Abstract: An aqueous inkjet ink composition comprising a pigment, a pigment-dispersing resin, resin fine particles (A), water, and hydrophilic solvents (B), the resin fine particles (A) being formed by emulsion polymerizing ethylenically unsaturated monomers including: 20% to 80% by weight of an aromatic ethylenically unsaturated monomer (C) that does not have an ionic functional group; 0.6% to 6% by weight of water-soluble ethylenically unsaturated monomers (F) consisting of 0.5% to 3% by weight of a sulfonic acid group-containing ethylenically unsaturated monomer (D) and 0.1% to 3% by weight of a nonionic water-soluble ethylenically unsaturated monomer (E); and 0.1% to 10% by weight of a crosslinkable ethylenically unsaturated monomer (G), and the hydrophilic solvents (B) including a glycol-based solvent (H) and an ethylene glycol ether-based solvent (I) is provided.

Abstract: An ion implantation mask, which is an inorganic insulating film, is formed on a silicon carbide substrate. A mask portion and two regions of an opened ion implantation portion are formed in the ion implantation mask by dry etching. At that time, a residual portion which is thinner than the mask portion is formed in the bottom of the opened ion implantation portion. Then, ions are implanted through the ion implantation mask to form a predetermined semiconductor region in the silicon carbide substrate. According to this structure, it is possible to prevent an increase in the roughness of the surface of the silicon carbide substrate and to improve breakdown voltage.

Abstract: An aqueous inkjet ink composition comprising a pigment, a pigment-dispersing resin, resin fine particles (A), water, and hydrophilic solvents (B), the resin fine particles (A) being formed by emulsion polymerizing ethylenically unsaturated monomers including: 20% to 80% by weight of an aromatic ethylenically unsaturated monomer (C) that does not have an ionic functional group; 0.6% to 6% by weight of water-soluble ethylenically unsaturated monomers (F) consisting of 0.5% to 3% by weight of a sulfonic acid group-containing ethylenically unsaturated monomer (D) and 0.1% to 3% by weight of a nonionic water-soluble ethylenically unsaturated monomer (E); and 0.1% to 10% by weight of a crosslinkable ethylenically unsaturated monomer (G), and the hydrophilic solvents (B) including a glycol-based solvent (H) and an ethylene glycol ether-based solvent (I) is provided.

Abstract: A method of producing microcapsules having an electrophoretic particle dispersion encapsulated comprises the steps of: emulsifying and dispersing a hydrophobic dispersion having electrophoretic particles dispersed in a hydrophobic medium by using a high-speed rotating stirring apparatus wherein the circumferential speed at the end of a stirring part is 2 m/s to 90 m/s, and the distance (a) between the end of the stirring part and that immobile part of the stirring apparatus which is nearest to the end of the stirring part is 0 mm<(a)<20 mm; and forming microcapsules of the emulsified and dispersed hydrophobic dispersion under stirring with a stirring blade.

Abstract: A method of producing microcapsules having an electrophoretic particle dispersion encapsulated comprises the steps of: emulsifying and dispersing a hydrophobic dispersion having electrophoretic particles dispersed in a hydrophobic medium by using a high-speed rotating stirring apparatus wherein the circumferential speed at the end of a stirring part is 2 m/s to 90 m/s, and the distance (a) between the end of the stirring part and that immobile part of the stirring apparatus which is nearest to the end of the stirring part is 0 mm<(a)<20 mm; and forming microcapsules of the emulsified and dispersed hydrophobic dispersion under stirring with a stirring blade.

Abstract: The coating material is supplied to a coating die provided with a manifold chamber, a draw-in chamber provided with a diaphragm, a supply passage and a discharge opening. The coating material is stored temporarily in the manifold chamber, is supplied through the supply passage to the discharge opening, and is discharged through the discharge opening onto the surface of the base sheet. The discharge of the coating material through the discharge opening is interrupted by deforming the diaphragm so as to form a draw-in chamber. The ball nut is driven by the servomotor so as to move the ball screw axially away from the supply passage to deform the flexible diaphragm so that the coating material is drawn into the draw-in chamber to interrupt discharging the coating material through the discharge opening. Thus, the coating material is applied intermittently to the substrate.

Abstract: An upper die unit (37) and a lower die unit (39) are disposed in opposition, with a gap, to a substrate (31) being conveyed, and provided with coating agent supply flow paths (97, 99) which have inlet paths (103, 105) for a coating agent to flow in and delivery ports (101, 102) for delivering the coating agent to coat the substrate (31) therewith. An accumulation piece (119, 121) installed in a flow path part (97b, 99b) of each die unit (37, 39) moves in the direction in which it goes away from the flow path part (97b, 99b), drawing in the coating agent, dwelling the delivery of the coating agent from the delivery port (101, 102), forming a non-coated part (F), and repeats a reciprocating action, repeating a coating and non-coating. An elastic plate (355) on a way of the coating agent supply flow path (339) is displaced in accordance with advance/retreat actions of a piston member (363) caused by a rotation of a cam (387).

Abstract: The coating material is supplied to a coating die provided with a manifold chamber, a draw-in chamber provided with a diaphragm, a supply passage and a discharge opening. The coating material is stored temporarily in the manifold chamber, is supplied through the supply passage to the discharge opening, and is discharged through the discharge opening onto the surface of the base sheet. The discharge of the coating material through the discharge opening is interrupted by deforming the diaphragm so as to form a draw-in chamber. The ball nut is driven by the servomotor so as to move the ball screw axially away from the supply passage to deform the flexible diaphragm so that the coating material is drawn into the draw-in chamber to interrupt discharging the coating material through the discharge opening. Thus, the coating material is applied intermittently to the substrate.

Abstract: A polysilicon film is deposited in a trench formed in a silicon element substrate. The polysilicon film in the trench and on the silicon element substrate is anisotropically etched, so that the film remains on the side wall of the trench. The polysilicon film on the side wall is oxidized to obtain an insulating film, which buries the trench. At the same time, an oxidized film is formed on the surface of the silicon element substrate to complete a trench-mold separation area.

Abstract: A coating die is disclosed, in which a slit-like spacing 29 is formed between a pair of die elements 25, 27 arranged in opposed relation to each other. A band-shaped electrode sheet 23 is movable along the length of the spacing 29. The sides of the slit-like spacing along the width of the electrode sheet 23 are enclosed. An electrode piling agent is supplied from an external source into the die element pair 25, 27 through supply flow paths 47, 49. Discharge ports 47a, 49a of the supply flow paths 47, 49 are open to the slit-like spacing 29. The portion of the spacing 29 downstream of the discharge ports 47a, 49a in the direction of movement of the electrode sheet 23 has a thickness equivalent to the thickness of the electrode sheet 23 plus the thickness of the electrode piling agent coated on the two sides of the electrode sheet 23. The portion of the spacing 29 upstream of the discharge ports 47a, 49a has a thickness substantially equal to the thickness of the electrode sheet 23.

Abstract: A polysilicon film is deposited in a trench formed in a silicon element substrate. The polysilicon film in the trench and on the silicon element substrate is anisotropically etched, so that the film remains on the side wall of the trench. The polysilicon film on the side wall is oxidized to obtain an insulating film, which buries the trench. At the same time, an oxidized film is formed on the surface of the silicon element substrate to complete a trench-mold separation area.

Abstract: Air-blowing nozzles 21 for blowing a hot air are provided in both sides of an electrode sheet 33 for a battery both surfaces of which an electrode compounding agent has been applied to. In each of the air-blowing nozzles 21, a pair of slit-shaped blowholes 65 being extended in the width direction of the electrode sheet 33 are provided on both of the upper and lower sides of the end face part 63. The hot air blown off from a pair of the upper and lower blowholes 65 dries the electrode compounding agent as well as pressurizes a space between the electrode sheet 33 and the end face part 63 to form a pressure room P, and the left and right pressure rooms P hold the electrode sheet 33 to suppress its sway.

Abstract: Air-blowing nozzles 21 for blowing a hot air are provided in both sides of an electrode sheet 33 for a battery both surfaces of which an electrode compounding agent has been applied to. In each of the air-blowing nozzles 21, a pair of slit-shaped blowholes 65 being extended in the width direction of the electrode sheet 33 are provided on both of the upper and lower sides of the end face part 63. The hot air blown off from a pair of the upper and lower blowholes 65 dries the electrode compounding agent as well as pressurizes a space between the electrode sheet 33 and the end face part 63 to form a pressure room P, and the left and right pressure rooms P hold the electrode sheet 33 to suppress its sway.

Abstract: A method for separating a joined substrate type wafer, which wafer is composed of a pair of semiconductor substrates joined through an insulation film, utilizes dielectrics through simple processing steps. Trenches for separating a semiconductor substrate with dielectrics are dug from the surface of the substrate and a dielectrics film is deposited on the surface of the substrate including the trenches. Then poly-crystalline silicon under layer is grown by CVD method to a thickness of about 0.5 .mu.m. Thereafter, a poly-crystalline silicon filler layer, which is deep enough to fill the trenches, is grown over the underlying poly-crystalline silicon under layer, followed by selectively removing the two poly-crystalline silicon layers from the surface of the substrate excluding the regions inside the trenches. An alternative embodiment contemplates depositing a second dielectrics film interposed between the poly-crystalline silicon under layer and the poly-crystalline silicon filler layer.

Abstract: A highly reliable memory device with excellent heat resistance that can be used in any environment utilizes a chemical change to define a state transition. The memory device includes a micro vacuum tube structure having a recess portion formed on an upper face of a quartz substrate, a cold cathode having many comb-tooth like tips extending from the quartz substrate over to one side of the recess portion, a rectangular control electrode disposed on the side of the cold cathode at the bottom of the recess portion, an anode extending from the quartz substrate over to the other side of the recess portion and facing opposed to the cold cathode, and a sealing member for vacuum sealing a space inside the recess portion 11a. N.sub.2 and O.sub.2 gases are enclosed in a space under the pressure of 0.2 mmHg. By changing the control electrode voltage, energy of accelerated electrons is changed: NO is produced at the control voltage of 17 eV, NO2 at 23 eV and the product gases dissociate to N.sub.2 and O.sub.