Abstract: A battery pack includes a module assembly including a plurality of battery modules each including, on a side, a module opening through which venting gas is discharged, a pack cover facing the module opening and configured to cover the side of the module assembly, and an oxygen introduction preventing member located in a space formed between the module assembly and the pack cover and configured to prevent oxygen from being reversely introduced after venting gas is discharged in an extension direction of the space.

Abstract: A battery pack includes a module assembly including a plurality of battery modules arranged in a first direction, a vent channel located on a surface of the module assembly and configured to communicate with each of the plurality of battery modules, and a discharge delay member provided in the vent channel and configured to delay discharge of venting gas generated in at least some of the plurality of battery modules and introduced into the vent channel.

Abstract: A battery module includes a plurality of battery cells, at least one cooling channel provided on at least one side of the plurality of battery cells and through which a coolant for cooling the plurality of battery cells flows, and at least one cooling fin unit disposed in contact with the at least one cooling channel and having at least one support rib for supporting the at least one cooling channel.

Abstract: A battery pack has improved safety. The battery pack includes a battery module having at least one battery cell; and a thermal runaway suppression unit mounted to one side of the battery module and configured to form a positive pressure inside the battery module when an abnormal situation occurs in any one battery cell.

Abstract: A wafer cleaning apparatus is provided. The wafer cleaning apparatus includes comprising a chamber configured to be loaded with a wafer, a nozzle on the wafer and configured to provide liquid chemicals on an upper surface of the wafer, a housing under the wafer, a laser module configured to irradiate laser on the wafer, a transparent window disposed between the wafer and the laser module, and a controller configured to control on/off of the laser module, wherein the controller is configured to control repetition of turning the laser module on and off, and retain temperature of the wafer within a temperature range, and a ratio of time when the laser module is on in one cycle including on/off of the laser module is 30% to 50%.

Abstract: A substrate processing apparatus includes a vessel providing a processing space for processing a substrate, a substrate support supporting the substrate loaded in the processing space, and a barrier between a side wall of the vessel and the substrate support and surrounding an edge of the substrate supported by the substrate support.

Abstract: A wafer cleaning apparatus, a method of cleaning wafer and a method of fabricating a semiconductor device are provided. The method of fabricating the semiconductor device includes disposing a wafer on a rotatable chuck, irradiating a lower surface of the wafer with a laser to heat the wafer, and supplying a chemical to an upper surface of the wafer to clean the wafer, wherein the laser penetrates an optical system including an aspheric lens array, the laser penetrates a calibration window, which includes a first window structure including a first light projection window including first and second regions different from each other, a first coating layer covering the first region of the first light projection window, and a second coating layer covering the second region of the first light projection window, and the first coating layer and the second coating layer have different light transmissivities from each other.

Abstract: A multi-chamber apparatus for processing a wafer, the apparatus including a high etch rate chamber to receive the wafer and to etch silicon nitride with a phosphoric acid solution; a rinse chamber to receive the wafer and to clean the wafer with an ammonia mixed solution; and a supercritical drying chamber to dry the wafer with a supercritical fluid.

Abstract: Disclosed is a process for non-stop production of encapsulated probiotics, in which an alginate hydrogel is spontaneously formed through a simple process of culturing probiotics in a medium containing an alginate, a salt that forms a hydrogel by binding to alginic acid, preferably an insoluble carbonate, and optionally an encapsulation enhancer, and probiotics are encapsulated by the alginate hydrogel, thereby not only greatly improving the probiotic encapsulation process but also remarkably improving the freeze-drying viability, heat tolerance, shelf stability, and in-vivo stability (acid resistance and bile resistance) of probiotics.

Abstract: A dry cleaning apparatus includes a chamber, a substrate support supporting a substrate within the chamber, a shower head arranged in an upper portion of the chamber to supply a dry cleaning gas toward the substrate, the shower head including an optical window transmitting a laser light therethrough toward the substrate support, a plasma generator generating plasma from the dry cleaning gas, and a laser irradiator irradiating the laser light on the substrate through the optical window and the plasma to heat the substrate.

Abstract: A wafer cleaning apparatus is provided. The wafer cleaning apparatus includes comprising a chamber configured to be loaded with a wafer, a nozzle on the wafer and configured to provide liquid chemicals on an upper surface of the wafer, a housing under the wafer, a laser module configured to irradiate laser on the wafer, a transparent window disposed between the wafer and the laser module, and a controller configured to control on/off of the laser module, wherein the controller is configured to control repetition of turning the laser module on and off, and retain temperature of the wafer within a temperature range, and a ratio of time when the laser module is on in one cycle including on/off of the laser module is 30% to 50%.

Abstract: A multi-chamber apparatus for processing a wafer, the apparatus including a high etch rate chamber to receive the wafer and to etch silicon nitride with a phosphoric acid solution; a rinse chamber to receive the wafer and to clean the wafer with an ammonia mixed solution; and a supercritical drying chamber to dry the wafer with a supercritical fluid.

Abstract: A wafer cleaning apparatus, a method of cleaning wafer and a method of fabricating a semiconductor device are provided. The method of fabricating the semiconductor device includes disposing a wafer on a rotatable chuck, irradiating a lower surface of the wafer with a laser to heat the wafer, and supplying a chemical to an upper surface of the wafer to clean the wafer, wherein the laser penetrates an optical system including an aspheric lens array, the laser penetrates a calibration window, which includes a first window structure including a first light projection window including first and second regions different from each other, a first coating layer covering the first region of the first light projection window, and a second coating layer covering the second region of the first light projection window, and the first coating layer and the second coating layer have different light transmissivities from each other.

Abstract: A wafer cleaning apparatus is provided. The wafer cleaning apparatus includes comprising a chamber configured to be loaded with a wafer, a nozzle on the wafer and configured to provide liquid chemicals on an upper surface of the wafer, a housing under the wafer, a laser module configured to irradiate laser on the wafer, a transparent window disposed between the wafer and the laser module, and a controller configured to control on/off of the laser module, wherein the controller is configured to control repetition of turning the laser module on and off, and retain temperature of the wafer within a temperature range, and a ratio of time when the laser module is on in one cycle including on/off of the laser module is 30% to 50%.

Abstract: A process chamber and a substrate processing apparatus including the same are disclosed. The process chamber includes a first housing and a second housing on the first housing. The first housing includes a first outer wall, a first partition wall facing the first outer wall, and a first side wall connecting the first outer wall and the first partition wall. The second housing includes a second outer wall, a second partition wall between the second outer wall and the first partition wall, and a second side wall connecting the second outer wall and the second partition wall. Each of the first and second outer walls has a thickness greater than a thickness of the first partition wall and a thickness of the second partition wall.

Abstract: A substrate rotating apparatus may include a spin chuck supporting a substrate and a stage rotating the spin chuck about an axis parallel to a first direction. The spin chuck may include a first magnetic element and a substrate supporting member thereon. The stage may include a stage housing, a rotating part rotating about the axis, an inner control unit controlling rotation of the rotating part, a power supplying part supplying a power to the rotating part, and a wireless communication part receiving a control signal from an outside and transmitting the control signal to the inner control unit. The rotating part may include a second magnetic element spaced apart from the first magnetic element and a rotation driver rotating the second magnetic element. The rotating part, the inner control unit, the power supplying part, and the wireless communication part may be placed in the stage housing.

Abstract: An apparatus for processing a substrate includes a process chamber; a support which is placed inside the process chamber and supports the substrate; a fluid supplier which supplies fluid into the process chamber; and a controller configured to perform a compressing step to bring the fluid into a supercritical phase inside the process chamber, in which the compressing step includes a continuous first section and second section, the fluid supplier includes a first portion and a second portion, and the controller supplies the fluid into the process chamber at a first speed during the first section using the first portion, and supplies the fluid into the process chamber at a second speed higher than the first speed during the second section using the second portion.

Abstract: A wafer cleaning apparatus, a method of cleaning wafer and a method of fabricating a semiconductor device are provided. The method of fabricating the semiconductor device includes disposing a wafer on a rotatable chuck, irradiating a lower surface of the wafer with a laser to heat the wafer, and supplying a chemical to an upper surface of the wafer to clean the wafer, wherein the laser penetrates an optical system including an aspheric lens array, the laser penetrates a calibration window, which includes a first window structure including a first light projection window including first and second regions different from each other, a first coating layer covering the first region of the first light projection window, and a second coating layer covering the second region of the first light projection window, and the first coating layer and the second coating layer have different light transmissivities from each other.

Abstract: A substrate processing apparatus includes a chamber including an upper chamber and a lower chamber coupled to each other to provide a space for processing a substrate, a substrate support configured to support the substrate within the chamber, an upper supply port provided in the upper chamber and configured to supply a supercritical fluid on an upper surface of the substrate within the chamber, a recess provided in a lower surface of the upper chamber, the recess including a horizontal extension portion extending in a direction parallel with the upper surface of the substrate in a radial direction from an outlet of the upper supply port and an inclined extension portion extending obliquely at an angle from the horizontal extension portion, and a baffle member disposed within the recess between the upper supply port and the substrate.

Abstract: In a substrate processing method, a rinse process using a rinse solution is performed on a development-processed photoresist pattern on a substrate. A substitution process including a first substitution step using a mixed solution of a non-polar organic solvent and a surfactant and a second substitution step using the non-polar organic solvent is performed on the substrate. The substitution process is performed a plurality of times until the rinse solution remaining on the substrate is less than a predetermined value. A supercritical fluid drying process is performed on the substrate to dry the non-polar organic solvent remaining on the substrate.