Abstract: A light-emitting diode (LED) package includes a package substrate, a first electrode pad, a second electrode pad, an upper insulating layer and an LED chip. The first electrode pad is disposed on an upper surface of the package substrate and includes a groove. The second electrode pad includes a protruding portion disposed in the groove of the first electrode pad. The upper insulating layer insulates the first electrode pad from the second electrode pad on the package substrate. The LED chip includes a first electrode and a second electrode which are respectively electrically connected in the form of a flip-chip to the first electrode pad and the protruding portion of the second electrode pad.

Abstract: A method of producing a carrier used for a catalyst for oxidative dehydrogenation of n-butane; a method of producing a magnesium orthovanadate catalyst supported by the carrier; and a method of producing n-butene and 1,3-butadiene using the catalyst are described.

Abstract: A washing machine having a balancer to offset unbalanced load generated during rotation of a drum. The washing machine includes a cabinet, a drum rotatably disposed in the cabinet, and a balancer mounted to the drum to offset unbalanced load generated in the drum during rotation of the drum. The balancer includes a balancer housing having an annular channel defined therein, at least one mass movably disposed in the channel, a magnet provided at one side of the balancer housing to restrain the mass, and a magnet case to receive the magnet.

Abstract: A balancer includes a balancer housing coupled to a drum of a washing machine, the balancer housing having an annular channel defined therein, at least one mass movably disposed in the channel, at least one magnet to restrain movement of the mass along the channel when rotational speed of the drum is within a predetermined range, and at least one magnet fixing rib formed at one side of the balancer housing to fix the magnet.

Abstract: A balancer includes a balancer housing coupled to a drum of a washing machine, the balancer housing having an annular channel defined therein, at least one mass movably disposed in the channel, at least one magnet to restrain movement of the mass along the channel when rotational speed of the drum is within a predetermined range, and at least one magnet fixing member coupled to an outside of the balancer housing to receive and fix the magnet.

Abstract: A complementary metal oxide semiconductor (CMOS) device includes an n-type first transistor on a silicon substrate, the n-type first transistor including a Group III-V compound semiconductor substrate, and a p-type second transistor on the silicon substrate, the p-type second transistor including a germanium based substrate.

Abstract: The present invention concerns a human resistin receptor. More particularly, the present invention provides a method for screening a receptor of human resistin protein, a method for preventing or treating an inflammatory disease and arteriosclerosis using an expression- or activity-regulator for a human resistin receptor, and a pharmaceutical composition including an expression- or activity-regulator for the human resistin receptor. The method for screening a human resistin protein receptor according to the present invention enables separation of a receptor which directly binds to resistin from human monocyte, reveals a mechanism of signal transduction of the resistin receptor, and therefore, is expected to contribute to regulation of an inflammatory effect of monocyte, molecular detection of causes for vascular inflammation and arteriosclerosis, and developments of prevention and a treating agent for an inflammatory disease and arteriosclerosis.

Abstract: The present invention relates to a metal filter for purifying the exhaust gas from a ship, and a preparation method thereof. The purpose of the present invention is to provide: a metal filter for purifying the exhaust gas from a ship, capable of reducing nitrogen oxide by 85% or more at 250-300° C.; and a preparation method thereof. The metal filter for removing nitrogen oxide contained in the exhaust gas from a ship of the present invention comprises an integrated catalyst, wherein a metal substrate comprising irregularities is coated with a low temperature active catalyst in which vanadium (V), tungsten (W) and alumina sol are supported in a Ti-pillared clay (Ti-PILC) powdered support.

Abstract: There are provided a power supplying apparatus controlling voltage of a power factor correcting circuit according to a power state and a power charging apparatus controlling voltage of a power factor correcting circuit according to a charging state of a battery. The power supplying apparatus includes: a power factor correcting circuit switching input power to correct a power factor thereof and adjusting a voltage level of the power of which the power factor has been corrected according to a state of power transferred to a load; and a resonant DC to DC converting circuit having a resonance frequency varied according to a voltage level of DC power from the power factor correcting circuit and converting the DC power from the power factor correcting circuit into supply power having a preset level according to the resonance frequency.

Abstract: A semiconductor device includes a plurality of first metal wirings of first to n-th layers disposed on a substrate, and a plurality of pad wirings disposed on the first metal wirings and including a metal material of an n+1-th layer. The pad wirings are disposed in a staggered shape in a first direction and have a rectangular shape lengthily extending in a second direction. A plurality of additional wirings are disposed in an additional wiring region in the first direction and include the metal material of the n+1-th layer. The additional wiring region is disposed between the pad wirings. A plurality of pads may contact an upper surface of the pad wirings. The pads have a rectangular shape having a first width in the first direction and a first length greater than the first width in the second direction.

Abstract: A method of performing a write operation or a read operation in a memory system includes compressing data of a first size unit, generating a plurality of types of Error Checking and Correction (ECC) information based on the compressed data, combining the compressed data and the plurality of types of ECC information in units of a second size, and writing the information combined in units of the second size into a memory device.

Abstract: Disclosed herein is a heat dissipation device for a power conversion module. The device includes a casing, a high-heat-dissipation heat sink and a circuit board. The casing includes a heat-dissipation fin unit which has heat dissipation fins arranged at positions spaced apart from each other by predetermined intervals. The casing has a mounting space therein. The high-heat-dissipation heat sink is installed in the mounting space of the casing. The circuit board is coupled to a lower surface of the casing. Therefore, the weight and size of the heat dissipation device can be reduced. In addition, the heat sink and the casing having the heat dissipation fins dissipate heat at the same time, thus enhancing the heat dissipation efficiency. Moreover, in an optimal design, the high-heat-dissipation heat sink is located at a position corresponding to a part which generates high heat so that the heat dissipation efficiency can be maximized.

Abstract: A semiconductor device includes a delay unit determining a delay value. A FIS (Frame Information Structure) receiver is connected to a transfer channel and receives a first H2D (Host to Device) FIS including first command information. A FIS generator is connected to a receiving channel and successively outputs a first DMA (Direct Memory Access) setup FIS, a first data FIS, and a first SDB (Set Device Bits) FIS after outputting a first D2H (Device to Host) FIS in response to the first H2D FIS, and to insert a delay period as large as the delay value next to the first data FIS or the first SDB FIS.

Abstract: A non-volatile memory device comprises a first storage unit which stores mapping information between a plurality of first addresses and a plurality of second addresses, and data; a second storage unit having a storage capacity smaller than that of the first storage unit; and a decoder which receives a first read address that is one of the plurality of first addresses, and while the mapping information is provided from the first storage unit to the second storage unit in order to locate a second read address that is one of the plurality of second addresses and corresponds to the first read address, applies a read command for reading data corresponding to the second read address to the first storage unit.

Abstract: Semiconductor devices including a substrate (e.g., silicon substrate), a multi-layer structure disposed on a portion of the substrate, and at least one electrode disposed on the multi-layer structure and methods of manufacturing the same are provided. The multi-layer structure may include an active layer containing a Group III-V material and a current blocking layer disposed between the substrate and the active layer. The semiconductor device may further include a buffer layer disposed between the substrate and the active layer. In a case that the substrate is a p-type, the buffer layer may be an n-type material layer and the current blocking layer may be a p-type material layer. The current blocking layer may contain a Group III-V material. A mask layer having an opening may be disposed on the substrate so that the multi-layer structure may be disposed on the portion of the substrate exposed by the opening.

Abstract: A magnetic memory device includes a track in which different non-magnetic layers are respectively formed on upper and lower surfaces of a magnetic layer. One of the two non-magnetic layers includes an element having an atomic number greater than or equal to 12. Accordingly, the magnetic layer has a relatively high non-adiabaticity (?).

Abstract: Information storage devices and methods of manufacturing the same are provided. A magnetic track of the information storage device includes a magnetic layer in which at least one magnetic domain forming region and at least one magnetic domain wall forming region are alternately disposed in a lengthwise direction. The at least one magnetic domain forming regions has a different magnetic anisotropic energy relative to the at least one magnetic domain wall forming region. An intermediate layer is formed under the magnetic layer. The intermediate layer includes at least one first material region and at least one second material region. Each of the at least one first material regions and the at least one second material regions corresponds to one of the at least one magnetic domain forming regions and the at least one magnetic domain wall forming regions.

Abstract: There are provided a power supplying apparatus controlling voltage of a power factor correcting circuit according to a power state and a power charging apparatus controlling voltage of a power factor correcting circuit according to a charging state of a battery. The power supplying apparatus includes: a power factor correcting circuit switching input power to correct a power factor thereof and adjusting a voltage level of the power of which the power factor has been corrected according to a state of power transferred to a load; and a resonant DC to DC converting circuit having a resonance frequency varied according to a voltage level of DC power from the power factor correcting circuit and converting the DC power from the power factor correcting circuit into supply power having a preset level according to the resonance frequency.

Abstract: A spatial disturbance that occurs when an access is concentrated in a specific memory area in a volatile semiconductor memory like DRAM is properly solved by a memory controller. The memory controller includes a concentration access detection part generating a concentration access detection signal when an address for accessing a specific memory area among memory areas of volatile semiconductor memory is concentrically received. In the case that the concentration access detection signal is generated, the memory controller includes a controller for easing or preventing corruption of data which memory cells of the specific memory area and/or memory cells of memory areas adjacent to the specific memory area hold.

Abstract: An information storage device includes a magnetic track and a magnetic domain wall moving unit. The magnetic track has a plurality of magnetic domains and a magnetic domain wall between each pair of adjacent magnetic domains. The magnetic domain wall moving unit is configured to move at least the magnetic domain wall. The information storage device further includes a magneto-resistive device configured to read information recorded on the magnetic track. The magneto-resistive device includes a pinned layer, a free layer and a separation layer arranged there between. The pinned layer has a fixed magnetization direction. The free layer is disposed between the pinned layer and the magnetic track, and has a magnetization easy axis, which is non-parallel to the magnetization direction of the pinned layer.