Abstract: A power storage module includes: a plurality of power storage elements; a plurality of cooling members each of which has a coolant and a sealing body hermetically sealing the coolant, is stacked on the power storage element, and is configured to form a bulging portion by deformation of the sealing body caused by evaporation of the coolant at an extension portion extending in a region not overlapping the power storage element; and a heat dissipation member that receives heat of the plurality of cooling members and dissipates the heat to an outside. The heat dissipation member has a spacer portion that is disposed between the adjacent extension portions of the plurality of cooling members and is configured to abut with the bulging portion.

Abstract: A power storage module includes: a power storage element; a cooling member that has a coolant and a sealing body hermetically sealing the coolant, is stacked on the power storage element, and is configured to form a bulging portion by deformation of the sealing body caused by evaporation of the coolant in a region not overlapping the power storage element; a heat transfer plate that is stacked on the power storage element with the cooling member sandwiched therebetween; and an elastic member that abuts with the heat transfer plate and the bulging portion and is elastically deformable.

Abstract: A cooling member includes a sealing member including a first sheet member and a second sheet member connected to each other in a liquid-tightly closed state, a refrigerant enclosed in the sealing member, and an absorbing member disposed in the sealing member and configured to absorb the refrigerant.

Abstract: An enclosing member including a sheet member connected in a liquid tight manner, refrigerant enclosed in the enclosing member, and an absorbing member arranged in the enclosing member and absorbing the refrigerant. The enclosing member includes a condensation section where the refrigerant that is in a gaseous state is condensed, and in the condensation section, the absorbing member is attached on at least a lower section of an inner surface of the enclosing member with respect to a vertical direction.

Abstract: A cooling member includes an enclosing member including sheet members connected in a liquid tight manner and including small compartments, refrigerant enclosed in each of the small compartments, and an absorbing member arranged in each of the small compartments and absorbing the refrigerant. Each of the small compartments includes a condensation section where the refrigerant that is in a gaseous state is condensed.

Abstract: A conductive member includes an enclosure, a coolant, and a conductor. The enclosure includes a sheet and has liquid tightness. The coolant is enclosed in the enclosure. The conductor includes a cool section that is disposed in the enclosure and a projecting section that is liquid-tightly sealed with the sheet and projects from the enclosure.

Abstract: A power storage module includes power storage elements and cooling members that are in contact with the power storage elements to transfer heat. The cooling member includes an enclosing member, refrigerant, and an absorbing member absorbing the refrigerant, and the enclosing member includes a first sheet member and a second sheet member that are connected in a liquid tight manner, and the refrigerant and the absorbing member are arranged within the enclosing member. The cooling member is arranged to be inclined with respect to a horizontal plane such that a section thereof being in contact with the power storage element to transfer heat is on a lower level.

Abstract: An AlN sintered compact includes AlN crystal grains and a grain boundary phase, and the grain boundary phase is lower in Vickers hardness than the AlN crystal grains.

Abstract: A ceramic wiring substrate and method for manufacturing the same, the substrate having an up-and-down conduction body which is made by forming a porous structure body from a high melting point metal and then infiltrating a low-resistance metal in an up-and-down conduction hole subsequently formed in a substrate made in a plate shape through sintering a ceramic precursor, the conduction body having a normal composite structure without an abnormally grown particle, a void, a crack and the like and not having a problem of falling off from the substrate, as well as provided a semiconductor device using this substrate. An intermediate layer formed of at least one selected from a group of Mo, W, Co, Fe, Zr, Re, Os, Ta, Nb, Ir, Ru and Hf is formed on an inner surface of the up-and-down conduction hole of the substrate before being provided with the conduction body having the composite structure.

Abstract: A gear•rear shaft containing main body of a bottomed type is penetrated with a bearing hole and a rear face of the gear•rear shaft containing main body is coupled with a closing plate to form an airtight seal from an outside environment. Shafts extended from two gears to a side of the rear face are set to be shorter than a length of the bearing hole in an axis core direction. Bushes are also set to a length that is the same as that of the shafts. The gear•rear shaft containing main body is formed with a recess portion at the rear face and the bearing hole is penetrated to open to the recess portion. The gear•rear shaft containing main body is bored to penetrate with a low pressure port communicating with a low pressure region in an axis core direction.

Abstract: To provide a substrate material made of an aluminum/silicon carbide composite alloy which has a thermal conductivity of 100 W/m×K or higher and a thermal expansion coefficient of 20×10?6/° C. or lower and is lightweight and compositionally homogeneous. A substrate material made of an aluminum/silicon carbide composite ally which comprises Al—SiC alloy composition parts and non alloy composition part and dispersed therein from 10 to 70% by weight silicon carbide particles, and in which the fluctuations of silicon carbide concentration in the Al—SiC alloy composition parts therein are within 1% by weight. The substrate material is produced by sintering a compact of an aluminum/silicon carbide starting powder at a temperature not lower than 600° C. in a non-oxidizing atmosphere.

Abstract: A light-emitting diode (1) is furnished with a semiconductor laminate (6), optically reflective layers (17) and (19), an optically reflective film (25), and a phosphorescent plate (27). The laminate (6) is formed by an n-type cladding layer (9), an active layer (11), a p-type cladding layer (13), and a p-type contact layer (15), laminated in order onto a substrate (7). The optically reflective layers (17) and (19) are provided respectively on the p-type contact layer (15) and on the back side (7b) of the substrate (7). The optically reflective film (25) is provided on three side surfaces of the laminate (6). The phosphorescent plate (27) is mounted on a side face, among the side faces of the laminate (6), on which there is no optically reflective film (25). Blue light (L1) output from the active layer (11) is reflected at each of the optically reflective layers, and is gathered on the side face on which the phosphorescent plate (27) is provided.

Abstract: To provide a substrate material made of an aluminum/silicon carbide composite alloy which has a thermal conductivity of 100 W/m×K or higher and a thermal expansion coefficient of 20×10?6/° C. or lower and is lightweight and compositionally homogeneous. A substrate material made of an aluminum/silicon carbide composite ally which comprises Al—SiC alloy composition parts and non alloy composition part and dispersed therein from 10 to 70% by weight silicon carbide particles, and in which the fluctuations of silicon carbide concentration in the Al—SiC alloy composition parts therein are within 1% by weight. The substrate material is produced by sintering a compact of an aluminum/silicon carbide starting powder at a temperature not lower than 600° C. in a non-oxidizing atmosphere.

Abstract: It is an object to provide an aluminum nitride sintered body having a metallization layer, in which the bonding strength between the aluminum nitride and the metallization layer is high and there is no cracking within the metallization layer. In the first aspect, a metallization layer is formed on a sheet of aluminum nitride by either coating the sheet with a paste containing a tungsten powder with an average particle size of 2 to 5 ?m (used as a conductive high-melting point metal) or by making a through-hole in the sheet and filling this hole with this paste, and then sintering the whole thing at once. It is preferable here for no inorganic material powder other than tungsten to be admixed.

Abstract: A gear.rear shaft containing main body of a bottomed type is penetrated with a bearing hole and a rear face of the gear.rear shaft containing main body is coupled with a closing plate to seal in airtight from outside. Shafts extended from two gears to a side of the rear face are set to be more less shorter than a length of the bearing hole in an axis core direction. Bushes are also set to a length the same as that of the shafts. The gear.rear shaft containing main body is formed with a recess portion at the rear face and the bearing hole is penetrated to open to the recess portion. The gear.rear shaft containing main body is bored to penetrate with a low pressure port communicating with a low pressure region in an axis core direction.

Abstract: The heater module (30) for heating an optical waveguide device (2) is provided with a ceramics heater (40) having a heating circuit (42) adapted to generate heat when energized and an AlN ceramics layer (44) stacked on the heating circuit.

Abstract: To provide a heater module which can improve the temperature uniformity in an optical waveguide while keeping the power consumption and the thickness of the optical waveguide module. A heater module 20 in accordance with the present invention is a heater module 20 for heating an optical waveguide device 12 so as to regulate its temperature; and comprises a heat-generating circuit 22 adapted to generate heat when energized, and a heat-transmitting section 21 disposed on the upper face of the heat-generating circuit 22 and formed with a recessed groove portion for mounting the optical waveguide device 12. When the optical waveguide device 12 is mounted on the bottom face of the heat-transmitting section 21 formed with the recessed groove section, the optical waveguide device 12 can be heated not only from its bottom face, but also from its side faces by edge parts constituting the recessed groove portion, whereby the temperature uniformity can be enhanced.

Abstract: To provide a substrate material made of an aluminum/silicon carbide composite alloy which has a thermal conductivity of 100 W/m×K or higher and a thermal expansion coefficient of 20×10−6/° C. or lower and is lightweight and compositionally homogeneous. A substrate material made of an aluminum/silicon carbide composite ally which comprises Al—SiC alloy composition parts and non alloy composition part and dispersed therein from 10 to 70% by weight silicon carbide particles, and in which the fluctuations of silicon carbide concentration in the Al—SiC alloy composition parts therein are within 1% by weight. The substrate material is produced by sintering a compact of an aluminum/silicon carbide starting powder at a temperature not lower than 600° C. in a non-oxidizing atmosphere.

Abstract: To provide a heater module which can improve the temperature uniformity in an optical waveguide while keeping the power consumption and the thickness of the optical waveguide module.

Abstract: To provide a substrate material made of an aluminum/silicon carbide composite alloy which has a thermal conductivity of 100 W/m×K or higher and a thermal expansion coefficient of 20×10−6/° C. or lower and is lightweight and compositionally homogeneous. A substrate material made of an aluminum/silicon carbide composite ally which comprises Al—SiC alloy composition parts and non alloy composition part and dispersed therein from 10 to 70% by weight silicon carbide particles, and in which the fluctuations of silicon carbide concentration in the Al—SiC alloy composition parts therein are within 1% by weight. The substrate material is produced by sintering a compact of an aluminum/silicon carbide starting powder at a temperature not lower than 600° C. in a non-oxidizing atmosphere.