrate; (b) forming a first film on the second surface by supplying a first film-forming agent, at least a portion of which being provided with a first energy, to the substrate in which the inhibitor layer is formed on the first surface; and (c) forming a second film on the first film formed on the second surface by supplying a second film-forming agent, at least a portion of which being provided with a second energy which is higher than the first energy, to the substrate in which the first film is formed on the second surface.
    Type: Application
    Filed: February 10, 2023
    Publication date: September 14, 2023
    Applicant: Kokusai Electric Corporation
    Inventors: Kimihiko Nakatani, Yoshitomo Hashimoto
  • Patent number: 11728165
    Abstract: There is included (a) forming a first film containing at least oxygen and carbon and having a concentration of carbon, which is 20 at % or more, on a substrate by supplying a film-forming gas to the substrate at a first temperature; and (b) modifying the first film into a second film by supplying an oxygen- and hydrogen-containing gas to the substrate on which the first film is formed, at a second temperature that is equal to or higher than the first temperature.
    Type: Grant
    Filed: March 3, 2021
    Date of Patent: August 15, 2023
    Assignee: KOKUSAI ELECTRIC CORPORATION
    Inventors: Hiroki Yamashita, Yoshitomo Hashimoto