Abstract: An elastic wave device including a substrate, an interdigital transducer (IDT) electrode provided on an upper surface of the substrate, a first wiring electrode provided on the upper surface of the substrate and connected to the IDT electrode, a dielectric film that does not cover a first region of the first wiring electrode but covers a second region of the first wiring electrode above the substrate, the first wiring electrode including a cutout in the second region, and a second wiring electrode that covers an upper surface of the first wiring electrode in the first region and an upper surface of the dielectric film in the second region above the substrate.

Abstract: Methods and apparatus for reducing electric loss in an elastic wave element. In one example such a method includes forming an IDT electrode on a piezoelectric body, and forming the connection wiring on the piezoelectric body and electrically connecting the connection wiring to the IDT electrode. Forming the connection wiring includes sequentially forming a lower connection wiring on an upper surface of the piezoelectric body and forming an upper connection wiring over the lower connection wiring. The method further includes forming a reinforcement electrode over the connection wiring that divides the upper connection wiring into first and second upper connection wirings electrically connected to one another by the reinforcement electrode. The reinforcement electrode is formed abutting an upper surface of the lower connection wiring between the first and second upper connection wirings and electrically connected to the lower connection wiring and to the first and second upper connection wirings.

Abstract: An elastic wave device including a substrate, an interdigital transducer (IDT) electrode provided on an upper surface of the substrate, a first wiring electrode provided on the upper surface of the substrate and connected to the IDT electrode, a dielectric film that does not cover a first region of the first wiring electrode but covers a second region of the first wiring electrode above the substrate, the first wiring electrode including a cutout in the second region, and a second wiring electrode that covers an upper surface of the first wiring electrode in the first region and an upper surface of the dielectric film in the second region above the substrate.

Abstract: Methods and apparatus for reducing electric loss in an elastic wave element. In one example, the elastic wave element includes a piezoelectric body having a upper surface, an interdigital transducer (IDT) electrode disposed on the piezoelectric body, a connection wiring disposed on the piezoelectric body and electrically connected to the IDT electrode, the connection wiring having a lower connection wiring and an upper connection wiring provided above the lower connection wiring, and a reinforcement electrode provided above the connection wiring, the reinforcement electrode being in contact with and electrically connected to the lower connection wiring.

Abstract: An elastic wave device including a sealing structure. Examples of the elastic wave device include a piezoelectric substrate, an IDT electrode provided on the substrate, a first wiring electrode provided on the substrate adjacent the IDT electrode, a second wiring electrode provided on the first wiring electrode, and a dielectric sealing structure that extends over and seals an excitation space above the IDT electrode in which the IDT electrode excites the elastic wave. The second wiring electrode includes a protrusion formed on its outer periphery and extending beyond the first wiring electrode into the excitation space. The first and/or second wiring electrodes are electrically connected to the IDT electrode. The dielectric sealing structure includes a sealing wall provided on the second wiring electrode, the sealing wall being spaced apart from the IDT electrode by the protrusion and having a side surface that defines a side edge of the excitation space.

Abstract: An elastic wave device that can be downsized. Certain examples of the elastic wave device include a substrate, an IDT electrode provided above the substrate, a wiring electrode provided above the substrate and connected to the IDT electrode, a sealing body sealing an excitation space in which the IDT electrode excites an elastic wave, and a sealing wall provided above the wiring electrode and forming a part of the sealing body. An outer periphery of the wiring electrode includes a protrusion. In one example, the wiring electrode includes a first wiring electrode provided on an upper surface of the substrate and a second wiring electrode provided on an upper surface of the first wiring electrode, an outer periphery of the second wiring electrode being provided with the protrusion.

Abstract: An acoustic wave device includes a piezoelectric substrate made of a lithium niobate material having the Euler angles (?, ?, ?), an electrode disposed on the piezoelectric substrate for exciting a major acoustic wave of a wavelength ?, and a protective layer disposed on the piezoelectric substrate to cover the electrode. The protective layer has a thickness greater than 0.27?. The Euler angles satisfy ?100°????60°; 1.193??2°???1.193?+2°; and either ???2??3° or ?2?+3°??.

Abstract: An acoustic wave element that includes a piezoelectric body, an aluminum oxide layer disposed on the piezoelectric body, an electrode disposed on the aluminum oxide layer, and a protection film disposed on the aluminum oxide layer to cover the electrode. The piezoelectric body is formed of a piezoelectric material based on lithium niobate having Euler angles (?, ?, ?). The aluminum oxide layer is formed of Al2O3. The electrode is configured to excite a main acoustic wave having a wavelength ?. The protection film has a film thickness greater than 0.27?. The Euler angles satisfy either ???2??3° or ?2?+3°?? and both of ?100°????60° and 2??2°???2?+2°.

Abstract: An elastic wave device that can be downsized. Certain examples of the elastic wave device include a substrate, an IDT electrode provided above the substrate, a wiring electrode provided above the substrate and connected to the IDT electrode, a sealing body sealing an excitation space in which the IDT electrode excites an elastic wave, and a sealing wall provided above the wiring electrode and forming a part of the sealing body. An outer periphery of the wiring electrode includes a protrusion. In one example, the wiring electrode includes a first wiring electrode provided on an upper surface of the substrate and a second wiring electrode provided on an upper surface of the first wiring electrode, an outer periphery of the second wiring electrode being provided with the protrusion.

Abstract: An elastic wave device including a substrate, an interdigital transducer (IDT) electrode provided on an upper surface of the substrate, a first wiring electrode provided on the upper surface of the substrate and connected to the IDT electrode, a dielectric film that does not cover a first region of the first wiring electrode but covers a second region of the first wiring electrode above the substrate, the first wiring electrode including a cutout in the second region, and a second wiring electrode that covers an upper surface of the first wiring electrode in the first region and an upper surface of the dielectric film in the second region above the substrate.

Abstract: Methods and apparatus for reducing electric loss in an elastic wave element. In one example, the elastic wave element includes a piezoelectric body having a upper surface, an interdigital transducer (IDT) electrode disposed on the piezoelectric body, a connection wiring disposed on the piezoelectric body and electrically connected to the IDT electrode, the connection wiring having a lower connection wiring and an upper connection wiring provided above the lower connection wiring, and a reinforcement electrode provided above the connection wiring, the reinforcement electrode being in contact with and electrically connected to the lower connection wiring.

Abstract: An acoustic wave device includes an interdigital transducer (IDT) electrode and a separate electrode facing the IDT electrode. The IDT electrode includes first and second comb-shaped electrode facing each other. The first comb-shaped electrode includes a first bus bar, first interdigitated electrode fingers, and first dummy electrode fingers. The second comb-shaped electrode includes a second bus bar second interdigitated electrode fingers interdigitated with the first interdigitated electrode fingers, second dummy electrode fingers facing the first interdigitated electrode fingers, weighted parts, and a non-weighted part. The weighted parts have electrodes at spaces between the second interdigitated electrode fingers and the second dummy electrode fingers. In the non-weighted part, there is no electrode at a space out of the spaces which is closest to the separate electrode in the non-interdigitated region.

Abstract: An acoustic wave resonance device includes: piezoelectric substrate (1), first acoustic wave resonator (100) provided on an upper surface of piezoelectric substrate (1) and including first interdigital transducer electrode (110), and second acoustic wave resonator (200) provided on piezoelectric substrate (1) and including second interdigital transducer electrode (210). First acoustic wave resonator (100) and second acoustic wave resonator (200) are connected to each other. An overlap width of a plurality of first comb-shaped electrodes (112) forming first acoustic wave resonator (100) is larger than an overlap width of a plurality of second comb-shaped electrodes (212) forming second acoustic wave resonator (200). With such a configuration, frequencies in which a transverse mode spurious response is generated can be distributed and loss can be reduced.

Abstract: A SAW filter includes a piezoelectric body, an IDT electrode on the piezoelectric body, and signal wiring electrically connected to the IDT electrode. The signal wiring has a thickness not less than a skin depth specified based on the frequency of a signal passing through the signal wiring and the electrical conductivity of the signal wiring. As a result, the signal wiring has low propagation loss of the signal passing through it, so that the SAW filter has excellent transmission characteristics.

Abstract: An acoustic wave device (5) includes a piezoelectric substrate (6) made of a lithium niobate material having the Euler angles (?, ?, ?), an electrode (7) disposed on the piezoelectric substrate (6) for exciting a major acoustic wave of a wavelength ?, and a protective layer (8) disposed on the piezoelectric substrate (6) to cover the electrode (7). The protective layer (8) has a thickness greater than 0.27?. The Euler angles satisfy ?100°????60°; 1.193??2°???1.193?+2°; and either ???2??3° or ?2?+3°??.

Abstract: A surface acoustic wave resonator includes a piezoelectric substrate, a first surface acoustic wave resonator having a comb electrode provided on the piezoelectric substrate, and a second surface acoustic wave resonator having a comb electrode provided on the piezoelectric substrate. The first surface acoustic wave resonator and the second surface acoustic wave resonator are apodized and connected in parallel.

Abstract: A surface acoustic wave device includes a substrate including lithium niobate; a IDT being provided on an upper surface of the substrate and including a plurality of electrode fingers; and a protective film covering the IDT and having an uneven shape on an upper surface thereof. When a pitch width of one pitch of the IDT is p, a width of one of the electrode fingers is p1, a width between the electrode fingers is p2, and a thickness of the IDT is h, following relations are satisfied, p1+p2=p, and h/(2×p)?4.5%. With this configuration, an appropriate reflection characteristic is realized, and the surface acoustic wave device having excellent temperature coefficient of frequency and electrical characteristic can be obtained.

Abstract: An acoustic boundary wave device includes a piezoelectric body, an IDT layer formed on the piezoelectric body, a pad electrode layer formed on the piezoelectric body and connected to the IDT layer, a first dielectric layer formed on the piezoelectric body and covering at least a part of the IDT electrode layer, and a second dielectric layer formed on the piezoelectric body, covering the first dielectric layer, and having an opening through which at least a part of a top face of the pad electrode layer is exposed. The metal forming lateral faces of the pad electrode layer diffuses more readily into the first dielectric layer than into the second dielectric layer. The second dielectric layer covers the lateral faces of the pad electrode layer and prevents the first dielectric layer from touching the lateral faces of the pad electrode layer.

Abstract: An acoustic wave device includes an interdigital transducer (IDT) electrode and a separate electrode facing the IDT electrode. The IDT electrode includes first and second comb-shaped electrode facing each other. The first comb-shaped electrode includes a first bus bar, first interdigitated electrode fingers, and first dummy electrode fingers. The second comb-shaped electrode includes a second bus bar second interdigitated electrode fingers interdigitated with the first interdigitated electrode fingers, second dummy electrode fingers facing the first interdigitated electrode fingers, weighted parts, and a non-weighted part. The weighted parts have electrodes at spaces between the second interdigitated electrode fingers and the second dummy electrode fingers. In the non-weighted part, there is no electrode at a space out of the spaces which is closest to the separate electrode in the non-interdigitated region.

Abstract: An elastic wave element includes a piezoelectric substrate, an interdigital electrode provided on the piezoelectric substrate, a silicon oxide film covering the interdigital electrode, and a silicon nitride oxide film provided on the silicon oxide film. A film thickness H of the silicon oxide film and a wave length ? of an elastic wave propagating through the piezoelectric substrate satisfies a relation of H/??0.15. The elastic wave element reduces fluctuation of propagation characteristics of elastic waves, and has high reliability.