Abstract: There is provided a technique that includes (a) forming a first film having a first thickness on an underlayer by supplying a first process gas not including oxidizing gas to a substrate, wherein the first film contains silicon, carbon, and nitrogen and does not contain oxygen, and the underlayer is exposed on a surface of the substrate and is at least one selected from the group of a conductive metal-element-containing film and a nitride film; and (b) forming a second film having a second thickness larger than the first thickness on the first film by supplying a second process gas including oxidizing gas to the substrate, wherein the second film contains silicon, oxygen, and nitrogen, and wherein in (b), oxygen atoms derived from the oxidizing gas and diffuse from a surface of the first film toward the underlayer are absorbed by the first film and the first film is modified.

Abstract: There is provided a technique, including: (a) forming NH termination on a surface of a substrate by supplying a first reactant containing N and H to the substrate; (b) forming a first SiN layer having SiCl termination formed on its surface by supplying SiCl4 as a precursor to the substrate to react the NH termination formed on the surface of the substrate with the SiCl4; (c) forming a second SiN layer having NH termination formed on its surface by supplying a second reactant containing N and H to the substrate to react the SiCl termination formed on the surface of the first SiN layer with the second reactant; and (d) forming a SiN film on the substrate by performing a cycle a predetermined number of times under a condition where the SiCl4 is not gas-phase decomposed after performing (a), the cycle including non-simultaneously performing (b) and (c).

Abstract: There is provided a technique that includes (a) forming a film containing silicon, carbon and nitrogen having a carbon concentration within a range from 10 at % to 15 at % on a substrate; (b) performing an oxidation process with respect to the substrate where the film is exposed on a surface thereof; and (c) performing a process using hydrogen fluoride with respect to the substrate where the film is exposed on the surface thereof after the oxidation process is performed.

Abstract: There is provided a technique, including: (a) forming NH termination on a surface of a substrate by supplying a first reactant containing N and H to the substrate; (b) forming a first SiN layer having SiCl termination formed on its surface by supplying SiCl4 as a precursor to the substrate to react the NH termination formed on the surface of the substrate with the SiCl4; (c) forming a second SiN layer having NH termination formed on its surface by supplying a second reactant containing N and H to the substrate to react the SiCl termination formed on the surface of the first SiN layer with the second reactant; and (d) forming a SiN film on the substrate by performing a cycle a predetermined number of times under a condition where the SiCl4 is not gas-phase decomposed after performing (a), the cycle including non-simultaneously performing (b) and (c).

Abstract: There is provided a technique that includes forming a first film including a ring-shaped structure composed of silicon and carbon and containing nitrogen so as to fill a recess formed in a surface of a substrate by performing a cycle a predetermined number of times, and performing post-treatment by supplying an oxidizing agent to the substrate under a condition that the ring-shaped structure included in the first film is preserved. The cycle includes non-simultaneously performing supplying a precursor including the ring-shaped structure and containing halogen to the substrate with the recess formed in the surface, and supplying a nitriding agent to the substrate, wherein the cycle is performed under a condition that the ring-shaped structure included in the precursor is preserved.

Abstract: A method of manufacturing a semiconductor device, includes forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes non-simultaneously performing (a) supplying a precursor containing a first element to the substrate, (b) supplying a plasma-excited nitrogen gas to the substrate after the act (a), (c) supplying a reactant containing a second element to the substrate after the act (b), and (d) supplying a plasma-excited nitrogen gas to the substrate after the act (c). A gas purge of a space where the substrate is located and vacuumization of the space without gas supply are not performed between the act (a) and the act (b) and between the act (c) and the act (d).

Abstract: There is provided a technique that includes: (a) forming a first film containing boron and at least first bonds selected from the group of Si—C bonds and Si—N bonds on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a boron-containing pseudo-catalyst gas to the substrate; and supplying a first precursor gas containing at least the first bonds selected from the group of the Si—C bonds and the Si—N bonds to the substrate; (b) modifying the first film to a second film by supplying a gas containing hydrogen and oxygen to the substrate; and (c) modifying the second film to a third film by performing a thermal annealing process to the second film.

Abstract: There is provided a technique that includes arranging a plurality of substrates inside a process container in a vertical direction; and forming a film on each of the plurality of substrates by supplying a process gas into the process container. The act of forming the film includes: supplying the process gas into the process container; and performing pressure control such that a pressure inside the process container becomes a process pressure. A start timing of the act of supplying the process gas is adjusted with respect to a start timing of the act of performing the pressure control to adjust a thickness of a film formed on a substrate arranged on an upper portion of the plurality of substrates.

Abstract: There is provided a technique which includes: forming a film containing at least Si, O and N on a substrate in a process chamber by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: forming a first layer by supplying a precursor gas containing at least a Si—N bond and a Si—Cl bond and a first catalyst gas to the substrate; exhausting the precursor gas and the first catalyst gas in the process chamber through an exhaust system; forming a second layer by supplying an oxidizing gas and a second catalyst gas to the substrate to modify the first layer; and exhausting the oxidizing gas and the second catalyst gas in the process chamber through the exhaust system.

Abstract: There is provided a technique that includes: (a) forming a first film including a cyclic structure composed of silicon and carbon and also including nitrogen so as to fill a recess formed in a surface of a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor including the cyclic structure and also including halogen to the substrate having the recess formed on its surface; and supplying a nitriding agent to the substrate; (b) converting the first film into a second film including the cyclic structure and also including oxygen by supplying a first oxidizing agent to the substrate; and (c) converting the second film into a third film including silicon and oxygen and not including carbon and nitrogen by supplying a second oxidizing agent to the substrate.

Abstract: The present disclosure provides a technique including a method of manufacturing a semiconductor device, which is capable of improving the characteristics of a film formed on a substrate. The method of manufacturing a semiconductor device may include: (a) forming a first film containing a predetermined element, oxygen, carbon and nitrogen on a substrate; and (b) forming a second film thinner than the first film on a top surface of the first film, the second film having an oxygen concentration lower than an oxygen concentration of the first film or having oxygen and carbon concentrations lower than oxygen and carbon concentrations of the first film.

Abstract: There is provided a technique that includes: forming a film containing Si, O and N or a film containing Si and O on a substrate by performing a cycle a predetermined number of times under a condition where SiCl4 is not gas-phase decomposed, the cycle including non-simultaneously performing: (a) forming NH termination on a surface of the substrate by supplying a first reactant containing N and H to the substrate; (b) forming a SiN layer having SiCl termination formed on its surface by supplying the SiCl4 as a precursor to the substrate to react the NH termination formed on the surface of the substrate with the SiCl4; and (c) reacting the SiN layer having the SiCl termination with a second reactant containing O by supplying the second reactant to the substrate

Abstract: There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.

Abstract: There is provided a technique, including: (a) forming NH termination on a surface of a substrate by supplying a first reactant containing N and H to the substrate; (b) forming a first SiN layer having SiCl termination formed on its surface by supplying SiCl4 as a precursor to the substrate to react the NH termination formed on the surface of the substrate with the SiCl4; (c) forming a second SiN layer having NH termination formed on its surface by supplying a second reactant containing N and H to the substrate to react the SiCl termination formed on the surface of the first SiN layer with the second reactant; and (d) forming a SiN film on the substrate by performing a cycle a predetermined number of times under a condition where the SiCl4 is not gas-phase decomposed after performing (a), the cycle including non-simultaneously performing (b) and (c).

Abstract: There is provided a technique that includes (a) forming a film containing silicon, carbon and nitrogen having a carbon concentration within a range from 10 at % to 15 at % on a substrate; (b) performing an oxidation process with respect to the substrate where the film is exposed on a surface thereof; and (c) performing a process using hydrogen fluoride with respect to the substrate where the film is exposed on the surface thereof after the oxidation process is performed.

Abstract: There is provided a technique that includes forming a first film including a ring-shaped structure composed of silicon and carbon and containing nitrogen so as to fill a recess formed in a surface of a substrate by performing a cycle a predetermined number of times, and performing post-treatment by supplying an oxidizing agent to the substrate under a condition that the ring-shaped structure included in the first film is preserved. The cycle includes non-simultaneously performing supplying a precursor including the ring-shaped structure and containing halogen to the substrate with the recess formed in the surface, and supplying a nitriding agent to the substrate, wherein the cycle is performed under a condition that the ring-shaped structure included in the precursor is preserved.

Abstract: There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.

Abstract: There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.

Abstract: There is provided a method of manufacturing a semiconductor device, which includes: forming a first seed layer containing silicon and germanium on a substrate by performing, a predetermined number of times, a cycle which includes supplying a first process gas containing silicon or germanium and containing a halogen element to the substrate, supplying a second process gas containing silicon and not containing a halogen element to the substrate, and supplying a third process gas containing germanium and not containing a halogen element to the substrate; and forming a germanium-containing film on the first seed layer by supplying a fourth process gas containing germanium and not containing a halogen element to the substrate.

Abstract: There is provided a method for manufacturing a semiconductor device, including: providing a substrate with an oxide film formed on a surface thereof; pre-processing a surface of the oxide film; and forming a nitride film containing carbon on the surface of the oxide film which has been pre-processed, by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; supplying a carbon-containing gas to the substrate; and supplying a nitrogen-containing gas to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas to the substrate; and supplying a gas containing carbon and nitrogen to the substrate, or by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor gas containing carbon to the substrate; and supplying a nitrogen-containing gas to the substrate.