Abstract: A semiconductor package which includes a first substrate having a pre-designed pattern formed thereon; a first chip mounted by a flip chip method on one side of the first substrate; a support formed to a predetermined thickness on an edge of the first substrate; an interposer having an edge thereof placed on the support, such that the interposer covers the first substrate and forms a cavity between the interposer and the first substrate, and having a pre-designed pattern formed respectively on both sides thereof; a via penetrating the support and the interposer; a second chip mounted on one side of the interposer facing the first substrate; a second substrate placed on the other side of the interposer with at least one conductive ball positioned in-between; and a third chip mounted on the second substrate.

Abstract: A method of manufacturing a semiconductor package which includes mounting a first chip on a first substrate by a flip chip method, the first substrate having a pre-designed pattern formed thereon; forming a cavity by etching a center portion of a metal oxide layer; mounting a second chip inside the cavity; forming at least one via such that the via penetrates an edge of the metal oxide layer; placing the metal oxide layer on the first substrate such that the second chip and the first chip face each other; and placing a second substrate on the metal oxide layer, the second substrate having a third chip mounted thereon.

Abstract: Provided are a semiconductor chip package and a method of manufacturing the same. The semiconductor chip package includes a semiconductor chip including a first face having a chip pad, a second face facing the first face, and a side face connecting the first and second faces, a first lamination layer covering the second face and a portion of the side face, a second lamination layer disposed on a top surface of the first lamination layer and forming a gap having a predetermined distance from the side face, and a redistribution pattern disposed on the first face and electrically connected to the chip pad. The semiconductor package and the method of manufacturing the same achieve a high process yield and reliability.

Abstract: Disclosed herein is a die package including an encapsulated die, including: a die including pads on one side thereof; an encapsulation layer covering lateral sides of the die; a support layer covering the encapsulation layer and one side of the die; a passivation layer formed on the other side of the die such that the pads are exposed therethrough; and a redistribution layer formed on the passivation layer such that one part thereof is connected with the pad. Here, since one side of the die is supported by the support layer and the encapsulation layer is formed on only the lateral side of the die, the warpage of the die package due to the difference in thermal expansion coefficient can be minimized.

Abstract: A method of manufacturing a printed circuit board (PCB) having embedded components. The method includes: forming a cavity in one side of a dielectric substrate; inserting a first component in the cavity such that an electrode thereof faces the one side of the dielectric substrate; mounting a second component on one side of the first component such that an electrode thereof faces the same direction as the electrode of the first component; forming a first dielectric layer on one side of the dielectric substrate such that the first dielectric layer covers the second component; and forming a second dielectric layer on the other side of the dielectric substrate such that the second dielectric layer covers the first component.

Abstract: Microelectronic devices and method of forming a plurality of microelectronic devices on a semiconductor workpiece are disclosed herein. One such method includes placing a plurality of first interconnect elements on a side of a semiconductor workpiece, forming a layer on the side of the workpiece, reshaping the first interconnect elements by heating the first interconnect elements, and coupling a first portion of a plurality of individual second interconnect elements to corresponding first interconnect elements with a second portion of the individual second interconnect elements exposed.

Abstract: Disclosed herein are a wafer level package for heat dissipation and a method of manufacturing the same. The wafer level package includes a heat dissipation plate including a cavity and a hole, a die including a pad disposed in the cavity of the heat dissipation plate in a face-up manner, a thermal conductive adhesive disposed between the die and an inner wall of the cavity and disposed in the hole, and a redistribution layer connected at one end to the pad and at the other end extended. The wafer level package protects the die from external environments and enables the die to be easily flush with the heat dissipation plate.

Abstract: Microelectronic devices and method of forming a plurality of microelectronic devices on a semiconductor workpiece are disclosed herein. One such method includes placing a plurality of first interconnect elements on a side of a semiconductor workpiece, forming a layer on the side of the workpiece, reshaping the first interconnect elements by heating the first interconnect elements, and coupling a first portion of a plurality of individual second interconnect elements to corresponding first interconnect elements with a second portion of the individual second interconnect elements exposed.

Abstract: The present invention relates to a method of manufacturing a wafer level package including the steps of: preparing a substrate wafer including a plurality of pads formed on a bottom surface, a plurality of chips positioned on a top surface, and dicing lines for dividing the chips; forming external connection units on the pads; coating resin on the dicing lines by positioning masks on the substrate wafer to expose only the dicing lines; removing the masks; encapsulating the chips positioned between the resin by coating the chips with encapsulant; removing the resin coated on the dicing lines; and cutting a wafer level package along the dicing lines exposed by removing the resin into units.

Abstract: The present invention relates to a semiconductor stack package including: a printed circuit board; a first semiconductor chip mounted on the printed circuit board; a second semiconductor chip mounted on the printed circuit board in parallel with the first semiconductor chip; a first rearrangement wiring layer positioned on the first semiconductor chip; a second rearrangement wiring layer which constitutes one circuit together with the first rearrangement wiring layer and is positioned on the second semiconductor chip; and a third semiconductor chip which is electrically connected to the first and second rearrangement wiring layers and of which both ends are separately positioned on the first and second semiconductor chips.

Abstract: The present invention relates to a method of manufacturing a semiconductor package capable of simplifying a process and remarkably reducing a production cost by including the steps of: preparing a different bonded panel including at least one metal layer; forming a pad unit electrically connected to the metal layer; mounting a semiconductor chip over the different bonded panel to be electrically connected to the pad unit; sealing the semiconductor chip; forming a rearrangement wiring layer by etching the metal layer; and forming an external connection unit electrically connected to the rearrangement wiring layer.

Abstract: The present invention relates to a wafer level package and a method of manufacturing the same and a method of reusing a chip and provides a wafer level package including a chip; a removable resin layer formed to surround side surfaces and a lower surface of the chip; a molding material formed on the lower surface of the removable resin layer; a dielectric layer formed over the removable resin layer including the chip and having via holes to expose portions of the chip; redistribution lines formed on the dielectric layer including insides of the via holes to be connected to the chip; and a solder resist layer formed on the dielectric layer to expose portions of the redistribution lines. Also, the present invention provides a method of manufacturing a wafer level package and a method of reusing a chip.

Abstract: A method of manufacturing a wafer level package is disclosed, which may include: coating an insulation layer over one side of a semiconductor chip, on one side of which an electrode pad is formed, such that the electrode pad is open; forming a seed layer by depositing a conductive metal onto one side of the semiconductor chip; forming a rewiring pattern that is electrically connected with the electrode pad, by selective electroplating with the seed layer as an electrode; forming a conductive pillar that is electrically connected with the rewiring pattern, by selective electroplating with the seed layer as an electrode; and removing portions of the seed layer open to the exterior. By forming the rewiring pattern and the metal pillar using one seed layer, the manufacturing process can be simplified, whereby defects during the manufacturing process can be reduced and the reliability of the products can be improved.

Abstract: The present invention relates to a stacked wafer level package and a method of manufacturing the same. The stacked wafer level package in accordance with the present invention can improve a misalignment problem generated in a stacking process by performing a semiconductor chip mounting process, a rearrangement wiring layer forming process, the stacking process and so on after previously bonding internal connection means for interconnection between stacked electronic components to a conductive layer for forming a rearrangement wiring layer, thereby improving reliability and yield and reducing manufacturing cost.

Abstract: Disclosed herein is a dual face package and a method of manufacturing the same. The dual face package includes a semiconductor substrate including a through-electrode connected to a die pad disposed on one side of the semiconductor substrate, and a lower redistribution layer disposed on another side thereof and connected to the through-electrode, an insulating layer including a post electrode connected to the through-electrode, and an upper redistribution layer disposed on one side thereof and connected to the post electrode, and an adhesive layer disposed on the one side of the semiconductor substrate so as to attach the insulating layer to the semiconductor substrate such that the through-electrode is connected to the post electrode. The dual face package is produced by a simple process and is applicable to a large diameter wafer level package.

Abstract: Disclosed are a semiconductor package and a manufacturing method thereof. The semiconductor package can include a semiconductor substrate, having one surface on which a conductive pad is formed; an insulating layer, being formed on one surface of the semiconductor substrate; a metal post, penetrating through the conductive pad, the semiconductor substrate, and the insulating layer; and an outer-layer circuit, being electrically connected to the metal post. With the present invention, it can become unnecessary to form an additional via for electrically connecting both surfaces of the semiconductor substrate, thereby simplifying the manufacturing process, reducing the manufacturing cost, and improving the coupling reliability.

Abstract: A semiconductor package which includes a first substrate having a pre-designed pattern formed thereon; a first chip mounted by a flip chip method on one side of the first substrate; a support formed to a predetermined thickness on an edge of the first substrate; an interposer having an edge thereof placed on the support, such that the interposer covers the first substrate and forms a cavity between the interposer and the first substrate, and having a pre-designed pattern formed respectively on both sides thereof; a via penetrating the support and the interposer; a second chip mounted on one side of the interposer facing the first substrate; a second substrate placed on the other side of the interposer with at least one conductive ball positioned in-between; and a third chip mounted on the second substrate.

Abstract: A method of manufacturing a semiconductor package which includes mounting a first chip on a first substrate by a flip chip method, the first substrate having a pre-designed pattern formed thereon; forming at least one bump by performing soldering, on at least one predetermined position electrically connected with the pattern formed on the first substrate; forming a first molding by performing molding, such that the first molding covers the first substrate and the first chip; placing an interposer on the first molding; and placing a second substrate on the interposer, the second substrate having a second chip mounted thereon.

Abstract: A method of manufacturing a semiconductor package which includes mounting a first chip on a first substrate by a flip chip method, the first substrate having a pre-designed pattern formed thereon; forming a cavity by etching a center portion of a metal oxide layer; mounting a second chip inside the cavity; forming at least one via such that the via penetrates an edge of the metal oxide layer; placing the metal oxide layer on the first substrate such that the second chip and the first chip face each other; and placing a second substrate on the metal oxide layer, the second substrate having a third chip mounted thereon.

Abstract: A wafer level package and a manufacturing method thereof capable of reducing stress between an under bump metal and a bump. The wafer level package includes a substrate provided with a plurality of chip pads on a top surface; a first passivation layer to expose the chip pads; vias connected to the chip pads by passing through the first passivation layer; a metal wiring layer formed on the first passivation layer and connected to the vias; an under bump metal formed on the first passivation layer to be connected to the metal wiring layer and having a buffer pattern separated through a trench on a center; a second passivation layer formed on the first passivation layer to expose the under bump metal; a first bump formed on the buffer pattern; and a second bump filling the trench and formed on the first bump and the under bump metal.