Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Abstract: A low-alloy heat-resistant steel may be used to manufacturing a large element which has uniform superior high temperature properties through a surface layer to a center part. The low-alloy heat-resistant steel comprises carbon in an amount of 0.20 to 0.35% by weight, silicon in an amount of 0.005 to 0.35% by weight, manganese in an amount of 0.05 to 1.0% by weight, nickel in an amount of 0.05 to 0.3% by weight, chromium in an amount of 0.8 to 2.5% by weight, molybdenum in an amount of 0.1 to 1.5% by weight, tungsten in an amount of 0.1 to 2.5% by weight, vanadium in an amount of 0.05 to 0.3% by weight, phosphorus in an amount not greater than 0.012% by weight, sulfur in an amount not greater than 0.005% by weight, copper in an amount not greater than 0.10% by weight, aluminum in an amount not greater than 0.01% by weight, arsenic in an amount not greater than 0.01% by weight, tin in an amount not greater than 0.01% by weight, antimony in an amount not greater than 0.

Abstract: In a metal film production apparatus, a copper plate member is etched with a Cl2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl2 gas, and the Cl* is supplied into the chamber to withdraw a Cl2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Abstract: A metal film production apparatus and method supply a source gas containing chlorine, as a halogen, to the interior of a chamber such that the source gas is intermittently supplied, to form a Cu component of a precursor into a film on a substrate, while suppressing a relative increase in etching particles. Thus, the source gas is supplied in the full presence of plasma particles contributing to film formation. Moreover, the source gas is supplied in a state in which a Cu film formed is not etched with the etching particles. Consequently, the Cu film is reliably increased with respect to the film formation time to increase the film formation speed.

Abstract: A Cl2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

Abstract: A low-alloy heat-resistant steel may be used to manufacturing a large element which has uniform superior high temperature properties through a surface layer to a center part. The low-alloy heat-resistant steel comprises carbon in an amount of 0.20 to 0.35% by weight, silicon in an amount of 0.005 to 0.35% by weight, manganese in an amount of 0.05 to 1.0% by weight, nickel in an amount of 0.05 to 0.3% by weight, chromium in an amount of 0.8 to 2.5% by weight, molybdenum in an amount of 0.1 to 1.5% by weight, tungsten in an amount of 0.1 to 2.5% by weight, vanadium in an amount of 0.05 to 0.3% by weight, phosphorus in an amount not greater than 0.012% by weight, sulfur in an amount not greater than 0.005% by weight, copper in an amount not greater than 0.10% by weight, aluminum in an amount not greater than 0.01% by weight, arsenic in an amount not greater than 0.01% by weight, tin in an amount not greater than 0.01% by weight, antimony in an amount not greater than 0.