Abstract: A coating composition for antireflection that includes a low refraction-thermosetting resin having a refractive index of 1.2 to 1.45, a high refraction-ultraviolet curable resin having a refractive index of 1.46 to 2, and an ultraviolet absorber; an antireflection film manufactured using the coating composition; and a method of manufacturing the antireflection film. The antireflection film has excellent abrasion resistance and antireflection characteristic. Further, since the antireflection film can be manufactured in one coating process, it is possible to reduce manufacturing cost.

Abstract: Disclosed herein is a parallel collision detection method using load balancing in order to detect collision between two objects of a polygon soup. The parallel collision detection method is processed in parallel using a plurality of threads. The parallel collision detection method includes traversing a Bounding Volume Traversal Tree (BVTT) using Bounding Volume Hierarchies (BVHs) related to the polygon soup in a depth first search manner or a width first search manner; recursively traversing the children node of an internal node (a parent node) when a currently traversed node is the internal node and two Boundary Volumes (BVs) in the corresponding node overlap, and stopping to traverse the node when the currently traversed node is the internal node and two Boundary Volumes (BVs) do not overlap; and storing collision primitives in a leaf node when the currently traversed node is the leaf node and collision primitives in the leaf node overlap.

Abstract: A liquid crystal display device capable of reducing a time delay in lighting of the liquid crystal display device includes a liquid crystal panel, at least one fluorescent lamps disposed below the liquid crystal panel, formed as a cylindrical shape having a central axis and supplying light to the liquid crystal panel, and at least one auxiliary optical source disposed to face the liquid crystal panel while having the central axis therebetween and supplying light to the fluorescent lamps.

Abstract: An antireflective coating composition includes a photopolymerizable acrylate monomer (C1); a particle-type metal fluoride (C2) with a refractive index of 1.40 or less; a photopolymerization initiator (C3); and at least one liquid dispersion-enhancing chelating agent (C4) selected from the group consisting of Mg(CF3COO)2, Na(CF3COO), K(CF3COO), Ca(CF3COO)2, Mg(CF2COCHCOCF3)2 and Na(CF2COCHCOCF3). This composition ensures good mechanical strength, excellent adhesion to a substrate, short curing time by UV curing, prevention of dust attachment, good erasure of stain, good dust removal and good scratch resistance, so it is usefully for making an antireflective coating film of a display.

Abstract: A semiconductor device includes an inorganic insulating layer on a semiconductor substrate, a contact plug that extends through the inorganic insulating layer to contact the semiconductor substrate and a stress buffer spacer disposed between the node contact plug and the inorganic insulating layer. The device further includes a thin-film transistor (TFT) disposed on the inorganic insulating layer and having a source/drain region extending along the inorganic insulating layer to contact the contact plug. The device may further include an etch stop layer interposed between the inorganic insulating layer and the semiconductor substrate.

Abstract: Disclosed is a method of producing ultra low phosphorus and carbon ferromanganese having 0.1 wt % or less carbon and 0.03 wt % or less phosphorus. The method includes preparing low carbon silicomanganese having low phosphorus content, preparing molten manganese slag, subjecting the molten manganese slag and the low carbon silicomanganese having low phosphorus content to primary mixing and stirring at a ratio of 70˜72:28˜30 in a ladle, thus producing a metal melt and slag, and subjecting the metal melt separated from the above slag and the molten manganese slag identical to that used in the primary mixing and stirring to secondary mixing and stirring, thus producing slag and a metal melt including 91˜93 wt % manganese, 0.60˜0.85 wt % silicon, 0.05˜0.10 wt % carbon and 0.015˜0.02 wt % phosphorus.

Abstract: A semiconductor device includes an inorganic insulating layer on a semiconductor substrate, a contact plug that extends through the inorganic insulating layer to contact the semiconductor substrate and a stress buffer spacer disposed between the node contact plug and the inorganic insulating layer. The device further includes a thin-film transistor (TFT) disposed on the inorganic insulating layer and having a source/drain region extending along the inorganic insulating layer to contact the contact plug. The device may further include an etch stop layer interposed between the inorganic insulating layer and the semiconductor substrate.

Abstract: A display device and an inverter therefor are disclosed. The inverter has a main circuit board having a plurality of first circuit patterns and a plurality of second circuit patterns formed on a first side thereof, and a sub circuit board having first connecting patterns corresponding to the plurality of first circuit patterns formed on one side of the sub circuit board and second connecting patterns corresponding to the plurality of second circuit patterns formed on a second side thereof. The plurality of first circuit patterns are coupled with each other through the first connecting patterns, and the plurality of second circuit patterns are coupled with each other through the second connecting patterns. Thus, the present invention provides an inverter and a display device having the same, which are capable of being manufactured at a low production cost.

Abstract: A semiconductor device formed on a strained silicon layer and a method of manufacturing such a semiconductor device are disclosed. In accordance with this invention, a first silicon germanium layer is formed on a single crystalline silicon substrate; a second silicon germanium layer is formed on the first silicon germanium layer, the second silicon germanium layer having a concentration of germanium in a range of about 1 percent by weight to about 15 percent by weight based on the total weight of the second silicon germanium layer; a strained silicon layer is formed on the second silicon germanium layer; an isolation layer is formed at a first portion of the strained silicon layer; a gate structure is formed on the strained silicon layer; and, source/drain regions are formed at second portions of the strained silicon layer adjacent to the gate structure to form a transistor.

Abstract: A semiconductor device includes an inorganic insulating layer on a semiconductor substrate, a contact plug that extends through the inorganic insulating layer to contact the semiconductor substrate and a stress buffer spacer disposed between the node contact plug and the inorganic insulating layer. The device further includes a thin-film transistor (TFT) disposed on the inorganic insulating layer and having a source/drain region extending along the inorganic insulating layer to contact the contact plug. The device may further include an etch stop layer interposed between the inorganic insulating layer and the semiconductor substrate.

Abstract: An antireflective coating composition includes a photopolymerizable acrylate monomer (C1); a particle-type metal fluoride (C2) with a refractive index of 1.40 or less; a photopolymerization initiator (C3); and at least one liquid dispersion-enhancing chelating agent (C4) selected from the group consisting of Mg(CF3COO)2, Na(CF3COO), K(CF3COO), Ca(CF3COO)2, Mg(CF2COCHCOCF3)2 and Na(CF2COCHCOCF3). This composition ensures good mechanical strength, excellent adhesion to a substrate, short curing time by UV curing, prevention of dust attachment, good erasure of stain, good dust removal and good scratch resistance, so it is usefully for making an antireflective coating film of a display.

Abstract: The present invention provides a coating composition for antireflection that includes a low refraction-thermosetting resin having a refractive index of 1.2 to 1.45, a high refraction-ultraviolet curable resin having a refractive index of 1.46 to 2, and an ultraviolet absorber; an antireflection film manufactured using the coating composition; and a method of manufacturing the antireflection film. The antireflection film according to the present invention has excellent abrasion resistance and antireflection characteristic. Further, since the antireflection film can be manufactured in one coating process, it is possible to reduce manufacturing cost.

Abstract: An antireflective coating composition includes a hydrolytic condensate (C1) of alkoxy silane (C11) and fluoric alkoxy silane (C12); a particle-type metal fluoride (C2) with a refractive index of 1.40 or less; and a liquid dispersion-enhancing chelating agent (C3). A coating film to which the above composition is applied controls refractive index, surface energy, film strength and so on, so it ensures excellent antireflective characteristic, excellent scratch resistance, good erasure of liquid stains such as fingerprints, and particularly excellent dust removal, so it may be usefully applied to an outermost layer of a front surface of a display regardless of kind of a display substrate or presence of an additional coating layer.

Abstract: A semiconductor device formed on a strained silicon layer and a method of manufacturing such a semiconductor device are disclosed. In accordance with this invention, a first silicon germanium layer is formed on a single crystalline silicon substrate; a second silicon germanium layer is formed on the first silicon germanium layer, the second silicon germanium layer having a concentration of germanium in a range of about 1 percent by weight to about 15 percent by weight based on the total weight of the second silicon germanium layer; a strained silicon layer is formed on the second silicon germanium layer; an isolation layer is formed at a first portion of the strained silicon layer; a gate structure is formed on the strained silicon layer; and, source/drain regions are formed at second portions of the strained silicon layer adjacent to the gate structure to form a transistor.

Abstract: A semiconductor device formed on a strained silicon layer and a method of manufacturing such a semiconductor device are disclosed. In accordance with this invention, a first silicon germanium layer is formed on a single crystalline silicon substrate; a second silicon germanium layer is formed on the first silicon germanium layer, the second silicon germanium layer having a concentration of germanium in a range of about 1 percent by weight to about 15 percent by weight based on the total weight of the second silicon germanium layer; a strained silicon layer is formed on the second silicon germanium layer; an isolation layer is formed at a first portion of the strained silicon layer; a gate structure is formed on the strained silicon layer; and, source/drain regions are formed at second portions of the strained silicon layer adjacent to the gate structure to form a transistor.

Abstract: A capacitive connector for a backlight unit having a light source including: a first conductive layer covering an end portion of the light source; an insulation layer covering an external surface of the first conductive layer; and a second conductive layer separated from the first conductive layer with the insulation layer interposed therebetween.

Abstract: Embodiments of the present invention include heterogeneous substrates, integrated circuits formed on such heterogeneous substrates. The heterogeneous substrates according to certain embodiments of the present invention include a first Group IV semiconductor layer (e.g., silicon), a second Group IV pattern (e.g., a silicon-germanium pattern) that includes a plurality of individual elements on the first Group IV semiconductor layer, and a third Group IV semiconductor layer (e.g., a silicon epitaxial layer) on the second Group IV pattern and on a plurality of exposed portions of the first Group IV semiconductor layer. The second Group IV pattern may be removed in embodiments of the present invention. In these and other embodiments of the present invention, the third Group IV semiconductor layer may be planarized.

Abstract: Provided are a copying apparatus and a user interface method for the same. The user interface method includes displaying a first region which includes information on an original document, and displaying a second region which includes information on virtual copy paper; changing the display of the second region in accordance with an input setting instruction; and when a copy instruction is input, copying the original document in accordance with the display of the second region. According to the present invention, an intuitive interface which even inexperienced users can easily use may be implemented.

Abstract: Embodiments of the present invention include heterogeneous substrates, integrated circuits formed on such heterogeneous substrates, and methods of forming such substrates and integrated circuits. The heterogeneous substrates according to certain embodiments of the present invention include a first Group IV semiconductor layer (e.g., silicon), a second Group IV pattern (e.g., a silicon-germanium pattern) that includes a plurality of individual elements on the first Group IV semiconductor layer, and a third Group IV semiconductor layer (e.g., a silicon epitaxial layer) on the second Group IV pattern and on a plurality of exposed portions of the first Group IV semiconductor layer. The second Group IV pattern may be removed in embodiments of the present invention. In these and other embodiments of the present invention, the third Group IV semiconductor layer may be planarized.