Abstract: The present invention relates to a long pulse gas laser apparatus for lithography further improved in the laser oscillation efficiency and stability increased by addition of xenon gas. A gas laser apparatus for lithography has a pair of discharge electrodes 2 provided in a laser chamber 1 and emits laser beam having a laser pulse width (Tis) of not less than 40 ns by exciting a laser gas sealed in the laser chamber 1 by electric discharge between the pair of discharge electrodes 2, the laser gas containing xenon in an amount not less than 2 ppm and not more than 100 ppm in partial pressure ratio. The laser gas has been heated at least when the laser beam is emitted.

Abstract: An insulating film used for an interlayer insulating film of a semiconductor device and having a low dielectric constant. The insulating film comprises a carbon containing silicon oxide (SiOCH) film which has Si—CH2 bond therein. The proportion of Si—CH2 bond (1360 cm?1) to Si—CH3 bond (1270 cm?1) in the insulating film is preferably in a range from 0.03 to 0.05 measured as a peak height ratio of FTIR spectrum. The insulating film according to the present invention has higher ashing tolerance and improved adhesion to SiO2 film, when compared with the conventional SiOCH film which only has CH3 group.

Abstract: The present invention relates to a long pulse gas laser apparatus for lithography further improved in the laser oscillation efficiency and stability increased by addition of xenon gas. A gas laser apparatus for lithography has a pair of discharge electrodes 2 provided in a laser chamber 1 and emits laser beam having a laser pulse width (Tis) of not less than 40 ns by exciting a laser gas sealed in the laser chamber 1 by electric discharge between the pair of discharge electrodes 2, the laser gas containing xenon in an amount not less than 2 ppm and not more than 100 ppm in partial pressure ratio. The laser gas has been heated at least when the laser beam is emitted.

Abstract: The present invention relates to a long pulse gas laser apparatus for lithography further improved in the laser oscillation efficiency and stability increased by addition of xenon gas. A gas laser apparatus for lithography has a pair of discharge electrodes 2 provided in a laser chamber 1 and emits laser beam having a laser pulse width (Tis) of not less than 40 ns by exciting a laser gas sealed in the laser chamber 1 by electric discharge between the pair of discharge electrodes 2, the laser gas containing xenon in an amount not less than 2 ppm and not more than 100 ppm in partial pressure ratio. The laser gas has been heated at least when the laser beam is emitted.