Abstract: An organic light-emitting display apparatus includes an emission pixel in a display area and a spare pixel circuit in a repair area outside the display area. The emission pixels includes a plurality of sub emission pixels each including a driving unit for generating a driving current corresponding to input data signals and an emission device for emitting light by using the driving current. The spare pixel circuit is coupled to a repair line that is coupled to the emission device of one of the sub emission pixels. The spare pixel circuit includes a plurality of driving transistors corresponding to the plurality of sub emission pixels.

Abstract: A complementary metal oxide semiconductor (CMOS) device includes an n-type first transistor on a silicon substrate, the n-type first transistor including a Group III-V compound semiconductor substrate, and a p-type second transistor on the silicon substrate, the p-type second transistor including a germanium based substrate.

Abstract: A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.

Abstract: There are provided an apparatus and a method for eye tracking. The method for eye tracking includes: determining an eyeball area covering a subject's eyeballs; allowing an infrared beam element to emit light during an exposure time of a light-receiving sensor corresponding to the eyeball area; and tracking a subject's gaze based on reflected light emitted by the infrared beam element and reflected by the subject's eyeballs.

Abstract: A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.

Abstract: Provided are group III-V semiconductor transistors and methods of manufacturing the same. The method includes forming a group III-V semiconductor channel layer on a substrate, forming a gate insulating layer covering the group III-V semiconductor channel layer, and forming a protection layer including sulfur between the group III-V semiconductor channel layer and the gate insulating layer by annealing the substrate under a sulfur atmosphere.

Abstract: An organic light-emitting display apparatus includes: a plurality of emitting pixels coupled to a plurality of scan lines extending in a row direction and a plurality of data lines extending in a column direction; a plurality of dummy pixels arranged in the row direction; a plurality of first repair lines extending in the column direction, that are coupled to the plurality of dummy pixels, and that are adapted to be coupled to the plurality of emitting pixels; a plurality of second repair lines extending in the column direction, and that are coupled to the plurality of dummy pixels; and a plurality of repair switching devices arranged in a matrix array and adapted to be coupled to the plurality of scan lines and the plurality of second repair lines and adapted to be coupled to the plurality of data lines.

Abstract: An organic light-emitting display apparatus includes an emission pixel in a display area and a spare pixel circuit in a repair area outside the display area. The emission pixels includes a plurality of sub emission pixels each including a driving unit for generating a driving current corresponding to input data signals and an emission device for emitting light by using the driving current. The spare pixel circuit is coupled to a repair line that is coupled to the emission device of one of the sub emission pixels. The spare pixel circuit includes a plurality of driving transistors corresponding to the plurality of sub emission pixels.

Abstract: A method of forming a group III-V material layer, a semiconductor device including the group III-V material layer, and a method of manufacturing the semiconductor device. The semiconductor device includes a substrate; a group III-V channel layer formed on the substrate; a gate insulating layer formed on the group III-V channel layer; and a gate electrode and source and drain electrodes formed on the gate insulating layer, the source and drain electrodes having intervals from the gate electrode, wherein voids exist between a lower portion of the group III-V channel layer and an insulating layer. The group III-V channel layer may include a binary, ternary, or quaternary material.

Abstract: Semiconductor devices including a substrate (e.g., silicon substrate), a multi-layer structure disposed on a portion of the substrate, and at least one electrode disposed on the multi-layer structure and methods of manufacturing the same are provided. The multi-layer structure may include an active layer containing a Group III-V material and a current blocking layer disposed between the substrate and the active layer. The semiconductor device may further include a buffer layer disposed between the substrate and the active layer. In a case that the substrate is a p-type, the buffer layer may be an n-type material layer and the current blocking layer may be a p-type material layer. The current blocking layer may contain a Group III-V material. A mask layer having an opening may be disposed on the substrate so that the multi-layer structure may be disposed on the portion of the substrate exposed by the opening.

Abstract: An operating method of an ECC decoder includes receiving first chunk data and second chunk data from a nonvolatile memory device, the second chunk data subsequent to the first chunk data, performing error correction on the first chunk data, determining if the first chunk data includes an uncorrectable error bit and determining not to perform error correction on the second chunk data in response to the first chunk data including the uncorrectable error bit.

Abstract: The present invention discloses a method of producing a magnesia-zirconia complex carrier for a catalyst for oxidative dehydrogenation of n-butane by sol-gel method; a method of producing a magnesium orthovanadate catalyst containing vanadium supported by said magnesia-zirconia complex carrier; and a method of producing n-butene and 1,3-butadiene using said catalyst.

Abstract: The present invention discloses a method of producing a magnesia-zirconia complex carrier for a catalyst for oxidative dehydrogenation of n-butane through a single-step precipitation process wherein the oxidative dehydrogenation of n-butane is to produce n-butene and 1,3-butadiene from n-butane; a method of producing a magnesium orthovanadate catalyst supported by thus prepared magnesia-zirconia complex carrier; and a method of producing n-butene and 1,3-butadiene using said catalyst.

Abstract: A power supply device includes a full-bridge circuit including first to fourth switches switching power input from a power input unit, the first and second switches and the third and fourth switches being connected to both terminals of the power input unit in parallel; a resonance unit connected between a first connection node between the first and second switches and a second connection node between the third and fourth switches; a transformer including primary and secondary windings connected to the resonance unit in series; a rectifying circuit rectifying and outputting voltage transferred from the secondary winding; a sensing unit obtaining at least one of output current and output voltage output from the rectifying circuit; and a controlling unit controlling the first to third switches or the second to fourth switches, based on the at least one of the output current and the output voltage obtained by the sensing unit.

Abstract: Semiconductor devices including a substrate (e.g., silicon substrate), a multi-layer structure disposed on a portion of the substrate, and at least one electrode disposed on the multi-layer structure and methods of manufacturing the same are provided. The multi-layer structure may include an active layer containing a Group III-V material and a current blocking layer disposed between the substrate and the active layer. The semiconductor device may further include a buffer layer disposed between the substrate and the active layer. In a case that the substrate is a p-type, the buffer layer may be an n-type material layer and the current blocking layer may be a p-type material layer. The current blocking layer may contain a Group III-V material. A mask layer having an opening may be disposed on the substrate so that the multi-layer structure may be disposed on the portion of the substrate exposed by the opening.

Abstract: Provided is an organic light-emitting display apparatus and a method of repairing the same. The organic light-emitting display apparatus includes: an emission device comprising a plurality of sub-emission devices; an emission pixel circuit configured to supply a driving current to the emission device; a dummy pixel circuit configured to supply the driving current to the emission device; and a repair line coupling the emission device to the dummy pixel circuit, wherein the emission device is configured to receive the driving current from the emission pixel circuit or the dummy pixel circuit.

Abstract: The provided is a preparation method of a platinum/tin/alumina catalyst which comprises platinum as an active component having high activity to direct dehydrogenation of n-butane, tin capable of preventing platinum particles from being sintered and maintaining a size of the platinum particles to be small, thereby improving dispersibility and increasing an amount at an active site during the dehydrogenation and also capable of suppressing carbon deposition, thereby increasing stability of the catalyst, and as an support for supporting them, an alumina support which is known as being suitable for direct dehydrogenation of n-butane and is capable of maintaining high dispersibility of the platinum with high thermal and mechanical stability, and a method for producing high value-added C4 olefins through direct dehydrogenation of inexpensive n-butane by using the catalyst prepared by the preparation method.

Abstract: A substrate structure includes a substrate, a nucleation layer on the substrate and including a group III-V compound semiconductor material having a lattice constant that is different from that of the substrate by less than 1%, and a buffer layer on the nucleation layer and including first and second layers, wherein the first and second layers include group III-V compound semiconductor materials having lattice constants that are greater than that of the nucleation layer by 4% or more.

Abstract: A source driving integrated circuit is provided. The source driving integrated circuit includes a source driver area, an electrostatic discharge (ESD) circuit area and a fan-out area. The source driver area includes a plurality of source driver units. The ESD circuit area includes a plurality of ESD units. The fan-out area includes conduction lines for electrically connecting respective ones of the source driver units of the source driver area to ones of the plurality of the ESD units of the ESD circuit area. In a horizontal structure of a semiconductor integrated circuit, the fan-out area at least partially overlaps the ESD circuit area.

Abstract: The present invention relates to a slide chip for a sensor for detection of food-borne bacteria and a fabrication method thereof. More particularly, the invention relates to a slide chip for a sensor for detection of food-borne bacteria and a fabrication method thereof, the slide chip comprising: a substrate coated with a metal; a linker having a substituent which may be bonded to the metal and is located at the 5? end of deoxythymidine (dT); and a food-borne bacterium-derived RNA aptamer that is bound to the linker by the 3?-end poly A tail. The slide chip makes it possible to detect food-borne bacteria in a rapid and accurate manner.