Patents by Inventor Young-Ahn Leem
Young-Ahn Leem has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8213478Abstract: Provided is a laser device. In the laser device, an active layer is connected to a stem core of a 1×2 splitter on a substrate, a first diffraction grating is coupled to a first twig core of the 1×2 splitter, and a second diffraction grating is coupled to a second twig core of the 1×2 splitter. An active layer-micro heater is designed to supply heat to the active layer. First and second micro heaters are designed to supply heats to the first and second diffraction gratings, respectively, thereby varying a Bragg wavelength.Type: GrantFiled: August 13, 2010Date of Patent: July 3, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Kyung Hyun Park, Namje Kim, Young Ahn Leem, Sang-Pil Han, Chul-Wook Lee, Jaeheon Shin, Eundeok Sim, Yongsoon Baek
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Publication number: 20120163821Abstract: Provided is a multi-wavelength optical source generator. The multi-wavelength optical source generator includes: a gain part generating a plurality of lights through a plurality of gain waveguides; a reflective part transmitting or reflecting lights provided from each of the plurality of gain waveguides according to a wavelength; and a multiplexing part multiplexing a plurality of lights transmitted and outputted through the reflective part.Type: ApplicationFiled: December 14, 2011Publication date: June 28, 2012Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Oh-Kee KWON, Chul-Wook Lee, Dong-Hun Lee, Young Ahn Leem, Yongsoon Baek
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Publication number: 20120153161Abstract: Provided are a THz-wave generation/detection module and a device including the same, which increase heating efficiency and are miniaturized. The module includes a photomixer chip, a lens, a PCB, and a package. The photomixer chip includes an active layer, an antenna, and a plurality of electrode pads. The lens is disposed on the photomixer chip. The PCB includes a plurality of solder balls connected to the electrode pads, under the photomixer chip. The package surrounds a bottom and side of the PCB, and dissipates heating of the active layer, which is transferred from the electrode pad of the photomixer chip to the PCB, to outside.Type: ApplicationFiled: December 2, 2011Publication date: June 21, 2012Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Sang-Pil Han, Kyung Hyun Park, Hyunsung Ko, Namje Kim, Chul-Wook Lee, Dong-Hun Lee, Young Ahn Leem
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Publication number: 20120147907Abstract: Disclosed is a terahertz wave generator which includes a dual mode semiconductor laser device configured to generate at least two laser lights having different wavelengths and to beat the generated laser lights; and a photo mixer formed on the same chip as the dual mode semiconductor laser device and to generate a continuous terahertz wave when excited by the beat laser light.Type: ApplicationFiled: September 6, 2011Publication date: June 14, 2012Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Namje KIM, Kyung Hyun PARK, Young Ahn LEEM, Hyunsung KO, Sang-Pil HAN, Chul-Wook LEE, Dong-Hun LEE
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Publication number: 20120087004Abstract: Provided is an optical comb generator including a light source, a first waveguide region, a modulation region, and a second waveguide region. The light source is configured to output single-mode light. The first waveguide region divides an output of the light source into first light and second light. The modulation region includes a first modulator and a second modulator modulating the first light and the second light respectively. The second waveguide region combines outputs of the first modulator and the second modulator to output an optical comb. Here, the first modulator and the second modulator respectively include a first quantum well and a second quantum well having an asymmetric structure with respect to each other. The light source, the first waveguide region, the modulation region, and the second waveguide region are integrated into one substrate.Type: ApplicationFiled: February 1, 2011Publication date: April 12, 2012Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Oh-Kee KWON, Chul-Wook Lee, Dong-Hun Lee, Young Ahn Leem, Young-Tak Han, Yongsoon Baek
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Patent number: 8149890Abstract: Provided is a multiple distributed feedback laser device which includes a first distributed feedback region, a modulation region, a second distributed feedback region, and an amplification region. An active layer is disposed on the substrate of the first distributed feedback region, the modulation region, the second distributed feedback region, and the amplification region. A first diffraction grating is disposed in the first distributed feedback region to be coupled to the active layer in the first distributed feedback region. A second diffraction grating is disposed in the second distributed feedback region to be coupled to the active layer in the second distributed feedback region. The multiple distributed feedback laser device further includes a first micro heater configured to supply heat to the first diffraction grating and a second micro heater configured to supply heat to the second diffraction grating.Type: GrantFiled: December 29, 2010Date of Patent: April 3, 2012Assignee: Electronics and Telecommunications Research InstituteInventors: Kyung Hyun Park, Namje Kim, Young Ahn Leem, Sang-Pil Han, Hyunsung Ko, Chul-Wook Lee, Dong-Hun Lee, Jaeheon Shin, Eundeok Sim, Yongsoon Baek
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Publication number: 20120051386Abstract: Provided are a dual mode semiconductor laser and a terahertz wave apparatus using the same. The dual mode semiconductor laser includes a distributed feedback laser structure section including a first diffraction grating on a substrate and a distributed Bragg reflector laser structure section including a second diffraction grating on the substrate. A first wavelength oscillated by the distributed feedback laser structure section and a second wavelength oscillated by the distributed Bragg reflector laser structure section are different from each other, and the distributed feedback laser structure section and the distributed Bragg reflector laser structure section share the same gain medium with each other.Type: ApplicationFiled: February 8, 2011Publication date: March 1, 2012Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Namje KIM, Kyung Hyun PARK, Young Ahn LEEM, Chul-Wook LEE, Sang-Pil HAN, Dong-Hun LEE, Min Yong JEON
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Patent number: 7995625Abstract: Provided is a resonator of a hybrid laser diode. The resonator includes: a substrate including a semiconductor layer where a hybrid waveguide, a multi-mode waveguide, and a single mode waveguide are connected in series; a compound semiconductor waveguide, provided on the hybrid waveguide of the semiconductor layer, having a tapered coupling structure at one end of the compound semiconductor waveguide, the tapered coupling structure overlapping the multi-mode waveguide partially; and a reflection part provided on one end of the single mode waveguide. The multi-mode waveguide has a narrower width than the hybrid waveguide and the single mode waveguide has a narrower width than the multi-mode waveguide.Type: GrantFiled: July 7, 2009Date of Patent: August 9, 2011Assignee: Electronics and Telecommunications Research InstituteInventors: Young Ahn Leem, Jung-Ho Song, Kisoo Kim, Gyungock Kim
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Patent number: 7974326Abstract: Provided are a hybrid laser diode for single mode operation, and a method for manufacturing the hybrid laser diode. The hybrid laser diode includes a silicon layer, an active pattern disposed on the silicon layer, and a bonding layer disposed between the silicon layer and the active pattern. Here, the bonding layer includes diffraction patterns constituting a Bragg grating.Type: GrantFiled: May 9, 2008Date of Patent: July 5, 2011Assignee: Electronics and Telecommunications Research InstituteInventors: Young-Ahn Leem, Ki-Soo Kim, Jung-Ho Song, O-Kyun Kwon, Gyung-Ock Kim
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Publication number: 20110149368Abstract: Provided are a photomixer module and a method of generating a terahertz wave. The photomixer module includes a semiconductor optical amplifier amplifying incident laser light and a photomixer that is excited by the amplified laser light to generate a continuous terahertz wave. The photomixer is formed as a single module together with the semiconductor optical amplifier.Type: ApplicationFiled: May 26, 2010Publication date: June 23, 2011Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Namje KIM, Kyung Hyun Park, Young Ahn Leem, Sang-Pil Han, Chul-Wook Lee, Eundeok Sim, Jaeheon Shin
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Publication number: 20110150018Abstract: Provided is a laser device. In the laser device, an active layer is connected to a stem core of a 1×2 splitter on a substrate, a first diffraction grating is coupled to a first twig core of the 1×2 splitter, and a second diffraction grating is coupled to a second twig core of the 1×2 splitter. An active layer-micro heater is designed to supply heat to the active layer. First and second micro heaters are designed to supply heats to the first and second diffraction gratings, respectively, thereby varying a Bragg wavelength.Type: ApplicationFiled: August 13, 2010Publication date: June 23, 2011Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Kyung Hyun PARK, Namje Kim, Young Ahn Leem, Sang-Pil Han, Chul-Wook Lee, Jaeheon Shin, Eundeok Sim, Yongsoon Baek
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Publication number: 20110142082Abstract: Provided is a fiber laser generating Terahertz wave. The fiber laser comprises: a light source generating a laser beam as a pump light; first and second resonators first and second resonators first and second resonators resonating the laser beam into first and second wavelengths; and a coupler separating and supplying the laser beam generated in the light source to the first and second resonators and again feeding back the laser beam having the first and second wavelengths resonated respectively in the first and second resonators to the light source.Type: ApplicationFiled: October 20, 2010Publication date: June 16, 2011Applicant: ELECTRONIC AND TELECOMMUNICATIONS RESEARCH INSTITUTEInventors: Min Yong JEON, Kyung Hyun Park, Namje Kim, Young Ahn Leem, Sang-Pil Han, Yongsoon Baek, Jaeheon Shin
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Patent number: 7933524Abstract: Provided are an apparatus for and a method of generating millimeter waves, in which millimeter-wave generation and frequency up-conversion can be achieved at the same time using a single device. The apparatus includes a mode-locking laser diode (LD) which has a distributed feedback (DFB) sector and a gain sector and generates high-frequency optical pulses through a passive mode locking process, a modulator which modulates an external optical signal using an electric signal and injects the modulated optical signal to the mode-locking LD to lock the optical pulses, and a radio frequency (RF) locking signaling unit which injects the electric signal to the modulator.Type: GrantFiled: August 8, 2006Date of Patent: April 26, 2011Assignees: Electronics and Telecommunications Research Institute, Industry-Academic Cooperation Foundation, Yonsei-UniversityInventors: Kyung Hyun Park, Young Ahn Leem, Kwang Hyun Lee, Woo Young Choi
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Publication number: 20110090932Abstract: Provided is a multiple distributed feedback laser device which includes a first distributed feedback region, a modulation region, a second distributed feedback region, and an amplification region. An active layer is disposed on the substrate of the first distributed feedback region, the modulation region, the second distributed feedback region, and the amplification region. A first diffraction grating is disposed in the first distributed feedback region to be coupled to the active layer in the first distributed feedback region. A second diffraction grating is disposed in the second distributed feedback region to be coupled to the active layer in the second distributed feedback region. The multiple distributed feedback laser device further includes a first micro heater configured to supply heat to the first diffraction grating and a second micro heater configured to supply heat to the second diffraction grating.Type: ApplicationFiled: December 29, 2010Publication date: April 21, 2011Inventors: Kyung Hyun PARK, Namje Kim, Young Ahn Leem, Sang-Pil Han, Hyunsung Ko, Chul-Wook Lee, Dong-Hun Lee, Jaeheon Shin, Eundeok Sim, Yongsoon Baek
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Patent number: 7924492Abstract: Provided is an optical device having an edge effect with improved phase shift and propagation loss of light without decreasing the dynamic characteristics of the optical device. The optical device includes a first semiconductor layer which is doped with a first type of conductive impurities, and has a recessed groove in an upper portion thereof; a gate insulating layer covering the groove and a portion of the first semiconductor layer; and a second semiconductor layer which covers an upper surface of the gate insulating layer and is doped with a second type of conductive impurities opposite to the first type of conductive impurities.Type: GrantFiled: April 24, 2007Date of Patent: April 12, 2011Assignee: Electronics & Telecommunications Research InstituteInventors: Hyun-Soo Kim, Jeong-Woo Park, Bongki Mheen, Young-Ahn Leem, Gyungock Kim
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Patent number: 7813388Abstract: Provided is a self-pulsating laser diode including: a distributed feedback (DFB) section serving as a reflector; a gain section connected to the DFB section and having an as-cleaved facet at one end; a phase control section interposed between the DFB section and the gain section; and an external radio frequency (RF) input portion applying an external RF signal to at least one of the DFB section and the gain section.Type: GrantFiled: October 31, 2007Date of Patent: October 12, 2010Assignee: Electronics And Telecommunications Research InstituteInventors: Kyung Hyun Park, Hyun Sung Ko, Young Ahn Leem, Min Yong Jeon, Eun Deok Sim, Sung Bock Kim
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Patent number: 7745836Abstract: Provided are a superluminescent diode with a high optical power and a broad wavelength band, and a method of fabricating the same. The superluminescent diode includes: at least one high optical confinement factor (HOCF) region; and at least one low optical confinement factor (LOCF) region having a lower optical confinement factor than the HOCF region. The method includes obtaining a difference of optical confinement factors in the HOCF region and the LOCF region through a selective area growth method, the selective area growth method using a deposition thicknesses difference of thin layers according to a width difference of openings that expose a substrate.Type: GrantFiled: May 9, 2008Date of Patent: June 29, 2010Assignee: Electronics and Telecommunications Research InstituteInventors: Jung-Ho Song, Ki-Soo Kim, Young-Ahn Leem, Gyung-Ock Kim
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Publication number: 20100142579Abstract: Provided is a resonator of a hybrid laser diode. The resonator includes: a substrate including a semiconductor layer where a hybrid waveguide, a multi-mode waveguide, and a single mode waveguide are connected in series; a compound semiconductor waveguide, provided on the hybrid waveguide of the semiconductor layer, having a tapered coupling structure at one end of the compound semiconductor waveguide, the tapered coupling structure overlapping the multi-mode waveguide partially; and a reflection part provided on one end of the single mode waveguide. The multi-mode waveguide has a narrower width than the hybrid waveguide and the single mode waveguide has a narrower width than the multi-mode waveguide.Type: ApplicationFiled: July 7, 2009Publication date: June 10, 2010Applicant: Electronics and Telecommunications Research InstituteInventors: Young Ahn LEEM, Jung-Ho SONG, Kisoo KIM, Gyungock KIM
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Patent number: 7720128Abstract: Provided are a laser diode generating passive mode locking that does not contain non-linear sector of an SA, and a method of creating an optical pulse using the same diode. The laser diode includes a DFB sector serving as a reflector and a gain sector. The gain sector is connected to the DFB sector and includes an as-cleaved facet formed at the end of the gain sector. When a current less than a threshold current is applied to the DFB sector to allow the DFB sector to operate as a reflector, passive mode locking occurs swiftly and therefore a sector of the SA is not required, which makes manufacturing simple. Also, it is possible to effectively extend a frequency variable region compared to using of the SA.Type: GrantFiled: May 22, 2006Date of Patent: May 18, 2010Assignee: Electronics and Telecommunications Research InstituteInventors: Young Ahn Leem, Eun Deok Sim, Dong Churl Kim, Kyung Hyun Park
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Patent number: 7693361Abstract: Provided is a hybrid laser diode. The hybrid laser diode includes: a silicon layer constituting a slab waveguide; and a compound semiconductor layer disposed on the silicon layer to constitute a channel waveguide.Type: GrantFiled: May 8, 2008Date of Patent: April 6, 2010Assignee: Electronics and Telecommunications Research InstituteInventors: Young-Ahn Leem, Jung-Ho Song, Ki-Soo Kim, O-Kyun Kwon, Gyung-Ock Kim