Abstract: A battery includes a battery element, a housing body, and a valve device. The housing body houses the battery element. The valve device is in communication with the inside of the housing body. Heat-sealable resin layers face each other in a peripheral edge portion of the housing body. A joined edge portion in which the mutually facing heat-sealable resin layers are fused together is formed in the peripheral edge portion of the housing body. The valve device is configured to reduce an internal pressure of the housing body if the internal pressure is increased due to gas generated in the housing body. The valve device includes a first portion that is located on an outer side of an edge of the joined edge portion and a second portion that is sandwiched between the heat-sealable resin layers in the joined edge portion.

Abstract: A battery includes a battery element, a housing body, and a valve device. The housing body is constituted by at least one laminate including at least a base material layer, a barrier layer, and a heat-sealable resin layer layered in that order and houses the battery element. The valve device is in communication with the inside of the housing body. A joined edge portion in which the mutually facing heat-sealable resin layers are fused together is formed in a peripheral edge portion of the housing body. The valve device includes a first portion and a second portion. A valve mechanism configured to reduce the internal pressure of the housing body if the internal pressure is increased due to gas generated in the housing body is formed in the first portion. An air passage configured to guide gas generated in the housing body toward the valve mechanism is formed in the second portion. The first portion is located on an outer side of an edge of the joined edge portion.

Abstract: An amplifier may include a chamber, and first and second mirrors. The chamber may include a pair of discharge electrodes opposed to each other in a first direction, a laser exciting medium, an input window allowing seed light to pass therethrough into the chamber, and an output window allowing amplified laser light to pass therethrough to outside in a second direction intersecting with the first direction. The first and second mirrors may each include a reflection region, and be opposed to each other in a third direction intersecting with the first direction with the pair of discharge electrodes in between. A projected image of the reflection region of the first mirror in the second direction and a projected image of the reflection region of the second mirror in the second direction may provide a gap of a size equal to or greater than zero in between.

Abstract: A target output device may include: a main body for storing a target material; a nozzle unit, connected to the main body, for outputting the target material as a target; an electrode unit provided so as to face the nozzle unit; a voltage control unit that applies predetermined voltage between the electrode unit and the target material to generate electrostatic force therebetween for pulling out the target material through the nozzle unit; a pressure control unit that applies predetermined pressure to the target material; and an output control unit that causes the target to be outputted through the nozzle unit by controlling signal output timing of each of a first timing signal and a second timing signal, the first timing signal causing the voltage control unit to apply the predetermined voltage between the target material and the electrode unit at first timing, and the second timing signal causing the pressure control unit to apply the predetermined pressure to the target material at second timing.

Abstract: An extreme ultraviolet light source apparatus, which is to generate an extreme ultraviolet light by irradiating a target with a main pulse laser light after irradiating the target with a prepulse laser light, the extreme ultraviolet light source apparatus comprises: a prepulse laser light source generating a pre-plasma by irradiating the target with the prepulse laser light while a part of the target remains, the pre-plasma being generated at a different region from a target region, the different region being located on an incident side of the prepulse laser light; and a main pulse laser light source generating the extreme ultraviolet light by irradiating the pre-plasma with the main pulse laser light.

Abstract: An extreme ultraviolet light source apparatus, which is to generate an extreme ultraviolet light by irradiating a target with a main pulse laser light after irradiating the target with a prepulse laser light, the extreme ultraviolet light source apparatus comprises: a prepulse laser light source generating a pre-plasma by irradiating the target with the prepulse laser light while a part of the target remains, the pre-plasma being generated at a different region from a target region, the different region being located on an incident side of the prepulse laser light; and a main pulse laser light source generating the extreme ultraviolet light by irradiating the pre-plasma with the main pulse laser light.

Abstract: An extreme ultraviolet light source apparatus, which is to generate an extreme ultraviolet light by irradiating a target with a main pulse laser light after irradiating the target with a prepulse laser light, the extreme ultraviolet light source apparatus comprises: a prepulse laser light source generating a pre-plasma by irradiating the target with the prepulse laser light while a part of the target remains, the pre-plasma being generated at a different region from a target region, the different region being located on an incident side of the prepulse laser light; and a main pulse laser light source generating the extreme ultraviolet light by irradiating the pre-plasma with the main pulse laser light.

Abstract: A target collection device may include a collection container having an opening through which a target material is collected into the collection container, and a temperature adjuster configured to adjust a temperature of the collection container to a temperature that is equal to or higher than a melting point of the target material. The target collection device may be part of an extreme ultraviolet light generation apparatus. Methods of target collection are also provided.

Abstract: An extreme ultraviolet light source apparatus, which is to generate an extreme ultraviolet light by irradiating a target with a main pulse laser light after irradiating the target with a prepulse laser light, the extreme ultraviolet light source apparatus comprises: a prepulse laser light source generating a pre-plasma by irradiating the target with the prepulse laser light while a part of the target remains, the pre-plasma being generated at a different region from a target region, the different region being located on an incident side of the prepulse laser light; and a main pulse laser light source generating the extreme ultraviolet light by irradiating the pre-plasma with the main pulse laser light.

Abstract: An extreme ultraviolet light source apparatus, which is to generate an extreme ultraviolet light by irradiating a target with a main pulse laser light after irradiating the target with a prepulse laser light, the extreme ultraviolet light source apparatus comprises: a prepulse laser light source generating a pre-plasma by irradiating the target with the prepulse laser light while a part of the target remains, the pre-plasma being generated at a different region from a target region, the different region being located on an incident side of the prepulse laser light; and a main pulse laser light source generating the extreme ultraviolet light by irradiating the pre-plasma with the main pulse laser light.

Abstract: A chamber apparatus is used in combination with a laser apparatus. The chamber apparatus includes a chamber with an inlet. The inlet is configured for introducing a laser beam into the chamber. A target supply unit is provided to the chamber to supply a target material into the chamber. The target supply unit may electrically be isolated from the chamber. A potential control unit is connected to at least the target supply unit, and configured to control the supply of the target material.

Abstract: A target output device may include: a main body for storing a target material; a nozzle unit, connected to the main body, for outputting the target material as a target; an electrode unit provided so as to face the nozzle unit; a voltage control unit that applies predetermined voltage between the electrode unit and the target material to generate electrostatic force therebetween for pulling out the target material through the nozzle unit; a pressure control unit that applies predetermined pressure to the target material; and an output control unit that causes the target to be outputted through the nozzle unit by controlling signal output timing of each of a first timing signal and a second timing signal, the first timing signal causing the voltage control unit to apply the predetermined voltage between the target material and the electrode unit at first timing, and the second timing signal causing the pressure control unit to apply the predetermined pressure to the target material at second timing.

Abstract: An extreme ultraviolet light source apparatus, which is to generate an extreme ultraviolet light by irradiating a target with a main pulse laser light after irradiating the target with a prepulse laser light, the extreme ultraviolet light source apparatus comprises: a prepulse laser light source generating a pre-plasma by irradiating the target with the prepulse laser light while a part of the target remains, the pre-plasma being generated at a different region from a target region, the different region being located on an incident side of the prepulse laser light; and a main pulse laser light source generating the extreme ultraviolet light by irradiating the pre-plasma with the main pulse laser light.

Abstract: A semiconductor device includes an interlayer insulating film formed on or over a semiconductor substrate. An opening is formed in the interlayer insulating film and reaches a lower layer metal wiring conductor. A metal plug is formed by filling the opening with Cu containing metal via a barrier metal. The interlayer insulating film includes the insulating film which includes a carbon containing silicon oxide (SiOCH) film which has Si—CH2 bond in the carbon containing silicon oxide film. The proportion of Si—CH2 bond (1360 cm-1) to Si—CH3 bond (1270 cm-1) in the insulating film is in a range from 0.03 to 0.05 measured as a peak height ratio of FTIR spectrum.

Abstract: A semiconductor device includes an interlayer insulating film formed on or over a semiconductor substrate. An opening is formed in the interlayer insulating film and reaches a lower layer metal wiring conductor. A metal plug is formed by filling the opening with Cu containing metal via a barrier metal. The interlayer insulating film includes the insulating film which includes a carbon containing silicon oxide (SiOCH) film which has Si—CH2 bond in the carbon containing silicon oxide film. The proportion of Si—CH2 bond (1360 cm-1) to Si—CH3 bond (1270 cm-1) in the insulating film is in a range from 0.03 to 0.05 measured as a peak height ratio of FTIR spectrum.

Abstract: An insulating film used for an interlayer insulating film of a semiconductor device and having a low dielectric constant. The insulating film comprises a carbon containing silicon oxide (SiOCH) film which has Si—CH2 bond therein. The proportion of Si—CH2 bond (1360 cm?1) to Si—CH3 bond (1270 cm?1) in the insulating film is preferably in a range from 0.03 to 0.05 measured as a peak height ratio of FTIR spectrum. The insulating film according to the present invention has higher ashing tolerance and improved adhesion to SiO2 film, when compared with the conventional SiOCH film which only has CH3 group.

Abstract: For the purpose of providing a discharge excitation type pulse laser apparatus capable of reducing disturbance of the discharge space caused by shock waves, the discharge excitation type pulse laser apparatus according to the present invention is designed for generating a pulsed main discharge by applying a high voltage between main electrodes (14, 15) including a cathode (15) and an anode (14) arranged in opposition to each other, and thereby exciting a laser gas in a discharge space (37) defined between the main electrodes to oscillate laser light (21), and characterized in that no reflector larger than a prescribed size is provided on a surface within a prescribed surface distance (LC) from the discharge space (37), and an insulating cathode insulating member (54) that is inclined such that the cathode (15) side end is highest is arranged on at least one of the upstream and downstream sides of the cathode (15) in close contact with the cathode (15).

Abstract: An insulating film used for an interlayer insulating film of a semiconductor device and having a low dielectric constant. The insulating film comprises a carbon containing silicon oxide (SiOCH) film which has Si—CH2 bond therein. The proportion of Si—CH2 bond (1360 cm?1) to Si—CH3 bond (1270 cm?1) in the insulating film is preferably in a range from 0.03 to 0.05 measured as a peak height ratio of FTIR spectrum. The insulating film according to the present invention has higher ashing tolerance and improved adhesion to SiO2 film, when compared with the conventional SiOCH film which only has CH3 group.

Abstract: An insulating film used for an interlayer insulating film of a semiconductor device and having a low dielectric constant. The insulating film comprises a carbon containing silicon oxide (SiOCH) film which has Si—CH2 bond therein. The proportion of Si—CH2 bond (1360 cm?1) to Si—CH3 bond (1270 cm?1) in the insulating film is preferably in a range from 0.03 to 0.05 measured as a peak height ratio of FTIR spectrum. The insulating film according to the present invention has higher ashing tolerance and improved adhesion to SiO2 film, when compared with the conventional SiOCH film which only has CH3 group.

Abstract: For the purpose of providing a discharge excitation type pulse laser apparatus capable of reducing disturbance of the discharge space caused by shock waves, the discharge excitation type pulse laser apparatus according to the present invention is designed for generating a pulsed main discharge by applying a high voltage between main electrodes (14, 15) including a cathode (15) and an anode (14) arranged in opposition to each other, and thereby exciting a laser gas in a discharge space (37) defined between the main electrodes to oscillate laser light (21), and characterized in that no reflector larger than a prescribed size is provided on a surface within a prescribed surface distance (LC) from the discharge space (37), and an insulating cathode insulating member (54) that is inclined such that the cathode (15) side end is highest is arranged on at least one of the upstream and downstream sides of the cathode (15) in close contact with the cathode (15).