Abstract: A semiconductor memory apparatus includes: a precharge voltage control unit configured to selectively output a bit line precharge voltage or a core voltage as a control voltage in response to a test signal; a bit line equalization unit configured to precharge a bit line to the control voltage; a sense amplifier driving control unit configured to generate a first voltage supply control signal, a second voltage supply control signal and a third voltage supply control signal in response to the test signal, a sense amplifier enable test signal, a first voltage supply signal, a second voltage supply signal and a third voltage supply signal; and a voltage supply unit configured to provide the core voltage, an external voltage and a ground voltage to a sense amplifier with an open bit line structure in response to the first to third voltage supply control signals.

Abstract: A mode determination apparatus in a semiconductor apparatus includes a first condition detection block configured to generate a first condition signal in response to a clock enable signal activated when the semiconductor apparatus enters a dynamic voltage scaling mode, a second condition detection block configured to generate a second condition signal in response to an external high voltage in the dynamic voltage scaling mode, the external high voltage having a voltage level in the dynamic voltage scaling mode different from a voltage level in a normal mode, and a signal processing block configured to generate a dynamic voltage scaling mode signal in response to the first condition signal and the second condition signal.

Abstract: A mode determination apparatus in a semiconductor apparatus includes a first condition detection block configured to generate a first condition signal in response to a clock enable signal activated when the semiconductor apparatus enters a dynamic voltage scaling mode, a second condition detection block configured to generate a second condition signal in response to an external high voltage in the dynamic voltage scaling mode, the external high voltage having a voltage level in the dynamic voltage scaling mode different from a voltage level in a normal mode, and a signal processing block configured to generate a dynamic voltage scaling mode signal in response to the first condition signal and the second condition signal.

Abstract: A semiconductor memory apparatus includes: a precharge voltage control unit configured to selectively output a bit line precharge voltage or a core voltage as a control voltage in response to a test signal; a bit line equalization unit configured to precharge a bit line to the control voltage; a sense amplifier driving control unit configured to generate a first voltage supply control signal, a second voltage supply control signal and a third voltage supply control signal in response to the test signal, a sense amplifier enable test signal, a first voltage supply signal, a second voltage supply signal and a third voltage supply signal; and a voltage supply unit configured to provide the core voltage, an external voltage and a ground voltage to a sense amplifier with an open bit line structure in response to the first to third voltage supply control signals.

Abstract: A test circuit includes a first reset pulse generator configured to generate a first reset pulse when a test mode is performed or when power is up, a test mode maintenance signal generator configured to provide a test mode maintenance signal activated in response to a predetermined consecutive test information data, the activation of the test mode maintenance signal being controlled by the first reset pulse, a second reset pulse generator configured to generate a second reset pulse when the test information data is received as a predetermined test mode reset data or when power is up, and a test mode selection signal generator configured to receive the test information data provided from the test mode maintenance signal generator and the test mode maintenance signal and to generate a specific test mode selection signal, the activation of the specific test mode selection signal being controlled by the second reset pulse.

Abstract: A semiconductor package includes an input pin that receives a first signal from the outside of the semiconductor package, a pad that is coupled to the input pin, and a test mode driving circuit that receives the first signal from the pad and outputs a plurality of test mode signals to drive a test apparatus in a semiconductor chip.

Abstract: A voltage generating circuit for semiconductor memory devices for use in avoiding the occurrence of leakage currents associated with parasitic diodes is presented. The circuit controls and stabilizes the generation of a fedback negative voltage to prevent parasitic diode malfunctions by a in a wordline driver. The voltage generating circuit includes a controller being fedback the negative voltage and detecting a potential difference between backbias voltage provided to a substrate of the cell and the negative voltage to generate a control signal. The voltage generating circuit also includes a voltage generator being fedback the negative voltage to detect a level thereof, and which subsequently generates and provides the negative voltage in response to the detected results of the negative voltage and the control signal.

Abstract: The negative voltage generating device includes a current interrupting controller, a voltage generating controller, and a negative voltage generator. The current interrupting controller outputs a current interrupting control signal in response to a control signal, which is enabled during the application of a power-up signal. The voltage generating controller compares a first reference voltage to a feedback voltage in response to the current interrupting control signal and outputs a voltage generating control signal. The negative voltage generator generates the feedback voltage and a second negative voltage by receiving the first negative voltage in response to the voltage generating control signal.

Abstract: A circuit for generating negative voltage of a semiconductor memory apparatus includes a first detecting unit configured to generate a first detecting signal by detecting a first negative voltage level, a first negative voltage generating unit configured to generate the first negative voltage in response to the first detecting signal, a second detecting unit configured to generate a second detecting signal by detecting the second negative voltage level, a timing controlling unit configured to output the second detecting signal as an enable signal when a power up signal is enabled and the first detecting signal is disabled, and a second negative voltage generating unit configured to generate the second negative voltage in response to the enable signal.

Abstract: A voltage generating circuit for semiconductor memory devices for use in avoiding the occurrence of leakage currents associated with parasitic diodes is presented. The circuit controls and stabilizes the generation of a fedback negative voltage to prevent parasitic diode malfunctions by a in a wordline driver. The voltage generating circuit includes a controller being fedback the negative voltage and detecting a potential difference between backbias voltage provided to a substrate of the cell and the negative voltage to generate a control signal. The voltage generating circuit also includes a voltage generator being fedback the negative voltage to detect a level thereof, and which subsequently generates and provides the negative voltage in response to the detected results of the negative voltage and the control signal.

Abstract: The negative voltage generating device includes a current interrupting controller, a voltage generating controller, and a negative voltage generator. The current interrupting controller outputs a current interrupting control signal in response to a control signal, which is enabled during the application of a power-up signal. The voltage generating controller compares a first reference voltage to a feedback voltage in response to the current interrupting control signal and outputs a voltage generating control signal. The negative voltage generator generates the feedback voltage and a second negative voltage by receiving the first negative voltage in response to the voltage generating control signal.

Abstract: A test circuit includes a first reset pulse generator configured to generate a first reset pulse when a test mode is performed or when power is up, a test mode maintenance signal generator configured to provide a test mode maintenance signal activated in response to a predetermined consecutive test information data, the activation of the test mode maintenance signal being controlled by the first reset pulse, a second reset pulse generator configured to generate a second reset pulse when the test information data is received as a predetermined test mode reset data or when power is up, and a test mode selection signal generator configured to receive the test information data provided from the test mode maintenance signal generator and the test mode maintenance signal and to generate a specific test mode selection signal, the activation of the specific test mode selection signal being controlled by the second reset pulse.

Abstract: A test circuit includes a first reset pulse generator configured to generate a first reset pulse when a test mode is performed or when power is up, a test mode maintenance signal generator configured to provide a test mode maintenance signal activated in response to a predetermined consecutive test information data, the activation of the test mode maintenance signal being controlled by the first reset pulse, a second reset pulse generator configured to generate a second reset pulse when the test information data is received as a predetermined test mode reset data or when power is up, and a test mode selection signal generator configured to receive the test information data provided from the test mode maintenance signal generator and the test mode maintenance signal and to generate a specific test mode selection signal, the activation of the specific test mode selection signal being controlled by the second reset pulse.

Abstract: A semiconductor package includes an input pin that receives a first signal from the outside of the semiconductor package, a pad that is coupled to the input pin, and a test mode driving circuit that receives the first signal from the pad and outputs a plurality of test mode signals to drive a test apparatus in a semiconductor chip.

Abstract: A first shifting unit outputs first shifting signals using at least one of periodic signals. A control signal generating unit outputs multiplexing control signals using an inverted clock signal; a second shifting unit that outputs second shifting signals using the at least one of periodic signals. A correcting unit outputs correction signals having an intermediate phase between the phase of the first shifting signals and the phase of the second shifting signals on the basis of a bias signal applied thereto. A combination unit combines the first shifting signals and the correction signals to output combined signals. A multiplexing unit selectively outputs the combined signals on the basis of multiplexing control signals.

Abstract: Disclosed are a semiconductor memory device with a mode register that prevents the semiconductor device from undesirably entering into a deep power down mode during the beginning of a power up and a method for controlling a deep power down mode therein. An internal power supply voltage generator generates an internal power supply voltage of the semiconductor memory device. A clock buffer buffers external clock and clock enable signals to generate internal clock and clock enable signals. A command decoder generates an intermediate deep power down mode entry signal or a mode register setting signal. A mode register setting latch circuit latches the mode register setting signal from the command decoder. A deep power down mode controller generates a final deep power down mode entry signal. A semiconductor memory device is accordingly prevented from undesirably entering into a deep power down mode during beginning of a power up.

Abstract: Disclosed are a semiconductor memory device with a mode register that prevents the semiconductor device from undesirably entering into a deep power down mode during the beginning of a power up and a method for controlling a deep power down mode therein. An internal power supply voltage generator generates an internal power supply voltage of the semiconductor memory device. A clock buffer buffers external clock and clock enable signals to generate internal clock and clock enable signals. A command decoder generates an intermediate deep power down mode entry signal or a mode register setting signal. A mode register setting latch circuit latches the mode register setting signal from the command decoder. A deep power down mode controller generates a final deep power down mode entry signal. A semiconductor memory device is accordingly prevented from undesirably entering into a deep power down mode during beginning of a power up.

Abstract: A semiconductor memory device having a redundancy circuit, includes a normal memory cell array unit, a redundancy memory cell array unit for recovering defective cells of the normal memory cell array unit, and a memory driving unit for operating the normal memory cell adjacent to the redundancy memory cell array unit immediately after a word line move time ‘tcycle’ is elasped by using address data.

Abstract: A power voltage driver circuit includes: a constant voltage generating unit for generating a first constant voltage and a second constant voltage; a clock input buffer unit using an internal step-down voltage as a power source; a control unit for receiving an operation control signal indicating the low power operation mode; a voltage comparing unit controlled in response to the output signal from the control unit, for stopping the operation in the low power operation mode, and receiving the first and second constant voltages in the other operation modes, and generating a signal by comparing and amplifying the first and second constant voltages with a reference voltage; and a driver unit controlled in response to the output signal from the control unit.

Abstract: A boosting circuit for a high voltage operation in a semiconductor memory device for preventing a transistor of a high voltage pump circuit from being destroyed due to an excessive bootstrap voltage in a pumping operation, by controlling the operation of the high voltage pump circuit according to a signal detecting that the bootstrap voltage of the high voltage pump circuit has increased above a predetermined level.