Patents by Inventor Young Hwan Park

Young Hwan Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • POWER SWITCHING DEVICE AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20140091312
    Abstract: A power switching device includes a channel forming layer on a substrate which includes a 2-dimensional electron gas (2DEG), and a channel supply layer which corresponds to the 2DEG at the channel forming layer. A cathode is coupled to a first end of the channel supply layer and an anode is coupled to a second end of the channel supply layer. The channel forming layer further includes a plurality of depletion areas arranged in a pattern, and portions of the channel forming layer between the plurality of depletion areas are non-depletion areas.
    Type: Application
    Filed: June 26, 2013
    Publication date: April 3, 2014
    Inventors: Woo-chul JEON, Young-hwan PARK, Ki-yeol PARK, Jai-kwang SHIN, Jae-joon OH
  • NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTOR
    Publication number: 20140091363
    Abstract: According to example embodiments, a normally-off high electron mobility transistor (HEMT) includes: a channel layer having a first nitride semiconductor, a channel supply layer on the channel layer, a source electrode and a drain electrode at sides of the channel supply layer, a depletion-forming layer on the channel supply layer, a gate insulating layer on the depletion-forming layer, and a gate electrode on the gate insulation layer. The channel supply layer includes a second nitride semiconductor and is configured to induce a two-dimensional electron gas (2DEG) in the channel layer. The depletion-forming layer is configured has at least two thicknesses and is configured to form a depletion region in at least a partial region of the 2DEG. The gate electrode contacts the depletion-forming layer.
    Type: Application
    Filed: May 1, 2013
    Publication date: April 3, 2014
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Woo-chul JEON, Young-hwan PARK, Jae-joon OH, Kyoung-yeon KIM, Joon-yong KIM, Ki-yeol PARK, Jai-kwang SHIN, Sun-kyu HWANG
  • Controlling method of dishwasher
    Patent number: 8673085
    Abstract: A method for controlling a dishwasher including the steps of first determining a steam operation mode for washing dishes and second determining at least one of a motor rotation speed, a number of repetitions of a steam supply step, a steam washing pattern, and an amount of detergent based on the determined steam operation mode.
    Type: Grant
    Filed: September 7, 2011
    Date of Patent: March 18, 2014
    Assignee: LG Electronics Inc.
    Inventors: Yog Jin Choi, Joon Ho Pyo, Seong Ho Kim, Yong Youp Han, Young Hwan Park
  • Dishwasher
    Patent number: 8673090
    Abstract: A water flow control device for an appliance includes a sump to collect water from a washtub, a supply passage to supply water from the sump to the washtub, a drain passage, coupled to the sump to discharge water; and a disposer to dispose contaminates in water from the sump. The disposer is in fluid communication with the drain passage but not the supply passage.
    Type: Grant
    Filed: August 13, 2009
    Date of Patent: March 18, 2014
    Assignee: LG Electronics Inc.
    Inventors: Sang Heon Yoon, Jae Won Chang, Young Hwan Park, Gap Su Shin, Joon Ho Pyo
  • HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20140061725
    Abstract: According to example embodiments, a higher electron mobility transistor (HEMT) may include a first channel layer, a second channel layer on the first channel layer, a channel supply on the second channel layer, a drain electrode spaced apart from the first channel layer, a source electrode contacting the first channel layer and contacting at least one of the second channel layer and the channel supply layer, and a gate electrode unit between the source electrode and the drain electrode. The gate electrode unit may have a normally-off structure. The first and second channel layer form a PN junction with each other. The drain electrode contacts at least one of the second channel layer and the channel supply layer.
    Type: Application
    Filed: January 30, 2013
    Publication date: March 6, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ki-yeol PARK, Woo-chul JEON, Young-hwan PARK, Jai-kwang SHIN, Jong-bong HA, Sun-kyu HWANG
  • Controlling method of dishwasher
    Patent number: 8657965
    Abstract: A method for controlling a dishwasher includes sequentially performing a first main washing step, a second main washing step, and a third main washing step. The first main washing step includes supplying washing water, which is heated by a sump heater, to a washing chamber. The second main washing step includes selectively performing a steam spraying action for supplying steam to the washing chamber, and performing a water supplying action for supplying washing water to the washing chamber. The third main washing step includes supplying washing water, heated by the sump heater, to the washing chamber.
    Type: Grant
    Filed: July 3, 2008
    Date of Patent: February 25, 2014
    Assignee: LG Electronics Inc.
    Inventors: Yong Jin Choi, Joon Ho Pyo, Seong Ho Kim, Jung Youp Han, Young Hwan Park
  • SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SEMICONDUCTOR DEVICE
    Publication number: 20140048850
    Abstract: According to example embodiments, a semiconductor device may include a high electron mobility transistor (HEMT) on a first region of a substrate, and a diode on a second region of the substrate. The HEMT may be electrically connected to the diode. The HEMT and the diode may be formed on an upper surface of the substrate such as to be spaced apart from each other in a horizontal direction. The HEMT may include a semiconductor layer. The diode may be formed on another portion of the substrate on which the semiconductor layer is not formed. The HEMT and the diode may be cascode-connected to each other.
    Type: Application
    Filed: March 8, 2013
    Publication date: February 20, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Woo-chul JEON, Young-hwan PARK, Ki-yeol PARK, Jai-kwang SHIN, Jae-joo OH, Jong-bong HA
  • ELECTRONIC DEVICE INCLUDING TRANSISTOR AND METHOD OF OPERATING THE SAME
    Publication number: 20140049296
    Abstract: An electronic device may include a first transistor having a normally-on characteristic; a second transistor connected to the first transistor and having a normally-off characteristic; a constant voltage application unit configured to apply a constant voltage to a gate of the first transistor; and a switching unit configured to apply a switching signal to the second transistor. The first transistor may be a high electron mobility transistor (HEMT). The second transistor may be a field-effect transistor (FET). The constant voltage application unit may include a diode connected to the gate of the first transistor; and a constant current source connected to the diode.
    Type: Application
    Filed: March 8, 2013
    Publication date: February 20, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Woo-chul JEON, Ki-yeol PARK, Young-hwan PARK, Jai-kwang SHIN, Jae-joon OH
  • HIGH ELECTRON MOBILITY TRANSISTOR
    Publication number: 20140042449
    Abstract: According to example embodiments, a high electron mobility transistor (HEMT) includes a channel supply layer that induces a two-dimensional electron gas (2DEG) in a channel layer, a source electrode and a drain electrode that are at sides of the channel supply layer, a depletion-forming layer that is on the channel supply layer and contacts the source electrode, a gate insulating layer on the depletion-forming layer, and a gate electrode on the gate insulating layer. The depletion-forming layer forms a depletion region in the 2DEG.
    Type: Application
    Filed: January 2, 2013
    Publication date: February 13, 2014
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Woo-chul JEON, Jong-seob KIM, Ki-yeol PARK, Young-hwan PARK, Jai-kwang SHIN, Jae-joon OH, Jong-bong HA, Sun-kyu HWANG
  • Semiconductor device and method of manufacturing the same
    Patent number: 8637902
    Abstract: There is provided a semiconductor device having a High Electron Mobility Transistor (HEMT) structure allowing for enhanced performance and a method of manufacturing the same. The semiconductor device includes a base substrate; a semiconductor layer provided on the base substrate; a source electrode, a gate electrode and a drain electrode provided on the semiconductor layer to be spaced apart from one another; and an ohmic-contact layer partially provided at an interface between the drain electrode and the semiconductor layer.
    Type: Grant
    Filed: October 19, 2010
    Date of Patent: January 28, 2014
    Assignee: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Ki Yeol Park, Woo Chul Jeon, Young Hwan Park, Jung Hee Lee
  • NITRIDE-BASED SEMICONDUCTOR DEVICE
    Publication number: 20140021514
    Abstract: A nitride-based semiconductor diode includes a substrate, a first semiconductor layer disposed on the substrate, and a second semiconductor layer disposed on the first semiconductor layer. The first and second semiconductor layers include a nitride-based semiconductor. A first portion of the second semiconductor layer may have a thickness thinner than a second portion of the second semiconductor layer. The diode may further include an insulating layer disposed on the second semiconductor layer, a first electrode covering the first portion of the second semiconductor layer and forming an ohmic contact with the first semiconductor layer and the second semiconductor layer, and a second electrode separated from the first electrode, the second electrode forming an ohmic contact with the first semiconductor layer and the second semiconductor layer.
    Type: Application
    Filed: June 25, 2013
    Publication date: January 23, 2014
    Inventors: Woo-chul JEON, Ki-yeol PARK, Young-hwan PARK, Jai-kwang SHIN, Jae-joon OH
  • HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20140021510
    Abstract: A higher electron mobility transistor (HEMT) and a method of manufacturing the same are disclosed. According to example embodiments, the HEMT may include a channel supply layer on a channel layer, a source electrode and a drain electrode that are on at least one of the channel layer and the channel supply layer, a gate electrode between the source electrode and the drain electrode, and a source pad and a drain pad. The source pad and a drain pad electrically contact the source electrode and the drain electrode, respectively. At least a portion of at least one of the source pad and the drain pad extends into a corresponding one of the source electrode and drain electrode that the at least one of the source pad and the drain pad is in electrical contact therewith.
    Type: Application
    Filed: January 29, 2013
    Publication date: January 23, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Woo-chul JEON, Ki-yeol PARK, Young-hwan PARK, Jai-kwang SHIN, Jae-joon OH, Hyuk-soon CHOI, Jong-bong HA
  • HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20140021511
    Abstract: A high electron mobility transistor (HEMT) according to example embodiments includes a channel layer, a channel supply layer on the channel layer, a source electrode and a drain electrode on at least one of the channel layer and the channel supply layer, a gate electrode between the source electrode and the drain electrode, and a Schottky electrode forming a Schottky contact with the channel supply layer. An upper surface of the channel supply layer may define a Schottky electrode accommodation unit. At least part of the Schottky electrode may be in the Schottky electrode accommodation unit. The Schottky electrode is electrically connected to the source electrode.
    Type: Application
    Filed: March 14, 2013
    Publication date: January 23, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Woo-chul JEON, Kyoung-yeon KIM, Jong-seob KIM, Joon-yong KIM, Ki-yeol PARK, Young-hwan PARK, Jai-kwang SHIN, Jae-joon OH, Hyuk-soon CHOI, Jong-bong HA, Sun-kyu HWANG, In-jun HWANG
  • THREE-DIMENSIONAL POROUS SCAFFOLD AND MANUFACTURING METHOD THEREOF
    Publication number: 20140005797
    Abstract: A three-dimensional porous scaffold and a preparation method thereof. The three-dimensional porous scaffold comprises a biodegradable multifilament draw-textured yarn on the inside of a tubular knitted fabric made of a biodegradable polymer. The three-dimensional porous scaffold has a porosity formed by the network mesh structure of the tubular knitted fabric and the 10-150 ?m pores formed in the biodegradable multifilament draw-textured yarn, while it has a bulkiness of 150-1000% due to the biodegradable multifilament drawn textured yarn inserted in the tubular knitted fabric. Thus, the scaffold has a high degree of interconnection between pores, so that cell culture, cell delivery or drug delivery on the stable three-dimensional scaffold structure is performed in an optimized manner.
    Type: Application
    Filed: March 15, 2012
    Publication date: January 2, 2014
    Inventors: Young Hwan Park, Jung Nam Im, Tae Hee Kim, Jae Hoon Ko, Sung Jin Kim
  • PLANT CULTIVATION SYSTEM
    Publication number: 20130305601
    Abstract: The plant cultivation system includes: a circulatory system including axises installed in a corresponding portion of a frame installed in a cultivation room; chain gear axis-installed in the axises respectively; a left and a right chains; and a deduction motor connected and installed onto any axis of the axises; cultivating pot members including a can body, and a hook plate, fixed to left and right ends of the upper surface of the can body; and for moving and circulating in the inner space of the cultivation room by rotatably installing as hanging between the left and a right chains by the left and right hook axises and the hook plate; a medicinal fluid supplier; and an air blower, installed in the cultivation room.
    Type: Application
    Filed: February 16, 2012
    Publication date: November 21, 2013
    Inventor: Young Hwan PARK
  • Unit pixels including boosting capacitors, pixel arrays including the unit pixels and photodetecting devices including the pixel arrays
    Patent number: 8563914
    Abstract: A unit pixel capable of achieving full initialization of a floating diffusion area, a pixel array including the unit pixel, and a photodetecting device including the pixel array. The unit pixel includes a photodetector, a transmission transistor for transmitting charges generated from the photodetector to a floating diffusion area, a reset transistor for initializing the floating diffusion area, and a boosting capacitor having a first terminal connected to the floating diffusion area and a second terminal to which a boosting voltage is applied.
    Type: Grant
    Filed: May 27, 2010
    Date of Patent: October 22, 2013
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jung-chak Ahn, Kyung-ho Lee, Shay Hamami, Young-hwan Park
  • Sunlight-tracking apparatus of a wall installation type having an opening and closing hinge bar pivotally connected in a hinge fixing bar
    Patent number: 8541725
    Abstract: Disclosed is an apparatus for tracking and condensing sunlight of a wall installation type which tracks the position of the Sun and efficiently condenses sunlight according to variations of an altitude or orbit of the sun by installing a sunlight condensing device for adjusting an angle onto a wall. An apparatus for tracking and condensing sunlight of a wall installation type, comprises: a wall means 100; a sunlight condensing means 200 for condensing sunlight by forming onto a side surface of the wall means 100; and an opening and closing means 300 for adjusting condensing angle by opening or closing an end of the sunlight condensing means 200.
    Type: Grant
    Filed: November 5, 2010
    Date of Patent: September 24, 2013
    Assignee: Green Plus Co., Ltd.
    Inventor: Young Hwan Park
  • Drum type washing machine
    Patent number: RE44511
    Abstract: A drum type washing machine is provided, in which vibration is efficiently attenuated, by a maximum capacity within a size-fixed cabinet is provided, and by which a user does not bend over or sit down to load laundry into the washing machine. The drum type washing machine includes a cabinet forming an exterior of the drum type washing machine, a tub fixed within the cabinet, the tub having a laundry loading entrance at an outer circumference of the tub, a drum rotatably provided within the tub, the drum having an opening on a lateral side of the drum to communicate with the laundry loading entrance of the tub, a motor assembly provided next to one side of the drum to rotate the drum, and a suspension assembly provided to support a weight of the drum and attenuate vibration of the drum.
    Type: Grant
    Filed: May 26, 2011
    Date of Patent: October 1, 2013
    Assignee: LG Electronics Inc.
    Inventors: Na Eun Kim, Jin Woong Kim, Young Hwan Park, Jae Won Chang
  • Drum type washing machine
    Patent number: RE44674
    Abstract: A drum type washing machine is provided, in which vibration is efficiently attenuated, by a maximum capacity within a size-fixed cabinet is provided, and by which a user does not bend over or sit down to load laundry into the washing machine. The drum type washing machine includes a cabinet forming an exterior of the drum type washing machine, a tub fixed within the cabinet, the tub having a laundry loading entrance at an outer circumference of the tub, a drum rotatably provided within the tub, the drum having an opening on a lateral side of the drum to communicate with the laundry loading entrance of the tub, a motor assembly provided next to one side of the drum to rotate the drum, and a suspension assembly provided to support a weight of the drum and attenuate vibration of the drum.
    Type: Grant
    Filed: May 26, 2011
    Date of Patent: December 31, 2013
    Assignee: LG Electronics Inc.
    Inventors: Na Eun Kim, Jin Woong Kim, Young Hwan Park, Jae Won Chang
  • Drum type washing machine
    Patent number: RE44795
    Abstract: A drum type washing machine is provided, in which vibration is efficiently attenuated, by a maximum capacity within a size-fixed cabinet is provided, and by which a user does not bend over or sit down to load laundry into the washing machine. The drum type washing machine includes a cabinet forming an exterior of the drum type washing machine, a tub fixed within the cabinet, the tub having a laundry loading entrance at an outer circumference of the tub, a drum rotatably provided within the tub, the drum having an opening on a lateral side of the drum to communicate with the laundry loading entrance of the tub, a motor assembly provided next to one side of the drum to rotate the drum, and a suspension assembly provided to support a weight of the drum and attenuate vibration of the drum.
    Type: Grant
    Filed: May 26, 2011
    Date of Patent: March 11, 2014
    Assignee: LG Electronics Inc.
    Inventors: Na Eun Kim, Jin Woong Kim, Young Hwan Park, Jae Won Chang