Abstract: Discussed is a battery that may include at least one battery module including at least one battery cell, a case tray configured to support the at least one battery module, a case cover coupled with the case tray to cover the at least one battery module, a sealing gasket disposed between the case tray and the case cover to prevent penetration of moisture or foreign substance into the at least one battery module, and a reinforcing unit provided to the case cover to be disposed adjacent to the sealing gasket and configured to prevent twisting of the case cover when the case tray and the case cover are coupled.

Abstract: A railess variable seatback type rear seat includes: a linear movement device configured to convert a rotation of a motor into a linear movement; a sliding movement device configured to convert the linear movement into a sliding movement in which a seat cushion is pushed forward or backward; and a reclining angle change device configured to convert the sliding movement into a reclining movement, and to fold a seatback, which is connected to the seat cushion, forward or to recline the seatback backward.

Abstract: Discussed is a battery pack that may include at least one battery module including at least one battery cell; a case tray configured to support the at least one battery module; a tray cover coupled to the case tray; and at least one bushing gasket configured to connect the case tray and the tray cover and to support the case tray on a plurality of points.

Abstract: Provided is a display device comprising a substrate, a first data line and a second data line disposed on the substrate and extended in a first direction, an anode electrode disposed on the first data line and the second data line, a pixel-defining film disposed over the anode electrode and defining an emission area, an organic light-emitting layer disposed on the anode electrode, and a cathode electrode disposed on the organic light-emitting layer, wherein each of the first data line and the second data line has a curved shape when viewed from a top where the first anode electrode and the second anode electrode overlap the anode electrode.

Abstract: A display device includes a light emitting element including a pixel electrode, a light emitting layer, and a common electrode. A capping layer is disposed on the common electrode. An auxiliary layer is disposed on the capping layer. A thin film encapsulation layer includes a first encapsulation layer, a second encapsulation layer, and a third encapsulation layer. The first encapsulation layer includes a first inorganic insulating layer including silicon nitride; a second inorganic insulating layer including silicon oxide; and a third inorganic insulating layer including silicon oxynitride. The auxiliary layer has a thickness of 200 ? to 1400 ?, the first inorganic insulating layer has a thickness of 400 ? to 3500 ?, the second inorganic insulating layer has a thickness of 200 ? to 2400 ?, and the third inorganic insulating layer has a thickness of 4000 ? or more.

Abstract: A system for predicting a negative pressure of a brake booster of a vehicle includes: a driving information detector detecting driving information related to driving of the vehicle; and a controller determining a negative pressure of an intake manifold based on a pressure of the intake manifold and an atmospheric pressure which is the driving information and including a booster negative pressure predictor predicting the negative pressure of the brake booster by integrating over time a change rate according to a charging rate and a discharging rate of the negative pressure determined using a negative pressure of the brake booster determined in a previous cycle according to a logic for predicting the negative pressure of the brake booster and the negative pressure of the intake manifold of a current cycle and an imitated brake pedal force signal of the current cycle imitating an acceleration of the vehicle.

Abstract: The present invention relates to a catalyst for hydrogenation of an aromatic compound, which is capable of greatly reducing the inactivation of a catalyst by using a support including a magnesium-based spinel structure, and a preparation method therefor.

Abstract: A system for predicting a negative pressure of a brake booster of a vehicle includes: a driving information detector configured to detect driving information according to driving of the vehicle; and a controller configured to calculate a negative pressure of an intake manifold based on a pressure of the intake manifold and an atmospheric pressure that is the driving information and including a booster negative pressure predictor configured to predict the negative pressure of the brake booster by integrating over time a change rate according to a charging rate and a discharging rate of the negative pressure calculated using a previous negative pressure of the brake booster calculated in a previous cycle according to a logic for predicting the negative pressure of the brake booster and the negative pressure of the intake manifold and a brake pedal force of a current cycle.

Abstract: Discussed is a protection circuit module that may include a printed circuit board configured to be connected to a positive lead part and a negative lead part connected to a battery cell, wherein the printed circuit board includes an upper layer bonded to the positive lead part and the negative lead part so as to be electrically connected; an intermediate layer including a first insulating layer including a material containing an epoxy resin and provided below the upper layer; and a laser reflective layer provided between the upper layer and the first insulating layer and reflecting light from a laser.

Abstract: An integrated circuit device includes a substrate having source and drain recesses therein that are lined with respective silicon-germanium liners and filled with doped semiconductor source and drain regions. A stacked plurality of semiconductor channel layers are provided, which are separated vertically from each other within the substrate by corresponding buried insulated gate electrode regions that extend laterally between the silicon-germanium liners. An insulated gate electrode is provided on an uppermost one of the plurality of semiconductor channel layers. The silicon-germanium liners may be doped with carbon.

Abstract: Disclosed is a disc-shaped sample chamber for collecting molten metal, the chamber comprising: a chamber body having a left body and a right body bonded to each other to define a disc-shaped sample space therebetween; an inlet extending upward from the chamber body and connecting the sample space with the outside; and a welded bonding portion disposed on at least one lateral face of the chamber body for bonding the left body and the right body to each other. Further, a probe having the chamber is disclosed.

Abstract: A three-dimensional semiconductor memory device and a method of manufacturing the same. The device may include a substrate including a cell array region and a connection region, an electrode structure including electrodes vertically stacked on the substrate, a plurality of first vertical structures penetrating the electrode structures on the cell array region, and a plurality of second vertical structures penetrating the electrode structures on the connection region. Each of the first and second vertical structures may include a lower semiconductor pattern connected to the substrate and an upper semiconductor pattern connected to the lower semiconductor pattern.

Abstract: Provided is a method for preparing a carbon-13-containing graphene quantum dot available as an MRI contrast medium, a carbon-13-containing graphene quantum dot prepared by the method, and an MRI contrast medium comprising the carbon-13 graphene quantum dot.

Abstract: A nonvolatile memory device with improved operation performance and reliability, and a method for fabricating the same are provided. The nonvolatile memory device includes a substrate, a peripheral circuit structure on the substrate, a mold structure including a plurality of insulating patterns and a plurality of gate electrodes stacked alternately on the peripheral circuit structure, a channel structure penetrating the mold structure, a first impurity pattern in contact with first portions of the channel structure and having a first conductivity type, on the mold structure, and a second impurity pattern in contact with second portions of the channel structure and having a second conductivity type different from the first conductivity type, on the mold structure.

Abstract: A nonvolatile memory device with improved operation performance and reliability, and a method for fabricating the same are provided. The nonvolatile memory device includes a substrate, a peripheral circuit structure on the substrate, a mold structure including a plurality of insulating patterns and a plurality of gate electrodes stacked alternately on the peripheral circuit structure, a channel structure penetrating the mold structure, a first impurity pattern in contact with first portions of the channel structure and having a first conductivity type, on the mold structure, and a second impurity pattern in contact with second portions of the channel structure and having a second conductivity type different from the first conductivity type, on the mold structure.

Abstract: A compressor vane is provided. The compressor vane may include a first surface directed toward air introduced into a compressor, a second surface directed in a direction opposite to the first surface, and two tangent lines in which the first and second surfaces meet, wherein a rate of change, with respect to a height of the compressor vane, of a maximum separation distance, between the first surface and the second surface, divided by a distance from one to the other of the two tangent lines in a cross-section at one position of the height of the compressor vane in a direction starting from a portion of the compressor vane closest to a center tie rod and toward a compressor housing varies with the height of the compressor vane away from the portion of the compressor vane closest to the center tie rod.

Abstract: A semiconductor device includes a substrate including a memory cell region and a connection region, a plurality of gate electrodes in the memory cell region and the connection region, a plurality of channel structures passing through the plurality of gate electrodes and extending in a vertical direction in the memory cell region, and a plurality of pad layers extending in a first direction from each of the plurality of gate electrodes in the connection region. The plurality of pad layers is disposed in a stepped form in a second direction. The device further includes a plurality of dummy lines arranged in one row in the first direction between two pad layers adjacent to each other in the second direction and disposed apart from one another with a pad connection region therebetween in the first direction. The pad connection region overlaps two pad layers successively disposed in the first direction.

Abstract: A compressor cleaning apparatus to clean a compressor of a gas turbine is provided. The compressor cleaning apparatus includes a nozzle configured to inject a cleaning fluid into an interior of a compressor, a fluid supply tube connected to the nozzle to supply the cleaning fluid to the nozzle, a first cleaning fluid supply connected to the fluid supply tube to supply a first cleaning fluid, and a second cleaning fluid supply connected to the fluid supply tube to supply a second cleaning fluid having a temperature higher than that of the first cleaning fluid.

Abstract: Disclosed is a disc-shaped sample chamber for collecting molten metal, the chamber comprising: a chamber body having a left body and a right body bonded to each other to define a disc-shaped sample space therebetween; an inlet extending upward from the chamber body and connecting the sample space with the outside; and a welded bonding portion disposed on at least one lateral face of the chamber body for bonding the left body and the right body to each other. Further, a probe having the chamber is disclosed.

Abstract: The present disclosure relates to wear-resistant steel comprising, by weight, carbon (C): 0.19 to 0.28%, silicon (Si): 0.1 to 0.7%, manganese (Mn): 0.6 to 1.6%, phosphorus (P): 0.05% or less, sulfur (S): 0.02% or less, aluminum (Al): 0.07% or less, chromium (Cr): 0.01 to 0.5%, nickel (Ni): 0.01 to 3.0%, copper (Cu): 0.01 to 1.5%, molybdenum (Mo): 0.01 to 0.5%, boron (B): 50 ppm or less, and cobalt (Co): 0.02% or less, further comprising one or more selected from the group consisting of titanium (Ti): 0.02% or less, niobium (Nb): 0.05% or less, vanadium (V): 0.05% or less, and calcium (Ca): 2 to 100 ppm, and comprising a remainder of iron (Fe) and other unavoidable impurities, wherein C, Ni, and Cu satisfy the following relationship 1, wherein a microstructure includes 97 area % or more of martensite: C×Ni×Cu?0.05.??[Relationship 1] .