Abstract: An automatic observation apparatus of sky climate conditions is provided in which an opening and closing device is designed such that a lid moves upward and downward by an elevator so as to open and close the upper portion of an observer and thus, although it snows in winter, the lid moves upward and downward while maintaining a state in which snow is accumulated on the lid, the snow does not collapse due to movement of the lid and does not fall onto a transparent cover of the observer, and thereby obstruction of a visual field of a camera by snow is prevented.

Abstract: A method and apparatus for depositing a material layer, such as encapsulating film, onto a substrate is described. In one embodiment, an encapsulating film formation method includes delivering a gas mixture into a processing chamber, the gas mixture comprising a silicone-containing gas, a first nitrogen-containing gas, a second nitrogen-containing gas and hydrogen gas; energizing the gas mixture within the processing chamber by applying between about 0.350 watts/cm2 to about 0.903 watts/cm2 to a gas distribution plate assembly spaced about 800 mils to about 1800 mils above a substrate positioned within the processing chamber; maintaining the energized gas mixture within the processing chamber at a pressure of between about 0.5 Torr to about 3.0 Torr; and depositing an inorganic encapsulating film on the substrate in the presence of the energized gas mixture. In other embodiments, an organic dielectric layer is sandwiched between inorganic encapsulating layers.

Abstract: Provided is a dielectric ceramic composition comprising: 40-70 wt % of a borosilicate-based glass frit comprising 50-80 mol % of SiO2, 15-20 mol % of B2O3, 0.1-5 mol % of one or more alkali metal oxide selected from Li2O and Na2O, and 0.1-30 mol % of one or more alkaline earth metal oxide selected from MgO, CaO, SrO and ZnO; and 30-60 wt % of a ceramic filler represented by Chemical Formula 1: (Zn1-xMgx)2SiO4??(1) wherein 0?x?1. The disclosed low temperature co-fired ceramic (LTCC) composition is sinterable at low temperature, with a relative density of at least 95% in the temperature range of 800-900° C., is capable of minimizing electric loss, with a dielectric constant of 4-7 and a very low dielectric loss, and is applicable from the low-frequency band to the millimeter-wave band of 60 GHz or more.

Abstract: Disclosed are a planetary gear system using tow input characteristics, a gear module thereof, and a method for controlling the same, which exhibit an effect of the gear shift using two motor characteristics, and also a gear module thereof, and a method for controlling the same. A gear system including a first gear unit; a second gear unit that rotates to mesh with the first gear unit; a third gear unit that rotates to mesh with at least one of the first gear unit and the second gear unit; and a driving source that generates a driving force. Two gear units of the first to third gear units serve as input parts to which driving forces from the driving source are transmitted, respectively, and the rest one gear unit serves as an output part from which a resultant force obtained by combining the driving forces is output.

Abstract: The present invention relates to an apparatus for measurement of the surface profile detecting 2D-image of the surface of the object.

Abstract: The present invention generally includes a coupling between components. When igniting a plasma remote from a processing chamber, the reactive gas ions may travel to the processing chamber through numerous components. The reactive gas ions may be quite hot and cause the various components to become very hot and thus, the seals between apparatus components may fail. Therefore, it may be beneficial to cool any metallic components through which the reactive gas ions may travel. However, at the interface between the cooled metallic component and a ceramic component, the ceramic component may experience a temperature gradient sufficient to crack the ceramic material due to the heat of the reactive gas ions and the coolness of the metallic component. Therefore, extending a flange of the metallic component into the ceramic component may lessen the temperature gradient at the interface and reduce cracking of the ceramic component.

Abstract: The present invention generally comprises a method and an apparatus for guiding the flow of processing gases away from chamber walls and slit valve opening. By controlling the flow path of the process gases within a processing chamber, undesirable deposition upon chamber walls and within slit valve openings may be reduced. By reducing deposition in slit valve openings, flaking may be reduced. By reducing deposition on chamber walls, the time between chamber cleaning may be increased. Thus, guiding the flow of processing gases within the processing chamber may increase substrate throughput.

Abstract: Embodiments of the disclosure generally provide methods of forming a silicon containing layers in TFT devices. The silicon can be used to form the active channel in a LTPS TFT or be utilized as an element in a gate dielectric layer, a passivation layer or even an etch stop layer. The silicon containing layer is deposited by a vapor deposition process whereby an inert gas, such as argon, is introduced along with the silicon precursor. The inert gas functions to drive out weak, dangling silicon-hydrogen bonds or silicon-silicon bonds so that strong silicon-silicon or silicon-oxygen bonds remain to form a substantially hydrogen free silicon containing layer.

Abstract: An example semiconductor device includes a trench formed in a semiconductor substrate to define an active region, a filling dielectric layer provided within the trench, an oxide layer provided between the filling dielectric layer and the trench, a nitride layer provided between the oxide layer and the filling dielectric layer, and a barrier layer provided between the oxide layer and the nitride layer.

Abstract: Provided is a compound found by screening a material for inhibiting an osteopontin, in which the material for inhibiting the osteopontin can increase effectiveness as an excellent material for inhibiting an osteoporosis.

Abstract: Provided is a dielectric ceramic composition comprising: 40-70 wt % of a borosilicate-based glass frit comprising 50-80 mol % of SiO2, 15-20 mol % of B2O3, 0.1-5 mol % of one or more alkali metal oxide selected from Li2O and Na2O, and 0.1-30 mol % of one or more alkaline earth metal oxide selected from MgO, CaO, SrO and ZnO; and 30-60 wt % of a ceramic filler represented by Chemical Formula 1: (Zn1-xMgx)2SiO4??(1) wherein 0?x?1. The disclosed low temperature co-fired ceramic (LTCC) composition is sinterable at low temperature, with a relative density of at least 95% in the temperature range of 800-900° C., is capable of minimizing electric loss, with a dielectric constant of 4-7 and a very low dielectric loss, and is applicable from the low-frequency band to the millimeter-wave band of 60 GHz or more.

Abstract: The semiconductor device includes a substrate including an isolation region and an active region, the active region being defined by the isolation region; and a gate line including a first region on the active region, the first region including an open portion, and the open portion exposing a part of the active region, and a second region connected to the first region, the second region intersecting a boundary between the active region and the isolation region, a width of the second region being narrower than a width of the first region.

Abstract: An anti-fuse device includes a gate electrode on a semiconductor substrate, a gate insulating layer between the semiconductor substrate and the gate electrode, junction regions in the semiconductor substrate adjacent the gate electrode, and at least one anti-breakdown material layer between the junction regions, the gate insulating layer being between the gate electrode and the anti-breakdown material layer.

Abstract: A method of fabricating a semiconductor device is disclosed, the method generally including the steps of: forming a gate dielectric layer on a semiconductor substrate;forming a gate electrode on the gate dielectric layer;forming an etch stop layer on the gate electrode;forming a capacitor on the semiconductor substrate adjacent to the gate electrode;after forming the capacitor, forming a contact hole passing through the etch stop layer on the gate electrode;and, diffusing deuterium into the gate dielectric layer through the contact hole.

Abstract: Semiconductor devices are provided including a gate across an active region of a substrate; a source region and a drain region in the active region on either side of the gate and spaced apart from each other; a main channel impurity region in the active region between the source and drain regions and having a first channel impurity concentration; and a lightly doped channel impurity region in the active region adjacent to the drain region. The lightly doped channel impurity region has the same conductivity type as the main channel impurity region and a second channel impurity concentration, lower than the first channel impurity concentration. The lightly doped channel impurity region and the main channel impurity region contain a first element. The lightly doped channel impurity region also contains a second element, which is a different Group element from the first element.

Abstract: Embodiments of the present invention provide methods for depositing a nitrogen-containing material on large-sized substrates disposed in a processing chamber. In one embodiment, a method includes processing a batch of substrates within a processing chamber to deposit a nitrogen-containing material on a substrate from the batch of substrates, and performing a seasoning process at predetermined intervals during processing the batch of substrates to deposit a conductive seasoning layer over a surface of a chamber component disposed in the processing chamber. The chamber component may include a gas distribution plate fabricated from a bare aluminum without anodizing. In one example, the conductive seasoning layer may include amorphous silicon, doped amorphous silicon, doped silicon, doped polysilicon, doped silicon carbide, or the like.

Abstract: A four transistor layout can include an isolation region that defines an active region, the active region extending along first and second different directions. A common source region of the four transistors extends from a center of the active region along both the first and second directions to define four quadrants of the active region that are outside the common source region. Four drain regions are provided, a respective one of which is in a respective one of the four quadrants and spaced apart from the common source region. Finally, four gate electrodes are provided, a respective one of which is in a respective one of the four quadrants between the common source region and a respective one of the four drain regions. A respective gate electrode includes a vertex and first and second extending portions, the first extending portions extending from the vertex along the first direction and the second extending portions extending from the vertex along the second direction.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate, a first node impurity region, a second node impurity region, a third node impurity region, and an insulating layer. The first through third node impurity regions are disposed in the semiconductor substrate. Each of the first through third node impurity regions has a longitudinal length, a transverse length and a thickness respectively corresponding to first through third directions, which are perpendicular with respect to each other. The first node impurity region is parallel to the second and third node impurity regions, which are disposed in the substantially same line. The insulating layer is located between the first through third node impurity regions in the semiconductor substrate.

Abstract: An asymmetrically grounded susceptor used in a plasma processing chamber for chemical vapor deposition onto large rectangular panels supported on and grounded by the susceptor. A plurality of grounding straps are connected between the periphery of the susceptor to the grounded vacuum chamber to shorten the grounding paths for RF electrons. Flexible straps allow the susceptor to vertically move. The straps provide a conductance to ground which is asymmetric around the periphery. The straps may be evenly spaced but have different thicknesses or different shapes or be removed from available grounding point and hence provide different RF conductances. The asymmetry is selected to improve the deposition uniformity and other qualities of the PECVD deposited film.

Abstract: The film holder located at a lingual side of the teeth inside mouth to support a film for periapical radiography to obtain the radiographic image of the teeth and the teeth supporting structures comprises a bite portion temporarily fixed to the teeth; a film support portion rotatably mounted with respect to the bite portion and located at the lingual side of the teeth inside the mouth; and a film indicator rotatably mounted with respect to the bite portion, rotated with the film support portion, and located outside the mouth. Since the bite portion is detached from the film support portion, an angle of the film support portion can be varied to correspond to various oral structures of patients. Since angle change of the film support portion can be recognized externally, an irradiation angle of a radiation center line can easily be adjusted.