Abstract: A circuit includes a first buffer configured to provide data on a signal line. The first buffer may be powered by a first power supply voltage. The circuit further includes a tri-state buffer coupled to receive the data provided on the signal line. The tri-state buffer may be powered by a second power supply voltage that has a magnitude greater than that of the first power supply voltage. During operation, the tri-state buffer may be activated for a predetermined period of time during which data is made available on the signal line.

Abstract: Semiconductor systems are provided. The semiconductor system includes a boot-up operation circuit and a timing sensor. The boot-up operation circuit transmits control data stored in a fuse array portion to a first data latch unit and a second data latch unit. The timing sensor detects timings of internal control signals to generate a restart signal. The boot-up operation circuit re-transmits the control data to the first and second data latch units.

Abstract: A circuit includes a first buffer configured to provide data on a signal line. The first buffer may be powered by a first power supply voltage. The circuit further includes a tri-state buffer coupled to receive the data provided on the signal line. The tri-state buffer may be powered by a second power supply voltage that has a magnitude greater than that of the first power supply voltage. During operation, the tri-state buffer may be activated for a predetermined period of time during which data is made available on the signal line.

Abstract: A circuit includes a plurality of buffers configured to provide data on a corresponding signal line. Each of the plurality of buffers may be coupled to a power supply voltage through a corresponding diode. A plurality of receiving circuits may be coupled to receive the data provided on a corresponding one of the plurality of signal lines. The plurality of receiving circuits may be directly powered by the power supply voltage.

Abstract: Circuits, methods, and apparatus that vary one or more attributes or parameters of a closed-loop clock circuit as a function of a characteristic of its phase error. One example provides a delay-locked loop having a loop bandwidth that can be varied as a function of its phase error. In this specific example, current phase error is determined. This determination may be made directly, either by measuring phase error, or indirectly, by determining if phase error is within one or more ranges of values. Once the phase error is determined, the loop bandwidth can be set. In one example, the loop bandwidth is set by adjusting the depth, type, or depth and type of the delay-locked loop's loop filter. In this way, large phase errors can be reduced quickly by increasing loop bandwidth, while small phase errors can be used to decrease loop bandwidth, thereby improving jitter performance.

Abstract: Circuits, methods, and apparatus that vary one or more attributes or parameters of a closed-loop clock circuit as a function of a characteristic of its phase error. One example provides a delay-locked loop having a loop bandwidth that can be varied as a function of its phase error. In this specific example, current phase error is determined. This determination may be made directly, either by measuring phase error, or indirectly, by determining if phase error is within one or more ranges of values. Once the phase error is determined, the loop bandwidth can be set. In one example, the loop bandwidth is set by adjusting the depth, type, or depth and type of the delay-locked loop's loop filter. In this way, large phase errors can be reduced quickly by increasing loop bandwidth, while small phase errors can be used to decrease loop bandwidth, thereby improving jitter performance.

Abstract: Circuits, methods, and apparatus that vary one or more attributes or parameters of a closed-loop clock circuit as a function of a characteristic of its operating frequency. One example provides a delay-locked loop having a loop bandwidth that can be varied as a function of its operating frequency. In this specific example, operating frequency is determined. This determination may be made directly, either by measuring operating frequency, or indirectly, by taking a measurement or reading, such as by reading a value for column address select latency. Once the operating frequency is determined, the loop bandwidth can be set. In one example, the loop bandwidth is set by adjusting the depth of the delay-locked loop's loop filter.

Abstract: Circuits, methods, and apparatus that vary one or more attributes or parameters of a closed-loop clock circuit as a function of a characteristic of its phase error. One example provides a delay-locked loop having a loop bandwidth that can be varied as a function of its phase error. In this specific example, current phase error is determined. This determination may be made directly, either by measuring phase error, or indirectly, by determining if phase error is within one or more ranges of values. Once the phase error is determined, the loop bandwidth can be set. In one example, the loop bandwidth is set by adjusting the depth, type, or depth and type of the delay-locked loop's loop filter. In this way, large phase errors can be reduced quickly by increasing loop bandwidth, while small phase errors can be used to decrease loop bandwidth, thereby improving jitter performance.

Abstract: Circuits, methods, and apparatus that vary one or more attributes or parameters of a closed-loop clock circuit as a function of a characteristic of its phase error. One example provides a delay-locked loop having a loop bandwidth that can be varied as a function of its phase error. In this specific example, current phase error is determined. This determination may be made directly, either by measuring phase error, or indirectly, by determining if phase error is within one or more ranges of values. Once the phase error is determined, the loop bandwidth can be set. In one example, the loop bandwidth is set by adjusting the depth, type, or depth and type of the delay-locked loop's loop filter. In this way, large phase errors can be reduced quickly by increasing loop bandwidth, while small phase errors can be used to decrease loop bandwidth, thereby improving jitter performance.

Abstract: Circuits, methods, and apparatus that vary one or more attributes or parameters of a closed-loop clock circuit as a function of a characteristic of its operating frequency. One example provides a delay-locked loop having a loop bandwidth that can be varied as a function of its operating frequency. In this specific example, operating frequency is determined. This determination may be made directly, either by measuring operating frequency, or indirectly, by taking a measurement or reading, such as by reading a value for column address select latency. Once the operating frequency is determined, the loop bandwidth can be set. In one example, the loop bandwidth is set by adjusting the depth of the delay-locked loop's loop filter.

Abstract: A memory device may include a memory core block, a data patch unit, a Cyclic Redundancy Check (CRC) generating unit, and/or a serializer. The data patch unit may be configured to patch parallel data read from the memory core block in response to a first read pulse. The CRC generating unit may be configured to generate the CRC code based on the parallel data in response to a second read pulse, the second read pulse delayed by a period of time from if the first read pulse is generated. The serializer may be configured to convert the parallel data to serial data in response to the first read pulse, and/or arrange the CRC code in a order for a number of bits of the serial data to generate a systematic code.

Abstract: A synchronous memory device, which includes a read command buffer, a replica circuit, and a latency circuit. The read command buffer provides a read signal in response to a read command. The replica circuit provides a transfer signal whose time difference with respect to the feedback clock signal is substantially identical to a period that it takes a read command buffer to provide the read signal. The latency circuit receives the read signal, and provides a latency signal having a difference of a predetermined time corresponding to CAS latency with respect to the read signal in response to the transfer signal.

Abstract: Provided are a semiconductor memory device and a method of generating a chip enable signal thereof. The device includes a plurality of memory chips and an interface chip that are stacked. Each of the memory chips includes a control signal setting unit, which sets input signals applied to first and second input nodes as less significant 2-bit control signals of n-bit control signals, performs a logic AND operation on the less significant 2-bit control signals to generate AND operated signals, performs a logic XOR operation on each of the AND operated signals and each bit signal of more significant n?2-bit input signals applied to third to n-th input nodes to set the n?2-bit control signals, outputs the signal applied to the second input node through a first output node, inverts the signal applied to the first input node to output the inverted signal through a second output node, and outputs the more significant n?2-bit input signals through third through n-th output nodes, respectively.

Abstract: A synchronous memory device, which includes a read command buffer, a replica circuit, and a latency circuit. The read command buffer provides a read signal in response to a read command. The replica circuit provides a transfer signal whose time difference with respect to the feedback clock signal is substantially identical to a period that it takes a read command buffer to provide the read signal. The latency circuit receives the read signal, and provides a latency signal having a difference of a predetermined time corresponding to CAS latency with respect to the read signal in response to the transfer signal.

Abstract: A synchronous memory device, which includes a read command buffer, a replica circuit, and a latency circuit. The read command buffer provides a read signal in response to a read command. The replica circuit provides a transfer signal whose time difference with respect to the feedback clock signal is substantially identical to a period that it takes a read command buffer to provide the read signal. The latency circuit receives the read signal, and provides a latency signal having a difference of a predetermined time corresponding to CAS latency with respect to the read signal in response to the transfer signal.

Abstract: A semiconductor memory device used in a multiprocessor system is configured to perform a partial refresh operation based on the state of an access port instead of performing a refresh operation per memory bank via a bank address. The multiprocessor system includes a plurality of processors and the memory device includes a memory cell array and a plurality of ports correspondingly connected to the plurality of processors. The memory cell array includes a plurality of memory areas having predetermined memory capacity. Each of the plurality of memory areas is assigned to at least one of the plurality of ports. Each of the plurality of memory areas is accessed by any one of at least one corresponding processors through a corresponding port. A refresh controller is disposed between the plurality of ports and the plurality of memory areas and is configured to refresh at least one memory area assigned to a port connected to a processor which is in a predetermined operating mode.

Abstract: Provided are a semiconductor memory device and a method of generating a chip enable signal thereof. The device includes a plurality of memory chips and an interface chip that are stacked. Each of the memory chips includes a control signal setting unit, which sets input signals applied to first and second input nodes as less significant 2-bit control signals of n-bit control signals, performs a logic AND operation on the less significant 2-bit control signals to generate AND operated signals, performs a logic XOR operation on each of the AND operated signals and each bit signal of more significant n?2-bit input signals applied to third to n-th input nodes to set the n?2-bit control signals, outputs the signal applied to the second input node through a first output node, inverts the signal applied to the first input node to output the inverted signal through a second output node, and outputs the more significant n?2-bit input signals through third through n-th output nodes, respectively.

Abstract: A communication system includes a first processor, a second processor, and a multi-port memory device. The multi-port memory device generates a first internal clock signal having a first frequency and a second internal clock signal having a second frequency based on an external clock signal. The multi-port memory device communicates with the first processor in a parallel interface mode synchronously with the first internal clock signal. In addition, the multi-port memory device communicates with the second processor in a serial interface mode synchronously with the second internal clock signal. Therefore, the multi-port memory device applied to the communication system may reduce a number of pins and costs.

Abstract: Each memory chip of a memory module tests a total of N data bits from X memory blocks for efficient testing and outputs N/X data bits from one of the memory blocks. A memory module includes a plurality of memory chips and a plurality of comparison units. Each comparison unit is disposed within a respective memory chip for testing a plurality of data bits from a plurality of memory blocks. In addition, each comparison unit outputs data bits from one of the memory blocks within the respective memory chip.

Abstract: A multi-port semiconductor device and method thereof are provided. In an example, the multi-port memory device may include a clock generating unit receiving an external clock signal having a given frequency and a given phase, the clock generating unit generating a plurality of local clock signals by adjusting at least one of the given frequency and given phrase of the received external clock signal such that at least one of the plurality of local clock signals have at least one of a different frequency and a different phase as compared to the given frequency and given phrase, respectively, of the received external clock signal.