Abstract: A hybrid vehicle driving device includes a first planetary gear mechanism, a second planetary gear mechanism, a clutch configured to connect and disconnect a carrier of the first planetary gear mechanism to and from a ring gear of the second planetary gear mechanism, and a brake configured to regulate a rotation of the ring gear of the second planetary gear mechanism by being engaged. The second planetary gear mechanism is of a double pinion type, a sun gear of the first planetary gear mechanism is connected to a first electric rotating machine, a carrier thereof is connected to an engine, and a ring gear thereof is connected to a driving wheel, respectively, and a sun gear of the second planetary gear mechanism is connected to a second electric rotating machine, and a carrier thereof is connected to the driving wheel, respectively.

Abstract: A hybrid vehicle driving apparatus includes: a first planetary gear mechanism; a second planetary gear mechanism; a clutch that connects and disconnects a carrier of the first planetary gear mechanism to and from a carrier of the second planetary gear mechanism; and a brake that regulates the rotation of the carrier of the second planetary gear mechanism by engaging, in which a sun gear, the carrier, and a ring gear of the first planetary gear mechanism are respectively connected to a first rotating electric machine, an engine, and a driving wheel, and a sun gear and a ring gear of the second planetary gear mechanism are respectively connected to a second rotating electric machine and the driving wheel.

Abstract: A differential device has a differential case that houses a gear group, and a ring gear that is disposed fitted to the differential case. The differential case and the ring gear are supported rotatably about a drive shaft. The ring gear is made up of a helical gear. The ring gear abuts the differential case in the axial direction of the drive shaft. The ring gear and the differential case are welded at an abutting portion of the ring gear and the differential case in the axial direction of the drive shaft.

Abstract: Disclosed is a parking lock mechanism of a power transmission apparatus which can stably supply lubrication oil to the sliding surface of a parking cam to decrease the sliding resistance of the parking cam. The parking lock mechanism 52 includes a support portion 73 for positioning a sleeve 71 with respect to an extension housing 6, and a first guide rib 74 provided on the support portion 73 for catching oil circulating in a transaxle case 4 to supply the oil to the support portion 73. The sleeve 71 has an upper portion formed with a notch 71c for allowing a parking pawl 62 to be held in abutment with a parking cam 61. The oil caught by the first guide rib 74 is supplied through the support portion 73 and the notch 71c of the sleeve 71 to the sliding surface of the parking cam 61, viz., the sliding surface between the parking pawl 62 and the parking cam 61 and the sliding surface between the parking cam 61 and the sleeve 71.

Abstract: The present invention relates to a method for manufacturing a heterojunction semiconductor device including an AlGaN layer, the method including the steps of (a) forming a dummy electrode in a region where a gate electrode is arranged on the AlGaN layer, (b) depositing a dielectric film on the AlGaN layer by exposing side surfaces of the dummy electrode, using a device having anisotropy, (c) forming an opening in the dielectric film by removing the dummy electrode, and (d) forming the gate electrode that extends from inside the opening onto the dielectric film in a vicinity of the opening.

Abstract: A semiconductor device includes a submount; a semiconductor laser mounted on the submount via solder in a junction-down manner. The semiconductor laser includes a semiconductor substrate, a semiconductor laminated structure containing a p-n junction, on the semiconductor substrate, and an electrode on the semiconductor laminated structure and joined to the submount via the solder. A high-melting-point metal or dielectric film is located between the submount and the semiconductor laminated structure and surrounds the electrode.

Abstract: Disclosed is a parking lock mechanism of a power transmission apparatus which can stably supply lubrication oil to the sliding surface of a parking cam to decrease the sliding resistance of the parking cam. The parking lock mechanism 52 includes a support portion 73 for positioning a sleeve 71 with respect to an extension housing 6, and a first guide rib 74 provided on the support portion 73 for catching oil circulating in a transaxle case 4 to supply the oil to the support portion 73. The sleeve 71 has an upper portion formed with a notch 71c for allowing a parking pawl 62 to be held in abutment with a parking cam 61. The oil caught by the first guide rib 74 is supplied through the support portion 73 and the notch 71c of the sleeve 71 to the sliding surface of the parking cam 61, viz., the sliding surface between the parking pawl 62 and the parking cam 61 and the sliding surface between the parking cam 61 and the sleeve 71.

Abstract: An object of the invention is to effectively remove particles on the glass substrate surfaces, even in the case wherein abrasive particles having a small particle size is used in the polishing step of the glass substrate and a supersonic treatment is performed at a high frequency at the supersonic cleaning step after the polishing step. In a manufacturing method of a glass substrate for a magnetic disk comprising a polishing step for performing polishing of the glass substrate and a supersonic cleaning step for performing supersonic cleaning of the glass substrate after the polishing step, the polishing step uses abrasive particles having a particle size of 10 nm to 30 nm and a first supersonic cleaning is performed at a frequency of 300 kHz to 1,000 kHz to form secondary particles and then a second supersonic cleaning is performed at a frequency of 30 kHz to 100 kHz in the supersonic cleaning step.

Abstract: In a magnetic disk glass substrate manufacturing method, a main surface of a glass substrate is polished using a polishing liquid containing colloidal silica abrasive particles as polishing abrasive particles and a surface plate with a polishing pad, then the glass substrate is brought into contact with a liquid containing a coagulant so that the colloidal silica abrasive particles are coagulated, and then the colloidal silica abrasive particles coagulated are removed.

Abstract: A differential device has a differential case that houses a gear group, and a ring gear that is disposed fitted to the differential case. The differential case and the ring gear are supported rotatably about a drive shaft. The ring gear is made up of a helical gear. The ring gear abuts the differential case in the axial direction of the drive shaft. The ring gear and the differential case are welded at an abutting portion of the ring gear and the differential case in the axial direction of the drive shaft.

Abstract: A semiconductor device includes a submount; a semiconductor laser mounted on the submount via solder in a junction-down manner. The semiconductor laser includes a semiconductor substrate, a semiconductor laminated structure containing a p-n junction, on the semiconductor substrate, and an electrode on the semiconductor laminated structure and joined to the submount via the solder. A high-melting-point metal or dielectric film is located between the submount and the semiconductor laminated structure and surrounds the electrode.

Abstract: A method for manufacturing a glass substrate for a magnetic disk comprises a surface grinding step of processing a mirror-surface plate glass, having a main surface in the form of a mirror surface, to a required flatness and surface roughness using fixed abrasive particles. The method comprises, before the surface grinding step using the fixed abrasive particles, a surface roughening step of roughening the surface of the mirror-surface plate glass by frosting.

Abstract: An information processing apparatus includes a display section and a main body section. The display section is disposed on a first surface and has a display panel and a display panel case. The display panel case houses the display panel such that the display panel can display an image. The display panel case has a protrusion portion formed at a first end. The main body section is disposed on a second surface and has an input section and a depressed portion. The depressed portion is formed at a second end of the second surface and has a pierced portion and a housing portion. The pierced portion is formed from the second surface to an opposite surface thereof such that a battery is attached to the pierced portion. The housing portion axially houses the protrusion portion on a side opposite to the input section with respect to the pierced portion.

Abstract: A GaN laser, includes a coating film on a front end surface through which laser light is emitted. The coating film includes a first insulating film in contact with the front end surface and a second insulating film on the first insulating film. The optical film thickness of the second insulating film is an odd multiple of ?/4 with respect to the wavelength ? of laser light produced by the semiconductor laser. The adhesion of the first insulating film to GaN is stronger than the adhesion of the second insulating film to GaN. The refractive index of the second insulating film is 2 to 2.3 thick. The first insulating film is 10 nm or less. The first insulating film is an oxide film having a stoichiometric composition.

Abstract: A method of manufacturing a semiconductor device provides a semiconductor device with a gallium-nitride-based semiconductor structure that allows long-term stable operation without degradation in device performance. After formation of an insulation film on a surface other than on a ridge surface, an oxygen-containing gas such as O2, O3, NO, N2O, or NO2 is supplied to oxidize a p-type GaN contact layer from the surface and to thereby form an oxide film on the surface of the p-type GaN contact layer. Then, a p-type electrode that establishes contact with the p-type GaN contact layer is formed by evaporation or sputtering on the oxide film and on the insulation film. Heat treatment is subsequently performed at temperatures between 400 and 700° C. in an atmosphere containing a nitrogen-containing gas such as N2 or NH3 or an inert gas such as Ar or He.

Abstract: A GaN laser, includes a coating film on a front end surface through which laser light is emitted. The coating film includes a first insulating film in contact with the front end surface and a second insulating film on the first insulating film. The optical film thickness of the second insulating film is an odd multiple of ?/4 with respect to the wavelength ? of laser light produced by the semiconductor laser. The adhesion of the first insulating film to GaN is stronger than the adhesion of the second insulating film; to GaN. The refractive index of the second insulating film is 2 to 2.3 thick. The first insulating film is 10 nm or less. The first insulating film is an oxide film having a stoichiometric composition.

Abstract: A method of manufacturing a semiconductor device is provided, which can reduce the contact resistance of an ohmic electrode to a p-type nitride semiconductor layer and can achieve long-term stable operation. In forming, in an electrode forming step, a p-type ohmic electrode of a metal film by successive lamination of a Pd film which is a first p-type ohmic electrode and a Ta film which is a second p-type ohmic electrode on a p-type GaN contact layer, the metal film is formed to include an oxygen atom. In the presence of an oxygen atom in the metal film, then in a heat-treatment step, the p-type ohmic electrode of the metal film is heat-treated in an atmosphere that contains no oxygen atom-containing gas.

Abstract: The invention provides a high-reliability nitride semiconductor laser that reduces the stress of a nitride dielectric film formed on a resonator's end face, thus reducing possible damage to the resonator's end face, which may occur during the formation of the nitride dielectric film. A method of manufacturing a nitride semiconductor laser according to the invention uses a nitride-based III-V compound semiconductor and includes the steps of (a) forming an adherence layer of a nitride dielectric on both a light-emitting and a light-reflecting end face of a resonator in plasma containing a nitrogen gas; and (b) forming a low-reflective and a high-reflective face-coating film of a dielectric on the adherence layers.

Abstract: A method of manufacturing a semiconductor device provides a semiconductor device with a gallium-nitride-based semiconductor structure that allows long-term stable operation without degradation in device performance. After formation of an insulation film on a surface other than on a ridge surface, an oxygen-containing gas such as O2, O3, NO, N2O, or NO2 is supplied to oxidize a p-type GaN contact layer from the surface and to thereby form an oxide film on the surface of the p-type GaN contact layer. Then, a p-type electrode that establishes contact with the p-type GaN contact layer is formed by evaporation or sputtering on the oxide film and on the insulation film. Heat treatment is subsequently performed at temperatures between 400 and 700° C. in an atmosphere containing a nitrogen-containing gas such as N2 or NH3 or an inert gas such as Ar or He.

Abstract: The step of forming an opening in an insulating layer to expose a carbon nanotube layer is performed using two types of dry etching different from each other in conditions. In the first-stage dry etching step, a hole is formed in the insulating layer to such a depth as not exposing the carbon nanotube layer. Thereafter, in the second-stage dry etching step, a bottom surface portion of the hole is removed, thus exposing an upper surface of the carbon nanotube layer. A method of manufacturing an electron emission source capable of improving performance of an electron emission portion is thus obtained.