Abstract: The present invention relates to a ballast water treatment system and a ballast water treatment method.

Abstract: A method for manufacturing an organic light emitting device includes: forming an organic light emitting display panel including a substrate provided on a support substrate, an organic light emitting element on the substrate, and a thin film encapsulating film covering the organic light emitting element; detaching the support substrate from the organic light emitting display panel; attaching a bottom protecting film to a bottom of the organic light emitting display panel, the bottom protecting film comprising a first electricity removing layer configured to remove static electricity; and cutting the organic light emitting display panel into a plurality of organic light emitting devices.

Abstract: The present invention relates to a method for manufacturing a bump structure capable of enhancing adhesion, comprising the steps of: forming an under bump metal (UBM) layer on a conductive pad; forming a copper bump on the UBM layer by electrolytic plating; forming a nickel bump on the copper bump by electrolytic plating; forming a first gold bump on the nickel bump by electrolytic plating using a first gold plating solution; and forming a second gold bump on the first gold bump by electrolytic plating using a second gold plating solution, wherein the second gold plating solution contains thallium (Tl) and the first gold plating solution is free of thallium.

Abstract: An image sensor including a light source configured to emit an optical signal to a target object, and a pixel array including a first pixel configured to generate pixel signals based on the optical signal reflected from the target object, the first pixel including a first photo gate group having at least two photo gates that are configured to receive first gate signals with a first phase difference from the optical signal in a time interval and a second photo gate group having at least two photo gates configured to receive second gate signals with a second phase difference from the optical signal in the time interval, may be provided.

Abstract: A display device includes a display element including a first electrode, a protective layer arranged on the first electrode, a second electrode arranged on the protective layer at a pixel area and contacting a thin film transistor. A sensing line is arranged on the protective layer and contacts the first electrode through a contact hole exposing the first electrode through the third protective layer. The sensing line comprises a first conductive layer arranged on the protective layer and contacting the second electrode through the contact hole, and a second conductive layer arranged on the first conductive layer.

Abstract: A 3D image sensor include a depth pixel and at least two polarization pixels adjacent to the depth pixel. The depth pixel includes a charge generation region in a substrate. The depth pixel is configured to generate depth information associated with a depth of an object from the 3D image sensor in a 3D scene based on detecting light reflected from the object. Each polarization pixel includes a photodiode in the substrate and a polarizer on the substrate in a light-incident direction. The polarization pixel is configured to generate shape information associated with a shape of a surface of the object in the 3D scene based on detecting light reflected from the object. The polarization pixels and the depth pixel collectively define a unit pixel. The respective polarizers are associated with different polarization directions.

Abstract: Provided are display device and method for fabricating the same. According to an aspect of the present disclosure, there is provided a display device comprising: a first substrate; at least one wavelength conversion layer disposed on the first substrate; a capping layer disposed on the wavelength conversion layer and comprising a porous layer; and a first polarizing layer disposed on the capping layer.

Abstract: A display panel includes an array substrate, an opposite substrate facing the array substrate, and a liquid crystal layer disposed between the array substrate and the opposite substrate. The array substrate includes a display area and a non-display area surrounding the display area, and the non-display area includes a first non-display area disposed adjacent to a side portion of the display area and a second non-display area other than the first non-display area. The first non-display area overlaps the opposite substrate. The array substrate and the opposite substrate have the same or substantially the same area and a wire member is disposed under the array substrate to be connected to an external circuit module. Accordingly, the display panel does not need an extra space for the wire member, and thus the non-display area is reduced.

Abstract: A leaf spring assembly for an automobile storage compartment has a hook, a leaf spring, and a spring guide. The hook is coupled to an operating plate. One end portion of the leaf spring is fixedly coupled to the hook. The spring guide is fixedly coupled to a non-operating housing in the state where the other side portion of the leaf spring is coupled to the spring guide so as to elastically deform while being drawn in and out.

Abstract: A low refractive layer includes a plurality of hollow inorganic particles and a matrix between the hollow inorganic particles, and capable of exhibiting a good refractive index and improved durability by enhancing the weight ratio of the hollow inorganic particles to the matrix. An electronic device according to an embodiment of the inventive concept including the low refractive layer may exhibit improved reliability and good display quality.

Abstract: A Time-of-Flight (ToF)-based three-dimensional (3D) image sensor includes at least two first photogates symmetrically arranged in a central portion of a pixel, at least two first gates configured to remove an overflow charge generated in the at least two first photogates, and a first gate group. The at least two first gates are arranged symmetrically in an outer portion of the pixel. The first gate group includes a plurality of gates configured to store and transmit charges generated in the at least two first photogates. The first gate group is arranged in the outer portion of the pixel.

Abstract: An image sensor includes unit pixels, and from among the unit pixels, a first unit pixel and a second unit pixel that are adjacent to each other each include a first tap having a first photo gate, to which a first signal having a first phase difference with respect to an optical signal is applied, and a second tap having a second photo gate, to which a second signal having a second phase difference with respect to the optical signal is applied. A location of the first tap in the first unit pixel and a location of the first tap in the second unit pixel, and a location of the second tap in the first unit pixel and a location of the second tap in the second unit pixel are symmetrical with each other based on one point between the first unit pixel and the second unit pixel.

Abstract: An image sensor includes a first photoelectric conversion layer that is configured to convert light to a first signal. The image sensor also includes a transfer transistor. The transfer transistor includes a storage node region which stores the first signal. The transfer transistor also includes a transfer gate which transfers the stored first signal, and a floating diffusion region that receives the first signal. The image sensor includes a reset transistor that resets the floating diffusion region, and a drive transistor which receives a pixel voltage. The drive transistor generates an output voltage. The image sensor also includes a selection transistor which outputs the output voltage. A reset drain voltage is applied to a drain electrode of the reset transistor, and is independent of the pixel voltage. The reset drain voltage ranges from about 0.1V to about 1.0V.

Abstract: A display device according to an exemplary embodiment includes: a thin film transistor array panel; and a color conversion display panel overlapping the thin film transistor array panel, the color conversion display panel including: a substrate; a color conversion layer positioned between the substrate and the thin film transistor array panel and including a semiconductor nanocrystal; a transparent layer positioned between the substrate and the thin film transistor array panel; and at least one of a first buffer layer positioned between the color conversion layer and the substrate and between the transparent layer and the substrate, and a second buffer layer positioned between the color conversion layer and the thin film transistor array panel and between the transparent layer and the thin film transistor array panel, and at least one of the first buffer layer and the second buffer layer includes a porous layer.

Abstract: A display device includes a first substrate, a wavelength conversion layer disposed on the first substrate, an inorganic film disposed on the wavelength conversion layer, a flattening film disposed on the inorganic film, and a first polarizing layer disposed on the flattening film, where a difference between a coefficient of thermal expansion of the flattening film and a coefficient of thermal expansion of the inorganic film is about 50 ppm/K or less.

Abstract: The present invention provides a coupler comprising: an inner insertion part including a through-hole; and an outer support part for encompassing the outside of the inner insertion part, wherein the inner insertion part includes a connection groove through which the outer support part passes, the outer support part includes at least one projection part protruding in the center direction of the through-hole, and the projection part includes a groove part.

Abstract: Image sensors are provided. An image sensor includes a substrate that includes a pixel region, a first surface, and a second surface that is opposite the first surface. The image sensor includes first and second photogates that are on the first surface and are configured to generate electric charge responsive to incident light in the pixel region. Moreover, the image sensor includes first and second lenses that are on the second surface and are configured to pass the incident light toward the first and second photogates.

Abstract: A three-dimensional (3D) image sensor includes a first substrate having an upper pixel. The upper pixel includes a photoelectric element and first and second photogates connected to the photoelectric element. A second substrate includes a lower pixel, which corresponds to the upper pixel, that is spaced apart from the first substrate in a vertical direction. The lower pixel includes a first transfer transistor that transmits a first signal provided by the first photogate. A first source follower generates a first output signal in accordance with the first signal. A second transfer transistor transmits a second signal provided by the second photogate. A second source follower generates a second output signal in accordance with the second signal. First and second bonding conductors are disposed between the first and second substrates and electrically connect the upper and lower pixels.

Abstract: The image sensor includes: a semiconductor substrate having a first conductivity type and including a first surface, a second surface opposite to the first surface, and a well region adjacent to the first surface. A first vertical transfer gate and a second vertical transfer gate are spaced apart from each other and extend in a thickness direction of the semiconductor substrate from the first surface to pass through at least a part of the well region. A photoelectric conversion region has a second conductivity type, which is different from the first conductivity type, is located in the semiconductor substrate between the well region and the second surface, and overlaps the first vertical transfer gate and the second vertical transfer gate in the thickness direction of the semiconductor substrate. A wiring structure is located on the first surface of the semiconductor substrate.

Abstract: A display apparatus includes an array substrate an opposite substrate facing the array substrate, and a liquid crystal layer disposed between the array substrate and the opposite substrate. The array substrate includes a display area, a non-display area, including first and second non-display areas, a pad area, the first non-display area adjacent to the pad area, a first base substrate disposed in the display area and in the non-display area, an organic polymer layer disposed in the pad area and in the first non-display area, a thin film transistor disposed in the display area, a pixel electrode connected to the thin film transistor, and a signal input pad connected to the thin film transistor and disposed on the organic polymer layer in the pad area. The organic polymer layer is disposed on the first base substrate in the first non-display area.