Abstract: The present invention provides formulation parameters and manufacturing conditions for stable pharmaceutical compositions comprising N-{4-(2,2-dimethyl-propionyl)-(5R)-5-[(2-ethylamino-ethanesulfonylamino)-methyl]-5-phenyl-4,5-dihydro-[1,3,4]thiadiazol-2-yl}-2,2-dimethyl-propionamide that minimize undesirable chiral conversion to the less active S enantiomeric form.

Abstract: Disclosed is a method for optical resolution of an alkylpiperidin-3-yl carbamate, the method including bringing an RS mixture of an alkylpiperidin-3-yl carbamate into contact with an optically active tartaric acid in the presence of a solvent.

Abstract: A method of forming embrittled areas in multiple layers inside a wafer so as to enable the wafer to be divided correctly even at areas where embrittled areas intersect. In a first direction embrittling step an embrittled area is formed as a bottom layer, in a second direction embrittling step embrittled areas are formed as a bottom layer and a second layer, in the first direction embrittling step the embrittled areas are formed as a second layer and a third layer, and thereafter, the second direction embrittling step and the first direction embrittling step are alternately implemented, and finally, in the second direction embrittling step, embrittled area is formed as a top layer, so that a length of an unprocessed area is contained within a range that does not interfere with division.

Abstract: A wafer dividing method for dividing a wafer having a film on the front side thereof.

Abstract: A wafer laser processing method for forming deteriorated layers along a plurality of streets in the inside of a wafer having a device area where a plurality of areas are sectioned by the plurality of streets arranged in a lattice pattern on the front surface and devices are formed in the sectioned areas and having a peripheral excess area surrounding the device area, the surface of the device area being formed to be higher than the surface of the peripheral excess area, by applying a laser beam to the front surface of the wafer along the streets with its focal point set to the inside of the wafer, comprising a first deteriorated layer forming step for forming a deteriorated layer along the streets in the insides of the peripheral excess area and the device area by applying a laser beam to the peripheral excess area and the device area along the streets with its focal point set to the insides of the peripheral excess area and the device area from the front surface side of the wafer; and a second deteriorated l

Abstract: The present invention relates to a method of protecting a hydroxyl group, which includes reacting a hydroxyl group-containing compound with a compound represented by the formula (I): wherein R is a phenyl group optionally having substituent(s), an alkyl group optionally having substituent(s) or a benzyl group optionally having substituent(s), and X is a halogen atom, in the presence of an acid catalyst to substitute the hydrogen atom of the hydroxyl group of the hydroxyl group-containing compound with a protecting group represented by the formula (II): wherein R is as defined above. The present invention provides a method capable of introducing an acetal type protecting group into a hydroxyl group under mild conditions, and a protecting reagent therefor and a method of producing the protecting reagent.

Abstract: The present invention provides; a process for producing a compound (IV) comprising a step of reacting a compound (I) with a compound (II) in the presence of an optionally substituted cyclic secondary amine to obtain a compound (III) and a step of sequentially or simultaneously eliminating R1 and R2 from the compound (III), and then cyclizing the R1- and R2-eliminated compound to obtain the compound represented by the formula (IV); a process for producing a high purity compound (IV); an intermediate thereof; and a process for producing an intermediate.

Abstract: A silicon wafer laser processing method for forming a deteriorated layer along dividing lines formed on a silicon wafer in the inside of the silicon wafer by applying a laser beam along the dividing lines, wherein the wavelength of the laser beam is set to 1,100 to 2,000 nm.

Abstract: First, mapping data storing interrupted areas is obtained. In a first modified-layer forming step, before a stacked article is stacked on a front surface of a substrate, a laser beam is directed to the interrupted areas based on the mapping data to form modified layers only at the interrupted areas. After the stacked articles have been stacked on the substrate, in a second modified-layer forming step, the laser beam is directed at least to the predetermined dividing line formed with no modified layer in the first modified-layer forming step to form a modified layer.

Abstract: A method of dividing, along lattice pattern-like dividing lines, a wafer which has the lattice pattern-like dividing lines and a polymer film on the front surface of a substrate and is processed to allow for division along the dividing lines, the method comprising a frame holding step for putting the wafer on the surface of an adhesive tape mounted on an annular frame; a wafer cooling step for cooling the wafer that is affixed to the surface of the adhesive tape mounted on the annular frame; and a diving step for dividing the wafer along the dividing lines by expanding the adhesive tape to which the cooled wafer is affixed.

Abstract: A method of carrying out laser processing on a wafer having a plurality of parallel streets on the front surface along the streets, comprising the steps of: carrying out a first laser processing step of carrying out laser processing along streets formed in one half area of the wafer by carrying out a laser beam application step for applying a laser beam along the streets by positioning the outermost street on one side in the indexing-feed direction of the wafer right below a condenser and an indexing-feed step for positioning a street adjacent to the street which has undergone the laser beam application step on the wafer right below the condenser sequentially; and carrying out a second laser processing step of carrying out laser processing along streets formed in the other half area of the wafer by carrying out a laser beam application step for applying a laser beam along the streets by positioning the outermost street on the other side in the indexing-feed direction of the wafer which has undergone the fi

Abstract: A laser beam processing machine comprising a path distribution means for distributing a pulse laser beam oscillated by pulse laser beam oscillation means to a first path and a second path alternately, and one laser beam that passes through one of the paths and is converged by one condensing lens and the other laser beam that passes through the other path and is converged by the condensing lens are applied at different focusing points which have been displaced from each other in the direction of the optical axis, alternately with a time lag between them.

Abstract: A folding electric has an upper unit and lower unit. A hinge connects the upper unit to the lower unit. The hinge includes at least a perpendicular opening and closing shaft to open and close the upper unit with respect to the lower unit and a horizontal rotation shaft, fixed vertically to the surface of the lower unit, to rotate the upper unit with respect to the lower unit coming in contact with each other.

Abstract: The present invention can provide a solvate, a cubic crystal and a columnar crystal of 2-amino-6-benzyloxypurine by crystallization from (1) a solvent containing at least one kind of solvent selected from the group consisting of alcohol and water, (2) alcohol or (3) a water-containing solvent.

Abstract: A method of carrying out laser processing on a wafer having a plurality of parallel streets on the front surface along the streets, comprising the steps of: carrying out a first laser processing step of carrying out laser processing along streets formed in one half area of the wafer by carrying out a laser beam application step for applying a laser beam along the streets by positioning the outermost street on one side in the indexing-feed direction of the wafer right below a condenser and an indexing-feed step for positioning a street adjacent to the street which has undergone the laser beam application step on the wafer right below the condenser sequentially; and carrying out a second laser processing step of carrying out laser processing along streets formed in the other half area of the wafer by carrying out a laser beam application step for applying a laser beam along the streets by positioning the outermost street on the other side in the indexing-feed direction of the wafer which has undergone the fi

Abstract: A wiring device is used in a folding portable device including a hinge unit permitting an upper unit to fold/unfold and/or to rotate with regard to a lower unit. The wiring device comprises a rotative direction wound portion having a first central axis corresponding to a rotating axis of the hinge. A folding/unfolding direction wound portion has a second central axis corresponding to a folding/unfolding axis of the hinge. A FPC fixing member fixes a FPC holding member holding a predetermined part of a FPC to the hinge. The rotative direction wound portion is wound with a first part of a flexible printed cable that is continuous with one end of the predetermined part. The folding/unfolding direction wound portion is wound with a second part of the flexible printed cable that is continuous with the other end of the predetermined part.

Abstract: A method of forming embrittled areas in multiple layers inside a wafer so as to enable the wafer to be divided correctly even at areas where embrittled areas intersect. In a first direction embrittling step an embrittled area is formed as a bottom layer, in a second direction embrittling step embrittled areas are formed as a bottom layer and a second layer, in the first direction embrittling step the embrittled areas are formed as a second layer and a third layer, and thereafter, the second direction embrittling step and the first direction embrittling step are alternately implemented, and finally, in the second direction embrittling step, embrittled area is formed as a top layer, so that a length of an unprocessed area is contained within a range that does not interfere with division.

Abstract: A fold-type cellular phone has a top unit, a bottom unit and a hinge coupling together the top unit and the bottom unit while allowing the top unit to turn and swivel with respect to the bottom unit. The top unit is first unfolded from a first folded position to an attitude angle of 160 to 170 degrees, and swiveled by 180 degrees to be folded onto the bottom unit in a second folded position at an attitude angle of 180 degrees. The swivel movement of the top unit causes a cam assembly to turn the top unit from the attitude angle of 160-170 degrees to an attitude angle of 180 degrees in the second folded position, thereby allowing the top unit to assume a suitable attitude with respect to the bottom unit.

Abstract: A laser beam processing machine comprising a path distribution means for distributing a pulse laser beam oscillated by pulse laser beam oscillation means to a first path and a second path alternately, and one laser beam that passes through one of the paths and is converged by one condensing lens and the other laser beam that passes through the other path and is converged by the condensing lens are applied at different focusing points which have been displaced from each other in the direction of the optical axis, alternately with a time lag between them.

Abstract: A method of dividing, along lattice pattern-like dividing lines, a wafer which has the lattice pattern-like dividing lines and a polymer film on the front surface of a substrate and is processed to allow for division along the dividing lines, the method comprising a frame holding step for putting the wafer on the surface of an adhesive tape mounted on an annular frame; a wafer cooling step for cooling the wafer that is affixed to the surface of the adhesive tape mounted on the annular frame; and a diving step for dividing the wafer along the dividing lines by expanding the adhesive tape to which the cooled wafer is affixed.