Abstract: Aspects of this disclosure relate to an acoustic wave device that includes a multi-layer interdigital transducer electrode. The acoustic wave device includes a piezoelectric layer and an interdigital transducer electrode on the piezoelectric layer. The interdigital transducer electrode includes a first interdigital transducer electrode layer positioned between a second interdigital transducer electrode layer and the piezoelectric layer. The second interdigital transducer electrode layer can include aluminum and having a thickness of at least 200 nanometers. The acoustic wave device can include a temperature compensation layer arranged such that the interdigital transducer electrode is positioned between the piezoelectric layer and at least a portion of the temperature compensation layer. Related filters, modules, wireless communication devices, and methods are disclosed.

Abstract: An acoustic wave device is disclosed. The acoustic waved device can be a shear horizontal mode surface acoustic wave device. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, and a temperature compensation layer over the interdigital transducer electrode. The piezoelectric layer can be a lithium niobate layer with a cut angle in a range of ?20° YX to 25° YX. The interdigital transducer electrode including a first layer and a second layer. The first layer affects acoustic properties of the acoustic wave device and the second layer affects electrical properties of the acoustic wave device. The second layer is positioned between the piezoelectric layer and the first layer such that a frequency response of the acoustic wave device includes a Rayleigh mode response at a frequency higher than a shear horizontal mode response.

Abstract: An acoustic wave device is disclosed. The acoustic waved device can be a shear horizontal mode surface acoustic wave device. The acoustic wave device can include a piezoelectric layer, an interdigital transducer electrode over the piezoelectric layer, and a temperature compensation layer over the interdigital transducer electrode. The piezoelectric layer can be a lithium niobate layer with a cut angle in a range of ?20° YX to 25° YX. The interdigital transducer electrode includes a first layer having a first thickness and a second layer having a second thickness. The first layer affects acoustic properties of the acoustic wave device and the second layer affects electrical properties of the acoustic wave device. The first layer is positioned between the piezoelectric layer and the second layer. The first thickness is configured such that a frequency response of the acoustic wave device includes a Rayleigh mode response at a frequency higher than a shear horizontal mode response resonance.

Abstract: A surface acoustic wave device includes a piezoelectric substrate and a multi-layer interdigital transducer electrode disposed on the piezoelectric substrate. The multi-layer interdigital transducer electrode includes a first electrode layer and a second electrode layer. The second electrode layer is disposed between the piezoelectric substrate and the first electrode layer. The first electrode layer has a higher density than a density of the second electrode layer. The second electrode layer has a higher conductivity than a conductivity of the first electrode layer. Related radio frequency modules and wireless communication devices are also provided.

Abstract: Aspects of this disclosure relate to bulk acoustic wave resonators. A bulk acoustic wave resonator includes a patterned mass loading layer that affects a resonant frequency of the bulk acoustic wave resonator. The patterned mass loading layer can have a duty factor in a range from 0.2 to 0.8 in a main acoustically active region of the bulk acoustic wave resonator. Related filters, acoustic wave dies, radio frequency modules, wireless communications devices, and methods are disclosed.

Abstract: A acoustic wave resonator comprises a piezoelectric substrate and a plurality of interdigital transducer (IDT) electrodes disposed on the piezoelectric substrate, the plurality of IDT electrodes formed of a mixture of tungsten and chromium to provide for reduction in size and increase in quality factor of the acoustic wave resonator.

Abstract: Aspects of this disclosure relate to bulk acoustic wave resonators. A bulk acoustic wave resonator includes a patterned mass loading layer that affects a resonant frequency of the bulk acoustic wave resonator. The patterned mass loading layer can have a duty factor in a range from 0.2 to 0.8 in a main acoustically active region of the bulk acoustic wave resonator. Related filters, acoustic wave dies, radio frequency modules, wireless communications devices, and methods are disclosed.

Abstract: Aspects of this disclosure relate bulk acoustic wave resonators with a patterned mass loading layer at least contributing to a difference in mass loading between a main acoustically active region of the bulk acoustic wave resonator and a recessed frame region of the bulk acoustic wave resonator. Related methods of manufacturing can involve forming the patterned mass loading layer in the main acoustically active region and the recessed frame region in a common processing step such that the patterned mass loading layer has a higher density in the main acoustically active region than in the recessed frame region.

Abstract: Aspects of this disclosure relate to bulk acoustic wave resonators with patterned mass loading layers. Two different bulk acoustic wave resonators of an acoustic wave filter and/or an acoustic wave die have respective patterned mass loading layers with different densities. The patterned mass loading layers contribute to the two different bulk acoustic wave resonators having different respective resonant frequencies. Related bulk acoustic wave devices, filters, acoustic wave dies, radio frequency modules, wireless communication devices, and methods are disclosed.

Abstract: Aspects of this disclosure relate to methods of manufacturing bulk acoustic wave resonators. During a common processing step, a first patterned mass loading layer for a first bulk acoustic wave resonator is formed and a second patterned mass loading layer for a second bulk acoustic wave resonator is formed. The first patterned mass loading layer has a different density than the second patterned mass loading layer.

Abstract: Aspects of this disclosure relate to an acoustic wave device that includes a multi-layer interdigital transducer electrode. The acoustic wave device includes a piezoelectric layer and an interdigital transducer electrode on the piezoelectric layer. The interdigital transducer electrode includes a first interdigital transducer electrode layer positioned between a second interdigital transducer electrode layer and the piezoelectric layer. The second interdigital transducer electrode layer can include aluminum and having a thickness of at least 200 nanometers. The acoustic wave device can include a temperature compensation layer arranged such that the interdigital transducer electrode is positioned between the piezoelectric layer and at least a portion of the temperature compensation layer. Related filters, modules, wireless communication devices, and methods are disclosed.

Abstract: Aspects of this disclosure relate to a surface acoustic wave resonator having a multi-layer substrate with heat dissipation. The multi-layer substrate includes a support substrate, a piezoelectric layer, and a thermally conductive layer configured to dissipate heat associated with the surface acoustic wave resonator. The thermally conductive layer is disposed between the support substrate and the piezoelectric layer. Related surface acoustic wave filters, radio frequency modules, and wireless communication devices are also disclosed.

Abstract: Aspects of this disclosure relate to an acoustic wave device that includes a multi-layer interdigital transducer electrode. The acoustic wave device includes a piezoelectric layer and an interdigital transducer electrode on the piezoelectric layer. The interdigital transducer electrode includes a first interdigital transducer electrode layer positioned between a second interdigital transducer electrode layer and the piezoelectric layer. The second interdigital transducer electrode layer can include aluminum and having a thickness of at least 200 nanometers. The acoustic wave device can include a temperature compensation layer arranged such that the interdigital transducer electrode is positioned between the piezoelectric layer and at least a portion of the temperature compensation layer. Related filters, modules, wireless communication devices, and methods are disclosed.

Abstract: Aspects of this disclosure relate to a filter that includes an acoustic wave device with a multi-layer substrate with heat dissipation. The multi-layer substrate includes a support substrate (e.g., a quartz substrate), a piezoelectric layer, an interdigital transducer electrode on the piezoelectric layer, and a thermally conductive layer configured to dissipate heat associated with the acoustic wave device. The thermally conductive layer is disposed between the support substrate and the piezoelectric layer. The thermally conductive layer has a thickness that is greater than 10 nanometers and less than a thickness of the piezoelectric layer.

Abstract: Aspects of this disclosure relate to an acoustic wave device that includes a multi-layer interdigital transducer electrode. The acoustic wave device includes a piezoelectric layer and an interdigital transducer electrode on the piezoelectric layer. The interdigital transducer electrode includes a first interdigital transducer electrode layer positioned between a second interdigital transducer electrode layer and the piezoelectric layer. The second interdigital transducer electrode layer can include aluminum and having a thickness of at least 200 nanometers. The acoustic wave device can include a temperature compensation layer arranged such that the interdigital transducer electrode is positioned between the piezoelectric layer and at least a portion of the temperature compensation layer. Related filters, modules, wireless communication devices, and methods are disclosed.

Abstract: Aspects of this disclosure relate to a filter that includes an acoustic wave device with a multi-layer substrate with heat dissipation. The multi-layer substrate includes a support substrate (e.g., a quartz substrate), a piezoelectric layer, an interdigital transducer electrode on the piezoelectric layer, and a thermally conductive layer configured to dissipate heat associated with the acoustic wave device. The thermally conductive layer is disposed between the support substrate and the piezoelectric layer. The thermally conductive layer has a thickness that is greater than 10 nanometers and less than a thickness of the piezoelectric layer.

Abstract: Methods and apparatus for reducing electric loss in an elastic wave element. In one example such a method includes forming an IDT electrode on a piezoelectric body, and forming the connection wiring on the piezoelectric body and electrically connecting the connection wiring to the IDT electrode. Forming the connection wiring includes sequentially forming a lower connection wiring on an upper surface of the piezoelectric body and forming an upper connection wiring over the lower connection wiring. The method further includes forming a reinforcement electrode over the connection wiring that divides the upper connection wiring into first and second upper connection wirings electrically connected to one another by the reinforcement electrode. The reinforcement electrode is formed abutting an upper surface of the lower connection wiring between the first and second upper connection wirings and electrically connected to the lower connection wiring and to the first and second upper connection wirings.

Abstract: An elastic wave device including a substrate, an interdigital transducer (IDT) electrode provided on an upper surface of the substrate, a first wiring electrode provided on the upper surface of the substrate and connected to the IDT electrode, a dielectric film that does not cover a first region of the first wiring electrode but covers a second region of the first wiring electrode above the substrate, the first wiring electrode including a cutout in the second region, and a second wiring electrode that covers an upper surface of the first wiring electrode in the first region and an upper surface of the dielectric film in the second region above the substrate.

Abstract: Aspects of this disclosure relate to a filter for a carrier aggregation system. The filter is configured to pass a first band of a carrier aggregation signal. The filter includes a surface acoustic wave device that includes a quartz substrate, an interdigital transducer electrode, and a lithium-based piezoelectric layer positioned between the quartz substrate and the interdigital transducer electrode. The surface acoustic wave device is configured to suppress a higher order spurious mode corresponding to a second band of the carrier aggregation signal.

Abstract: An elastic wave device including a sealing structure. Examples of the elastic wave device include a piezoelectric substrate, an IDT electrode provided on the substrate, a first wiring electrode provided on the substrate adjacent the IDT electrode, a second wiring electrode provided on the first wiring electrode, and a dielectric sealing structure that extends over and seals an excitation space above the IDT electrode in which the IDT electrode excites the elastic wave. The second wiring electrode includes a protrusion formed on its outer periphery and extending beyond the first wiring electrode into the excitation space. The first and/or second wiring electrodes are electrically connected to the IDT electrode. The dielectric sealing structure includes a sealing wall provided on the second wiring electrode, the sealing wall being spaced apart from the IDT electrode by the protrusion and having a side surface that defines a side edge of the excitation space.