Abstract: A liquid processing method is provided for performing a liquid process on a front surface of a substrate by using a processing solution and then performing a rinse process on the front surface of the substrate by using a rinse solution having a temperature lower than a temperature of the processing solution. The method includes performing an intermediate process between the liquid process and the rinse process, for adjusting a temperature of the front surface of the substrate to a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution. In the intermediate process, an intermediate processing solution having a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution is supplied only to a rear surface of the substrate.

Abstract: Disclosed are a liquid processing apparatus and a liquid processing method that can prevent a substrate in a processing chamber from being contaminated due to contamination attached to a nozzle supporting arm that supports a nozzle. The liquid processing apparatus of the present disclosure includes: a processing chamber having a substrate holding unit configured to hold a substrate and a cup disposed around the substrate holding unit; a nozzle configured to supply a fluid to the substrate held by the substrate holding unit; and a nozzle supporting arm configured to support the nozzle. An arm cleaning unit configured to clean the nozzle supporting arm is installed in the liquid processing apparatus.

Abstract: Disclosed is a substrate liquid processing apparatus. The substrate liquid processing apparatus includes a processing unit, a nozzle, a silylation liquid supply mechanism, and a blocking fluid supply mechanism. The processing unit performs a water repellency imparting processing on a substrate by supplying a silylation liquid to the substrate. The nozzle includes an ejection port configured to supply the silylation liquid to the substrate positioned in the processing unit, and a silylation liquid flow path in which the silylation liquid flows toward the ejection port. The silylation liquid supply mechanism supplies the silylation liquid to the silylation liquid flow path in the nozzle through a silylation liquid supply line. The blocking fluid supply mechanism supplies a blocking fluid that blocks the silylation liquid within the silylation liquid flow path in the nozzle from an atmosphere outside the ejection port.

Abstract: A top plate 32 is provided to be moved in a horizontal direction between an advanced position, in which the top plate 32 covers from above a substrate W held by a substrate holding unit 21, and a retracted position that is retracted from the advanced position. An air hood 70 configured to supply a purified gas downward is provided to be lifted between a lower position, in which the air hood covers from above the substrate W held by the substrate holding unit 21, and an upper position located above the lower position.

Abstract: A liquid processing method is provided for performing a liquid process on a front surface of a substrate by using a processing solution and then performing a rinse process on the front surface of the substrate by using a rinse solution having a temperature lower than a temperature of the processing solution. The method includes performing an intermediate process between the liquid process and the rinse process, for adjusting a temperature of the front surface of the substrate to a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution. In the intermediate process, an intermediate processing solution having a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution is supplied only to a rear surface of the substrate.

Abstract: There is provided a liquid processing method for performing a liquid process on a front surface of a substrate by using a processing solution and then performing a rinse process on the front surface of the substrate by using a rinse solution having a temperature lower than a temperature of the processing solution. The liquid processing method includes performing an intermediate process between the liquid process and the rinse process, for adjusting a temperature of the front surface of the substrate to a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution.

Abstract: Disclosed is a liquid processing method which may de-electrify the surface of a hydrophobized substrate. A substrate electrified according to a liquid processing is de-electrified by supplying a hydrophobizing liquid to a surface of the substrate subjected to the liquid processing while rotating the substrate, and performing rinsing by supplying an alkaline rinsing liquid to the hydrophobized surface of the substrate.

Abstract: A control device for AC rotary machine includes a current vector detection section (3), a magnetic flux vector detection section (9), an adaptive observation section (8), a control section (4), a voltage application section (5), a deviation vector calculation section (6) for outputting a current deviation vector and a magnetic flux deviation vector, and a deviation amplification section (7). The adaptive observation section (8) calculates an estimated current vector, an estimated magnetic flux vector, and an estimated position, based on a voltage instruction vector and an amplified deviation vector. Further, the control section (4) superimposes a high-frequency voltage vector, and the magnetic flux vector detection section (9) calculates a detected magnetic flux vector, based on a magnitude of a high-frequency current vector having the same frequency component as the high-frequency voltage vector, included in a detected current vector, and on a magnitude of a rotor magnetic flux.

Abstract: A control device of an AC rotating machine includes a controller receiving a current vector instruction and a detection current vector as inputs and outputs a voltage vector instruction to the AC rotating machine, an alternating current amplitude computation mechanism computing an alternating current amplitude of at least one of a parallel component and an orthogonal component with respect to the voltage vector instruction, an alternating current amplitude instruction generator generating an alternating current amplitude instruction from the current vector instruction, and a magnetic-pole position computation mechanism computing an estimated magnetic-pole position of the AC rotating machine. The magnetic-pole position computation mechanism computes the estimated magnetic-pole position so that the alternating current amplitude coincides with the alternating current amplitude instruction.

Abstract: A control device for rotary machine includes: a voltage instruction generation section for generating a voltage instruction; a voltage application section for applying voltage to a rotary machine based on the voltage instruction; a current detection section for detecting rotary machine current of the rotary machine; and an inductance calculation section for calculating an inductance of the rotary machine from the voltage instruction and the rotary machine current. The voltage instruction generation section generates voltage instructions of constant DC voltages. The voltage application section applies voltages to the rotary machine based on the voltage instructions. The inductance calculation section calculates the inductance from a voltage instruction for measurement arbitrarily selected from the voltage instructions, and the rotary machine currents detected by the current detection section before and after application of the voltage instruction for measurement.

Abstract: The present disclosure provides a substrate processing apparatus including: a substrate processing chamber configured to process a substrate on which a target layer to be removed is formed on the surface of an underlying layer; a substrate holding unit provided in the substrate processing chamber and configured to hold the substrate; a mixed liquid supplying unit configured to supply a mixed liquid of sulfuric acid and hydrogen peroxide to the substrate held by the substrate holding unit in a mixing ratio of the hydrogen peroxide and a temperature that does not damage the underlying layer while removing the target layer; and an OH-group supplying unit configured to supply a fluid containing OH-group to the substrate in an amount that does not damage the underlying layer when the mixed liquid and the OH-group are mixed on the substrate.

Abstract: The present disclosure provides a substrate processing method and a substrate processing apparatus. The substrate processing method includes: generating an SPM liquid of a first temperature that contains Caro's acid having a separation effect of a resist film formed on the surface of a substrate by mixing heated sulfuric acid with hydrogen peroxide; cooling the SPM liquid to a second temperature at which a reduction effect of film loss occurs; and applying the SPM liquid of the second temperature to the resist film thereby separating the resist film.

Abstract: A liquid treatment apparatus includes a substrate holder (21) that holds a substrate horizontally and rotates the substrate, a treatment liquid nozzle (82) that supplies a treatment liquid to the substrate held by the substrate holder, a cup (40) that is arranged outside of a peripheral edge of the substrate held by the substrate holder and receives the treatment liquid which has been supplied to the substrate by the treatment liquid nozzle, a top plate (32) that covers the substrate held by the substrate holder from above, a top plate rotation driving mechanism that rotates the top plate, and a liquid receiving member (130) that surrounds a peripheral edge of the top plate and has a circular liquid receiving space (132).

Abstract: A top plate 32 is provided to be moved in a horizontal direction between an advanced position, in which the top plate 32 covers from above a substrate W held by a substrate holding unit 21, and a retracted position that is retracted from the advanced position. An air hood 70 configured to supply a purified gas downward is provided to be lifted between a lower position, in which the air hood covers from above the substrate W held by the substrate holding unit 21, and an upper position located above the lower position.

Abstract: A top plate 32 is provided with a top plate rotation mechanism configured to rotate the top plate 32 in a horizontal plane. An outside cup peripheral case 50 disposed around a cup 40 is configured to move between an upper position, in which a top end of the cylinder 50 is positioned above the cup 40, and a lower position located below the upper position. A nozzle support arm 82 configured to support a nozzle 82a is moved, in a horizontal direction, between an advanced position, in which the arm 82 is advanced into the outside cup peripheral case 50 via a side opening 50m formed in a side surface of the outside cup peripheral case 50 when the cylinder 50 is located in the upper position, and a retracted position, in which the arm 82 is retracted outward from the outside cup peripheral case 50.

Abstract: Disclosed are a liquid processing apparatus and a liquid processing method that can prevent a substrate in a processing chamber from being contaminated due to contamination attached to a nozzle supporting arm that supports a nozzle. The liquid processing apparatus of the present disclosure includes: a processing chamber having a substrate holding unit configured to hold a substrate and a cup disposed around the substrate holding unit; a nozzle configured to supply a fluid to the substrate held by the substrate holding unit; and a nozzle supporting arm configured to support the nozzle. An arm cleaning unit configured to clean the nozzle supporting arm is installed in the liquid processing apparatus.

Abstract: There is provided a liquid processing method for performing a liquid process on a front surface of a substrate by using a processing solution and then performing a rinse process on the front surface of the substrate by using a rinse solution having a temperature lower than a temperature of the processing solution. The liquid processing method includes performing an intermediate process between the liquid process and the rinse process, for adjusting a temperature of the front surface of the substrate to a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution.