Patents by Inventor You SONG
You SONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240162565Abstract: A separator for a rechargeable lithium battery, negative electrode-separator assembly for a rechargeable lithium battery, and rechargeable lithium battery are provided. The separator includes a ceramic layer including ceramic particles and a binder, and a functional layer on the ceramic layer including inorganic particles having a working potential (vs Li/Li+) of greater than or equal to about 1 V and a binder.Type: ApplicationFiled: August 2, 2023Publication date: May 16, 2024Inventors: Duckjae YOU, Kyoseon KOO, Junghyun NAM, Jeunggi MOON, Hyo-jung SONG, Mihwa YANG, Hosung YANG, Jinhee LEE, Jinyoung JANG, Byoung-Sun LEE, Hyeji SHIN, Heeyeon KIM
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Patent number: 11978775Abstract: A semiconductor device comprising a gate electrode on a substrate, a source/drain pattern on the substrate on a side of the gate electrode, and a gate contact plug on the gate electrode are disclosed. The gate contact plug may include a first gate contact segment, and a second gate contact segment that extends in a vertical direction from a top surface of the first gate contact segment. An upper width of the first gate contact segment may be greater than a lower width of the second gate contact segment.Type: GrantFiled: June 16, 2022Date of Patent: May 7, 2024Assignee: Samsung Electronics Co., Ltd.Inventors: Doohyun Lee, Hyun-Seung Song, Yeongchang Roh, Heonjong Shin, Sora You, Yongsik Jeong
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Publication number: 20240140741Abstract: A docking control system for a vehicle and a building and a method therefor, includes a plurality of sensors including a vehicle sensor and a gate sensor, and a controller, when a vehicle approaches a gate, which controls the plurality of sensors to set amount of movement of the vehicle, to move the gate so that a vehicle door and the gate are brought into close contact with each other, and when positional satisfaction between the vehicle door and the gate is achieved, which opens the vehicle door and the gate so that an indoor space of the vehicle and an indoor space of the building are connected each other into one space.Type: ApplicationFiled: March 3, 2023Publication date: May 2, 2024Applicants: Hyundai Motor Company, Kia CorporationInventors: Ki Hyun CHOI, Ji Hyun SONG, Hyung Sik CHOI, Sun In YOU, Sang Heon LEE, Jin Ho HWANG, Dong Eun CHA, Won Chan LEE
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Publication number: 20240131910Abstract: A vehicle body frame includes a lower frame fixed to a floor of a vehicle to define a lower region of an internal space in the vehicle, a roof frame connected to an upper portion of the lower frame to define an upper region of the internal space, configured to slid in a vertical direction of the vehicle with respect to the lower frame, to expand the internal space upwards when the roof frame slides upwards, a lower door frame forming a lower portion of a vehicle door, and an upper door frame connected to the lower door frame to form an upper portion of the vehicle door, and configured to slid together with the roof frame to expand the vehicle door upwards when the roof frame slides upwards.Type: ApplicationFiled: April 12, 2023Publication date: April 25, 2024Applicants: Hyundai Motor Company, Kia CorporationInventors: Ki Hyun CHOI, Ji Hyun SONG, Hyung Sik CHOI, Sun In YOU, Sang Heon LEE, Jin Ho HWANG, Dong Eun CHA, Won Chan LEE
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Publication number: 20240125168Abstract: A docking system between a vehicle and a building and a control method therefor include an entrance frame configured to extend in a direction towards a vehicle door, an external door provided at a side of the vehicle door to be opened, an internal door spaced from the external door and provided at a side of the building to be opened, and a sealing unit inserted into the entrance frame to be provided between the external door and the internal door, and configured to selectively extend in the direction toward the vehicle door to connect an internal space of the vehicle and an indoor space of the building into one space.Type: ApplicationFiled: April 14, 2023Publication date: April 18, 2024Applicants: Hyundai Motor Company, Kia CorporationInventors: Ki Hyun Choi, Hyung Sik Choi, Sun In You, Sang Heon Lee, Ji Hyun Song, Won Chan Lee
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Publication number: 20240084484Abstract: The present disclosure provides a method and a device for preparing a modified poly (m-phenylene isophthalamide) (PMIA) fiber by continuous polymerization-dry-wet spinning. The method includes the following steps: (1) preparing a mixed solution of m-phenylenediamine (MPD) and a copolymerized diamine monomer in N,N-dimethylacetamide (DMAC) serving as a solvent using a cosolvent; (2) mixing isophthaloyl chloride (IPC) with the mixed solution of the MPD and the copolymerized diamine monomer in the DMAC, and conducting pre-polycondensation and polycondensation in sequence to obtain a modified PMIA resin solution; and (3) subjecting the modified PMIA resin solution to additive addition, filtration, defoaming, and dry-wet spinning to obtain the modified PMIA fiber.Type: ApplicationFiled: October 11, 2022Publication date: March 14, 2024Applicant: ZHUZHOU TIMES NEW MATERIAL TECHNOLOGY CO., LTD.Inventors: Jun YANG, Kaikai CAO, Jin WANG, Yufeng LIU, Zhicheng SONG, You YANG, Feng YUAN, Wei WU, Zhijun ZHANG, Lei CHEN
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Publication number: 20230343489Abstract: A method for developing an epoxy resin impregnated glass fiber Direct Current (DC) bushing, comprising: according to length parameters of each layer of capacitive screen or resistive screen designed depending on insulation requirements, selecting bushing design parameters, determining a winding machine program according to the bushing design parameters, and winding a core body according to the winding machine program, wherein during the core body winding process, the core body begins to be initially cured; after the core body is wound, curing the core body by an oven according to a preset oven temperature and duration; machining the cured core body according to a preset core body design drawing; after the inner wall of a flange is polished and cleaned and is heated and pretreated by the oven, injecting glue at the position of a glue injection hole of the flange for gluing the core body and the flange; sequentially assembling a collector ring, a hollow composite insulator, and a voltage-equalizing sealing coveType: ApplicationFiled: December 7, 2020Publication date: October 26, 2023Inventors: Jiangang DENG, Zhenbo LAN, Zhuolin XU, You SONG, Yu NIE, Lei KE, Hao ZHAN, Jun FU, Qiang SUN, Yuefei MAO, Qian MA, Qianwen ZHOU, Kaikai GU, Haoxin LI, Lei SHI, Yu XU, Cheng TANG, Yakai PENG, Youyi SHI
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Patent number: 11289337Abstract: In a method of forming pattern, a target layer is formed on a semiconductor substrate, and pluralities of first spacers having cylindrical shapes protruding from the target layer are formed. A second spacer layer is formed to cover the first spacers, provide interstitial spaces between the first spacers, and provide second inner spaces within first inner spaces of the first spacers, respectively. The second spacer layer is etched to form first opening portions in which the second inner spaces and the interstitial spaces extend into the target layer.Type: GrantFiled: May 15, 2020Date of Patent: March 29, 2022Assignee: SK hynix Inc.Inventor: You Song Kim
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Publication number: 20210104409Abstract: In a method of forming pattern, a target layer is formed on a semiconductor substrate, and pluralities of first spacers having cylindrical shapes protruding from the target layer are formed. A second spacer layer is formed to cover the first spacers, provide interstitial spaces between the first spacers, and provide second inner spaces within first inner spaces of the first spacers, respectively. The second spacer layer is etched to form first opening portions in which the second inner spaces and the interstitial spaces extend into the target layer.Type: ApplicationFiled: May 15, 2020Publication date: April 8, 2021Applicant: SK hynix Inc.Inventor: You Song KIM
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Patent number: 10204913Abstract: A method for fabricating a semiconductor device includes: etching a semiconductor substrate and forming a plurality of bodies separated from one another by a plurality of trenches; forming a protective layer with open parts to expose both sidewalls of each of the bodies; forming buried bit lines in the bodies by silicidizing exposed portions of the bodies through the open parts; and forming a dielectric layer to gap-fill the trenches and define air gaps between adjacent buried bit lines.Type: GrantFiled: October 31, 2017Date of Patent: February 12, 2019Assignee: SK Hynix Inc.Inventors: You-Song Kim, Jin-Ki Jung
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Publication number: 20180053770Abstract: A method for fabricating a semiconductor device includes: etching a semiconductor substrate and forming a plurality of bodies separated from one another by a plurality of trenches; forming a protective layer with open parts to expose both sidewalls of each of the bodies; forming buried bit lines in the bodies by silicidizing exposed portions of the bodies through the open parts; and forming a dielectric layer to gap-fill the trenches and define air gaps between adjacent buried bit lines.Type: ApplicationFiled: October 31, 2017Publication date: February 22, 2018Inventors: You-Song KIM, Jin-Ki JUNG
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Patent number: 9837422Abstract: A method for fabricating a semiconductor device includes: etching a semiconductor substrate and forming a plurality of bodies separated from one another by a plurality of trenches; forming a protective layer with open parts to expose both sidewalls of each of the bodies; forming buried bit lines in the bodies by silicidizing exposed portions of the bodies through the open parts; and forming a dielectric layer to gap-fill the trenches and define air gaps between adjacent buried bit lines.Type: GrantFiled: June 10, 2016Date of Patent: December 5, 2017Assignee: SK Hynix Inc.Inventors: You-Song Kim, Jin-Ki Jung
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Patent number: 9721795Abstract: A method of forming patterns includes forming pillars and first peripheral patterns on an underlying layer, forming a separation wall layer covering sidewalls of the pillars and the first peripheral patterns, forming blocking portions on the separation wall layer to fill first openings between the first peripheral patterns, forming a block copolymer layer filling gap regions between the pillars, annealing the block copolymer layer to form first domains and a second domain surrounding the first domains, removing the first domains and removing portions of the separation wall layer to form second openings, removing the second domain and the blocking portions, removing the pillars and the first peripheral patterns to form third openings and fourth openings, and patterning the underlying layer to form fifth openings that extend from the second and third openings and sixth openings that extend from the fourth openings.Type: GrantFiled: August 3, 2015Date of Patent: August 1, 2017Assignee: SK Hynix Inc.Inventors: Jong Cheon Park, You Song Kim, Sung Kwang Kim, Jung Hyung Lee
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Patent number: 9699972Abstract: A novel strain of Pleurotus nebrodensis (Daewang No. 1, Accession No.: KACC93181P) and a method for cultivating it are provided. The novel strain of Pleurotus nebrodensis is different from the existing Pleurotus ferulae in shape and physiological characteristic, has an extra after-ripening period, can be grown at a low temperature of 22 to 25° C. and a low water content (RH) of 60 to 65%, can be cultivated in slightly acid environment of pH 5.5 to 6.5, can utilize bottle cultivation, and has a good shape not to be easily damaged in packaging. Thus, the novel strain of Pleurotus nebrodensis according to the present invention have good commercial value, are more resistant to environmental change, and can be mass produced by automation system and used for creating high value-added business in the food and agriculture industry.Type: GrantFiled: May 16, 2014Date of Patent: July 11, 2017Inventor: You Song Kim
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Patent number: 9524870Abstract: A method of fabricating a semiconductor device includes forming line patterns over a first region of an etch target layer and a pre-pad pattern over second and third regions of the etch target layer; forming pillars over the line patterns and a sacrificial pad pattern over the pre-pad pattern; forming first spacers over sidewalls of the pillars such that the first spacers contact one another and form first pre-openings therebetween; removing the pillars to form second pre-openings; cutting the line patterns through the first and second pre-openings, and forming cut patterns; etching the pre-pad pattern using the sacrificial pad pattern as an etch mask, and forming a pad pattern; and etching the etch target layer using the cut patterns and the pad pattern as an etch mask, to define first patterns and a second pattern over the first region and the second region, respectively.Type: GrantFiled: June 17, 2015Date of Patent: December 20, 2016Assignee: SK Hynix Inc.Inventors: Chun-Soo Kang, You-Song Kim
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Publication number: 20160355495Abstract: An organocatalytic kinetic resolution of racemic secondary nitroallylic alcohols via Michael/acetalization sequence to give fully substituted tetrahydropyranols is described. The process affords the products with high to excellent stereoselectivities. The highly enantioenriched, less reactive (S)-nitroallylic alcohols were isolated with good to high chemical yields. The synthetic application of the resolved substrate is shown toward the synthesis of enantioenriched (+)-(2S,3R)-3-amino-2-hydroxy-4-phenylbutyric acid.Type: ApplicationFiled: October 1, 2015Publication date: December 8, 2016Inventors: Kwunmin Chen, Ramani Gurubrahamam, You-Song Cheng
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Publication number: 20160284710Abstract: A method for fabricating a semiconductor device includes: etching a semiconductor substrate and forming a plurality of bodies separated from one another by a plurality of trenches; forming a protective layer with open parts to expose both sidewalls of each of the bodies; forming buried bit lines in the bodies by silicidizing exposed portions of the bodies through the open parts; and forming a dielectric layer to gap-fill the trenches and define air gaps between adjacent buried bit lines.Type: ApplicationFiled: June 10, 2016Publication date: September 29, 2016Inventors: You-Song KIM, Jin-Ki JUNG
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Publication number: 20160254153Abstract: A method of forming patterns includes forming pillars and first peripheral patterns on an underlying layer, forming a separation wall layer covering sidewalls of the pillars and the first peripheral patterns, forming blocking portions on the separation wall layer to fill first openings between the first peripheral patterns, forming a block copolymer layer filling gap regions between the pillars, annealing the block copolymer layer to form first domains and a second domain surrounding the first domains, removing the first domains and removing portions of the separation wall layer to form second openings, removing the second domain and the blocking portions, removing the pillars and the first peripheral patterns to form third openings and fourth openings, and patterning the underlying layer to form fifth openings that extend from the second and third openings and sixth openings that extend from the fourth openings.Type: ApplicationFiled: August 3, 2015Publication date: September 1, 2016Inventors: Jong Cheon PARK, You Song KIM, Sung Kwang KIM, Jung Hyung LEE
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Publication number: 20160196982Abstract: A method of fabricating a semiconductor device includes forming line patterns over a first region of an etch target layer and a pre-pad pattern over second and third regions of the etch target layer; forming pillars over the line patterns and a sacrificial pad pattern over the pre-pad pattern; forming first spacers over sidewalls of the pillars such that the first spacers contact one another and form first pre-openings therebetween; removing the pillars to form second pre-openings; cutting the line patterns through the first and second pre-openings, and forming cut patterns; etching the pre-pad pattern using the sacrificial pad pattern as an etch mask, and forming a pad pattern; and etching the etch target layer using the cut patterns and the pad pattern as an etch mask, to define first patterns and a second pattern over the first region and the second region, respectively.Type: ApplicationFiled: June 17, 2015Publication date: July 7, 2016Inventors: Chun-Soo KANG, You-Song KIM
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Patent number: 9351445Abstract: A novel strain of Pleurotus nebrodensis (Daewang No. 1, Accession No.: KACC93181P) and a method for cultivating it are provided. The novel strain of Pleurotus nebrodensis is different from the existing Pleurotus ferulae in shape and physiological characteristic, has an extra after-ripening period, can be grown at a low temperature of 22 to 25° C. and a low water content (RH) of 60 to 65%, can be cultivated in slightly acid environment of pH 5.5 to 6.5, can utilize bottle cultivation, and has a good shape not to be easily damaged in packaging. Thus, the novel strain of Pleurotus nebrodensis according to the present invention have good commercial value, are more resistant to environmental change, and can be mass produced by automation system.Type: GrantFiled: May 16, 2014Date of Patent: May 31, 2016Inventor: You Song Kim