Patents by Inventor Youn-Won Park

Youn-Won Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9460005
    Abstract: Storage devices including a memory device and methods of operating the storage devices are provided. The storage devices may include a controller which is configured to program first bit data and second bit data paired with the first bit data into a memory device. The first bit data may be less significant bit data than the second bit data. The controller may be configured to selectively perform or skip backup of the first bit data when programming the second bit data.
    Type: Grant
    Filed: December 4, 2013
    Date of Patent: October 4, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Hong-Suk Choi, Su-Ryun Lee, Chun-Um Kong, Youn-Won Park
  • Patent number: 9159441
    Abstract: A method of operating a memory device to guarantee program reliability and a memory system using the same are provided. The method includes backing up data stored in the memory cells connected to a first word line, performing a dummy program operation on memory cells connected to a second word line adjacent to the first word line, and performing a recharge program operation on the memory cells connected to the first word line.
    Type: Grant
    Filed: July 30, 2014
    Date of Patent: October 13, 2015
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jun Hee Kim, Hyun Sik Yun, Youn Won Park, Hee Tai Oh
  • Publication number: 20150103599
    Abstract: A method of operating a memory device to guarantee program reliability and a memory system using the same are provided. The method includes backing up data stored in the memory cells connected to a first word line, performing a dummy program operation on memory cells connected to a second word line adjacent to the first word line, and performing a recharge program operation on the memory cells connected to the first word line.
    Type: Application
    Filed: July 30, 2014
    Publication date: April 16, 2015
    Inventors: Jun Hee KIM, Hyun Sik YUN, Youn Won PARK, Hee Tai OH
  • Publication number: 20140215135
    Abstract: Provided are a memory device, a memory system, and a control method performed by the memory system. The control method includes operations of generating, by a first function block of the memory system, a main request comprising a first sub-request for a first operation that is requested by an external source and a second sub-request for a second operation that is dependent upon a processing result of the first operation; processing, by a second function block of the memory system, the first sub-request or the second sub-request; and when a processing result of the first sub-request performed by the second function block is a fail, transmitting, by a third function block of the memory system, abortion information to the first function block in response to the main request, regardless of processing the second sub-request.
    Type: Application
    Filed: January 24, 2014
    Publication date: July 31, 2014
    Inventors: Youn-Won PARK, Su-Ryun LEE, Byung-Ki LEE, Sang-Cheol LEE
  • Publication number: 20140156918
    Abstract: Storage devices including a memory device and methods of operating the storage devices are provided. The storage devices may include a controller which is configured to program first bit data and second bit data paired with the first bit data into a memory device. The first bit data may be less significant bit data than the second bit data. The controller may be configured to selectively perform or skip backup of the first bit data when programming the second bit data.
    Type: Application
    Filed: December 4, 2013
    Publication date: June 5, 2014
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Hong-Suk CHOI, Su-Ryun LEE, Chun-Um KONG, Youn-Won PARK
  • Publication number: 20140115239
    Abstract: A method of managing data in a nonvolatile memory device. The method includes providing a nonvolatile memory device having a hot region and a cold region. The hot region includes first through n-th blocks. Input pages having metadata are received from a host. The input pages are sequentially written to the first through n-th blocks. Valid pages are identified from the input pages written to the first block after the n-th block is written. The valid pages are written to the cold region.
    Type: Application
    Filed: October 17, 2013
    Publication date: April 24, 2014
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: CHUN-UM KONG, Su-Ryun Lee, Youn-Won Park, Hong-Suk Choi
  • Patent number: 5469480
    Abstract: The currently used atomic reactors has to be refueled periodically. During this refueling, the checking and repair of the major sections of the atomic reactor are carried out, and therefore, a low water level operation, i.e., mid-loop operation, is carried out for removing the residual heat. According to the present invention, a round-about pipe conduit is additionally installed between a suction pipe conduit and a discharge pipe conduit of the residual heating removing pump, and a flow rate adjusting valve is installed on the round-about pipe conduit. Thus the flow passing through the pump is maintained at the normal operation level during the mid-loop operation, while, as the residual heat is decreased, the round-about flow rate is gradually increased until the suction rate from the hot leg can be maintained at a proper level, thereby preventing the introduction of air into the residual heat removing pump.
    Type: Grant
    Filed: February 2, 1994
    Date of Patent: November 21, 1995
    Assignee: Korea Institute of Nuclear Safety
    Inventors: Youn-Won Park, Jong-Kab Kim