Abstract: A substrate processing apparatus has a polishing tape and a polishing head for pressing the polishing tape against a peripheral portion of a semiconductor wafer. The substrate processing apparatus polishes the wafer due to sliding contact of the polishing tape and the wafer. The polishing head has an elastic body for supporting the polishing tape. The substrate processing apparatus has an air cylinder for pressing the polishing head so that the elastic body of the polishing head presses the polishing tape against the predetermined portion of the wafer under a constant force.

Abstract: A substrate processing apparatus has a polishing tape and a polishing head for pressing the polishing tape against a peripheral portion of a semiconductor wafer. The substrate processing apparatus polishes the wafer due to sliding contact of the polishing tape and the wafer. The polishing head has an elastic body for supporting the polishing tape. The substrate processing apparatus has an air cylinder for pressing the polishing head so that the elastic body of the polishing head presses the polishing tape against the predetermined portion of the wafer under a constant force.

Abstract: A polishing apparatus and method has a function of polishing a surface of a film formed on a substrate to a flat mirror finish and a function of polishing unnecessary metal film such as copper film deposited on an outer peripheral portion of the substrate to remove such unnecessary metal film. The polishing apparatus comprises a surface polishing mechanism comprising a polishing table having a polishing surface and a top ring for holding the substrate and pressing the substrate against the polishing surface of the polishing table to thereby polish a surface of the substrate, and an outer periphery polishing mechanism for polishing an outer peripheral portion of the substrate.

Abstract: A substrate processing apparatus is used for removing surface irregularities occurring on a peripheral portion (a bevel portion, an edge portion, and a notch) of a substrate, such as a semiconductor wafer, and films deposited as a contaminant on the peripheral portion of such a substrate. The substrate processing apparatus includes an edge-portion polisher for pressing a polishing tape against an edge portion of a substrate and causing relative movement between the polishing tape and the substrate to polish the edge portion of the substrate, and a bevel-portion polisher for pressing a polishing tape against a bevel portion of the substrate and causing relative movement between this polishing tape and the substrate to polish the bevel portion of the substrate.

Abstract: A polishing apparatus and method has a function of polishing a surface of a film formed on a substrate to a flat mirror finish and a function of polishing unnecessary metal film such as copper film deposited on an outer peripheral portion of the substrate to remove such unnecessary metal film. The polishing apparatus comprises a surface polishing mechanism comprising a polishing table having a polishing surface and a top ring for holding the substrate and pressing the substrate against the polishing surface of the polishing table to thereby polish a surface of the substrate, and an outer periphery polishing mechanism for polishing an outer peripheral portion of the substrate.

Abstract: A polishing apparatus and method has a function of polishing a surface of a film formed on a substrate to a flat mirror finish and a function of polishing unnecessary metal film such as copper film deposited on an outer peripheral portion of the substrate to remove such unnecessary metal film. The polishing apparatus comprises a surface polishing mechanism comprising a polishing table having a polishing surface and a top ring for holding the substrate and pressing the substrate against the polishing surface of the polishing table to thereby polish a surface of the substrate, and an outer periphery polishing mechanism for polishing an outer peripheral portion of the substrate.

Abstract: A polishing cloth mounted on a turntable is dressed by bringing a dresser in contact with the polishing cloth for restoring the polishing capability of the polishing cloth. The dressing is performed by measuring heights of a surface of the polishing cloth at radial positions of the polishing cloth in a radial direction thereof determining a rotational speed of the dresser with respect to a rotational speed of the turntable on the basis of the measured heights, and dressing the polishing cloth by pressing the dresser are rotating. The dresser has an annular diamond grain layer or an annular SiC layer.

Abstract: A substrate processing apparatus is used for removing surface irregularities occurring on the peripheral portion (a bevel portion, an edge portion, and a notch) of a substrate such as a semiconductor wafer and films deposited as a contaminant on the peripheral portion of such a substrate. The substrate processing apparatus includes an edge-portion polisher for pressing a polishing tape against an edge portion of a substrate and making a relative movement between the polishing tape and the substrate to polish the edge portion of the substrate, and a bevel-portion polisher for pressing a polishing tape against a bevel portion of the substrate and making a relative movement between the polishing tape and the substrate to polish the bevel portion of the substrate.

Abstract: An angular substrate polishing method includes the steps of holding an angular substrate having a surface to be polished within a guide ring of a substrate holding head; pressing the substrate surface to be polished, and also one surface of the guide ring, against a polishing pad; and independently rotating the polishing pad and the substrate-holding head together with the substrate it holds while pressing the polishing pad-contacting surface of the guide ring against the polishing pad, to thereby polish the substrate surface. During the polishing step, a pressing force is applied to the guide ring which is separate from the pressing force applied to the substrate, enhancing the flatness of the polished substrate.

Abstract: A polishing apparatus and method has a function of polishing a surface of a film formed on a substrate to a flat mirror finish and a function of polishing unnecessary metal film such as copper film deposited on an outer peripheral portion of the substrate to remove such unnecessary metal film. The polishing apparatus comprises a surface polishing mechanism comprising a polishing table having a polishing surface and a top ring for holding the substrate and pressing the substrate against the polishing surface of the polishing table to thereby polish a surface of the substrate, and an outer periphery polishing mechanism for polishing an outer peripheral portion of the substrate.

Abstract: In a heat treating method and furnace used in this method which can prevent disturbance of an atmosphere gas inside a heat chamber, and can prevent deterioration of the processing quality and efficiency of work, a control section 4 first operates a vacuum pump VP to reduce the inner pressure of a purge chamber 3 to a predetermined pressure level, then manipulates a large and small caliber operating valve (13a, 13b) to supply the atmosphere from the interior of the heat chamber 1 to that of the purge chamber 3, and the control section 4 actuates transporting means 5 to transport the work W between the purge chamber 3 and the heat chamber 1 in a state wherein the inner pressures of the purge chamber 3 and the heat chamber 1 have been rendered substantially equal on the basis of detected values from first and second pressure sensors PS1, PS2.

Abstract: A substrate processing apparatus according to the present invention has a polishing tape and a polishing head for pressing the polishing tape against a peripheral portion of a semiconductor wafer. The substrate processing apparatus polishes the wafer due to sliding contact of the polishing tape and the wafer. The polishing head has an elastic body for supporting the polishing tape. The substrate processing apparatus has an air cylinder for pressing the polishing head so that the elastic body of the polishing head presses the polishing tape against the predetermined portion of the wafer under a constant force.

Abstract: A polishing apparatus and method has a function of polishing a surface of a film formed on a substrate to a flat mirror finish and a function of polishing unnecessary metal film such as copper film deposited on an outer peripheral portion of the substrate to remove such unnecessary metal film. The polishing apparatus comprises a surface polishing mechanism comprising a polishing table having a polishing surface and a top ring for holding the substrate and pressing the substrate against the polishing surface of the polishing table to thereby polish a surface of the substrate, and an outer periphery polishing mechanism for polishing an outer peripheral portion of the substrate.

Abstract: A polishing apparatus has a turntable with a polishing cloth attached thereto and a top ring for holding and pressing a workpiece to be polished against the polishing cloth under a certain pressure. The polishing apparatus also has a first dressing unit having a contact-type dresser for dressing the polishing cloth by bringing the contact-type dresser in contact with the polishing cloth, and a second dressing unit having a noncontact-type dresser for dressing the polishing cloth with a fluid jet applied therefrom to the polishing cloth. The contact-type dresser comprises a diamond dresser or an SiC dresser.

Abstract: A polishing apparatus has a turntable with a polishing cloth attached thereto and a top ring for holding and pressing a workpiece to be polished against the polishing cloth under a certain pressure. The polishing apparatus also has a first dressing unit having a contact-type dresser for dressing the polishing cloth by bringing the contact-type dresser in contact with the polishing cloth, and a second dressing unit having a noncontact-type dresser for dressing the polishing cloth with a fluid jet applied therefrom to the polishing cloth. The contact-type dresser comprises a diamond dresser or an SiC dresser.

Abstract: An angular substrate polishing method includes the steps of holding an angular substrate having a surface to be polished within a guide ring of a substrate holding head; pressing the substrate surface to be polished, and also one surface of the guide ring, against a polishing pad; and independently rotating the polishing pad and the substrate-holding head together with the substrate it holds while pressing the polishing pad-contacting surface of the guide ring against the polishing pad, to thereby polish the substrate surface. During the polishing step, a pressing force is applied to the guide ring which is separate from the pressing force applied to the substrate, enhancing the flatness of the polished substrate.

Abstract: In a heat treating method and furnace used in this method which can prevent disturbance of an atmosphere gas inside a heat chamber, and can prevent deterioration of the processing quality and efficiency of work, a control section 4 first operates a vacuum pump VP to reduce the inner pressure of a purge chamber 3 to a predetermined pressure level, then manipulates a large and small caliber operating valve (13a, 13b) to supply the atmosphere from the interior of the heat chamber 1 to that of the purge chamber 3, and the control section 4 actuates transporting means 5 to transport the work W between the purge chamber 3 and the heat chamber 1 in a state wherein the inner pressures of the purge chamber 3 and the heat chamber 1 have been rendered substantially equal on the basis of detected values from first and second pressure sensors PS1, PS2.

Abstract: A polishing cloth mounted on a turntable is dressed by bringing a dresser in contact with the polishing cloth for restoring polishing capability of the polishing cloth. The dressing is performed by measuring heights of a surface of the polishing cloth at radial positions of the polishing cloth in a radial direction thereof, determining a rotational speed of the dresser with respect to a rotational speed of the turntable on the basis of the measured heights, and dressing the polishing cloth by pressing the dresser against the polishing cloth while the turntable and the dresser are rotating. The dresser has an annular diamond grain layer or an annular SiC layer.

Abstract: A workpiece such as a semiconductor wafer is supported on a top ring and polished by an abrasive cloth on a turntable while the top ring is being pressed against the turntable and the turntable and the top ring are being rotated. The top ring is coupled to a top ring drive shaft, coupled to a pressure cylinder for pressing the top ring, and to a motor for rotating the top ring. A spherical bearing is interposed between the top ring and the top ring drive shaft for allowing the top ring to align with the upper surface of the moving turntable. A torque transmitting mechanism is operatively coupled between the top ring and the top ring drive shaft for rotating the top ring in synchronization with the top ring drive shaft.

Abstract: A turntable with an abrasive cloth mounted thereon and a top ring positioned above the turntable are independently rotatably provided. The top ring holds a workpiece to be polished and presses the workpiece against the abrasive cloth. The turntable and the top ring are rotated to polish the surface of the workpiece to a flat mirror finish on the abrasive cloth. A rotatable brush pressed against the abrasive cloth is rotated about an axis substantially perpendicularly to the plane of the abrasive cloth, and oscillated substantially radially between radially inner and outer positions over the abrasive cloth. A cleaning solution is sprayed from a nozzle onto the abrasive cloth. The turntable has a bank along an outer circumferential edge thereto for preventing a protective solution, which is supplied to the abrasive cloth to keep the abrasive cloth wet and prevent it, from flowing off the turntable when the turntable is stationary.