Abstract: Proposed is a substrate heating unit including: a laser generator providing a laser beam for heating a substrate; and a beam shaper processing the laser beam from the laser generator and selectively providing one of a first beam having a uniform energy distribution and a second beam having an edge-enhanced energy distribution to the substrate.

Abstract: A method of processing a substrate includes an etchant supplying operation of supplying an etchant to a substrate; a puddle operation of, by rotating the substrate at a first rotational speed, forming a liquid film of the etchant supplied to the substrate in a puddle shape; and a thickness adjusting operation of changing a rotational speed of the substrate to a rotational speed different from the first rotational speed to adjust a thickness of the liquid film of the etchant. Using the method, dispersion of the etching rate may be effectively controlled.

Abstract: The present invention provides a substrate treating facility, including: a process chamber including an annular beam emitting unit which emits an annular laser beam to a substrate and heats the substrate; and a laser beam generator configured to generate the laser beam emitted to the substrate through the annular beam emitting unit of the process chamber.

Abstract: A substrate treatment apparatus includes a substrate support unit, a chemical supply unit supplying a chemical solution onto an upper surface of a substrate supported on the substrate support unit, a laser irradiation unit applying a laser pulse to the substrate to heat the substrate, and a controller controlling the laser irradiation unit to emit the laser pulse such that the substrate is repeatedly heated and cooled to maintain a preset temperature.

Abstract: The inventive concept provides a mask treatment apparatus. The mask treatment may include a support unit that supports the mask, and a light irradiation unit that irradiate the mask with a light to adjust a critical dimension of a pattern formed in the mask, wherein the light irradiation unit includes a light source that generates the light, and a light modulation element that modulates the light generated by the light source and forms an irradiation pattern.

Abstract: Disclosed is a method of treating a substrate, the method including: supplying a liquid to the substrate, emitting a laser to the substrate supplied with the liquid to heat the substrate, and emitting imaging light for capturing the substrate to obtain an image of the substrate including a region to which the laser is emitted, in which the laser and the imaging light are emitted to the substrate through a head lens, and a divergence angle of the laser emitted from the head lens and a divergence angle of the imaging light are matched with each other.

Abstract: The present disclosure relates to an apparatus for treating a substrate. The substrate treatment apparatus includes a support unit that supports a substrate, a liquid supply unit that supplies a liquid to the substrate supported by the support unit, and a laser unit that heats the substrate supported by the support unit, wherein the laser unit includes an oscillation unit that emits a light, and a diffraction unit that separates the light into a plurality of light bundles and irradiates the substrate supported by the support unit with an adjustment light having a profile changed from a profile of the light.

Abstract: The present invention provides a substrate treating method of treating a substrate including a plurality of cells, the substrate treating method including: a liquid treating operation of supplying a treatment liquid to the substrate; and a heating operation of heating the substrate by supplying the treatment liquid and irradiating laser light to a specific region located outside a region in which the plurality of cells is provided, in which the laser light is formed to cover the specific region when viewed from the top.

Abstract: Provided is an apparatus for treating a substrate, which includes: a chamber having a treating space; a substrate support unit supporting and rotating a substrate in the treating space; a liquid supply unit supplying a chemical liquid to the substrate supported on the substrate support unit; a laser irradiation unit irradiating a laser to a bottom of the substrate supported on the substrate support unit; and a laser reflection unit coupled to the laser irradiation unit, and reflecting the laser irradiated and reflected to the bottom of the substrate, in which the laser reflection unit includes a reflection member reflecting the laser reflected from the substrate, and a driving member tilting the reflection member at a predetermined tilt angle.

Abstract: Provided are a substrate treating apparatus and a substrate treating method. The substrate treating apparatus includes: a chamber for providing a processing space; a substrate support unit provided in the processing space to support a substrate and rotate the substrate; a liquid supply unit including a chemical liquid discharge nozzle that discharges a chemical liquid to the substrate supported by the substrate support unit; and a microwave applying member for emitting microwaves to the substrate.

Abstract: The inventive concept provides a mask treating apparatus.

Abstract: The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a support unit horizontally maintaining a substrate; a laser irradiation unit for irradiating the substrate with a laser; a photo-detector for detecting an energy of a reflective light reflected from the substrate among a laser irradiated on the substrate; and a processor, and wherein the processor irradiates a first laser of a first output to the substrate, and sets a second output of a second laser for irradiating the substrate to heat the substrate, based on an energy of a first reflective light reflected from the substrate by the first laser detected from the photo-detector.

Abstract: The present invention provides a substrate treating apparatus including: a support unit for supporting and rotating a substrate on which a first pattern and a second pattern different from the first pattern are formed; a liquid supply unit for supplying a treatment liquid to the substrate supported on the support unit; and a heating unit for heating any one of the first pattern and the second pattern.

Abstract: Method and apparatus for etching a thin layer including silicon nitride formed on a substrate are disclosed. Etchant including phosphoric acid and water is supplied on the substrate so that a liquid layer is formed on the substrate. The thin layer is etched by reaction between the thin layer and the etchant. Thickness of the liquid layer is measured to detect variation in the thickness of the liquid layer while etching the thin layer. Variation in the concentration of the phosphoric acid and the water is calculated based on the variation in the thickness of the liquid layer. Water is supplied on the substrate based on the variation in the concentration of the phosphoric acid and the water so that the concentration of the phosphoric acid and the water becomes a predetermined value.

Abstract: Substrate treating equipment includes a first process chamber group including a plurality of process chambers, each of which includes a laser beam emitting unit that applies a laser beam to a substrate to heat the substrate, one laser beam generator that generates the laser beam applied to the substrate through the laser beam emitting unit of each of the plurality of process chambers included in the first process chamber group, and a beam shifting module including one or more mirrors corresponsable to the plurality of process chambers included in the first process chamber group. Each of the one or more mirrors is shifted to a position in which the mirror forms an optical path of the laser beam toward a predetermined one of the plurality of process chambers.

Abstract: The present disclosure provides a substrate treating apparatus. The substrate treating apparatus includes a support unit that supports a substrate, and a heating unit that irradiates a beam to the substrate and heat the substrate, and the heating unit further includes an irradiation part that irradiates the beam, and a rotation part that rotates the beam.

Abstract: The present disclosure provides a substrate treating apparatus. The substrate treating apparatus includes a support unit that supports a substrate, and a laser unit that irradiates a laser beam to the substrate supported by the support unit, the laser unit includes an irradiation member that irradiates the laser beam, a lens disposed on a travel path of the laser beam irradiated by the irradiation member to be rotatable, and a reflection member having an inclined surface for changing the travel path of the laser beam that passed through the lens.

Abstract: A substrate processing method and a substrate processing apparatus for removing material on a substrate are disclosed. In order to remove the material, a processing liquid including a chemical liquid and water is supplied on the substrate so that a liquid layer maintained by surface tension is formed. The material is removed from the substrate by a reaction between the material and the processing liquid. A size distribution of by-product particles formed by the reaction between the material and the processing liquid is measured by a dynamic light scattering method. A supply of the processing liquid is controlled based on the size distribution of the by-product particles.

Abstract: Proposed is a substrate heating unit including: a laser generator providing a laser beam for heating a substrate; and a beam shaper processing the laser beam from the laser generator and selectively providing one of a first beam having a uniform energy distribution and a second beam having an edge-enhanced energy distribution to the substrate.

Abstract: Method and apparatus for etching a thin layer including silicon nitride formed on a substrate are disclosed. Etchant including phosphoric acid and water is supplied on the substrate so that a liquid layer is formed on the substrate. The thin layer is etched by reaction between the thin layer and the etchant. Thickness of the liquid layer is measured to detect variation in the thickness of the liquid layer while etching the thin layer. Variation in the concentration of the phosphoric acid and the water is calculated based on the variation in the thickness of the liquid layer. Water is supplied on the substrate based on the variation in the concentration of the phosphoric acid and the water so that the concentration of the phosphoric acid and the water becomes a predetermined value.