Abstract: A method for developing an epoxy resin impregnated glass fiber Direct Current (DC) bushing, comprising: according to length parameters of each layer of capacitive screen or resistive screen designed depending on insulation requirements, selecting bushing design parameters, determining a winding machine program according to the bushing design parameters, and winding a core body according to the winding machine program, wherein during the core body winding process, the core body begins to be initially cured; after the core body is wound, curing the core body by an oven according to a preset oven temperature and duration; machining the cured core body according to a preset core body design drawing; after the inner wall of a flange is polished and cleaned and is heated and pretreated by the oven, injecting glue at the position of a glue injection hole of the flange for gluing the core body and the flange; sequentially assembling a collector ring, a hollow composite insulator, and a voltage-equalizing sealing cove

Abstract: A request is received from a tenant. For example, the tenant may be a tenant of a multi-tenant cloud service. The request comprises a one or more Configuration Items (CIs). A CI is used to change data on a computer system or network. A computer resource license associated with the tenant is identified. A determination is made to identify if the request meets the computer resource license. In response to the request meeting the computer resource license, the one or more configuration items are implemented according to the computer resource license. In response to the request not meeting the computer resource license, the request is modified. For example, the request may be split into a plurality of requests.

Abstract: A graphdiyne dispersion liquid, a bi-component polyurethane adhesive and a preparation method therefor, wherein the graphdiyne dispersion liquid is prepared from graphdiyne powder and a polyurethane dispersant; component A of the bi-component polyurethane adhesive comprises a polyurethane prepolymer, an additive and a graphdiyne dispersion liquid, and component B of the bi-component polyurethane adhesive comprises polyol, a catalyst, and a graphdiyne dispersion liquid. The bi-component polyurethane adhesive has relatively good anti-ultraviolet weather resistance and bubble suppression performance during a curing process, and has a potential application value in high-end industrial fields.

Abstract: Provided are a polyurethane phase-change nanocapsule, a phase-change polyurethane pouring sealant and a preparation method therefor. The polyurethane phase-change nanocapsule is a nanocapsule formed by coating a phase-change material with an amphiphilic block copolymer. The oleophilic end of the amphiphilic block copolymer is a polyurethane chain segment, and the hydrophilic end is a methoxy polyethylene glycol chain segment. The polyurethane phase-change nanocapsule is added, such that the two-component phase-change polyurethane pouring sealant has a temperature control advantage, and has an excellent enthalpy value and heat-conducting properties while maintaining a low viscosity. In the field of electronic engineering, particularly in the field of electronics needing temperature control, the pouring sealant has an application value.

Abstract: An apparatus for producing ammonia using electric discharge of water according to an embodiment of the present invention includes a plasma decomposition reaction part configured to produce hydrogen (H2) and oxygen (O2) from water by supplying the water to plasma generated by using nitrogen gas (N2) as electric discharge gas and produce nitrogen monoxide (NO) and nitrogen dioxide (NO2) by allowing oxygen (O2) to react with nitrogen (N2), a thermal decomposition reaction part connected to a lower side of the plasma decomposition reaction part and configured to produce solid carbon and hydrogen (H2) by decomposing water and hydrocarbon by further supplying hydrocarbon or hydrogen to an additional supply port, and a synthetic catalyst part connected to the thermal decomposition reaction part and configured to produce ammonia (NH3) by synthesizing hydrogen (H2) and nitrogen monoxide (NO) separated from water.

Abstract: An apparatus for depolymerizing a hydrocarbon-based material according to an embodiment of the present disclosure includes a supply unit configured to supply a liquid hydrocarbon, a plasma generation unit configured to generate plasma for supplying thermal energy to the hydrocarbon in the supply unit, a reaction unit provided between the supply unit and the plasma generation unit and configured to convert the liquid hydrocarbon, and a separation unit connected to the reaction unit and configured to separate an unreacted hydrocarbon, a liquid product, and a gaseous product of an aromatic compound that is created by conversion in the reaction unit and introduced.

Abstract: An ammonia generator using plasma according to an embodiment of the present invention includes a plasma reactor that generates a plasma discharge using nitrogen (N2) as a discharge gas, generates hydrogen (H2) and oxygen (O2) from water (H2O) using energy of the plasma, generates nitrogen monoxide (NO) from the oxygen (O2) and the nitrogen (N2), and supplies the hydrogen (H2) and the nitrogen monoxide (NO), a first reactor that generates ammonia (NH3) by first action on the nitrogen (N2), the nitrogen monoxide (NO), and the hydrogen (H2) supplied from the plasma reactor, and a second reactor that additionally generates the ammonia (NH3) by second action on a nitrate solution (NO3?) generated in the plasma reactor.

Abstract: A method for developing an epoxy resin impregnated glass fiber Direct Current (DC) bushing, comprising: according to length parameters of each layer of capacitive screen or resistive screen designed depending on insulation requirements, selecting bushing design parameters, determining a winding machine program according to the bushing design parameters, and winding a core body according to the winding machine program, wherein during the core body winding process, the core body begins to be initially cured; after the core body is wound, curing the core body by an oven according to a preset oven temperature and duration; machining the cured core body according to a preset core body design drawing; after the inner wall of a flange is polished and cleaned and is heated and pretreated by the oven, injecting glue at the position of a glue injection hole of the flange for gluing the core body and the flange; sequentially assembling a collector ring, a hollow composite insulator, and a voltage-equalizing sealing cove

Abstract: In a method of forming pattern, a target layer is formed on a semiconductor substrate, and pluralities of first spacers having cylindrical shapes protruding from the target layer are formed. A second spacer layer is formed to cover the first spacers, provide interstitial spaces between the first spacers, and provide second inner spaces within first inner spaces of the first spacers, respectively. The second spacer layer is etched to form first opening portions in which the second inner spaces and the interstitial spaces extend into the target layer.

Abstract: In a method of forming pattern, a target layer is formed on a semiconductor substrate, and pluralities of first spacers having cylindrical shapes protruding from the target layer are formed. A second spacer layer is formed to cover the first spacers, provide interstitial spaces between the first spacers, and provide second inner spaces within first inner spaces of the first spacers, respectively. The second spacer layer is etched to form first opening portions in which the second inner spaces and the interstitial spaces extend into the target layer.

Abstract: A method for fabricating a semiconductor device includes: etching a semiconductor substrate and forming a plurality of bodies separated from one another by a plurality of trenches; forming a protective layer with open parts to expose both sidewalls of each of the bodies; forming buried bit lines in the bodies by silicidizing exposed portions of the bodies through the open parts; and forming a dielectric layer to gap-fill the trenches and define air gaps between adjacent buried bit lines.

Abstract: A method for fabricating a semiconductor device includes: etching a semiconductor substrate and forming a plurality of bodies separated from one another by a plurality of trenches; forming a protective layer with open parts to expose both sidewalls of each of the bodies; forming buried bit lines in the bodies by silicidizing exposed portions of the bodies through the open parts; and forming a dielectric layer to gap-fill the trenches and define air gaps between adjacent buried bit lines.

Abstract: A method for fabricating a semiconductor device includes: etching a semiconductor substrate and forming a plurality of bodies separated from one another by a plurality of trenches; forming a protective layer with open parts to expose both sidewalls of each of the bodies; forming buried bit lines in the bodies by silicidizing exposed portions of the bodies through the open parts; and forming a dielectric layer to gap-fill the trenches and define air gaps between adjacent buried bit lines.

Abstract: A method of forming patterns includes forming pillars and first peripheral patterns on an underlying layer, forming a separation wall layer covering sidewalls of the pillars and the first peripheral patterns, forming blocking portions on the separation wall layer to fill first openings between the first peripheral patterns, forming a block copolymer layer filling gap regions between the pillars, annealing the block copolymer layer to form first domains and a second domain surrounding the first domains, removing the first domains and removing portions of the separation wall layer to form second openings, removing the second domain and the blocking portions, removing the pillars and the first peripheral patterns to form third openings and fourth openings, and patterning the underlying layer to form fifth openings that extend from the second and third openings and sixth openings that extend from the fourth openings.

Abstract: A novel strain of Pleurotus nebrodensis (Daewang No. 1, Accession No.: KACC93181P) and a method for cultivating it are provided. The novel strain of Pleurotus nebrodensis is different from the existing Pleurotus ferulae in shape and physiological characteristic, has an extra after-ripening period, can be grown at a low temperature of 22 to 25° C. and a low water content (RH) of 60 to 65%, can be cultivated in slightly acid environment of pH 5.5 to 6.5, can utilize bottle cultivation, and has a good shape not to be easily damaged in packaging. Thus, the novel strain of Pleurotus nebrodensis according to the present invention have good commercial value, are more resistant to environmental change, and can be mass produced by automation system and used for creating high value-added business in the food and agriculture industry.

Abstract: A method of fabricating a semiconductor device includes forming line patterns over a first region of an etch target layer and a pre-pad pattern over second and third regions of the etch target layer; forming pillars over the line patterns and a sacrificial pad pattern over the pre-pad pattern; forming first spacers over sidewalls of the pillars such that the first spacers contact one another and form first pre-openings therebetween; removing the pillars to form second pre-openings; cutting the line patterns through the first and second pre-openings, and forming cut patterns; etching the pre-pad pattern using the sacrificial pad pattern as an etch mask, and forming a pad pattern; and etching the etch target layer using the cut patterns and the pad pattern as an etch mask, to define first patterns and a second pattern over the first region and the second region, respectively.

Abstract: An organocatalytic kinetic resolution of racemic secondary nitroallylic alcohols via Michael/acetalization sequence to give fully substituted tetrahydropyranols is described. The process affords the products with high to excellent stereoselectivities. The highly enantioenriched, less reactive (S)-nitroallylic alcohols were isolated with good to high chemical yields. The synthetic application of the resolved substrate is shown toward the synthesis of enantioenriched (+)-(2S,3R)-3-amino-2-hydroxy-4-phenylbutyric acid.

Abstract: A method for fabricating a semiconductor device includes: etching a semiconductor substrate and forming a plurality of bodies separated from one another by a plurality of trenches; forming a protective layer with open parts to expose both sidewalls of each of the bodies; forming buried bit lines in the bodies by silicidizing exposed portions of the bodies through the open parts; and forming a dielectric layer to gap-fill the trenches and define air gaps between adjacent buried bit lines.

Abstract: A method of forming patterns includes forming pillars and first peripheral patterns on an underlying layer, forming a separation wall layer covering sidewalls of the pillars and the first peripheral patterns, forming blocking portions on the separation wall layer to fill first openings between the first peripheral patterns, forming a block copolymer layer filling gap regions between the pillars, annealing the block copolymer layer to form first domains and a second domain surrounding the first domains, removing the first domains and removing portions of the separation wall layer to form second openings, removing the second domain and the blocking portions, removing the pillars and the first peripheral patterns to form third openings and fourth openings, and patterning the underlying layer to form fifth openings that extend from the second and third openings and sixth openings that extend from the fourth openings.

Abstract: A method of fabricating a semiconductor device includes forming line patterns over a first region of an etch target layer and a pre-pad pattern over second and third regions of the etch target layer; forming pillars over the line patterns and a sacrificial pad pattern over the pre-pad pattern; forming first spacers over sidewalls of the pillars such that the first spacers contact one another and form first pre-openings therebetween; removing the pillars to form second pre-openings; cutting the line patterns through the first and second pre-openings, and forming cut patterns; etching the pre-pad pattern using the sacrificial pad pattern as an etch mask, and forming a pad pattern; and etching the etch target layer using the cut patterns and the pad pattern as an etch mask, to define first patterns and a second pattern over the first region and the second region, respectively.