Abstract: An inverter unit at an end portion of a motor in a rotation shaft direction, the motor includes a conductive member electrically connected to the inverter unit, the inverter unit includes a control component connected to the conductive member and configured to control driving of the motor, the conductive member extends from the end portion of the motor along a rotation shaft of the motor in a state of being adjacent to the rotation shaft, and the control component is disposed on a radially outer side of the conductive member.

Abstract: A silicon carbide semiconductor device including a semiconductor substrate containing silicon carbide, a contact electrode, which is a silicide layer containing nickel, provided on a surface of the semiconductor substrate and forming an ohmic contact with the semiconductor substrate, and a metal connection layer provided on a surface of the contact electrode. The metal connection layer has a stacked structure in which on the surface of the contact electrode, a titanium layer, a nickel layer, and a gold layer are sequentially stacked. The titanium layer includes a carbon diffusion layer formed along an interface between the titanium layer and the contact electrode, a concentration of carbon being higher in the carbon diffusion layer than in a portion of the titanium layer other than the carbon diffusion layer. The titanium layer, the nickel layer and the gold layer have thicknesses of 100 nm to 300 nm, 1000 nm to 1500 nm, and 20 nm to 200 nm, respectively.

Abstract: A MOS-gate silicon carbide semiconductor device has an interlayer insulating film that covers a gate electrode and that has a 2-layer structure in which a NSG film and a BPSG film are sequentially stacked. The BPSG film has a boron concentration in a range from 4.5 mol % to 8.0 mol %. The BPSG film has a phosphorus concentration in a range from 1.0 mol % to 3.5 mol %. The NSG film has a thickness in a range from 50 nm to 400 nm. The BPSG film has a thickness in a range from 400 nm to 800 nm. A distance from the gate insulating film to the BPSG film is at most 100 nm at a portion where the gate insulating film and the BPSG film oppose each other across the NSG film.

Abstract: A semiconductor device includes a first barrier film covering the main surface of the active region and the insulating film layer, the first barrier film having an ohmic contact hole that exposes a contact portion of the ohmic contact formation region within the window of the insulating film layer; a base contact layer filled into the ohmic contact hole and making ohmic contact with the contact portion of the ohmic contact formation region; a second barrier film made of titanium, covering the base contact layer and the first barrier film; and a third barrier film made of titanium oxide and titanium nitride, covering a surface of the second barrier film.

Abstract: A silicon carbide semiconductor device including a semiconductor substrate containing silicon carbide, a contact electrode, which is a silicide layer containing nickel, provided on a surface of the semiconductor substrate and forming an ohmic contact with the semiconductor substrate, and a metal connection layer provided on a surface of the contact electrode. The metal connection layer has a stacked structure in which on the surface of the contact electrode, a titanium layer, a nickel layer, and a gold layer are sequentially stacked. The titanium layer includes a carbon diffusion layer formed along an interface between the titanium layer and the contact electrode, a concentration of carbon being higher in the carbon diffusion layer than in a portion of the titanium layer other than the carbon diffusion layer. The titanium layer, the nickel layer and the gold layer have thicknesses of 100 nm to 300 nm, 1000 nm to 1500 nm, and 20 nm to 200 nm, respectively.

Abstract: A MOS-gate silicon carbide semiconductor device has an interlayer insulating film that covers a gate electrode and that has a 2-layer structure in which a NSG film and a BPSG film are sequentially stacked. The BPSG film has a boron concentration in a range from 4.5 mol % to 8.0 mol %. The BPSG film has a phosphorus concentration in a range from 1.0 mol % to 3.5 mol %. The NSG film has a thickness in a range from 50 nm to 400 nm. The BPSG film has a thickness in a range from 400 nm to 800 nm. A distance from the gate insulating film to the BPSG film is at most 100 nm at a portion where the gate insulating film and the BPSG film oppose each other across the NSG film.

Abstract: An outdoor unit includes a heat exchanger, a blower fan, an electronic board on which a heat-generating element is mounted, a housing, and a heatsink. The housing includes a partition plate partitioning the inside of the housing into a heat exchanger chamber in which the heat exchanger and the blower fan are placed and a machine chamber in which the electronic board and a compressor are placed, and a portion of the partition plate has an opening. The heatsink includes a main plate placed to cover the opening from the heat-exchanger-room-side of the partition plate and heat-releasing fins projecting from the main plate to the blower fan side, and a portion of the main plate comes into contact with the heat-generating element via the opening. The greater the amounts of heat transferred from the heat-generating element the heat-releasing fins, the larger the heat-releasing fins.

Abstract: A silicon carbide semiconductor device includes: a drift region of a first conductivity type; a base region of a second conductivity type disposed on the drift region; a main electrode contact region of the first conductivity type selectively embedded in a top of the base region at a higher impurity density than the drift region; a trench having a round part on a top surface side of the main electrode contact region to a level that is shallower than a depth of the main electrode contact region, the trench going from the round part through the base region and having a bottom that reaches the drift region; and an insulated gate structure provided on an inner side of the trench. A smallest radius of curvature of the round part is greater than a relatively high impurity region of the main electrode contact region.

Abstract: A semiconductor device includes a first barrier film covering the main surface of the active region and the insulating film layer, the first barrier film having an ohmic contact hole that exposes a contact portion of the ohmic contact formation region within the window of the insulating film layer; a base contact layer filled into the ohmic contact hole and making ohmic contact with the contact portion of the ohmic contact formation region; a second barrier film made of titanium, covering the base contact layer and the first barrier film; and a third barrier film made of titanium oxide and titanium nitride, covering a surface of the second barrier film.

Abstract: A silicon carbide semiconductor device, including a silicon carbide semiconductor structure, an insulated gate structure including a gate insulating film contacting the silicon carbide semiconductor structure and a gate electrode formed on the gate insulating film, an interlayer insulating film covering the insulated gate structure, a metal layer provided on the interlayer insulating film for absorbing or blocking hydrogen, and a main electrode provided on the metal layer and electrically connected to the silicon carbide semiconductor structure.

Abstract: A semiconductor device includes on an n-type semiconductor substrate of silicon carbide, an n-type semiconductor layer, a p-type base region, an n-type source region, a p-type contact region, a gate insulating film, a gate electrode, and a source electrode. The semiconductor device has a drain electrode on a back surface of the semiconductor substrate. On a surface of the gate electrode, an interlayer insulating film is disposed. The interlayer insulating film has plural layers among which, one layer is formed by a silicon nitride film. With such a structure, degradation of semiconductor device properties are suppressed. Further, increases in the number of processes at the time of manufacturing are suppressed.

Abstract: A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate; a nickel silicide film provided on a surface of the silicon carbide semiconductor substrate and functioning as an ohmic contact; and an extraction electrode contacting the ohmic contact on a side different from a silicon carbide semiconductor substrate side. The silicon carbide semiconductor substrate side of the ohmic contact is mainly formed from a NiSi phase and an extraction electrode side thereof is mainly formed from a Ni2Si phase. The ohmic contact includes carbon on the silicon carbide semiconductor substrate and includes no carbon on the extraction electrode side.

Abstract: An infrared ray absorbing film is selectively formed on a surface of a silicon carbide semiconductor substrate in a predetermined area. The infrared ray absorbing film is composed of one of a multi-layered film of titanium nitride and titanium, a multi-layered film of molybdenum nitride and molybdenum, a multi-layered film of tungsten nitride and tungsten, or a multi-layered film of chromium nitride and chromium. An aluminum film and a nickel film are sequentially formed in this order on the silicon carbide semiconductor substrate in an area excluding the predetermined area in which the infrared ray absorbing film is formed. The silicon carbide semiconductor substrate is thereafter heated using a rapid annealing process with a predetermined heating rate to form an electrode. The rapid annealing process converts the nickel film into a silicide and, with the aluminum film, provides an electrode having ohmic contact.

Abstract: Heat treatment is performed twice with respect to a silicon carbide substrate. In the first heat treatment process, after Si ions are implanted in a front surface of the silicon carbide substrate, the silicon carbide substrate contacting an electrode film is heat treated, and a precursor layer of a thermal reaction layer is formed between the electrode film and the silicon carbide substrate that includes a high-concentration impurity region. Thereafter, the unreacted electrode film remaining on the precursor layer of the thermal reaction layer and on an oxide film is removed. In the subsequent second heat treatment process, the silicon carbide substrate from which the unreacted electrode film has been removed is heat treated and the precursor layer of the thermal reaction layer at a bottom area of the opening is converted into the thermal reaction layer.

Abstract: A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate; a nickel silicide film provided on a surface of the silicon carbide semiconductor substrate and functioning as an ohmic contact; and an extraction electrode contacting the ohmic contact on a side different from a silicon carbide semiconductor substrate side. The silicon carbide semiconductor substrate side of the ohmic contact is mainly formed from a NiSi phase and an extraction electrode side thereof is mainly formed from a Ni2Si phase. The ohmic contact includes carbon on the silicon carbide semiconductor substrate and includes no carbon on the extraction electrode side.

Abstract: Heat treatment is performed twice with respect to a silicon carbide substrate. In the first heat treatment process, after Si ions are implanted in a front surface of the silicon carbide substrate, the silicon carbide substrate contacting an electrode film is heat treated, and a precursor layer of a thermal reaction layer is formed between the electrode film and the silicon carbide substrate that includes a high-concentration impurity region. Thereafter, the unreacted electrode film remaining on the precursor layer of the thermal reaction layer and on an oxide film is removed. In the subsequent second heat treatment process, the silicon carbide substrate from which the unreacted electrode film has been removed is heat treated and the precursor layer of the thermal reaction layer at a bottom area of the opening is converted into the thermal reaction layer.

Abstract: An ion implantation mask, which is an inorganic insulating film, is formed on a silicon carbide substrate. A mask portion and two regions of an opened ion implantation portion are formed in the ion implantation mask by dry etching. At that time, a residual portion which is thinner than the mask portion is formed in the bottom of the opened ion implantation portion. Then, ions are implanted through the ion implantation mask to form a predetermined semiconductor region in the silicon carbide substrate. According to this structure, it is possible to prevent an increase in the roughness of the surface of the silicon carbide substrate and to improve breakdown voltage.

Abstract: A silicon carbide semiconductor device, including a silicon carbide semiconductor structure, an insulated gate structure including a gate insulating film contacting the silicon carbide semiconductor structure and a gate electrode formed on the gate insulating film, an interlayer insulating film covering the insulated gate structure, a metal layer provided on the interlayer insulating film for absorbing or blocking hydrogen, and a main electrode provided on the metal layer and electrically connected to the silicon carbide semiconductor structure.

Abstract: A semiconductor device includes on an n-type semiconductor substrate of silicon carbide, an n-type semiconductor layer, a p-type base region, an n-type source region, a p-type contact region, a gate insulating film, a gate electrode, and a source electrode. The semiconductor device has a drain electrode on a back surface of the semiconductor substrate. On a surface of the gate electrode, an interlayer insulating film is disposed. The interlayer insulating film has plural layers among which, one layer is formed by a silicon nitride film. With such a structure, degradation of semiconductor device properties are suppressed. Further, increases in the number of processes at the time of manufacturing are suppressed.

Abstract: An infrared ray absorbing film is selectively formed on a surface of a silicon carbide semiconductor substrate in a predetermined area. An aluminum film and a nickel film are sequentially formed in this order on the silicon carbide semiconductor substrate in an area excluding the predetermined area in which the infrared ray absorbing film is formed. The silicon carbide semiconductor substrate is thereafter heated using a rapid annealing process with a predetermined heating rate to form an electrode. The rapid annealing process converts the nickel film into a silicide and, with the aluminum film, provides an electrode having ohmic contact.