Abstract: A fluoropolymer of a monomer (I) represented by the general formula (I), wherein a content of a polymerization unit (I) derived from the monomer (I) is 50% by mass or more based on all polymerization units constituting the fluoropolymer: CX2?CX—O—Rf—SO3M??General formula (I) wherein X is independently F or CF3; Rf is a fluorine-containing alkylene group having 1 to 40 carbon atoms or a fluorine-containing alkylene group having 2 to 100 carbon atoms and having an ether bond or a keto group; and M is —H, a metal atom, —NR74, imidazolium optionally having a substituent, pyridinium optionally having a substituent, or phosphonium optionally having a substituent, wherein R7 is H or an organic group. Also disclosed are an aqueous solution and coating composition containing the fluoropolymer.

Abstract: A heat-ray-transmission-controllable, light-transmissive base material is provided that includes a light-transmissive insolation-cutting unit configured to control transmission of light in at least a part of wavelength regions among wavelength regions of visible light and near-infrared light; and a transparent conductive oxide layer disposed over the light-transmissive insolation-cutting unit, containing a transparent conductive oxide.

Abstract: A radio wave absorber 1a includes a resistive layer 10, a reflector 30, and a dielectric layer 20. The resistive layer 10 includes multilayer carbon nanotubes 11. Moreover, the resistive layer 10 has a specific resistance of 1.5 ?·cm or less. The reflector 30 reflects a radio wave. The dielectric layer 20 is disposed between the resistive layer and the reflector in a thickness direction of the resistive layer 10.

Abstract: A heater (1a) includes a support (10) made of an organic polymer and having a sheet shape, a heating element (20), and at least one pair of power supply electrodes (30) in contact with the heating element (20). The heating element (20) is a transparent conductive film made of a polycrystalline material containing indium oxide as a main component. In the heater (1a), the heating element (20) has a specific resistance of 1.4×10?4 ?·cm to 3×10?4 ?·cm. The heating element (20) has a thickness of more than 20 nm and not more than 100 nm.

Abstract: An impedance matching film 10a has a plurality of openings 11. The plurality of openings 11 are formed at equal intervals in a specific direction along main surfaces 10f of the impedance matching film 10a. The impedance matching film 10a has a sheet resistance of 300 to 700?/?. A size G of each opening 11 in the specific direction is 50 ?m or more and 1000 ?m or less. In the impedance matching film 10a, a cross-sectional resistance value Rs is 1M?/m or more. The cross-sectional resistance value Rs is determined by dividing a specific resistance of a material forming the impedance matching film 10a by a product of a thickness of the impedance matching film 10a and a distance between the nearest openings 11.

Abstract: Provided is a wiring circuit board that includes a first insulating layer, a conductive pattern disposed on the first insulating layer, and a second protective layer disposed between the first insulating layer and protecting the conductive pattern. The second protective layer consists of a metal oxide.

Abstract: A radio wave absorber includes a resistive layer, an electroconductive layer, and a dielectric layer. The resistive layer has a first main surface with a plurality of first openings formed at equal intervals. The electroconductive layer has a second main surface with a plurality of second openings formed at equal intervals. The dielectric layer is disposed between the resistive layer and the electroconductive layer. In the radio wave absorber, a value obtained by dividing a larger value out of a first ratio and a second ratio by a smaller value out of the first ratio and the second ratio is 1.3 or more. The first ratio is a ratio (GR/WR) of a size GR of the first opening to a distance WR between the first openings. The second ratio is a ratio (GC/WC) of a size GC of the second opening to a distance WC between the second openings.

Abstract: Provided is a wiring circuit board that includes a first insulating layer, a conductive pattern disposed on the first insulating layer, a second insulating layer disposed on the first insulating layer and covering the conductive pattern, and a third protective layer disposed between the conductive pattern and the second insulating layer and protecting the conductive pattern. The third protective layer consists of a metal oxide.

Abstract: An impedance matching film 10 includes a plurality of domains 11. Each of the domains 11 has a plurality of openings 12 having different shapes. The pluralities of openings 12 are periodically arranged in a specific direction along main surfaces 10f of the impedance matching film 10. Each of sizes of the domains 11 in the specific direction is 50 ?m or more.

Abstract: Provided is a method of manufacturing a semiconductor device capable of suppressing variation in thickness of oxide films among a plurality of SiC wafers. Forming first inorganic films on lower surfaces of a plurality of SiC wafer, and then performing etching of the plurality of SiC wafers so that 750 nm or more of the first inorganic film is left in thickness, and then forming oxide films on upper surfaces of the plurality of SiC wafers by performing thermal oxidation treatment in a state in which a first SiC wafer of the plurality of SiC wafers is placed directly below any one of at least one wafer, including at least one of a dummy wafer and a monitor wafer, and a second SiC wafer of the plurality of SiC wafers is placed directly below a third SiC wafer of the plurality of SiC wafers.

Abstract: An impedance matching film 10a includes a plurality of openings 11 regularly arranged along a principal surface 10f of the impedance matching film 10a. In the impedance matching film 10a, a value ?/t obtained by dividing a specific resistance ? of a material of the impedance matching film 10a by a thickness t of the impedance matching film 10a is 1 to 300 ?/?.

Abstract: An impedance matching film 10 includes a metallic element and a non-metallic element. The impedance matching film 10 has a thickness of 10 to 200 nm. The impedance matching film 10 has a sheet resistance of 200 ?/? or more. In the impedance matching film 10, the content of an oxygen atom is less than 50% in terms of the number of atoms.

Abstract: A heater (1a) includes a substrate (10), a heating element (20) that is a transparent conductive film (20), an intermediate layer (30), and at least a pair of power supply electrodes (40). The intermediate layer (30) is disposed between the substrate (10) and the transparent conductive film (20), and has a first principal surface (31) positioned closer to the transparent conductive film (20) than the substrate (10). The pair of power supply electrodes (40) are in contact with the transparent conductive film (20). The intermediate layer (30) contains an organic polymer (32) forming a cured product and particles (34) of silica or a metal oxide dispersed in the cured product. The transparent conductive film (20) has a surface having an arithmetic average roughness Ra, specified in JIS B 0601:2013, of 7.0 nm or less.

Abstract: The object of a silicon carbide semiconductor device according to the present disclosure is to prevent fluctuations in threshold voltage and prevent cracks in a barrier metal. A silicon carbide semiconductor device includes: a silicon carbide substrate; a semiconductor layer formed on the silicon carbide substrate; a gate electrode facing the semiconductor layer through a gate insulating film; an interlayer insulating film covering the gate electrode; a barrier metal formed on the interlayer insulating film; and a top electrode covering the barrier metal, wherein the barrier metal has a two-layer structure of a barrier metal and a barrier metal, and the barrier metal closer to the interlayer insulating film is made of a same metallic material as the barrier metal, the barrier metal being thinner than the barrier metal.

Abstract: An impedance matching film 10 includes a mixture containing indium oxide and tin oxide and being a main component of the impedance matching film, the mixture having an amorphous structure. The impedance matching film 10 for impedance matching has a Hall mobility of 5 cm2/(V·s) or more. The impedance matching film 10 has a thickness of 16 nm or more and less than 100 nm.

Abstract: A heater (1a) includes a substrate (10), a transparent conductive oxide layer (20), a first power supply electrode (31), and a second power supply electrode (32). The ratio of the sum of the electric resistance of the first power supply electrode (31) in a particular direction and the electric resistance of the second power supply electrode (32) in the particular direction to the electric resistance of the transparent conductive oxide layer (20) between the first power supply electrode (31) and the second power supply electrode (32) is 45% or less. The transparent conductive oxide layer (20) has a thickness from 20 to 250 nm and is formed of a material having a specific resistance from 1.4×10?4 to 3.0×10?4 ?·cm.

Abstract: A heat-ray-transmission-controllable, light-transmissive base material is provided that includes a light-transmissive insolation-cutting unit configured to control transmission of light in at least a part of wavelength regions among wavelength regions of visible light and near-infrared light; and a transparent conductive oxide layer disposed over the light-transmissive insolation-cutting unit, containing a transparent conductive oxide.

Abstract: Provided is a semiconductor device having high heat conductivity and high productivity. A semiconductor device includes an insulating substrate, a semiconductor element, a die-bond material, a joining material, and a cooler. The insulating substrate has an insulating ceramic, a first conductive plates disposed on one surface of the insulating ceramic, and a second conductive plate disposed on another surface of the insulating ceramic. The semiconductor element is disposed on the first conductive plate through the die-bond material. The die-bond material contains sintered metal. The semiconductor element has a bending strength degree of 700 MPa or more, and has a thickness of 0.05 mm or more and 0.1 mm or less. The cooler is joined to the second conductive plate through the joining material.

Abstract: A heater (1a) includes a support (10) made of an organic polymer and having a sheet shape, a heating element (20), and at least one pair of power supply electrodes (30) in contact with the heating element (20). The heating element (20) is a transparent conductive film made of a polycrystalline material containing indium oxide as a main component. In the heater (1a), the heating element (20) has a specific resistance of 1.4×10?4 ?·cm to 3×10?4 ?·cm. The heating element (20) has a thickness of more than 20 nm and not more than 100 nm.

Abstract: An occurrence of a noise in a light receiver is suppressed, and an accuracy of measuring a film thickness is improved. A film thickness measuring apparatus includes: a stage being in contact with only an end portion of a substrate; a reflection suppressing unit located separately from the stage in a region surrounded by the stage; a light source; and a light receiver which a first light made up of light, which has been emitted from the light source, reflected on an upper surface of the measured film and a second light reflected on an upper surface of the substrate enter. The reflection suppressing unit is located separately from a lower surface of the substrate exposed to atmosphere, and suppresses a reflection of light, which enters the reflection suppressing unit from the light source, to the light receiver.