Abstract: The present disclosure relates to wear-resistant steel comprising, by weight, carbon (C): 0.19 to 0.28%, silicon (Si): 0.1 to 0.7%, manganese (Mn): 0.6 to 1.6%, phosphorus (P): 0.05% or less, sulfur (S): 0.02% or less, aluminum (Al): 0.07% or less, chromium (Cr): 0.01 to 0.5%, nickel (Ni): 0.01 to 3.0%, copper (Cu): 0.01 to 1.5%, molybdenum (Mo): 0.01 to 0.5%, boron (B): 50 ppm or less, and cobalt (Co): 0.02% or less, further comprising one or more selected from the group consisting of titanium (Ti): 0.02% or less, niobium (Nb): 0.05% or less, vanadium (V): 0.05% or less, and calcium (Ca): 2 to 100 ppm, and comprising a remainder of iron (Fe) and other unavoidable impurities, wherein C, Ni, and Cu satisfy the following relationship 1, wherein a microstructure includes 97 area % or more of martensite: C×Ni×Cu?0.05.??[Relationship 1] .

Abstract: A vertical type semiconductor device includes insulation patterns on a substrate and spaced apart from each other in a first direction perpendicular to a top surface of the substrate, a channel structure on the substrate and penetrating through the insulation patterns, a first conductive pattern partially filling a gap between the insulation patterns adjacent to each other in the first direction and the channel structure and having a slit in a surface thereof, the slit extending in a direction parallel with the top surface of the substrate, and a second conductive pattern on the first conductive pattern in the gap and filling the slit.

Abstract: The present invention relates to wear-resistant steel used in construction machines, among others, and more specifically, to high-hardness wear-resistant steel having excellent wear resistance to a thickness of 40 to 130 t (mm) as well as high strength and impact toughness, and to a method for manufacturing the high-hardness wear-resistant steel.

Abstract: A wear-resistant steel having excellent hardness and impact toughness and a method for producing same can include: 0.29-0.37 wt % of carbon, 0.1-0.7 wt % of silicon, 0.6-1.6 wt % of manganese, 0.05 wt % or less of phosphorus, 0.02 wt % or less of sulfur, 0.07 wt % or less of aluminum, 0.1-1.5 wt % of chromium, 0.01-0.8 wt % of molybdenum, 0.01-0.08 wt % of vanadium, 50 ppm or less of boron, and 0.02 wt % or less of cobalt; and optionally one or more of 0.5 wt % or less of nickel, 0.5 wt % or less of copper, 0.02 wt % or less of titanium, 0.05 wt % or less of niobium, and 2-100 ppm of calcium; with the remainder of Fe and other inevitable impurities.

Abstract: One aspect of the present invention aims to provide high-hardness wear-resistant steel having excellent wear resistance to a thickness of 40t (mm) as well as high strength and impact toughness, and a method for manufacturing same.

Abstract: A system for changing a height of a hanger mounting plate, may include a frame; a hanger arm fixing device mounted at an upper side of the frame in a longitudinal direction of the vehicle body to be movable in the longitudinal direction of the vehicle body and fixing both sides of the connecting blocks; a pin fixing device which is mounted at a center portion of the frame to be movable in a width direction of the vehicle body and separates or couples the coupling pin from/to the connecting block; and a mounting plate height adjusting device mounted at a lower side of the center portion of the frame to be movable in the height direction of the vehicle body in a state in which the mounting plate height adjusting device supports a lower portion of the mounting plate, and adjusting a height of the mounting plate.

Abstract: A compressor cleaning apparatus to clean a compressor of a gas turbine is provided. The compressor cleaning apparatus includes a nozzle configured to inject a cleaning fluid into an interior of a compressor, a fluid supply tube connected to the nozzle to supply the cleaning fluid to the nozzle, a first cleaning fluid supply connected to the fluid supply tube to supply a first cleaning fluid, and a second cleaning fluid supply connected to the fluid supply tube to supply a second cleaning fluid having a temperature higher than that of the first cleaning fluid.

Abstract: The present invention provides a steel material, and a method of manufacturing the same. The steel material comprises, by weight %, 0.02 to 0.07% of carbon, 0.1 to 0.5% of silicon, 0.2 to 0.7% of manganese, 0.05% or less of phosphorus, 0.02% or less of sulfur, 0.07% or less of aluminum, 0.1 to 0.5% of chromium, 0.3 to 1.0% of molybdenum, 0.05% or less of vanadium, 50 ppm or less of boron, 0.01 to 0.5% of nickel, 0.5% or less of copper, 0.02% or less of titanium, 0.05% or less of niobium, and 2 to 100 ppm of calcium, and the balance of Fe and other unavoidable impurities, and satisfies relational expressions 1 and 2 mentioned below, wherein the microstructure thereof contains, by area %, 90% or more of martensite and 10% or less of bainite. 260?1589×[C]+228?340??[Relational Expression 1] [C]/[Mo]?0.

Abstract: One embodiment of the present disclosure provides an abrasion resistant steel having excellent hardness and impact toughness, and a manufacturing method therefor, the steel comprising, by wt %, 0.33-0.42% of C, 0.1-0.7% of Si, 0.6-1.6% of Mn, 0.05% or less of P, 0.02% or less of S, 0.07% or less of Al, 0.55-5.0% of Ni, 0.01-1.5% of Cu, 0.01-0.8% of Cr, 0.01-0.8% of Mo, 50 ppm or less of B, and 0.02% or less of Co, further comprising one or more selected from the group consisting of 0.02% or less of Ti, 0.05% or less of Nb, 0.05% or less of V and 2-100 ppm of Ca, and comprising the balance of Fe and other inevitable impurities, wherein C and Ni satisfy the following relation 1, and the microstructure comprises 95 area % or more of martensite and 5% or less of bainite (including 0%). [Relation 1] [C]×[Ni]?0.

Abstract: One embodiment of the present invention provides an ultrahigh-strength steel having excellent cold workability and SSC resistance, comprising, by wt %, carbon (C) in an amount of more than 0.08% and equal to or less than 0.2%, 0.05-0.5% of silicon (Si), 0.5-2% of manganese (Mn), 0.005-0.1% of aluminum (Al), 0.01% or less of phosphorus (P), 0.0015% or less of sulfur (S), 0.001-0.03% of niobium (Nb), 0.001-0.03% of vanadium (V), 0.001-0.03% of titanium (Ti), 0.01-1% of chromium (Cr), 0.01-0.15% of molybdenum (Mo), 0.01-0.5% of copper (Cu), 0.05-4% of nickel (Ni), 0.0005-0.

Abstract: A nonvolatile memory device with improved operation performance and reliability, and a method for fabricating the same are provided. The nonvolatile memory device includes a substrate, a peripheral circuit structure on the substrate, a mold structure including a plurality of insulating patterns and a plurality of gate electrodes stacked alternately on the peripheral circuit structure, a channel structure penetrating the mold structure, a first impurity pattern in contact with first portions of the channel structure and having a first conductivity type, on the mold structure, and a second impurity pattern in contact with second portions of the channel structure and having a second conductivity type different from the first conductivity type, on the mold structure.

Abstract: An automated guided vehicle control system includes an automated guided vehicle (AGV) transporting parts by moving along a guide line designed on a floor of a factory; and a server displaying a guide line map of the factory on a screen through an AGV path setting UI, setting a transport path of the AGV depending on selection of a node which is present in the guide line and AGV motion information considering a link direction between neighboring nodes included in the transport path and transmitting the set transport path and motion information to the AGV through a wireless relay.

Abstract: The present invention relates to pressure vessel steel to be used in a hydrogen sulfide atmosphere, and relates to pressure vessel steel having excellent resistance to hydrogen induced cracking (HIC), and a manufacturing method therefor.

Abstract: A three-dimensional semiconductor device includes: a common source line passing between a first channel structure and a second channel structure and between a first dummy channel structure and a second dummy channel structure, in which a distance in a first direction between the common source line and the first channel structure is equal to a distance in the first direction between the common source line and the second channel structure, and a distance in the first direction between the common source line and the first dummy channel structure is different from a distance in the first direction between the common source line and the second dummy channel structure.

Abstract: A nonvolatile memory device with improved operation performance and reliability, and a method for fabricating the same are provided. The nonvolatile memory device includes a substrate, a peripheral circuit structure on the substrate, a mold structure including a plurality of insulating patterns and a plurality of gate electrodes stacked alternately on the peripheral circuit structure, a channel structure penetrating the mold structure, a first impurity pattern in contact with first portions of the channel structure and having a first conductivity type, on the mold structure, and a second impurity pattern in contact with second portions of the channel structure and having a second conductivity type different from the first conductivity type, on the mold structure.

Abstract: A semiconductor device includes a substrate including a memory cell region and a connection region, a plurality of gate electrodes in the memory cell region and the connection region, a plurality of channel structures passing through the plurality of gate electrodes and extending in a vertical direction in the memory cell region, and a plurality of pad layers extending in a first direction from each of the plurality of gate electrodes in the connection region. The plurality of pad layers is disposed in a stepped form in a second direction. The device further includes a plurality of dummy lines arranged in one row in the first direction between two pad layers adjacent to each other in the second direction and disposed apart from one another with a pad connection region therebetween in the first direction. The pad connection region overlaps two pad layers successively disposed in the first direction.

Abstract: An embodiment of the present invention provides wear-resistant steel having excellent hardness and impact toughness and a method for producing same, wherein the wear-resistant steel comprises: 0.29-0.37 wt % of carbon (C), 0.1-0.7 wt % of silicon (Si), 0.6-1.6 wt % of manganese (Mn), 0.05 wt % or less of phosphorus (P), 0.02 wt % or less of sulfur (S), 0.07 wt % or less of aluminum (Al), 0.1-1.5 wt % of chromium (Cr), 0.01-0.8 wt % of molybdenum (Mo), 0.01-0.08 wt % of vanadium (V), 50 ppm or less of boron (B), and 0.02 wt % or less of cobalt (Co); further comprises one or more selected from the group consisting of 0.5 wt % or less of nickel (Ni), 0.5 wt % or less of copper (Cu), 0.02 wt % or less of titanium (Ti), 0.05 wt % or less of niobium (Nb), and 2-100 ppm of calcium (Ca); and comprises the remainder of Fe and other inevitable impurities.

Abstract: A semiconductor device includes a substrate including a memory cell region and a connection region, a plurality of gate electrodes in the memory cell region and the connection region, a plurality of channel structures passing through the plurality of gate electrodes and extending in a vertical direction in the memory cell region, and a plurality of pad layers extending in a first direction from each of the plurality of gate electrodes in the connection region. The plurality of pad layers is disposed in a stepped form in a second direction. The device further includes a plurality of dummy lines arranged in one row in the first direction between two pad layers adjacent to each other in the second direction and disposed apart from one another with a pad connection region therebetween in the first direction. The pad connection region overlaps two pad layers successively disposed in the first direction.

Abstract: A semiconductor memory device includes a substrate including a cell array region and a pad region, a stack structure disposed on the cell array region and the pad region of the substrate and including gate electrodes, a device isolation layer vertically overlapping the stack structure and disposed in the pad region of the substrate, a dummy vertical channel portion penetrating the stack structure on the pad region of the substrate and disposed in the device isolation layer, and a dummy semiconductor pillar disposed between the dummy vertical channel portion and one portion of the substrate being in contact with one sidewall of the device isolation layer.

Abstract: A three-dimensional semiconductor memory device and a method of manufacturing the same. The device may include a substrate including a cell array region and a connection region, an electrode structure including electrodes vertically stacked on the substrate, a plurality of first vertical structures penetrating the electrode structures on the cell array region, and a plurality of second vertical structures penetrating the electrode structures on the connection region. Each of the first and second vertical structures may include a lower semiconductor pattern connected to the substrate and an upper semiconductor pattern connected to the lower semiconductor pattern.