Abstract: A nitride semiconductor ultraviolet light-emitting element is provided. The element includes a light-emitting element with n-type, active, and p-type layers stacked vertically and made of AlGaN-based wurtzite structured semiconductors. The active layer has a quantum-well structure and each layer is epitaxially grown having a surface on which multi-step terraces parallel to the (0001) plane are formed. The n-type layer has a stratiform regions with locally lower AlN mole fraction which is inclined with respect to an upper surface of the n-type layer. The p-type layer has a lowermost electron blocking layer and an uppermost contact layer. Each semiconductor layer in the active layer and the electron blocking layer have inclined regions with respect to the (0001) plane connecting adjacent terraces of the multi-step terraces, and terrace regions other than inclined regions. An AlN mole fraction of the terrace regions in the electron blocking layer is between 69% and 89%, inclusive.

Abstract: A nitride semiconductor ultraviolet light-emitting element is provided. The element includes a light-emitting element structure part with an n-type layer, an active layer, and a p-type layer stacked vertically, which are made of AlGaN-based semiconductors with wurtzite structure. The n-type layer has an n-type AlGaN-based semiconductor, the active layer has well layers including an AlGaN based semiconductor, and the p-type layer has a p-type AlGaN-based semiconductor. Each semiconductor layer in the n-type and the active layers is an epitaxially grown layer having a surface on which multi-step terraces parallel to the (0001) plane are formed. The n-type layer has first Ga-rich regions which include n-type AlGaN regions in which an AlGaN composition ratio is an integer ratio of Al2Ga1N3. The well layer includes a second Ga-rich region, which includes an AlGaN region in which an AlGaN composition ratio is an integer ratio of Al1Ga1N2 or Al5Ga7N12.

Abstract: A nitride semiconductor ultraviolet light-emitting element is provided. The element includes a light-emitting element structure part with an n-type layer, an active layer, and a p-type layer stacked vertically, which are made of AlGaN-based semiconductors with wurtzite structure. The n-type layer has an n-type AlGaN-based semiconductor, the active layer has well layers including an AlGaN based semiconductor, and the p-type layer has a p-type AlGaN-based semiconductor. Each semiconductor layer in the n-type and the active layers is an epitaxially grown layer having a surface on which multi-step terraces parallel to the (0001) plane are formed. The n-type layer has first Ga-rich regions which include n-type AlGaN regions in which an AlGaN composition ratio is an integer ratio of Al7Ga5N12, and each extending direction of the stratiform regions is inclined with respect to the upper surface of the n-type layer.

Abstract: A nitride semiconductor ultraviolet light-emitting element is provided. The element includes a light-emitting element structure part with an n-type layer, an active layer, and a p-type layer stacked vertically, which are made of AlGaN-based semiconductors with wurtzite structure. The n-type layer has an n-type AlGaN-based semiconductor, the active layer has well layers including an AlGaN based semiconductor, and the p-type layer has a p-type AlGaN-based semiconductor. Each semiconductor layer in the n-type and the active layers is an epitaxially grown layer having a surface on which multi-step terraces parallel to the (0001) plane are formed. The n-type layer has first Ga-rich regions which include n-type AlGaN regions in which an AlGaN composition ratio is an integer ratio of Al1Ga1N2. The well layer includes a second Ga-rich region, which includes an AlGaN region in which an AlGaN composition ratio is an integer ratio of Al1Ga2N3.

Abstract: The present disclosure provides a plating apparatus that can determine an acceleration at the time of an inappropriate deceleration of a transfer device that may cause contact between a substrate holder and a processing tank, a control method for a plating apparatus, and a storage medium storing a program.

Abstract: A nitride semiconductor ultraviolet light-emitting element is provided. The element includes a light-emitting element structure part with an n-type layer, an active layer, and a p-type layer stacked vertically, which are made of AlGaN-based semiconductors with wurtzite structure. The n-type layer has an n-type AlGaN-based semiconductor, the active layer has well layers including an AlGaN based semiconductor, and the p-type layer has a p-type AlGaN-based semiconductor. Each semiconductor layer in the n-type and the active layers is an epitaxially grown layer having a surface on which multi-step terraces parallel to the (0001) plane are formed. The n-type layer has first Ga-rich regions which include n-type AlGaN regions in which an AlGaN composition ratio is an integer ratio of Al1Ga1N2. The well layer includes a second Ga-rich region, which includes an AlGaN region in which an AlGaN composition ratio is an integer ratio of Al1Ga2N3.

Abstract: Provided is a technique configured to cause a first actual operation to be started in a short time when the actual operation of a substrate processing component group is performed a plurality of times. A substrate processing system 10 includes a substrate processing apparatus 11 having a substrate processing component group 20 and a controller 40. The substrate processing component group 20 is configured to perform a test operation and an actual operation. The substrate processing component group 20 has a first substrate processing component and a second substrate processing component. When the actual operation is performed a plurality of times, the controller 40 causes the first substrate processing component to perform the test operation and causes the actual operation of the first substrate processing component to be started after completion of the test operation of the first substrate processing component.

Abstract: A component supply device includes a transport path that guides a component connected body from a component insertion port on an upstream side in a component feeding direction to a component supply position on a downstream side, the component connected body including a plurality of axial components arranged and connected at a predetermined pitch, the plurality of axial components each having a lead, and a feed mechanism that pitch-feeds the component connected body along the transport path to the downstream side. The feed mechanism includes a feed member which has a plurality of feed hooks disposed at the predetermined pitch along the component feeding direction, a rotating shaft which is connected to one end side of the feed member, and a moving mechanism which is connected to the feed member through the rotating shaft and reciprocates the rotating shaft along the component feeding direction.

Abstract: Provided is a technique configured to cause a first actual operation to be started in a short time when the actual operation of a substrate processing component group is performed a plurality of times. A substrate processing system 10 includes a substrate processing apparatus 11 having a substrate processing component group 20 and a controller 40. The substrate processing component group 20 is configured to perform a test operation and an actual operation. The substrate processing component group 20 has a first substrate processing component and a second substrate processing component. When the actual operation is performed a plurality of times, the controller 40 causes the first substrate processing component to perform the test operation and causes the actual operation of the first substrate processing component to be started after completion of the test operation of the first substrate processing component.

Abstract: To improve a wall plug efficiency in a nitride semiconductor light-emitting element for extracting ultraviolet light emitted from an active layer toward an n-type nitride semiconductor layer side to outside of the element.

Abstract: A method of mounting a component includes an approaching step of causing the pair of clamping members to approach each other with the first body of the first component disposed between the paired clamping members, a clamping step of clamping the first component, and a mounting step of moving the pair of clamping members clamping the first component to the substrate and pressing out the first component clamped by the pair of clamping members with the pusher for mounting on the substrate, when the clamping members mount the first component on the substrate.

Abstract: A light-emitting device 1 comprises a base 30, a nitride semiconductor light-emitting element 10 flip-chip mounted on the base 30, and an amorphous fluororesin sealing the nitride semiconductor light-emitting element 10. The light-emitting device 1 comprises a deformation-prevention layer 60 for preventing a shape change of an amorphous fluororesin by heat treatment after shipment of the light-emitting device 1, and the deformation-prevention layer 60 is formed of a layer in which a thermosetting resin or an ultraviolet curing resin is cured, and the cured layer directly covers the surface of the amorphous fluororesin.

Abstract: The nitride semiconductor light-emitting element comprises a light-emitting element structure portion having a plurality of nitride semiconductor layers including at least an n-type layer, an active layer and a p-type layer. The active layer has a quantum well structure comprising at least one well layer composed of a GaN-based semiconductor. In the well layer, the shortest distance between a first surface on the n-type layer side and a second surface on the p-type layer side varies in an orthogonal plane to the layering direction of the nitride semiconductor layers, and the peak emission wavelength of light emitted from the light-emitting element structure portion is shorter than 354 nm.

Abstract: The ultraviolet light-emitting device includes a base, a nitride semiconductor ultraviolet light-emitting element flip-chip mounted on the base, and a lens for sealing a nitride semiconductor ultraviolet light-emitting element to focus or diffuse light emitted from the nitride semiconductor ultraviolet light-emitting device. The lens is composed of an amorphous fluororesin in which a structural unit of a polymer or copolymer has a fluorine-containing aliphatic cyclic structure and a terminal functional group is a perfluoroalkyl group, and a density of the amorphous fluororesin is higher than 2.11 g/cm3.

Abstract: A template includes a sapphire substrate with a (0001) plane or a plane inclined by a predetermined angle with respect to the (0001) plane as a main surface, and an AlN layer composed of AlN crystals having an epitaxial crystal orientation relationship with the main surface directly formed on the main surface of the sapphire substrate. In the template, an average particle diameter of the AlN crystals of the AlN layer at a thickness of 20 nm from the main surface is 100 nm or less.

Abstract: A first vital signs information detecting sensor and a second vital signs information sensor are attached to a living body. The first vital signs information detecting sensor detects over time first vital signs information and first motion information of the living body. The first vital signs information and the first motion information are transmitted from the first vital signs information detecting sensor to a receiver. The second vital signs information detecting sensor detects over time second vital signs information and second motion information of the living body. The second vital signs information and the second motion information are transmitted from the second vital signs information detecting sensor to the receiver. The first vital signs information and the second vital signs information are displayed on a display of the receiver in a synchronized state, on the basis of the first motion information and the second motion information.

Abstract: A component mounting device configured to mount an axial component on a substrate, comprising: a movable forming-die; a fixed forming-die; a mounting head; and a distance adjustment portion, wherein the distance adjustment portion makes an adjustment such that when the movable forming-die delivers the axial component to the mounting head the distance between the claws is larger than a distance of the fixed forming-die.

Abstract: To improve a wall plug efficiency in a nitride semiconductor light-emitting element for extracting ultraviolet light emitted from an active layer toward an n-type nitride semiconductor layer side to outside of the element.

Abstract: A template includes a sapphire substrate with a (0001) plane or a plane inclined by a predetermined angle with respect to the (0001) plane as a main surface, and an AlN layer composed of AlN crystals having an epitaxial crystal orientation relationship with the main surface directly formed on the main surface of the sapphire substrate. In the template, an average particle diameter of the AlN crystals of the AlN layer at a thickness of 20 nm from the main surface is 100 nm or less.

Abstract: The nitride semiconductor light-emitting element comprises a light-emitting element structure portion having a plurality of nitride semiconductor layers including at least an n-type layer, an active layer and a p-type layer. The active layer has a quantum well structure comprising at least one well layer composed of a GaN-based semiconductor. In the well layer, the shortest distance between a first surface on the n-type layer side and a second surface on the p-type layer side varies in an orthogonal plane to the layering direction of the nitride semiconductor layers, and the peak emission wavelength of light emitted from the light-emitting element structure portion is shorter than 354 nm.