Abstract: A novel strain of Pleurotus nebrodensis (Daewang No. 1, Accession No.: KACC93181P) and a method for cultivating it are provided. The novel strain of Pleurotus nebrodensis is different from the existing Pleurotus ferulae in shape and physiological characteristic, has an extra after-ripening period, can be grown at a low temperature of 22 to 25° C. and a low water content (RH) of 60 to 650, can be cultivated in slightly acid environment of pH 5.5 to 6.5, can utilize bottle cultivation, and has a good shape not to be easily damaged in packaging. Thus, the novel strain of Pleurotus nebrodensis according to the present invention have good commercial value, are more resistant to environmental change, and can be mass produced by automation system and used for creating high value-added business in the food and agriculture industry.

Abstract: A novel strain of Pleurotus nebrodensis (Daewang No. 1, Accession No.: KACC93181P) and a method for cultivating it are provided. The novel strain of Pleurotus nebrodensis is different from the existing Pleurotus ferulae in shape and physiological characteristic, has an extra after-ripening period, can be grown at a low temperature of 22 to 25° C. and a low water content (RH) of 60 to 650, can be cultivated in slightly acid environment of pH 5.5 to 6.5, can utilize bottle cultivation, and has a good shape not to be easily damaged in packaging. Thus, the novel strain of Pleurotus nebrodensis according to the present invention have good commercial value, are more resistant to environmental change, and can be mass produced by automation system.

Abstract: Provided is a magnetic anisotropy multilayer including a plurality of CoFeSiB/Pt layers used in a magnetic random access memory. The magnetic anisotropy multilayer includes a first Pt/CoFeSiB layer, and a second Pt/CoFeSiB layer formed on the first Pt/CoFeSiB layer.

Abstract: A method for fabricating a semiconductor device includes forming a plurality of first trenches by etching a substrate, forming first spacers covering both sidewalls of each of the first trenches, forming a plurality of second trenches by etching a bottom of each of the first trenches, forming second spacers covering both sidewalls of each of the second trenches, forming a plurality of third trenches by etching a bottom of each of the second trenches, forming an insulation layer covering exposed surfaces of the plurality of the substrate, and forming a contact which exposes one sidewall of each of the second trenches by selectively removing the second spacers.

Abstract: Provided are magnetic core-ceramic shell (e.g., magnetite (Fe3O4) core-calcium phosphate (Ca3(PO4)2) shell) nanocrystals with high crystallization degree, uniform size, and high chemical stability and a method for synthesizing the same. A core-shell structure is synthesized in a process of forming magnetite seeds corresponding to cores by the reduction of magnetite precursors and then, sequentially, coating the magnetite with Ca3(PO4)2 by the reduction of Ca3(PO4)2 precursors.

Abstract: Provided is a magnetic anisotropy multilayer including a plurality of CoFeSiB/Pt layers used in a magnetic random access memory. The magnetic anisotropy multilayer includes a first Pt/CoFeSiB layer, and a second Pt/CoFeSiB layer formed on the first Pt/CoFeSiB layer.

Abstract: A method for fabricating a semiconductor device includes: etching a semiconductor substrate and forming a plurality of bodies separated from one another by a plurality of trenches; forming a protective layer with open parts to expose both sidewalls of each of the bodies; forming buried bit lines in the bodies by silicidizing exposed portions of the bodies through the open parts; and forming a dielectric layer to gap-fill the trenches and define air gaps between adjacent buried bit lines.

Abstract: Provided is a magnetic anisotropy multilayer including a plurality of CoFeSiB/Pt layers used in a magnetic random access memory. The magnetic anisotropy multilayer includes a first Pt/CoFeSiB layer, and a second Pt/CoFeSiB layer formed on the first Pt/CoFeSiB layer.

Abstract: A method for fabricating a semiconductor device includes forming a plurality of first trenches by etching a substrate, forming first spacers covering both sidewalls of each of the first trenches, forming a plurality of second trenches by etching a bottom of each of the first trenches, forming second spacers covering both sidewalls of each of the second trenches, forming a plurality of third trenches by etching a bottom of each of the second trenches, forming an insulation layer covering exposed surfaces of the plurality of the substrate, and forming a contact which exposes one sidewall of each of the second trenches by selectively removing the second spacers.

Abstract: Provided are magnetic core-ceramic shell (e.g., magnetite (Fe3O4) core-calcium phosphate (Ca3(PO4)2) shell) nanocrystals with high crystallization degree, uniform size, and high chemical stability and a method for synthesizing the same. A core-shell structure is synthesized in a process of forming magnetite seeds corresponding to cores by the reduction of magnetite precursors and then, sequentially, coating the magnetite with Ca3(PO4)2 by the reduction of Ca3(PO4)2 precursors.

Abstract: Provided is a magnetic anisotropy multilayer including a plurality of CoFeSiB/Pt layers used in a magnetic random access memory. The magnetic anisotropy multilayer includes a first Pt/CoFeSiB layer, and a second Pt/CoFeSiB layer formed on the first Pt/CoFeSiB layer.