Abstract: A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Abstract: A process for producing a silicon compound can minimize the number of steps and can form a desired compound in a low-temperature environment. The process comprises: allowing a radical of a halogen gas to act on a member 11 to be etched, which is disposed within a chamber 1 and is formed of a material containing an element capable of forming a compound with Si, while keeping the member 11 at a relatively high temperature, to form a gas of a precursor 24, which is a compound of the material and the halogen; holding a substrate 3 accommodated within the chamber 1 at a relatively low temperature, with the Si interface of the substrate 3 being exposed, to adsorb the precursor 24 onto the Si interface of the substrate 3; and then allowing the radical of the halogen gas to act on the precursor 24 adsorbed onto the Si interface to reduce the precursor 24, thereby producing a compound of the material and Si.

Abstract: A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

Abstract: A metal film production method supplies a source gas containing a halogen, such as a chlorine, to the interior of a chamber such that the source gas is intermittently supplied, to form a Cu component of a precursor into a film on a substrate, while suppressing a relative increase in etching particles. Thus, the source gas is supplied in the full presence of plasma particles contributing to film formation. Moreover, the source gas is supplied in a state in which a Cu film formed is not etched with the etching particles. Consequently, the Cu film is reliably increased with respect to the film formation time to increase the film formation speed. The temperature of the substrate is less than that of the etched member.

Abstract: A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Abstract: A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor absorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Abstract: A metal film production apparatus supplies a source gas containing a halogen such as a chlorine, to the interior of a chamber such that the source gas is intermittently supplied, to form a Cu component of a precursor into a film on a substrate, while suppressing a relative increase in etching particles. Thus, the source gas is supplied in the full presence of plasma particles contributing a film formation. Moreover, the source gas is supplied in a state in which a Cu film formed is not etched with the etching particles. Consequently, the Cu film is reliably increased with respect to the film formation time to increase the film formation speed. The temperature of the substrate is less than that of the etched member. Alternatively, a source gas is supplied to the interior of a chamber between a substrate and a copper plate member such that the source gas is gradually increased continuously from a flow rate of 0 to a predetermined flow rate to increase the particle size of the metal component, as copper.

Abstract: A process for producing a silicon compound can minimize the number of steps and can form a desired compound in a low-temperature environment. The process comprises: allowing a radical of a halogen gas to act on a member 11 to be etched, which is disposed within a chamber 1 and is formed of a material containing an element capable of forming a compound with Si, while keeping the member 11 at a relatively high temperature, to form a gas of a precursor 24, which is a compound of the material and the halogen; holding a substrate 3 accommodated within the chamber 1 at a relatively low temperature, with the Si interface of the substrate 3 being exposed, to adsorb the precursor 24 onto the Si interface of the substrate 3; and then allowing the radical of the halogen gas to act on the precursor 24 adsorbed onto the Si interface to reduce the precursor 24, thereby producing a compound of the material and Si.

Abstract: A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Abstract: A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

Abstract: A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Abstract: A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

Abstract: A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

Abstract: A metal film production apparatus and method supply a source gas containing chlorine, as a halogen, to the interior of a chamber such that the source gas is intermittently supplied, to form a Cu component of a precursor into a film on a substrate, while suppressing a relative increase in etching particles. Thus, the source gas is supplied in the full presence of plasma particles contributing to film formation. Moreover, the source gas is supplied in a state in which a Cu film formed is not etched with the etching particles. Consequently, the Cu film is reliably increased with respect to the film formation time to increase the film formation speed.