Patents by Inventor Youjun Chen
Youjun Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7973349Abstract: Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers. Each free ferromagnetic layer can include two or more layers and may be a multilayered free ferromagnetic stack that includes first and second ferromagnetic layers and a non-magnetic spacer between the first and second ferromagnetic layers.Type: GrantFiled: August 1, 2006Date of Patent: July 5, 2011Assignee: Grandis Inc.Inventors: Yiming Huai, Zhitao Diao, Eugene Youjun Chen
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Patent number: 7957754Abstract: A method for authenticating a Short Message (SM) calling party, including: if a Signal Relay Function for support of Mobile Number Portability (MNP-SRF) module detects a calling party number carried in an SM belongs to its serving network after receiving a Mobile Originated (MO) SM, the MNP_SRF module adds an identifier of the MNP_SRF module's network to the calling party number. A Short Message Serving Center (SMSC) determines whether the SM passes calling party authentication according to the fact that whether the calling party number carries an identifier of the SMSC's network. The invention provides a system for authenticating an SM calling party, including: a Mobile Switching Center (MSC), a calling MNP_SRF module, a Number Portability Database (NPDB) and a Short Message Serving Center (SMSC). The invention may avoid a mobile number having subscribed to a new network from using resources of the SMSC of a network to which the subscription has been canceled.Type: GrantFiled: January 12, 2007Date of Patent: June 7, 2011Assignee: Huawei Technologies Co., Ltd.Inventors: Youjun Chen, Zujian Li, Guofan Tong, Weihua Ding
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Patent number: 7916433Abstract: A method and system for providing a magnetic element are described. The method and system include providing a pinned layer, a barrier layer, and a free layer. The free layer includes a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first ferromagnetic layer and the second ferromagnetic layer. The barrier layer resides between the pinned layer and the free layer and includes MgO. The first ferromagnetic layer resides between the barrier layer and the intermediate layer. The first ferromagnetic layer includes at least one of CoFeX and CoNiFeX, with X being selected from the group of B, P, Si, Nb, Zr, Hf, Ta, Ti, and being greater than zero atomic percent and not more than thirty atomic percent. The first ferromagnetic layer is ferromagnetically coupled with the second ferromagnetic layer.Type: GrantFiled: June 15, 2010Date of Patent: March 29, 2011Assignee: Grandis, Inc.Inventors: Yiming Huai, Zhitao Diao, Eugene Youjun Chen
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Publication number: 20110064969Abstract: Techniques and magnetic devices associated with a magnetic element that includes a fixed layer having a fixed layer magnetization and perpendicular anisotropy, a nonmagnetic spacer layer, and a free layer having a changeable free layer magnetization and perpendicular anisotropy.Type: ApplicationFiled: September 15, 2009Publication date: March 17, 2011Applicant: Grandis Inc.Inventors: Eugene Youjun Chen, Shengyuan Wang
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Patent number: 7889856Abstract: Disclosed are systems and methods for providing ring back tones in a communication network. At first, a ring back tone device for storing and playing the ring back tone customized by a subscriber is established in the communication network. Whether a subscriber is a ring back tone service register subscriber is judged with a certain triggering mode, such as intelligent network triggering, signaling interception triggering, call forwarding triggering or switching device triggering. If it is judged the subscriber is a ring back tone service registered subscriber, a connection between the originating switching device and the terminating switching device and a connection between a switching device and the ring back tone device are established. When the called terminal is idle, the ring back tone device provides a piece of customized ring back tone to the calling subscriber for replacing traditional ring back tone.Type: GrantFiled: November 15, 2005Date of Patent: February 15, 2011Assignee: Huawei Technologies Co., Ltd.Inventors: Bin Wang, Yihua Cheng, Xiaoqing Hu, Xiaojun Mo, Jihong Dong, Qian Yu, Xuanming Lu, Xiaodong Zhao, Yongfeng Cai, Junrong Xu, Guodao Yang, Youjun Chen, Zujian Li, Guofan Tong, Shichang Xiao, Yi Zhang, Jiaqing Liu, Yonghong Wu, Shiqian Li
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Patent number: 7859034Abstract: Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers to switch the magnetization of the free ferromagnetic layer.Type: GrantFiled: April 16, 2009Date of Patent: December 28, 2010Assignee: Grandis Inc.Inventors: Yiming Huai, Zhitao Diao, Eugene Youjun Chen
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Publication number: 20100247967Abstract: A method and system for providing a magnetic element are described. The method and system include providing a pinned layer, a barrier layer, and a free layer. The free layer includes a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first ferromagnetic layer and the second ferromagnetic layer. The barrier layer resides between the pinned layer and the free layer and includes MgO. The first ferromagnetic layer resides between the barrier layer and the intermediate layer. The first ferromagnetic layer includes at least one of CoFeX and CoNiFeX, with X being selected from the group of B, P, Si, Nb, Zr, Hf, Ta, Ti, and being greater than zero atomic percent and not more than thirty atomic percent. The first ferromagnetic layer is ferromagnetically coupled with the second ferromagnetic layer.Type: ApplicationFiled: June 15, 2010Publication date: September 30, 2010Applicant: GRANDIS, INC.Inventors: Yiming Huai, Zhitao Diao, Eugene Youjun Chen
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Patent number: 7791931Abstract: A method and system for providing and using a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element is programmed by write currents driven through the magnetic element in a first or second direction. In one aspect, the method and system include providing a voltage supply and a voltage pump coupled with the magnetic storage cells and the voltage supply. The voltage supply provides a supply voltage. The voltage pump provides to the selection device a bias voltage having a magnitude greater than the supply voltage. Another aspect includes providing a silicon on oxide transistor as the selection device. Another aspect includes providing to the body of the transistor a body bias voltage that is a first voltage when the transistor is off and a second voltage when the transistor is on.Type: GrantFiled: March 28, 2009Date of Patent: September 7, 2010Assignee: Grandis, Inc.Inventors: Eugene Youjun Chen, Yiming Huai
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Patent number: 7777261Abstract: Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers.Type: GrantFiled: September 20, 2005Date of Patent: August 17, 2010Assignee: Grandis Inc.Inventors: Yiming Huai, Zhitao Diao, Eugene Youjun Chen
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Patent number: 7760474Abstract: A method and system for providing a magnetic element are described. The method and system include providing a pinned layer, a barrier layer, and a free layer. The free layer includes a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first ferromagnetic layer and the second ferromagnetic layer. The barrier layer resides between the pinned layer and the free layer and includes MgO. The first ferromagnetic layer resides between the barrier layer and the intermediate layer. The first ferromagnetic layer includes at least one of CoFeX and CoNiFeX, with X being selected from the group of B, P, Si, Nb, Zr, Hf, Ta, Ti, and being greater than zero atomic percent and not more than thirty atomic percent. The first ferromagnetic layer is ferromagnetically coupled with the second ferromagnetic layer.Type: GrantFiled: July 14, 2006Date of Patent: July 20, 2010Assignee: Grandis, Inc.Inventors: Yiming Huai, Zhitao Diao, Eugene Youjun Chen
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Publication number: 20100072524Abstract: Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having a magnetic biasing layer formed next to and magnetically coupled to the free ferromagnetic layer to achieve a desired stability against fluctuations caused by, e.g., thermal fluctuations and astray fields. Stable MTJ cells with low aspect ratios can be fabricated using CMOS processing for, e.g., high-density MRAM memory devices and other devices, using the magnetic biasing layer. Such multilayer structures can be programmed using spin transfer induced switching by driving a write current perpendicular to the layers to switch the magnetization of the free ferromagnetic layer.Type: ApplicationFiled: April 16, 2009Publication date: March 25, 2010Inventors: Yiming Huai, Zhitao Diao, Eugene Youjun Chen
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Patent number: 7663848Abstract: A method and system for providing a magnetic memory are described. The method and system include providing a plurality of magnetic storage cells. Each of the magnetic storage cells includes at least one magnetic element. The magnetic element(s) includes a pinned layer, a barrier layer that is a crystalline insulator and has a first crystalline orientation, and a free layer. The free layer includes a first ferromagnetic layer, a second ferromagnetic layer, and an intermediate layer between the first and second ferromagnetic layer. The barrier layer resides between the pinned and free layers. The first ferromagnetic layer resides between the barrier layer and the intermediate layer and is ferromagnetically coupled with the second ferromagnetic layer. The intermediate layer is configured such that the first ferromagnetic layer has the first crystalline orientation and the second ferromagnetic layer has a second crystalline orientation different from the first ferromagnetic layer.Type: GrantFiled: September 20, 2006Date of Patent: February 16, 2010Assignees: Grandis, Inc., Renesas Technology CorpInventors: Yiming Huai, Zhitao Diao, Eugene Youjun Chen
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Publication number: 20090213640Abstract: A method and system for providing and using a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element is programmed by write currents driven through the magnetic element in a first or second direction. In one aspect, the method and system include providing a voltage supply and a voltage pump coupled with the magnetic storage cells and the voltage supply. The voltage supply provides a supply voltage. The voltage pump provides to the selection device a bias voltage having a magnitude greater than the supply voltage. Another aspect includes providing a silicon on oxide transistor as the selection device. Another aspect includes providing to the body of the transistor a body bias voltage that is a first voltage when the transistor is off and a second voltage when the transistor is on.Type: ApplicationFiled: March 28, 2009Publication date: August 27, 2009Applicant: Grandis, Inc.Inventors: Eugene Youjun Chen, Yiming Huai
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Patent number: 7515457Abstract: A method and system for providing and using a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element is programmed by write currents driven through the magnetic element in a first or second direction. In one aspect, the method and system include providing a voltage supply and a voltage pump coupled with the magnetic storage cells and the voltage supply. The voltage supply provides a supply voltage. The voltage pump provides to the selection device a bias voltage having a magnitude greater than the supply voltage. Another aspect includes providing a silicon on oxide transistor as the selection device. Another aspect includes providing to the body of the transistor a body bias voltage that is a first voltage when the transistor is off and a second voltage when the transistor is on.Type: GrantFiled: February 24, 2006Date of Patent: April 7, 2009Assignee: Grandis, Inc.Inventors: Eugene Youjun Chen, Yiming Huai
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Patent number: 7489541Abstract: A method and system for providing a magnetic element are disclosed. The method and system include providing a pinned layer, providing a spacer layer, and providing a free layer. The free layer is ferrimagnetic and includes at least one of a conductive ferrite, a garnet, a ferrimagnetic alloy excluding a rare earth, a heavy rare-earth-transition metal alloy, a half-metallic ferrimagnetic, and a bilayer. The bilayer includes a rare earth-transition metal alloy layer and a spin current enhancement layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.Type: GrantFiled: August 23, 2005Date of Patent: February 10, 2009Assignee: Grandis, Inc.Inventors: Mahendra Pakala, Eugene Youjun Chen, Yiming Huai
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Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density
Patent number: 7430135Abstract: Magnetic multilayer structures, such as magnetic or magnetoresistive tunnel junctions (MTJs) and spin valves, having one or more spin diffusion layers to diffuse the electron spins outside the MTJ or spin valve structure to reduce the spin transfer switching current for switching the free layer.Type: GrantFiled: December 23, 2005Date of Patent: September 30, 2008Assignee: Grandis Inc.Inventors: Yiming Huai, Zhitao Diao, Alex Panchula, Eugene Youjun Chen, Lien-Chang Wang -
Publication number: 20080205121Abstract: A method and system for providing and using a magnetic memory is described. The method and system include providing a plurality of magnetic storage cells. Each magnetic storage cell includes a magnetic element and a selection device coupled with the magnetic element. The magnetic element is programmed by write currents driven through the magnetic element in a first or second direction. In one aspect, the method and system include providing a voltage supply and a voltage pump coupled with the magnetic storage cells and the voltage supply. The voltage supply provides a supply voltage. The voltage pump provides to the selection device a bias voltage having a magnitude greater than the supply voltage. Another aspect includes providing a silicon on oxide transistor as the selection device. Another aspect includes providing to the body of the transistor a body bias voltage that is a first voltage when the transistor is off and a second voltage when the transistor is on.Type: ApplicationFiled: February 24, 2006Publication date: August 28, 2008Inventors: Eugene Youjun Chen, Yiming Huai
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Publication number: 20080151611Abstract: A method and system for providing a magnetic memory is described. The method and system include providing magnetic memory cells, local and global word lines, bit lines, and source lines. Each magnetic memory cell includes a magnetic element and a selection device connected with the magnetic element. The magnetic element is programmed by first and second write currents driven through the magnetic element in first and second directions. The local word lines are connected with the selection device of and have a first resistivity. Each global word line corresponds to a portion of the local word lines and has a resistivity lower than the first resistivity. The bit lines are connected with the magnetic element. The source lines are connected with the selection device. Each source line corresponds to a more than one of the magnetic memory cells and carries the first and second write currents.Type: ApplicationFiled: February 13, 2008Publication date: June 26, 2008Applicants: GRANDIS, INC., RENESAS TECHNOLOGY CORP.Inventors: Xiao Luo, Eugene Youjun Chen, Lien-Chang Wang, Yiming Huai
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Patent number: 7379327Abstract: A method and system for providing a magnetic memory. The magnetic memory includes magnetic storage cells in an array, bit lines, and source lines. Each magnetic storage cell includes at least one magnetic element. The magnetic element(s) are programmable by write currents driven through the magnetic element(s). Each magnetic element has free and pinned layer(s) and a dominant spacer.Type: GrantFiled: June 26, 2006Date of Patent: May 27, 2008Assignees: Grandis, Inc., Renesas Technology Corp.Inventors: Eugene Youjun Chen, Yiming Huai, Alex Fischer Panchula, Lien-Chang Wang, Xiao Luo
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Patent number: 7345912Abstract: A method and system for providing a magnetic memory is described. The method and system include providing magnetic memory cells, local and global word lines, bit lines, and source lines. Each magnetic memory cell includes a magnetic element and a selection device connected with the magnetic element. The magnetic element is programmed by first and second write currents driven through the magnetic element in first and second directions. The local word lines are connected with the selection device of and have a first resistivity. Each global word line corresponds to a portion of the local word lines and has a resistivity lower than the first resistivity. The bit lines are connected with the magnetic element. The source lines are connected with the selection device. Each source line corresponds to a more than one of the magnetic memory cells and carries the first and second write currents.Type: GrantFiled: June 1, 2006Date of Patent: March 18, 2008Assignees: Grandis, Inc., Renesas Technology Corp.Inventors: Xiao Luo, Eugene Youjun Chen, Lien-Chang Wang, Yiming Huai