Abstract: Disclosed are a negative electrode for a rechargeable lithium battery that includes a plurality of non-sheet-shaped graphite particles, at least one silicon-based particle in a void formed by assembling the non-sheet-shaped graphite particles, and a sheet-shaped graphite powder between the non-sheet-shaped graphite particles, the void, or both thereof, wherein a size of the silicon particle is smaller than a length of the longest axis of the sheet-shaped graphite powder.

Abstract: There are provided a system for ablation utilizing multiple electrodes and a method for controlling the system. The system includes: a main amplification unit providing main radio frequency (RF) power by amplifying received power; a sub-amplification unit providing sub-RF power by amplifying received power; a first switching unit transmitting the main RF power provided by the main amplification unit to one of first to third electrodes; a second switching unit transmitting the sub-RF power provided by the sub-amplification unit to one of the first to third electrodes; and a control unit controlling the first and second switching units to apply the main RF power and the sub-RF power to a pair of respective electrodes previously selected from the first to third electrodes.

Abstract: A method of providing a stereoscopic image from a monocular image is provided. The method may include the steps of: (a) partitioning an original image; (b) generating a combination image by combining a partitioned image with the original image, and receiving input of specific image object marker information and input of background marker information on the combination image, where the specific image object marker information relates to a specific image object of which extraction is desired; (c) extracting a specific image object from the combination image; (d) performing defocusing by applying area processing on the combination image, in which the specific image object has been extracted, to adjust blurring; and (e) adjusting a depth value of the specific image object.

Abstract: A radio frequency (RF) connector assembly for a vehicle includes a male connector and a female connector to which a plurality of cables are assembled, respectively. A female housing of the female connector is inserted into a male housing of the male connector to be coupled to each other. Simultaneously, a female terminal module provided in the female connector for a signal transmission of the cables and a male terminal block provided in the male connector for the signal transmission of the cables contact each other to transmit signals. The male connector may include a board with signal pins on one side and a ground plane on the other side and may also include a cover with a plurality of pressurizing protrusions to downwardly press the cables whereby terminals of the cables may stably contact each of a plurality of male signal pins thereunder.

Abstract: Disclosed are a negative active material for a rechargeable lithium battery including a silicon-based material including SiOx particles, where 0<x<2, and a Si—Fe—containing alloy positioned on the surface of the SiOx(0<x<2) particles, a method of preparing the same, and a negative electrode and a rechargeable lithium battery including the same.

Abstract: There is provided a semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor material, and a plurality of light-emitting nanostructures disposed on the base layer to be spaced apart from each other, and including first conductivity-type semiconductor cores, active layers, and second conductivity-type semiconductor layers. The first conductivity-type semiconductor cores include rod layers extending upwardly from the base layer, and capping layers disposed on the rod layers. Heights of the rod layers are different in at least a portion of the plurality of light-emitting nanostructures, and heights of the capping layers are different in at least a portion of the plurality of light-emitting nanostructures.

Abstract: A method for manufacturing a semiconductor light emitting device may include steps of forming a mask layer and a mold layer having a plurality of openings exposing portions of a base layer, forming a plurality of first conductivity-type semiconductor cores each including a body portion extending through each of the openings from the base layer and a tip portion disposed on the body portion and having a conical shape, and forming an active layer and a second conductivity-type semiconductor layer on each of the plurality of first conductivity-type semiconductor cores. The step of forming the plurality of first conductivity-type semiconductor cores may include forming a first region such that a vertex of the tip portion is positioned on a central vertical axis of the body portion, removing the mold layer, and forming an additional growth region on the first region such that the body portion has a hexagonal prism shape.

Abstract: A four transistor layout can include an isolation region that defines an active region, the active region extending along first and second different directions. A common source region of the four transistors extends from a center of the active region along both the first and second directions to define four quadrants of the active region that are outside the common source region. Four drain regions are provided, a respective one of which is in a respective one of the four quadrants and spaced apart from the common source region. Finally, four gate electrodes are provided, a respective one of which is in a respective one of the four quadrants between the common source region and a respective one of the four drain regions. A respective gate electrode includes a vertex and first and second extending portions, the first extending portions extending from the vertex along the first direction and the second extending portions extending from the vertex along the second direction.

Abstract: There is provided a nanostructure semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor, an insulating layer disposed on the base layer and having a plurality of openings, and a plurality of light-emitting nanostructures disposed the plurality of openings, respectively. Each of light-emitting nanostructures includes a nanocore formed of a first conductivity-type semiconductor, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore. The plurality of light-emitting nanostructures are formed through the same growth process and divided into n groups (where n is an integer of two or more), each of which having at least two light-emitting nanostructures. At least one of a diameter, a height, and a pitch of the nanocores is different by group so that the active layers emit light having different wavelengths by group.

Abstract: An automatic transmission fluid (ATF) warmer coolant circulation system may include an ATF warmer connected to an engine oil cooler, in which engine coolant is circulated to the ATF warmer to preheat automatic transmission fluid of a transmission below an operation temperature of the ATF warmer.

Abstract: The present disclosure describes methods of an interface adhesion improvement methods used on a transparent substrate for OLED or thin film transistor applications. In one embodiment, a method of forming a buffer layer on a surface of a substrate includes providing a substrate having an planarization material disposed thereon in a processing chamber, supplying a buffer layer gas mixture including a silicon containing gas into the processing chamber, controlling a substrate temperature less than about 100 degrees Celsius, forming a buffer layer on the planarization material, supplying an encapsulating barrier layer deposition gas mixture including a silicon containing gas and a nitrogen containing gas into the processing chamber, and forming an encapsulating barrier layer on the buffer layer.

Abstract: Disclosed are a negative electrode for a rechargeable lithium battery that includes a plurality of non-sheet-shaped graphite particles, at least one silicon-based particle in a void formed by assembling the non-sheet-shaped graphite particles, and a sheet-shaped graphite powder between the non-sheet-shaped graphite particles, the void, or both thereof, wherein a size of the silicon particle is smaller than a length of the longest axis of the sheet-shaped graphite powder.

Abstract: A four transistor layout can include an isolation region that defines an active region, the active region extending along first and second different directions. A common source region of the four transistors extends from a center of the active region along both the first and second directions to define four quadrants of the active region that are outside the common source region. Four drain regions are provided, a respective one of which is in a respective one of the four quadrants and spaced apart from the common source region. Finally, four gate electrodes are provided, a respective one of which is in a respective one of the four quadrants between the common source region and a respective one of the four drain regions. A respective gate electrode includes a vertex and first and second extending portions, the first extending portions extending from the vertex along the first direction and the second extending portions extending from the vertex along the second direction.

Abstract: A negative active material for a rechargeable lithium battery and a rechargeable lithium battery including the same are provided, and the negative active material includes a Si-based alloy; a first graphite material; and a second graphite material having a different average particle diameter from the first graphite material.

Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.

Abstract: There is provided a semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor material, and a plurality of light-emitting nanostructures disposed on the base layer to be spaced apart from each other, and including first conductivity-type semiconductor cores, active layers, and second conductivity-type semiconductor layers. The first conductivity-type semiconductor cores include rod layers extending upwardly from the base layer, and capping layers disposed on the rod layers. Heights of the rod layers are different in at least a portion of the plurality of light-emitting nanostructures, and heights of the capping layers are different in at least a portion of the plurality of light-emitting nanostructures.

Abstract: There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions.

Abstract: According to an example embodiment, a method of manufacturing a nanostructure semiconductor light-emitting device includes forming nanocores of a first-conductivity type nitride semiconductor material on abase layer to be spaced apart from each other, and forming a multilayer shell including an active layer and a second-conductivity type nitride semiconductor layers on surfaces of each of the nanocores. At least a portion the multilayer shell is formed by controlling at least one process parameter of a flux of source gas, a flow rate of source gas, a chamber pressure, a growth temperature, and a growth rate so as to have a higher film thickness uniformity.

Abstract: Embodiments of the disclosure generally provide methods of forming a silicon containing layers in TFT devices. The silicon can be used to form the active channel in a LTPS TFT or be utilized as an element in a gate dielectric layer, a passivation layer or even an etch stop layer. The silicon containing layer is deposited by a vapor deposition process whereby an inert gas, such as argon, is introduced along with the silicon precursor. The inert gas functions to drive out weak, dangling silicon-hydrogen bonds or silicon-silicon bonds so that strong silicon-silicon or silicon-oxygen bonds remain to form a substantially hydrogen free silicon containing layer.

Abstract: A nanostructure semiconductor light emitting device may include a first conductivity-type semiconductor base layer, a mask layer disposed on the base layer and having a plurality of openings exposing portions of the base layer, a plurality of light emitting nanostructures disposed in the plurality of openings, and a polycrystalline current suppressing layer disposed on the mask layer. At least a portion of the polycrystalline current suppressing layer is disposed below the second conductivity-type semiconductor layer. Each light emitting nanostructure includes a first conductivity-type semiconductor nanocore, an active layer, and a second conductivity-type semiconductor layer.