Abstract: A method of manufacturing a light source device includes: disposing bumps containing a first metal on a first substrate which is thermally conductive; disposing a bonding member on the bumps, the bonding member containing Au—Sn alloy; disposing a light emitting element on the bumps and the bonding member; and heating the first substrate equipped with the bumps, the bonding member, and the light emitting element.

Abstract: A hydroelectric power generation system includes a water turbine disposed in a channel that carries a flow of a fluid, a generator driven by the water turbine, and a controller that performs a first control. The channel includes a first channel located on an inflow side of the water turbine. The controller controls, in the first control, a flow rate or a head of the water turbine so that any one of a pressure of the fluid in the first channel, a flow rate of the fluid in the first channel, and a liquid level of the fluid in a first reservoir from which the fluid flows out to the first channel approaches a first target value.

Abstract: A semiconductor device includes an n-type semiconductor layer; a first metal layer provided on the n-type semiconductor layer, the first metal layer including first atoms capable of being n-type impurities in the n-type semiconductor layer; a second metal layer provided on the first metal layer, the second metal layer including titanium atoms; a third metal layer provided on the second metal layer; and a second atom capable of being a p-type impurity in the n-type semiconductor layer. The second atom and a part of the titanium atoms are included in a vicinity of an interface between the first metal layer and the second metal layer.

Abstract: A hydroelectric power generation system includes a water turbine disposed in a channel that carries a flow of a fluid, a generator driven by the water turbine, and a controller that performs a first control. The channel includes a first channel located on an inflow side of the water turbine. The controller controls, in the first control, a flow rate or a head of the water turbine so that any one of a pressure of the fluid in the first channel, a flow rate of the fluid in the first channel, and a liquid level of the fluid in a first reservoir from which the fluid flows out to the first channel approaches a first target value.

Abstract: A semiconductor device includes an n-type semiconductor layer; a first metal layer provided on the n-type semiconductor layer, the first metal layer including first atoms capable of being n-type impurities in the n-type semiconductor layer; a second metal layer provided on the first metal layer, the second metal layer including titanium atoms; a third metal layer provided on the second metal layer; and a second atom capable of being a p-type impurity in the n-type semiconductor layer. The second atom and a part of the titanium atoms are included in a vicinity of an interface between the first metal layer and the second metal layer.

Abstract: A semiconductor device includes an n-type semiconductor layer; a first metal layer provided on the n-type semiconductor layer, the first metal layer including first atoms capable of being n-type impurities in the n-type semiconductor layer; a second metal layer provided on the first metal layer, the second metal layer including titanium atoms; a third metal layer provided on the second metal layer; and a second atom capable of being a p-type impurity in the n-type semiconductor layer. The second atom and a part of the titanium atoms are included in a vicinity of an interface between the first metal layer and the second metal layer.

Abstract: A hydroelectric generation system includes a fluid machine disposed in a penstock or channel, a generator driven by the fluid machine, and a control unit configured to generate a predetermined torque in the generator. Fluid flows through the penstock or channel. The penstock or channel has a main path in which the fluid machine is disposed, and a detour disposed in parallel with the main path. The detour includes an on-off valve. The on-off valve is opened when not electrified, and closed when electrified.

Abstract: A semiconductor device includes an n-type semiconductor layer; a first metal layer provided on the n-type semiconductor layer, the first metal layer including first atoms capable of being n-type impurities in the n-type semiconductor layer; a second metal layer provided on the first metal layer, the second metal layer including titanium atoms; a third metal layer provided on the second metal layer; and a second atom capable of being a p-type impurity in the n-type semiconductor layer. The second atom and a part of the titanium atoms are included in a vicinity of an interface between the first metal layer and the second metal layer.

Abstract: A hydroelectric generation system includes a fluid machine disposed in a penstock or channel, a generator driven by the fluid machine, and a control unit configured to generate a predetermined torque in the generator. Fluid flows through the penstock or channel. The penstock or channel has a main path in which the fluid machine is disposed, and a detour disposed in parallel with the main path. The detour includes an on-off valve. The on-off valve is opened when not electrified, and closed when electrified.

Abstract: Provided is an image forming apparatus that creates a part of a printed product including a first print medium on which a first image is preliminarily formed, the image forming apparatus includes an image former that forms an image on a print medium; an acquisitor that acquires image information in a print medium; and a hardware processor that, in a case of forming a second image on a second print medium that is a part of the printed product, controls the image former to form a third image on a third print medium, and to correct a position of the second image on the basis of image information of the first image and image information of the third image acquired from the acquisitor.

Abstract: A UI program is recorded on a non-transitory computer readable medium for operating a computer as a print control apparatus in cooperation with a driver core module. The UI program causes the computer to execute: a first display control step of running a display program and displaying first setting items EC? (EC1 to EC5 and EC41), and a second display control step of running a default program and displaying a second setting item EC? (EC42) which cannot be displayed by the display program. In the second display control step, the second setting item EC? (EC42) is displayed in a position adjacent to one of the first setting items EC? (EC41) having the same group information as the second setting item EC? (EC42).

Abstract: A non-transitory recording medium storing a computer readable program causes a computer to execute: a) analyzing unconverted first page description language data to determine whether a repetitive pattern image portion is included in the first page description language data; b) separating the repetitive pattern image portion from the first page description language data when it is determined that the repetitive pattern image portion is included in the first page description language data; c) generating first partial data in a second page description language; d) generating second partial data in the second page description language based on a portion other than the repetitive pattern image portion of the first page description language data; and e) generating converted data that relates to the first page description language data and is second page description language data based on the first partial data and the second partial data.

Abstract: According to one embodiment, a semiconductor wafer includes a substrate, an AlN buffer layer, a foundation layer, a first high Ga composition layer, a high Al composition layer, a low Al composition layer, an intermediate unit and a second high Ga composition layer. The first layer is provided on the foundation layer. The high Al composition layer is provided on the first layer. The low Al composition layer is provided on the high Al composition layer. The intermediate unit is provided on the low Al composition layer. The second layer is provided on the intermediate unit. The first layer has a first tensile strain and the second layer has a second tensile strain larger than the first tensile strain. Alternatively, the first layer has a first compressive strain and the second layer has a second compressive strain smaller than the first compressive strain.

Abstract: An information transmitting device includes: a receiving unit configured to receive setting of a first mode or a second mode as a transmitting mode; a transmitting unit configured to transmit the data in the transmitting mode the setting of which is received; a first obtaining unit configured to obtain identification information associated with a process by an application for setting; a storage unit configured to store the obtained identification information; a second obtaining unit configured to obtain the identification information regarding the transmitting process of the data when the first mode is set; a determining unit configured to determine whether the identification information stored in the storage unit is identical to the identification information obtained by the second obtaining unit; and a switching unit configured to switch the transmitting mode to the second mode when it is determined that the pieces of identification information are not identical to each other.

Abstract: According to one embodiment, a semiconductor wafer includes a substrate, an AlN buffer layer, a foundation layer, a first high Ga composition layer, a high Al composition layer, a low Al composition layer, an intermediate unit and a second high Ga composition layer. The first layer is provided on the foundation layer. The high Al composition layer is provided on the first layer. The low Al composition layer is provided on the high Al composition layer. The intermediate unit is provided on the low Al composition layer. The second layer is provided on the intermediate unit. The first layer has a first tensile strain and the second layer has a second tensile strain larger than the first tensile strain. Alternatively, the first layer has a first compressive strain and the second layer has a second compressive strain smaller than the first compressive strain.

Abstract: A circuit includes: a signal processing unit which is configured to perform signal processing; an amplifying unit which is configured to amplify a signal output from the signal processing unit; a first power supplying path which is extended from a battery to the signal processing unit; a second power supplying path which is branched from the first power supplying path, and which is extended to the amplifying unit; a power limiting unit which is provided in the second power supplying path, and which is configured to limit power flowing in the second power supplying path; and a capacitor which is connected to the second power supplying path, and which is configured to supplement power to be supplied to the amplifying unit.

Abstract: An aspect of the present invention: stores, as print setting histories, contents of print setting as of the time of performing printing and information of documents subjected to printing processing in a print setting history holding unit; displays a list of the print setting histories stored in the print setting history holding unit on a print setting screen on which print setting is performed; and performs a print setting on the basis of a print setting history selected from the list of print setting histories displayed on the print setting screen. Then, in displaying the list of print setting histories on the print setting screen, only the latest print setting history is displayed from among the print setting histories classified into the same group satisfying predetermined conditions.

Abstract: A printer driver operating in an information processing device transmitting print job data to printing devices causes the information processing device to function as: a configuration processing unit configured to hold configuration information about the printer driver, and generate configuration data; a user interface unit configured to generate a print setting screen, and cause a display unit to display the print setting screen; and a drawing unit configured to perform a drawing process on print job data generated in the information processing device, wherein the drawing unit includes specific drawing units prepared for respective model groups classifying the printing devices in accordance with attributes of models of the printing devices, the specific drawing units being configured to perform a model-group-specific drawing process, and selects an appropriate specific drawing unit from among the plurality of specific drawing units, to perform a drawing process with the selected specific drawing unit.

Abstract: A circuit includes: a signal processing unit which is configured to perform signal processing; an amplifying unit which is configured to amplify a signal output from the signal processing unit; a first power supplying path which is extended from a battery to the signal processing unit; a second power supplying path which is branched from the first power supplying path, and which is extended to the amplifying unit; a power limiting unit which is provided in the second power supplying path, and which is configured to limit power flowing in the second power supplying path; and a capacitor which is connected to the second power supplying path, and which is configured to supplement power to be supplied to the amplifying unit.

Abstract: According to one embodiment, a nitride semiconductor device includes a stacked body and a functional layer. The stacked body includes an AlGaN layer of AlxGa1-xN (0<x?1), a first Si-containing layer, a first GaN layer, a second Si-containing layer, and a second GaN layer. The first Si-containing layer contacts an upper surface of the AlGaN layer. The first Si-containing layer contains Si at a concentration not less than 7×1019/cm3 and not more than 4×1020/cm3. The first GaN layer is provided on the first Si-containing layer. The first GaN layer includes a protrusion having an oblique surface tilted with respect to the upper surface. The second Si-containing layer is provided on the first GaN layer. The second Si-containing layer contains Si. The second GaN layer is provided on the second Si-containing layer. The functional layer is provided on the stacked body. The functional layer includes a nitride semiconductor.