Patents by Inventor Yoshiyuki Sakai

Yoshiyuki Sakai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210011430
    Abstract: A quantum simulator includes a pseudo speckle pattern generator, a main vacuum chamber, an atomic gas supply unit, a light beam generator, a photodetector, and an atom number detector. The pseudo speckle pattern generator generates a pseudo speckle pattern in the inside of the main vacuum chamber by light allowed to enter the inside of the main vacuum chamber through the second window. The pseudo speckle pattern generator includes a controller, a light source, a beam expander, a spatial light modulator, and a lens. The controller sets a modulation distribution of the spatial light modulator based on a two-dimensional pseudo random number pattern.
    Type: Application
    Filed: September 23, 2020
    Publication date: January 14, 2021
    Applicants: HAMAMATSU PHOTONICS K.K., INTER-UNIVERSITY RESEARCH INSTITUTE CORPORATION NATIONAL INSTITUTES OF NATURAL SCIENCES
    Inventors: Hiroto Sakai, Kenji Ohmori, Taro Ando, Nobuyuki Takei, Haruyoshi Toyoda, Yoshiyuki Ohtake, Tomoko Hyodo, Yuu Takiguchi
  • Patent number: 10886398
    Abstract: A MOS-gate silicon carbide semiconductor device has an interlayer insulating film that covers a gate electrode and that has a 2-layer structure in which a NSG film and a BPSG film are sequentially stacked. The BPSG film has a boron concentration in a range from 4.5 mol % to 8.0 mol %. The BPSG film has a phosphorus concentration in a range from 1.0 mol % to 3.5 mol %. The NSG film has a thickness in a range from 50 nm to 400 nm. The BPSG film has a thickness in a range from 400 nm to 800 nm. A distance from the gate insulating film to the BPSG film is at most 100 nm at a portion where the gate insulating film and the BPSG film oppose each other across the NSG film.
    Type: Grant
    Filed: April 15, 2019
    Date of Patent: January 5, 2021
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Makoto Utsumi, Yoshiyuki Sakai
  • Patent number: 10824114
    Abstract: A quantum simulator includes a pseudo speckle pattern generator, a main vacuum chamber, an atomic gas supply unit, a light beam generator, a photodetector, and an atom number detector. The pseudo speckle pattern generator generates a pseudo speckle pattern in the inside of the main vacuum chamber by light allowed to enter the inside of the main vacuum chamber through the second window. The pseudo speckle pattern generator includes a controller, a light source, a beam expander, a spatial light modulator, and a lens. The controller sets a modulation distribution of the spatial light modultor based on a two-dimensional pseudo random number pattern.
    Type: Grant
    Filed: April 4, 2018
    Date of Patent: November 3, 2020
    Assignees: HAMAMATSU PHOTONICS K.K., INTER-UNIVERSITY RESEARCH INSTITUTE CORPORATION NATIONAL SCIENCES
    Inventors: Hiroto Sakai, Kenji Ohmori, Taro Ando, Nobuyuki Takei, Haruyoshi Toyoda, Yoshiyuki Ohtake, Tomoko Hyodo, Yuu Takiguchi
  • Patent number: 10790373
    Abstract: A semiconductor device includes a first barrier film covering the main surface of the active region and the insulating film layer, the first barrier film having an ohmic contact hole that exposes a contact portion of the ohmic contact formation region within the window of the insulating film layer; a base contact layer filled into the ohmic contact hole and making ohmic contact with the contact portion of the ohmic contact formation region; a second barrier film made of titanium, covering the base contact layer and the first barrier film; and a third barrier film made of titanium oxide and titanium nitride, covering a surface of the second barrier film.
    Type: Grant
    Filed: September 6, 2018
    Date of Patent: September 29, 2020
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Makoto Utsumi, Yoshiyuki Sakai
  • Publication number: 20200152594
    Abstract: A silicon carbide semiconductor device including a semiconductor substrate containing silicon carbide, a contact electrode, which is a silicide layer containing nickel, provided on a surface of the semiconductor substrate and forming an ohmic contact with the semiconductor substrate, and a metal connection layer provided on a surface of the contact electrode. The metal connection layer has a stacked structure in which on the surface of the contact electrode, a titanium layer, a nickel layer, and a gold layer are sequentially stacked. The titanium layer includes a carbon diffusion layer formed along an interface between the titanium layer and the contact electrode, a concentration of carbon being higher in the carbon diffusion layer than in a portion of the titanium layer other than the carbon diffusion layer. The titanium layer, the nickel layer and the gold layer have thicknesses of 100 nm to 300 nm, 1000 nm to 1500 nm, and 20 nm to 200 nm, respectively.
    Type: Application
    Filed: September 27, 2019
    Publication date: May 14, 2020
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventors: Makoto UTSUMI, Yoshiyuki SAKAI
  • Publication number: 20200117018
    Abstract: A pseudo speckle pattern generation apparatus includes a first spatial light modulator, a first lens, a second spatial light modulator, a second lens and the like. The first spatial light modulator has a first intensity modulation distribution based on a pseudo random number pattern, and spatially modulates intensity of light output from a light source and increased in beam diameter by a beam expander. The second spatial light modulator has a second intensity modulation distribution based on a filter function, is provided on a plane where a Fourier transformed pattern is generated by the first lens, and spatially modulates intensity of the light reached through the first lens. The second lens optically Fourier transforms a pattern of the light output from the second spatial light modulator to generate a Fourier transformed pattern as a pseudo speckle pattern.
    Type: Application
    Filed: March 26, 2018
    Publication date: April 16, 2020
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Hiroto SAKAI, Taro ANDO, Haruyoshi TOYODA, Yoshiyuki OHTAKE, Yuu TAKIGUCHI, Tomoko HYODO
  • Publication number: 20200041810
    Abstract: A pseudo speckle pattern generation apparatus includes a light source, a beam expander, and a spatial light modulator. The spatial light modulator has an intensity modulation distribution based on a pseudo speckle pattern calculated from a pseudo random number pattern and a correlation function, receives light output from the light source and increased in beam diameter by the beam expander, spatially modulates the received light according to the modulation distribution, and outputs modulated light.
    Type: Application
    Filed: March 26, 2018
    Publication date: February 6, 2020
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Hiroto SAKAI, Taro ANDO, Haruyoshi TOYODA, Yoshiyuki OHTAKE, Yuu TAKIGUCHI, Tomoko HYODO
  • Publication number: 20190378921
    Abstract: A MOS-gate silicon carbide semiconductor device has an interlayer insulating film that covers a gate electrode and that has a 2-layer structure in which a NSG film and a BPSG film are sequentially stacked. The BPSG film has a boron concentration in a range from 4.5 mol % to 8.0 mol %. The BPSG film has a phosphorus concentration in a range from 1.0 mol % to 3.5 mol %. The NSG film has a thickness in a range from 50 nm to 400 nm. The BPSG film has a thickness in a range from 400 nm to 800 nm. A distance from the gate insulating film to the BPSG film is at most 100 nm at a portion where the gate insulating film and the BPSG film oppose each other across the NSG film.
    Type: Application
    Filed: April 15, 2019
    Publication date: December 12, 2019
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventors: Makoto UTSUMI, Yoshiyuki SAKAI
  • Patent number: 10432027
    Abstract: A movable portion transmission system includes a transmitter and receiver having a transmission antenna to perform wireless transmission of electric power supplied thereto and a reception antenna to receive the electric power from the transmission antenna, a transmission power supply circuit to establish a resonance condition of the transmission antenna, and a reception power supply circuit to establish a resonance condition of the reception antenna. The transmission antenna includes a transmission side coil in a spiral shape which is arranged while being centered at the axial center of a rotary member, and the reception antenna includes a reception side coil in a spiral shape which is arranged with a gap therefrom to the transmission side coil while being centered at the axial center of the rotary member.
    Type: Grant
    Filed: May 13, 2014
    Date of Patent: October 1, 2019
    Assignee: MITSUBISHI ELECTRIC ENGINEERING COMPANY, LIMITED
    Inventors: Yoshiyuki Akuzawa, Kiyohide Sakai, Toshihiro Ezoe, Yuki Ito
  • Publication number: 20190226690
    Abstract: An outdoor unit includes a heat exchanger, a blower fan, an electronic board on which a heat-generating element is mounted, a housing, and a heatsink. The housing includes a partition plate partitioning the inside of the housing into a heat exchanger chamber in which the heat exchanger and the blower fan are placed and a machine chamber in which the electronic board and a compressor are placed, and a portion of the partition plate has an opening. The heatsink includes a main plate placed to cover the opening from the heat-exchanger-room-side of the partition plate and heat-releasing fins projecting from the main plate to the blower fan side, and a portion of the main plate comes into contact with the heat-generating element via the opening. The greater the amounts of heat transferred from the heat-generating element the heat-releasing fins, the larger the heat-releasing fins.
    Type: Application
    Filed: September 26, 2017
    Publication date: July 25, 2019
    Applicant: Mitsubishi Electric Corporation
    Inventors: Naoki TORII, Yohei Kato, Yoshiyuki SAKAI, Katsuyuki YAMAMOTO
  • Patent number: 10355381
    Abstract: A board connector (10) includes a housing (20), fixing members (50) and a shield member (70). The housing (20) holds a terminal fitting (40). The fixing member (50) includes a housing fixing portion (51) to be fixed to the housing (20) and a board fixing portion (52) to be fixed to a circuit board (90) while being electrically connected to the circuit board (90). The shield member (70) includes mounting portions (75) to be mounted on the housing (75) and covering portions (77) for covering outer side surfaces of the fixing members (50) in a mounting direction of the mounting portions (75), and the covering portions (77) include contact portions (81) configured to come into contact with the outer side surfaces of the fixing members (50).
    Type: Grant
    Filed: April 18, 2017
    Date of Patent: July 16, 2019
    Assignee: Sumitomo Wiring Systems, Ltd.
    Inventors: Yoshiyuki Ishikawa, Yasuaki Nakayama, Kenji Makino, Masami Sakai
  • Publication number: 20190140092
    Abstract: A silicon carbide semiconductor device includes: a drift region of a first conductivity type; a base region of a second conductivity type disposed on the drift region; a main electrode contact region of the first conductivity type selectively embedded in a top of the base region at a higher impurity density than the drift region; a trench having a round part on a top surface side of the main electrode contact region to a level that is shallower than a depth of the main electrode contact region, the trench going from the round part through the base region and having a bottom that reaches the drift region; and an insulated gate structure provided on an inner side of the trench. A smallest radius of curvature of the round part is greater than a relatively high impurity region of the main electrode contact region.
    Type: Application
    Filed: October 9, 2018
    Publication date: May 9, 2019
    Applicant: Fuji Electric Co., Ltd.
    Inventors: Makoto UTSUMI, Yoshiyuki SAKAI
  • Publication number: 20190115439
    Abstract: A semiconductor device includes a first barrier film covering the main surface of the active region and the insulating film layer, the first barrier film having an ohmic contact hole that exposes a contact portion of the ohmic contact formation region within the window of the insulating film layer; a base contact layer filled into the ohmic contact hole and making ohmic contact with the contact portion of the ohmic contact formation region; a second barrier film made of titanium, covering the base contact layer and the first barrier film; and a third barrier film made of titanium oxide and titanium nitride, covering a surface of the second barrier film.
    Type: Application
    Filed: September 6, 2018
    Publication date: April 18, 2019
    Applicant: Fuji Electric Co., Ltd.
    Inventors: Makoto UTSUMI, Yoshiyuki SAKAI
  • Patent number: 10096680
    Abstract: A silicon carbide semiconductor device, including a silicon carbide semiconductor structure, an insulated gate structure including a gate insulating film contacting the silicon carbide semiconductor structure and a gate electrode formed on the gate insulating film, an interlayer insulating film covering the insulated gate structure, a metal layer provided on the interlayer insulating film for absorbing or blocking hydrogen, and a main electrode provided on the metal layer and electrically connected to the silicon carbide semiconductor structure.
    Type: Grant
    Filed: March 24, 2017
    Date of Patent: October 9, 2018
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Naoki Kumagai, Takashi Tsutsumi, Yoshiyuki Sakai, Yasuhiko Oonishi, Takumi Fujimoto, Kenji Fukuda, Shinsuke Harada, Mitsuo Okamoto
  • Patent number: 10079298
    Abstract: A semiconductor device includes on an n-type semiconductor substrate of silicon carbide, an n-type semiconductor layer, a p-type base region, an n-type source region, a p-type contact region, a gate insulating film, a gate electrode, and a source electrode. The semiconductor device has a drain electrode on a back surface of the semiconductor substrate. On a surface of the gate electrode, an interlayer insulating film is disposed. The interlayer insulating film has plural layers among which, one layer is formed by a silicon nitride film. With such a structure, degradation of semiconductor device properties are suppressed. Further, increases in the number of processes at the time of manufacturing are suppressed.
    Type: Grant
    Filed: July 1, 2016
    Date of Patent: September 18, 2018
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Akimasa Kinoshita, Yasuyuki Hoshi, Yuichi Harada, Yoshiyuki Sakai, Masanobu Iwaya, Mina Ryo
  • Patent number: 9978598
    Abstract: A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate; a nickel silicide film provided on a surface of the silicon carbide semiconductor substrate and functioning as an ohmic contact; and an extraction electrode contacting the ohmic contact on a side different from a silicon carbide semiconductor substrate side. The silicon carbide semiconductor substrate side of the ohmic contact is mainly formed from a NiSi phase and an extraction electrode side thereof is mainly formed from a Ni2Si phase. The ohmic contact includes carbon on the silicon carbide semiconductor substrate and includes no carbon on the extraction electrode side.
    Type: Grant
    Filed: January 27, 2017
    Date of Patent: May 22, 2018
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Makoto Utsumi, Yoshiyuki Sakai
  • Patent number: 9923062
    Abstract: An infrared ray absorbing film is selectively formed on a surface of a silicon carbide semiconductor substrate in a predetermined area. The infrared ray absorbing film is composed of one of a multi-layered film of titanium nitride and titanium, a multi-layered film of molybdenum nitride and molybdenum, a multi-layered film of tungsten nitride and tungsten, or a multi-layered film of chromium nitride and chromium. An aluminum film and a nickel film are sequentially formed in this order on the silicon carbide semiconductor substrate in an area excluding the predetermined area in which the infrared ray absorbing film is formed. The silicon carbide semiconductor substrate is thereafter heated using a rapid annealing process with a predetermined heating rate to form an electrode. The rapid annealing process converts the nickel film into a silicide and, with the aluminum film, provides an electrode having ohmic contact.
    Type: Grant
    Filed: March 1, 2016
    Date of Patent: March 20, 2018
    Assignees: FUJI ELECTRIC CO., LTD., NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
    Inventors: Makoto Utsumi, Yoshiyuki Sakai, Kenji Fukuda, Shinsuke Harada, Mitsuo Okamoto
  • Patent number: 9893162
    Abstract: Heat treatment is performed twice with respect to a silicon carbide substrate. In the first heat treatment process, after Si ions are implanted in a front surface of the silicon carbide substrate, the silicon carbide substrate contacting an electrode film is heat treated, and a precursor layer of a thermal reaction layer is formed between the electrode film and the silicon carbide substrate that includes a high-concentration impurity region. Thereafter, the unreacted electrode film remaining on the precursor layer of the thermal reaction layer and on an oxide film is removed. In the subsequent second heat treatment process, the silicon carbide substrate from which the unreacted electrode film has been removed is heat treated and the precursor layer of the thermal reaction layer at a bottom area of the opening is converted into the thermal reaction layer.
    Type: Grant
    Filed: February 21, 2017
    Date of Patent: February 13, 2018
    Assignee: FUJI ELECTRIC CO., LTD.
    Inventors: Naoyuki Ohse, Takumi Fujimoto, Yoshiyuki Sakai
  • Publication number: 20170271157
    Abstract: A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate; a nickel silicide film provided on a surface of the silicon carbide semiconductor substrate and functioning as an ohmic contact; and an extraction electrode contacting the ohmic contact on a side different from a silicon carbide semiconductor substrate side. The silicon carbide semiconductor substrate side of the ohmic contact is mainly formed from a NiSi phase and an extraction electrode side thereof is mainly formed from a Ni2Si phase. The ohmic contact includes carbon on the silicon carbide semiconductor substrate and includes no carbon on the extraction electrode side.
    Type: Application
    Filed: January 27, 2017
    Publication date: September 21, 2017
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventors: Makoto UTSUMI, Yoshiyuki SAKAI
  • Publication number: 20170271472
    Abstract: Heat treatment is performed twice with respect to a silicon carbide substrate. In the first heat treatment process, after Si ions are implanted in a front surface of the silicon carbide substrate, the silicon carbide substrate contacting an electrode film is heat treated, and a precursor layer of a thermal reaction layer is formed between the electrode film and the silicon carbide substrate that includes a high-concentration impurity region. Thereafter, the unreacted electrode film remaining on the precursor layer of the thermal reaction layer and on an oxide film is removed. In the subsequent second heat treatment process, the silicon carbide substrate from which the unreacted electrode film has been removed is heat treated and the precursor layer of the thermal reaction layer at a bottom area of the opening is converted into the thermal reaction layer.
    Type: Application
    Filed: February 21, 2017
    Publication date: September 21, 2017
    Applicant: FUJI ELECTRIC CO., LTD.
    Inventors: Naoyuki OHSE, Takumi FUJIMOTO, Yoshiyuki SAKAI