Abstract: A power conversion device includes a diode built-in transistor configured to include a transistor configured to be driven by a drive signal input into a gate, a diode configured to be connected in parallel with transistor, and have a forward direction from an emitter to a collector of the transistor, and sense diode configured to detect a current flowing in the diode, and have a cathode connected with the collector of the transistor; voltage generation part configured to generate, in a case where the diode does not conduct electricity, voltage between an anode of the diode and an anode of the sense diode, the voltage having a predetermined or greater difference with respect to a case where the diode conducts electricity; and determination part configured to determine whether the diode conducts electricity, based on the voltage between the anode of the diode and the anode of the sense diode.

Abstract: An inspection apparatus for inspecting output signal of a semiconductor device is provided with a monitor device configured to sense a signal on the monitor line and a plurality of inspection circuits connected to the monitor line. Each inspection circuit is provided with a semiconductor device support allowing a semiconductor device to be set thereon and including a signal terminal to which a signal is input from the set semiconductor device, a first resistor connected between the signal terminal and the monitor line, a selector terminal, and a first diode connected between the signal terminal and the selector terminal so that a cathode of the first diode is connected to a selector terminal side.

Abstract: A current control circuit includes a first drive switching device, a gate power source, a control switching device, a first resistor, an operational amplifier, and a switching circuit. The operational amplifier includes: an output terminal connected to the control switching device; a non-inverting input terminal; and an inverting input terminal configured to receive a reference potential. The switching circuit is configured to: input a value based on a potential difference between both ends of the first resistor to the non-inverting input terminal when a current flowing through the first drive switching device is equal to or smaller than a threshold level; and input a value based on a potential on a current pathway between the control switching device and the first drive switching device to the non-inverting input terminal when the current flowing through the first drive switching device is greater than the threshold level.

Abstract: There is provided an electronic device comprising: a plurality of switching elements connected to a power supply; a plurality of specific information storage units provided for the corresponding switching elements and configured to store specific information of respective corresponding switching elements; a processing unit configured to control the switching elements; and a communication line disposed between the specific information storage units and the processing unit, through which the specific information of the respective switching elements is sent from the specific information storage units to the processing unit.

Abstract: A semiconductor apparatus includes a switching element configured to include a gate electrode, a first main electrode, a second main electrode, a sense electrode to output a sense current smaller than a principal current depending on the principal current flowing in the first main electrode, and to turn off when a control voltage being applied between the gate electrode and the first main electrode is reduced; a sense diode configured to include an anode connected with the sense electrode, and a cathode connected with the second main electrode; and a connection circuit configured to connect the gate electrode with the sense electrode when the switching element turns off.

Abstract: There is provided a semiconductor apparatus comprising: a switching element including a main element and a sense element; a main diode whose cathode is connected to a first main electrode of the main element and whose anode is connected to a second main electrode of the main element; a sense diode whose cathode is connected to a first main electrode of the sense element and whose anode is connected to a second main electrode of the sense element; and a deterioration detection circuit configured to apply a voltage to a sense node, and detects a deterioration of the switching element or the main diode based on a forward current flowing in the sense diode, being detected while the voltage is applied, the voltage being applied during an OFF period of switching element, wherein the sense diode is disposed for detecting current flowing through the main diode.

Abstract: A drive circuit includes a gate drive node; a power source node; an output transistor configured to be connected between the gate drive node and the power source node, and to flow a current into the gate drive node; an input transistor configured to form a current mirror with the output transistor, and to have a smaller size than the output transistor; an operational amplifier configured to output a control voltage depending on a potential difference between a voltage received as input depending on a voltage of the gate drive node, and a constant voltage lower than a voltage of the power source node; a constant current source configured to generate a constant current; and a control transistor configured to control a current flowing in the input transistor to be less than or equal to the constant current, depending on the control voltage.

Abstract: A semiconductor apparatus includes a switching device; a first reflux diode connected in reverse parallel with the switching device; a current path connected in parallel with the first reflux diode; a second reflux diode inserted into the current path in series; and a temperature detection part configured to detect a temperature based on a differential voltage between a forward voltage of the first reflux diode and a forward voltage of the second reflux diode. A current density of the first reflux diode and a current density of the second reflux diode are different from one another.

Abstract: A semiconductor drive apparatus includes a first control unit configured, when an overcurrent is detected flowing between a first main electrode and a second main electrode of a switching element, to make a gate of the switching element conductive with a predetermined reference potential, to make a control voltage applied between the gate and the first main electrode lower, and to turn off the switching element; a detection unit configured to detect a current generated accompanying charge or discharge of a feedback capacitance between the gate and the second main electrode; and a second control unit configured, when the overcurrent and the current generated accompanying the charge or discharge of the feedback capacitance are detected, to make a resistance between the gate and the reference potential lower.

Abstract: A semiconductor device includes a transistor, a diode, a first detection circuit, a second detection circuit, a calculation circuit, and a determination circuit. The diode is connected in reverse parallel with the transistor. The first detection circuit is configured to detect a change rate of a gate voltage of the transistor with respect to time. The second detection circuit is configured to detect a gate current of the transistor. The calculation circuit is configured to calculate a gate capacitance based on the change rate of the gate voltage with respect to time, and the gate current. The determination circuit is configured to determine, based on a determination result of the gate capacitance when a charge is injected to a gate of the transistor, whether a current flows to the diode or to the transistor.

Abstract: An inspection apparatus for inspecting output signal of a semiconductor device is provided with a monitor device configured to sense a signal on the monitor line and a plurality of inspection circuits connected to the monitor line. Each inspection circuit is provided with a semiconductor device support allowing a semiconductor device to be set thereon and including a signal terminal to which a signal is input from the set semiconductor device, a first resistor connected between the signal terminal and the monitor line, a selector terminal, and a first diode connected between the signal terminal and the selector terminal so that a cathode of the first diode is connected to a selector terminal side.