Abstract: Disclosed is a monomer containing an N-acylcarbamoyl group and a lactone skeleton. The monomer is exemplified by Formula (1): where Ra is selected typically from hydrogen and C1-C6 alkyl; R1 is, independently in each occurrence, selected typically from halogen and optionally halogenated C1-C6 alkyl; “A” is selected from C1-C6 alkylene, oxygen, sulfur, and non-bond; m represents an integer of 0 to 8; X represents, independently in each occurrence, specific N-acylcarbamoyl; n represents an integer of 1 to 9; and Y represents a C1-C6 divalent organic group.

Abstract: A resist composition comprising a compound (m0) (wherein Rb1 represents an electron withdrawing group; Rb2 and Rb3 each independently represents an aryl group, an alkyl group or an alkenyl group, provided that Rb2 and Rb3 may be mutually bonded to form a ring with the sulfur atom; and X0? represents a monovalent counteranion).

Abstract: A method of producing a structure containing a phase-separated structure, including: forming a layer including a neutralization film on a substrate; forming a layer containing a block copolymer on the layer including the neutralization film, the PA block and PB block being mutually bonded in the block copolymer, and the PB block including a structural unit other than a structural unit constituting the PA block; and subjecting the layer containing the block copolymer to an annealing treatment, such that, in the case where a surface free energy of the PA block, a surface free energy of the PB block and a surface free energy of the neutralization film are represented by a coordinate point A of the PA block, a coordinate point B of the PB block and a coordinate point N of the neutralization film, respectively in the plane of coordinates, the coordinate point N of the neutralization film is within the predetermined range.

Abstract: A method of forming a structure containing a phase-separated structure, the method including: a step of forming a layer containing a block copolymer having a plurality of blocks bonded and a purity of 98% or more, and a step of phase-separating the layer containing the block copolymer.

Abstract: A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution by the action of acid, and which includes a base component which exhibits changed solubility in a developing solution by the action of acid, and a nitrogen-containing compound which has a boiling point of 50 to 200° C., a conjugate acid thereof having a pKa of 0 to 7, and a photodecomposable base; and a method of forming a resist pattern using the resist composition.

Abstract: A resist composition including a base material component whose solubility in a developing solution changes by the action of an acid and an acid generator component which generates an acid upon exposure. The acid generator component includes an acid generator that includes a compound containing nitrogen atoms having proton acceptor properties and sites capable of generating an acid upon exposure in the same molecule, the number of the sites being larger than the number of the nitrogen atoms.

Abstract: A resist composition containing a base component (A) that exhibits changed solubility in a developing solution under action of acid, a photoreactive quencher (C), and an acid generator component (B) that generates acid upon exposure, and further containing an acid (G) having a pKa of 4 or less.

Abstract: A method of producing a structure containing a phase-separated structure, including forming a layer containing a block copolymer on a substrate; applying a top coat material to the layer containing the block copolymer to form a top coat film; and subjecting the layer including the block copolymer having the top coat film formed thereon to annealing treatment so as to conduct a phase separation of the layer, the top coat material including an organic solvent component and a polymeric compound containing a structural unit having either a dicarboxylic acid or a salt of a dicarboxylic acid, and the organic solvent component containing water and an alcohol having 3 or more carbon atoms.

Abstract: A resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) containing a polymeric compound (A1) having a structural unit (a5) represented by general formula (a5-0) shown below (R1 represents a sulfur atom or an oxygen atom; R2 represents a single bond or a divalent linking group; and Y represents an aromatic hydrocarbon group or an aliphatic hydrocarbon group having a polycyclic group, provided that the aromatic hydrocarbon group or the aliphatic hydrocarbon may have a carbon atom or a hydrogen atom thereof substituted with a substituent.

Abstract: A resist composition which generates an acid upon exposure and exhibits changed solubility in a developing solution by the action of an acid, the resist composition containing a base material component which exhibits changed solubility in a developing solution by the action of an acid; and the base material component containing a resin component having a constituent unit derived from a compound represented by the following general formula (a0-1), at least two or more kinds of a constituent unit containing an acid dissociable group represented by the following general formula (a1-r-1) or (a1-r-2), and a constituent unit containing a lactone-containing, an —SO2-containing, or a carbonate-containing cyclic group; and a method for forming a resist pattern using the resist composition.

Abstract: A compound represented by general formula (b1) shown below (in the formula, Y1 represents a divalent linking group; W represents S, Se or I; R1 represents a hydrocarbon group; represents an alkyl group of 1 to 5 carbon atoms or an alkoxy group of 1 to 5 carbon atoms; when W represents I, m+n=2, and when W represents S or Se, m+n=3, provided that m?1 and n?0; p represents an integer of 0 to 5; and X? represents a counteranion.

Abstract: A compound represented by formula (I). In the formula, R1 represents a hydrocarbon group of 1 to 10 carbon atoms; Z represents a hydrocarbon group of 1 to 10 carbon atoms or a cyano group; provided that R1 and Z may be mutually bonded to form a ring; X represents a divalent linking group having any one selected from —O—C(?O)—, —NH—C(?O)— and —NH—C(?NH)— on a terminal that comes into contact with Q; p represents an integer of 1 to 3; Q represents a hydrocarbon group having a valency of (p+1), provided that, when p is 1, Q may be a single bond; R2 represents a single bond, an alkylene group which may have a substituent or an arylene group which may have a substituent; q represents 0 or 1; r represents an integer of 0 to 8; and A+ represents a metal cation or an organic cation.

Abstract: What is provided is a positive-type photoresist composition containing an acid generator (A) capable of generating an acid when irradiated with an active ray or radiation, a resin (B) whose solubility in alkali increases under the action of acid, and an organic solvent (S), the photoresist composition further containing an alkali-metal salt (C).

Abstract: A resist composition which generates acid upon exposure and exhibits changed solubility in an alkali developing solution under action of acid, the resist composition including a polymeric compound containing a base decomposable group in a main chain thereof.

Abstract: A method of producing a structure containing a phase-separated structure, including a step in which a layer including an Si-containing block copolymer having a plurality of blocks bonded is formed between guide patterns on a substrate; a step in which a solution of a top coat material is applied to the layer and the guide patterns so as to form a top coat film; and a step in which the layer including the Si-containing block copolymer and having the top coat film formed thereon is subjected to annealing treatment so as to conduct a phase separation of the layer; in which a solvent of the solution of the top coat material contains no basic substance.

Abstract: A negative resist composition including a complex represented by the general formula (1); and a polymerization initiator. in which M represents hafnium (Hf) or zirconium (Zr), X represents a ligand including a conjugate base of an acid which has an acid dissociation constant (pKa) of 3.8 or less and has a polymerizable group, Y represents a ligand having no polymerizable group, and n represents an integer of 1 to 4.

Abstract: A method of producing an ammonium salt compound, including reacting a first ammonium salt compound containing a first ammonium cation which is a primary, secondary or tertiary ammonium cation with a nitrogen-containing compound having a lone pair to obtain a second ammonium salt compound which contains a conjugated acid of the nitrogen-containing compound, the conjugated acid of the nitrogen-containing compound having a larger pKa than the pKa of the first ammonium cation; and a method of producing a compound, including a step of salt exchange between the ammonium salt compound obtained by the aforementioned production method and a sulfonium cation or iodonium cation which has a higher hydrophobicity than the hydrophobicity of the conjugated acid of the nitrogen-containing compound.

Abstract: A resist composition comprising: a base component (A) that exhibits changed solubility in a developing solution by the action of acid; a photoreactive quencher (C); and an acid-generator component (B) that generates acid upon exposure, wherein the photoreactive quencher (C) contains a compound represented by general formula (c1) shown below. In the formula, R1 represents a hydrogen atom or a hydrocarbon group of 1 to 20 carbon atoms which may have a substituent; each of R2 and R3 independently represents a hydrogen atom or a hydrocarbon group of 1 to 20 carbon atoms which may have a substituent; at least two of R1 to R3 may be mutually bonded to form a ring; X represents an oxygen atom or a sulfur atom; n represents 0 or 1; and Z+ represents an organic cation.

Abstract: Provided is a novel sulfonium salt that has high solubility in a solvent and has high light sensitivity to, especially, light having a wavelength not longer than deep-UV (254 nm) and a novel photo-acid generator comprising the sulfonium salt. The invention relates to a sulfonium salt represented by the following general formula (1) and a novel photo-acid generator comprising the sulfonium salt. wherein R1 represents an electron withdrawing group; R2 and R3 each independently represent an alkyl group having 1 to 5 carbon atoms, an alkoxy group, an acyl group, a halogenated alkyl group, a halogen atom, a hydroxyl group, a cyano group, or a nitro group; p and q each independently represent an integer of 0 to 5; and X?represents a monovalent counter anion.

Abstract: A resist composition including a base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon exposure, the acid-generator including an acid generator consisting of a compound represented by general formula (b1-1) shown below: In which RX represents a hydrocarbon group which may have a substituent exclusive of a nitrogen atom; each of Q2 and Q3 independently represents a single bond or a divalent linkage group; Y1 represents an alkylene group or fluorinated alkyl group of 1 to 4 carbon atoms; and Z+ represents an organic cation exclusive of an ion represented by general formula (w-1).