Abstract: Disclosed herein are a nitride semiconductor device and a method for manufacturing the same. According to an exemplary embodiment, there is provided a nitride semiconductor device, including: a nitride semiconductor layer having a 2DEG channel; a drain electrode ohmic-contacted with the nitride semiconductor layer; a source electrode Schottky-contacted with the nitride semiconductor layer, including a plurality of patterned protrusion portions protruded to the drain electrode direction, and including an ohmic pattern ohmic-contacted with the nitride semiconductor layer therein; a dielectric layer disposed on the nitride semiconductor layer between the drain electrode and the source electrode and over at least a portion of the source electrode including the patterned protrusion portions; and a gate electrode disposed on the dielectric, wherein a portion of the gate electrode is disposed on the dielectric layer over the patterned protrusion portions and a drain direction edge portion of the source electrode.

Abstract: Provided is a nitride semiconductor device including: a nitride semiconductor layer over a substrate wherein the nitride semiconductor has a two-dimensional electron gas (2DEG) channel inside; a drain electrode in ohmic contact with the nitride semiconductor layer; a source electrode in Schottky contact with the nitride semiconductor layer wherein the source electrode is spaced apart from the drain electrode; a floating guard ring in Schottky contact with the nitride semiconductor layer between the drain electrode and the source electrode; a dielectric layer formed on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode wherein the dielectric layer is applied to the floating guard ring between the drain electrode and the source electrode; and a gate electrode formed on the dielectric layer to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed over a drain-side edge portion of the source e

Abstract: Provided is a nitride semiconductor device including: a nitride semiconductor layer over a substrate wherein the nitride semiconductor has a two-dimensional electron gas (2DEG) channel inside; a drain electrode in ohmic contact with the nitride semiconductor layer; a source electrode in Schottky contact with the nitride semiconductor layer wherein the source electrode is spaced apart from the drain electrode; a dielectric layer formed on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode, wherein the dielectric layer has a recess formed between the drain electrode and the source electrode; and a gate electrode formed on the dielectric layer and in the recess to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed over a drain-side edge portion of the source electrode with the dielectric layer interposed therebetween, and a manufacturing method thereof.

Abstract: Provided is a nitride semiconductor device including: a nitride semiconductor layer over a substrate wherein the nitride semiconductor has a two-dimensional electron gas (2DEG) channel inside; a drain electrode in ohmic contact with the nitride semiconductor layer; a source electrode spaced apart from the drain electrode, in Schottky contact with the nitride semiconductor layer, and having an ohmic pattern in ohmic contact with the nitride semiconductor layer inside; a dielectric layer formed on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode; and a gate electrode disposed on the dielectric layer to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed over a drain-side edge portion of the source electrode with the dielectric layer interposed therebetween, and a manufacturing method thereof.

Abstract: Provided is a nitride semiconductor device including: a nitride semiconductor layer over a substrate wherein the nitride semiconductor has a two-dimensional electron gas (2DEG) channel inside; a drain electrode in ohmic contact with the nitride semiconductor layer; a source electrode in Schottky contact with the nitride semiconductor layer wherein the source electrode is spaced apart from the drain electrode; a dielectric layer formed on the nitride semiconductor layer between the drain electrode and the source electrode and on at least a portion of the source electrode; and a gate electrode disposed on the dielectric layer to be spaced apart from the drain electrode, wherein a portion of the gate electrode is formed over a drain-side edge portion of the source electrode with the dielectric layer interposed therebetween, and a manufacturing method thereof.

Abstract: The present invention relates to a dish washing machine, and more particularly to a dish washing machine having a structure in which a bottom surface of the dish washing machine is not wet with water. The dish washing machine includes a washing chamber (150) for washing dishes, a fan (90) for discharging air from the washing chamber (150), a housing for a space to install the fan (90), an exhaust duct (92) for guiding the air from the housing (94) to an outside of the dish washing machine, and a passage for draining water to an outside of the housing (94) whenever the water is present in the housing (94).

Abstract: A high-molecular-weight recombinant silk or silk-like protein having a molecular weight which is substantially similar to that of native silk protein, and a micro- or nano-sized spider silk or silk-like fiber having improved physical properties, produced therefrom. The recombinant silk or silk-like protein according to the invention has high molecular weight, like dragline silk proteins from spiders, while a fiber produced therefrom has excellent physical properties compared to a fiber produced from native silk protein. Thus, the recombinant silk or silk-like protein and the spider silk or silk-like fiber produced therefrom will be highly useful in various industrial applications, including bioengineering applications and medical applications.

Abstract: An apparatus and method for processing a division of a binary polynomial are provided. The apparatus includes a plurality of exclusive OR (XOR) operators that may perform a selective XOR operation with respect to a conditional bit of a dividend polynomial. The plurality of XOR operators may perform selective XOR operations in parallel and accordingly, a division of a binary polynomial may be rapidly performed.

Abstract: Provided are an apparatus and method for performing a complex number operation using a Single Instruction Multiple Data (SIMD) architecture. A SIMD operation apparatus may perform, in parallel, a real part operation and an imaginary part operation of a plurality of complex numbers. The real part operation and the imaginary part operation may be performed sequentially, or in parallel.

Abstract: The present invention relates to a silk nanofiber nerve conduit characterized in that fibroin nanofibers having a diameter of 200 to 400 nm, originated from silk fiber, are stacked layer upon layer to form a porous conduit-shape; and a method for producing thereof, more specifically, to a method for producing a silk nanofiber nerve conduit comprising: (Step 1) preparing a fibrous spinning solution; (Step 2) producing a silk nanofiber of conduit-shape by electrospinning the fibrous spinning solution prepared in step 1 into the cylindrical collecting part coated with polyethyleneoxide; and (Step 3) separating a silk nanofiber of conduit-shape produced in step 2 from the collecting part. The silk nanofiber nerve conduit of the present invention has excellent biocompatibility; allows the body fluid to be exchanged inter in and out of conduit through pores of the conduit, as well; has a proper elasticity, tensile strength, and tear strength.

Abstract: Disclosed is an apparatus for tracking and condensing sunlight of a sliding type which tracks a direction of sunlight according to variations of an altitude or orbit of the sun, pivots a solar module plate to maximize condensing efficiency, and strengthens a fixing structure on an inclined ground or inclined building surface by using a frame structure on the bottom without using a concrete base harmful to natural environment.

Abstract: Disclosed is an apparatus for tracking and condensing sunlight of a wall installation type which tracks the position of the Sun and efficiently condenses sunlight according to variations of an altitude or orbit of the sun by installing a sunlight condensing device for adjusting an angle onto a wall. An apparatus for tracking and condensing sunlight of a wall installation type, comprises: a wall means 100; a sunlight condensing means 200 for condensing sunlight by forming onto a side surface of the wall means 100; and an opening and closing means 300 for adjusting condensing angle by opening or closing an end of the sunlight condensing means 200.

Abstract: A dishwasher is provided in which heights of basket(s) of a rack assembly may be easily changed. The dishwasher may include a frame configured to be inserted into and withdraw from a washing tub and plurality of basket positioning device configured to receive and support basket(s) at different heights.

Abstract: The present invention provides a nitride-based semiconductor device. The nitride-based semiconductor device includes: a base substrate having a diode structure; an epi-growth film disposed on the base substrate; and an electrode part disposed on the epi-growth film, wherein the diode structure includes: first-type semiconductor layers; and a second-type semiconductor layer which is disposed within the first-type semiconductor layers and has both sides covered by the first-type semiconductor layers.

Abstract: Disclosed herein is a nitride-based semiconductor device. The nitride-based semiconductor device includes a base substrate having a PN junction structure, an epi-growth layer disposed on the base substrate, and an electrode unit disposed on the epi-growth layer.

Abstract: A method for controlling a dishwasher including the steps of first determining a steam operation mode for washing dishes and second determining at least one of a motor rotation speed, a number of repetitions of a steam supply step, a steam washing pattern, and an amount of detergent based on the determined steam operation mode.

Abstract: A light leakage compensating unit image sensor in a back side illumination method includes a photodiode and a storage diode, in which light input to a back side of the unit image sensor is received only by an area forming an electrode of the photodiode, and an area for forming another electrode of the photodiode and an area for forming two electrodes of the storage diode are separated from each other by a well, thereby compensating light leakage.

Abstract: An embodiment relates to a dish washer. A dish washer according to an embodiment comprises: a tub that defines a space for washing dishes; a water supply unit that has a water chamber where water supplied from the outside collects, to wash the dishes; a sump that is supplied with water from the water chamber and supplies wash water into the tub; and a heat exchange passage through which the wash water in the sump flows and exchanges heat with the water in the water chamber while flowing.

Abstract: Embodiments relate to a dish washer and a control method of the dish washer. A dish washer according to an aspect of the present invention comprises: a water supply unit that has a water chamber collecting water that is used to wash dishes; a sump that is supplied with the water in the water chamber and supplies wash water into a tub; a filter unit that is disposed in the sump and filters foreign substances in the wash water; and a heat exchange passage for heat exchange between the wash water in the sump and the water collecting in the water chamber, in which the wash water that has exchanged heat with the water chamber is discharged to the filter unit.

Abstract: A drum type washing machine is provided, in which vibration is efficiently attenuated, by a maximum capacity within a size-fixed cabinet is provided, and by which a user does not bend over or sit down to load laundry into the washing machine. The drum type washing machine includes a cabinet forming an exterior of the drum type washing machine, a tub fixed within the cabinet, the tub having a laundry loading entrance at an outer circumference of the tub, a drum rotatably provided within the tub, the drum having an opening on a lateral side of the drum to communicate with the laundry loading entrance of the tub, a motor assembly provided next to one side of the drum to rotate the drum, and a suspension assembly provided to support a weight of the drum and attenuate vibration of the drum.