Abstract: A method and apparatus for plating a metal layer onto a substrate is provided. The plating apparatus includes two or more segments of an anode and an auxiliary electrode. The plating method includes a first stage of plating a thin metal seed uniformly in the center of the substrate and near the edges of the substrate before metal gap filling and bulk metal plating are performed. The thin metal seed is plated on the substrate surface by applying a current pulse provided by a first power supply and a second power supply which are in electrical communication in reverse polarity with one segment of the anode and the auxiliary electrode. Thereafter, gap filling of features is performed by applying a second current pulse where current is provided to all segments of the anode.

Abstract: A polishing device having a table connected to a traction drive type reduction gear. The reduction gear includes an externally contacting shaft formed in a ring-shaped hollow cylinder and arranged at the center; a plurality of intermediate shafts which are equidistantly disposed at the circumference of the externally contacting shaft, at least one of which is an input shaft; and an internally contacting cylinder with which the intermediate shafts internally contact, and under free conditions, the externally contacting shaft formed in a hollow cylinder has a diameter which is a little bit larger than a diameter of an imaginary circle which externally contacts with a plurality of intermediate shafts whereby pressing load is created by means of deformation of the hollow cylinder.

Abstract: Embodiments of the invention teach a method for depositing a copper seed layer to a substrate surface, generally to a barrier layer. The method includes placing the substrate surface into a copper solution, wherein the copper solution includes complexed copper ions. A current or bias is applied across the substrate surface and the complexed copper ions are reduced to deposit the copper seed layer onto the barrier layer.

Abstract: Embodiments of the invention generally include a method and intermediate plating solution for plating metal onto a substrate surface. The method generally includes filling the features and/or growing a film layer on the field areas by plating a metal from a first solution on a seed layer under an applied first current, wherein the first solution includes an acid in an amount sufficient to provide a first solution pH of about 6 or less, copper ions, and at least one suppressor. The method may further include substantially filling features by plating metal ions from a second solution onto the substrate under an applied second current to form a metal layer, wherein the second solution includes an acid in an amount sufficient to provide a second solution pH of from about 0.

Abstract: A microstructured or nanostructured multi-component ceramic comprises (a) a major ceramic phase comprising a ceramic oxide composite; (b) a ceramic oxide additive; and (c) a rare earth ceramic oxide additive, wherein the total of the additives (b) and (c) comprise from about 0.1 weight percent to less than 50 weight percent based on the total weight the multi-component ceramic composite. In another embodiment, a microstructured or nanostructured multi-component ceramic comprises (a) a major ceramic oxide phase comprising a ceramic oxide composite; and either (b) a ceramic oxide additive or (c) a rare earth ceramic oxide additive, wherein amount of the additive (b) or (c) comprises from about 0.1 weight percent to less than 50 weight percent based on the total weight the multi-component ceramic composite. Such ceramics are useful as bulk materials or as feedstocks for thermal spray.

Abstract: An erosion-resistant article for use as a component in plasma process chamber. The erosion-resistant article comprises a support and an oxide coating comprising yttrium, which is disposed over the support. The support and the oxide coating preferably have material compositions that differ from one another in coefficient of thermal expansion by no more than 5×10−6/K. Preferred oxide coating compositions include yttria and yttrium aluminum garnet. Preferred supports include alumina supports and aluminum-silicon carbide supports.

Abstract: A method for the deposition of solid lubricant coatings onto a substrate, comprising thermally spraying a powder comprising agglomerates of a solid lubricant coated with sulfur. Preferably, the solid lubricant is a sulfide. The coatings find particular utility on rollers used in the manufacture of steel.

Abstract: The addition of small amounts of CeO2 and Cr to intermetallic compositions of NiAl and FeAl improves ductility, thermal stability, thermal shock resistance, and resistance to oxidation, sulphidization and carburization.

Abstract: A semiconductor wafer support chuck having small diameter gas distribution ports for heat transfer gas. The diameter ports inhibit plasma ignition in heat transfer gas distribution channels. The ports are less than 20 mils in diameter less than 3 mm in length. The short length of the ports facilitates fabrication of multiple ports of very small diameter. The ports communicate with a gas distribution plenum integrated into the body of the chuck beneath a wafer support surface. The plenum has radial channels and a peripheral groove for distributing heat transfer gas to the wafer support surface.

Abstract: A magnetic assembly for a plasma processing chamber includes an annular housing having a radially outward face and a radially inwardly facing opening, a cover plate to seal the radially inwardly facing opening, and a plurality of magnets in the annular housing. The magnets may be in preassembled modules that abut one another in a ring configuration within the annular housing. A plasma processing chamber using the magnetic assembly includes a substrate support that can fit in an inner radius of the magnetic assembly, a gas supply to maintain process gas at a pressure in the chamber, a gas energizer to energize the process gas, and an exhaust to exhaust the process gas.

Abstract: A chamber 30 for processing a substrate 25 comprises a support 55 including an electrode 70 at least partially covered by a dielectric 60 that is permeable to electromagnetic energy. The electrode 70 may be chargeable to electrostatically hold the substrate 25, to couple energy to a gas in the chamber 30, or both. A base 90 below the support 55 comprises a slot 95 that may be adapted to serve as a thermal expansion slot to reduce thermal stresses.

Abstract: An electrostatic chuck 55 for holding a substrate 30 comprises an electrostatic member 100 made from a dielectric 115 covering an electrode 105 that is chargeable to electrostatically hold the substrate 30. A base 175 that includes a heater 235 is joined to the electrostatic member 100. The base may be made from a composite material, such as a porous ceramic infiltrated with the metal, and may be joined to the electrostatic member by a bond layer.

Abstract: A microstructured or nanostructured multi-component ceramic comprises (a) a major ceramic phase comprising a ceramic oxide composite; (b) a ceramic oxide additive; and (c) a rare earth ceramic oxide additive, wherein the total of the additives (b) and (c) comprise from about 0.1 weight percent to less than 50 weight percent based on the total weight the multi-component ceramic composite. In another embodiment, a microstructured or nanostructured multi-component ceramic comprises (a) a major ceramic oxide phase comprising a ceramic oxide composite; and either (b) a ceramic oxide additive or (c) a rare earth ceramic oxide additive, wherein amount of the additive (b) or (c) comprises from about 0.1 weight percent to less than 50 weight percent based on the total weight the multi-component ceramic composite. Such ceramics are useful as bulk materials or as feedstocks for thermal spray.

Abstract: A substrate support 55 comprises first, second and third sections 88, 90, 92 connected to one another by first and second bonds 106, 108, one of the sections comprises a surface 75 adapted to receive a substrate 25. The first bond 106 comprises a first bonding material and the second bond 108 comprises a second bonding material. In one version, the first bonding material is capable of bonding surfaces when heated to a first temperature and the second bonding material is capable of bonding surfaces when heated to a second temperature.

Abstract: An electrostatic chuck for holding a substrate has an electrostatic member having a dielectric covering an electrode that is chargeable to electrostatically hold the substrate. The bond layer has a metal layer that is infiltrated or brazed between the electrostatic member and the base. The base may be a composite of a ceramic and metal, the composite having a coefficient of thermal expansion within about ±30% of a coefficient of thermal expansion of the electrostatic member. The base may also have a heater.

Abstract: A ceramic substrate support and methods for fabricating the same are provided. In one embodiment, a ceramic substrate support for supporting a substrate includes a ceramic body and a porous member disposed therein. The ceramic body generally has an upper portion and a lower portion. The upper portion includes a support surface while the lower portion includes a bottom surface. At least one passage is disposed in the lower portion of the ceramic body. A first end of the passage is at least partially closed by the upper portion of the ceramic body. At least one outlet is disposed through the portion of the ceramic body through the upper portion of the ceramic body and fluidly couples the passage to the support surface.

Abstract: An electrostatic chuck 55 comprises an electrical connector 140 which is connected to the electrode 105 to conduct an electrical charge to the electrode 105. The electrical connector 140 comprises a refractory metal having a melting temperature of at least about 1500° C., such as for example, tungsten, titanium, nickel, tantalum, molybdenum, or alloys thereof. Preferably, the electrical connector 140 is bonded to the electrode 105 by a metal having a softening temperature of less than about 600° C., such as aluminum, indium, or low melting point alloys.

Abstract: A rotary drive device of a polishing device such as a polishing table, a table for CMP or a rotary drive device of a polisher which is used to flatten an end face of a semiconductor wafer or an end face of liquid crystal glass, wherein disposed is a traction drive type reduction gear, which comprises: an externally contacting shaft formed in a ring-shaped hollow cylinder and arranged at the center; a plurality of intermediate shafts which are equidistantly disposed at the circumference of the externally contacting shaft, and at least one of which is an input shaft; and an internally contacting cylinder with which the intermediate shafts internally contact, and under free conditions, the externally contacting shaft formed in a hollow cylinder has a diameter which is a little bit larger than a diameter of an imaginary circle which externally contacts with a plurality of intermediate shafts whereby pressing load is created by means of deformation of the hollow cylinder.

Abstract: An electrostatic chuck for holding a substrate has an electrostatic member having a dielectric covering an electrode that is chargeable to electrostatically hold the substrate. The bond layer has a metal layer that is infiltrated or brazed between the electrostatic member and the base. The base may be a composite of a ceramic and metal, the composite having a coefficient of thermal expansion within about ±30% of a coefficient of thermal expansion of the electrostatic member. The base may also have a heater.

Abstract: An electrostatic chuck 55 comprises an electrostatic member 100 including a dielectric 115 having a surface 120 adapted to receive a substrate 30. The dielectric 115 covers an electrode 105 that is chargeable to electrostatically hold the substrate 30. The base 175 comprises a composite of a plurality of materials, such as, ceramic and metal, for example silicon carbide and aluminum. Optionally, a support 190 can be provided to support the base 175.