Abstract: An occurrence of a noise in a light receiver is suppressed, and an accuracy of measuring a film thickness is improved. A film thickness measuring apparatus includes: a stage being in contact with only an end portion of a substrate; a reflection suppressing unit located separately from the stage in a region surrounded by the stage; a light source; and a light receiver which a first light made up of light, which has been emitted from the light source, reflected on an upper surface of the measured film and a second light reflected on an upper surface of the substrate enter. The reflection suppressing unit is located separately from a lower surface of the substrate exposed to atmosphere, and suppresses a reflection of light, which enters the reflection suppressing unit from the light source, to the light receiver.

Abstract: An electrode is disposed on a semiconductor layer. A polyimide layer has an opening disposed on the electrode, covers the edge of the electrode, and extends onto the electrode. A copper layer is disposed on the electrode within the opening, and located away from the polyimide layer on the electrode. A copper wire has one end joined on the copper layer.

Abstract: A heat-ray-reflective, light-transmissive base material is provided that includes a light-transmissive base material; a hard-coat layer disposed over one surface of the light-transmissive base material; and a transparent conductive oxide layer containing a transparent conductive oxide, disposed over the hard-coat layer.

Abstract: An occurrence of a noise in a light receiver is suppressed, and an accuracy of measuring a film thickness is improved. A film thickness measuring apparatus includes: a stage being in contact with only an end portion of a substrate; a reflection suppressing unit located separately from the stage in a region surrounded by the stage; a light source; and a light receiver which a first light made up of light, which has been emitted from the light source, reflected on an upper surface of the measured film and a second light reflected on an upper surface of the substrate enter. The reflection suppressing unit is located separately from a lower surface of the substrate exposed to atmosphere, and suppresses a reflection of light, which enters the reflection suppressing unit from the light source, to the light receiver.

Abstract: An electrode is disposed on a semiconductor layer. A polyimide layer has an opening disposed on the electrode, covers the edge of the electrode, and extends onto the electrode. A copper layer is disposed on the electrode within the opening, and located away from the polyimide layer on the electrode. A copper wire has one end joined on the copper layer.

Abstract: Provided is a semiconductor device having high heat conductivity and high productivity. A semiconductor device includes an insulating substrate, a semiconductor element, a die-bond material, a joining material, and a cooler. The insulating substrate has an insulating ceramic, a first conductive plates disposed on one surface of the insulating ceramic, and a second conductive plate disposed on another surface of the insulating ceramic. The semiconductor element is disposed on the first conductive plate through the die-bond material. The die-bond material contains sintered metal. The semiconductor element has a bending strength degree of 700 MPa or more, and has a thickness of 0.05 mm or more and 0.1 mm or less. The cooler is joined to the second conductive plate through the joining material.

Abstract: Infrared reflecting film includes, on a transparent film substrate, a metal oxide layer, an infrared reflecting layer mainly made of silver, and a light absorptive metal layer, in this order. No metal layer is disposed between the transparent film substrate and the infrared reflecting layer. The metal oxide layer is preferably formed of a composite metal oxide including zinc oxide and tin oxide. The light absorptive metal layer has a thickness of 2 nm to 10 nm and includes at least one selected from the group consisting of nickel, chromium, niobium, tantalum, and titanium.

Abstract: An electronic device according to an aspect includes an imaging device, a sensor, a detector, and at least one controller. The sensor detects information for determining whether the device is in a predetermined state. The detector detects a predetermined operation. The at least one controller performs first control or second control while the imaging device is operating, the first control being for changing function settings relating to various operations of the device into settings corresponding to the predetermined state based on a determination result that the device is in the predetermined state the second control being for changing the function settings into the settings corresponding to the predetermined state in response to reception of the predetermined operation. The at least one controller makes notification corresponding to the first control along with execution of the first control and notification corresponding to the second control along with execution of the second control.

Abstract: A method of manufacturing a silicon carbide semiconductor device is provided. The method suppresses the increase in the number of manufacturing steps and is capable of suppressing the degradation of ohmic characteristics of an alloy layer with respect to a semiconductor substrate. The method includes a step of forming a metal layer made of a first metal on a semiconductor substrate made of silicon carbide; a step of forming a metal nitride film obtained by nitriding a second metal on the metal layer; a step of directing a laser light through the metal nitride film to form a layer of an alloy of silicon carbide in the semiconductor substrate and the first metal in the metal layer; and a step of forming an electrode on the metal nitride film.

Abstract: In one implementation, an electronic device includes: a display; a sensor configured to measure information to be used for determining whether the electronic device is underwater; and at least one processor configured to determine, based on results of the measurement by the sensor, whether the electronic device has fallen into the water. Upon determining that the electronic device has fallen into the water, the at least one processor displays maintenance operation information for guiding a user to maintenance operations for the electronic device on the display. The electronic device is capable of, when the electronic device has fallen into the water, guiding a user so as to prompt the user to perform self-maintenance on the electronic device so that a breakdown or the like of the electronic device due to moisture left in the electronic device can be prevented.

Abstract: Infrared reflecting substrate includes, on a transparent film base, an infrared reflecting layer mainly made of silver and a light absorptive metal layer in this order. The light absorptive metal layer has a thickness of 15 nm or less, and a transparent protective layer has a thickness of 10 nm to 120 nm. The distance between the light absorptive metal layer and the transparent protective layer is 25 nm or less.

Abstract: Infrared reflecting film includes, on a transparent film substrate, a metal oxide layer, an infrared reflecting layer mainly made of silver, and a light absorptive metal layer, in this order. No metal layer is disposed between the transparent film substrate and the infrared reflecting layer. The metal oxide layer is preferably formed of a composite metal oxide including zinc oxide and tin oxide. The light absorptive metal layer has a thickness of 2 nm to 10 nm and includes at least one selected from the group consisting of nickel, chromium, niobium, tantalum, and titanium.

Abstract: A method for manufacturing a semiconductor device, includes: (a) providing a SiC epitaxial substrate in which on a SiC support substrate, a SiC epitaxial growth layer having an impurity concentration equal to or less than 1/10,000 of that of the SiC support substrate and having a thickness of 50 ?m or more is disposed; (b) forming an impurity region, which forms a semiconductor element, on a first main surface of the SiC epitaxial substrate by selectively injecting impurity ions; (c) forming an ion implantation region, which controls warpage of the SiC epitaxial substrate, on a second main surface of the SiC epitaxial substrate by injecting predetermined ions; and (d) heating the SiC epitaxial substrate after (b) and (c).

Abstract: A wireless communication system includes an information terminal and a communication device. Communication between the information terminal and the communication device is performed by a first wireless communication through an access point or by a second wireless communication directly between the information terminal and the communication device without passing through the access point. The wireless communication system determines whether the information terminal can be connected to the communication device through the first wireless communication with the information terminal set as the access point. The system transmits an instruction signal for changing the access point to the communication device through the second wireless communication when it is determined that the information terminal cannot be connected to the communication device.

Abstract: A method for manufacturing a semiconductor device, includes: (a) providing a SiC epitaxial substrate in which on a SiC support substrate, a SiC epitaxial growth layer having an impurity concentration equal to or less than 1/10,000 of that of the SiC support substrate and having a thickness of 50 ?m or more is disposed; (b) forming an impurity region, which forms a semiconductor element, on a first main surface of the SiC epitaxial substrate by selectively injecting impurity ions; (c) forming an ion implantation region, which controls warpage of the SiC epitaxial substrate, on a second main surface of the SiC epitaxial substrate by injecting predetermined ions; and (d) heating the SiC epitaxial substrate after (b) and (c).

Abstract: A method of manufacturing a silicon carbide semiconductor device is provided. The method suppresses the increase in the number of manufacturing steps and is capable of suppressing the degradation of ohmic characteristics of an alloy layer with respect to a semiconductor substrate. The method includes a step of forming a metal layer made of a first metal on a semiconductor substrate made of silicon carbide; a step of forming a metal nitride film obtained by nitriding a second metal on the metal layer; a step of directing a laser light through the metal nitride film to form a layer of an alloy of silicon carbide in the semiconductor substrate and the first metal in the metal layer; and a step of forming an electrode on the metal nitride film.

Abstract: An electronic device according to an aspect includes an imaging device, a sensor, a detector, and at least one controller. The sensor detects information for determining whether the device is in a predetermined state. The detector detects a predetermined operation. The at least one controller performs first control or second control while the imaging device is operating, the first control being for changing function settings relating to various operations of the device into settings corresponding to the predetermined state based on a determination result that the device is in the predetermined state the second control being for changing the function settings into the settings corresponding to the predetermined state in response to reception of the predetermined operation. The at least one controller makes notification corresponding to the first control along with execution of the first control and notification corresponding to the second control along with execution of the second control.

Abstract: In one implementation, an electronic device includes: a display; a sensor configured to measure information to be used for determining whether the electronic device is underwater; and at least one processor configured to determine, based on results of the measurement by the sensor, whether the electronic device has fallen into the water. Upon determining that the electronic device has fallen into the water, the at least one processor displays maintenance operation information for guiding a user to maintenance operations for the electronic device on the display. The electronic device is capable of, when the electronic device has fallen into the water, guiding a user so as to prompt the user to perform self-maintenance on the electronic device so that a breakdown or the like of the electronic device due to moisture left in the electronic device can be prevented.

Abstract: A wire discharge machining apparatus including a plurality of main guide rollers disposed in parallel at intervals, one wire that is wound between the guide rollers while being spaced apart from one another at a fixed pitch to form cutting wire sections between a pair of guide rollers and travels according to the rotation of the main guide rollers, and power feed terminal units that feed electric power to wires of the cutting wire sections. The wire discharge machining apparatus performs cutting of a work piece with the cutting wire sections, suspends cut-out of semiconductor wafers from the work piece in a state in which a part of the semiconductor wafers is connected to the work piece, brings the wires of the cutting wire sections close to one cut surfaces, and scans the cut surfaces in a discharge-machined state.

Abstract: A vehicle terminal apparatus has a connection monitoring unit for monitoring a disconnection of a communication link between a wireless communication device and a portable terminal, considering an abnormal disconnection of the communication link as a link loss, considering a disconnection of the communication link by a disconnection process by the wireless communication device as a first disconnection, and considering a disconnection of the communication link by a disconnection process, by the portable terminal as a second disconnection; and a connection condition determination unit for determining a wireless connection condition of the wireless communication device based on a disconnection reason that accounts for a reason for disconnection and a pre-disconnection call condition that is a call condition of the portable terminal immediately before the disconnection when the disconnection of the communication link is detected by the connection monitoring unit.