Patents by Inventor Young Joo Eo

Young Joo Eo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160284901
    Abstract: Disclosed are a method of manufacturing a CI(G)S-based thin film including aging of a slurry composed of binary nanoparticles, and a CI(G)S-based thin film manufactured thereby. The method of manufacturing the CI(G)S-based thin film includes: preparing CI(G)S-based binary nanoparticles; mixing the binary nanoparticles, a solution precursor including a CI(G)S-based element, a solvent and a chelating agent, thus preparing a hybrid slurry; aging the hybrid slurry for 5 to 10 days; subjecting the aged hybrid slurry to coating, thus forming a CI(G)S-based thin film; and subjecting the CI(G)S-based thin film to heat treatment. Thereby, high reproducibility can be ensured upon manufacturing a CI(G)S-based thin film for solar cells, and thus reliability of the produced thin film can be increased.
    Type: Application
    Filed: August 30, 2013
    Publication date: September 29, 2016
    Inventors: Ara CHO, Kyung Hoon YOON, SeJin AHN, Jae Ho YUN, Young Joo EO, Jihye GWAK, SeoungKyu AHN, Jun Sik CHO, Jin Su YOO, Kihwan KIM, Joo Hyung PARK
  • Patent number: 9437761
    Abstract: Disclosed is a method of forming a chalcopyrite light-absorbing layer for a solar cell, including: forming a thin film including a chalcopyrite compound precursor; and radiating light on the thin film, wherein the chalcopyrite compound precursor absorbs light energy and is thus crystallized. When forming the chalcopyrite light-absorbing layer, light, but not heat, is applied, thus preventing problems, including damage to a substrate due to heat and formation of MoSe2 due to heating of the Mo rear electrode. Furthermore, long-wavelength light, which deeply penetrates the thin film, is first radiated, and short-wavelength light, which shallowly penetrates the thin film, is subsequently radiated, thereby sequentially forming the chalcopyrite light-absorbing layer from the bottom of the thin film.
    Type: Grant
    Filed: April 1, 2014
    Date of Patent: September 6, 2016
    Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Young Joo Eo, Kyung Hoon Yoon, SeJin Ahn, Jihye Gwak, Jae Ho Yun, Ara Cho, Kee Shik Shin, SeoungKyu Ahn, Jun Sik Cho, Jin Su Yoo, Sang Hyun Park, Joo Hyung Park
  • Publication number: 20160189290
    Abstract: A distributed generation system and method of using a rental article having a flexible thin film solar cell are disclosed. The distributed generation system of a rental article using a flexible thin film solar cell can include: a rental article which generates electric energy from collected solar energy; and a station which is positioned in a space for renting and returning the rental article, and distributes and transmits electric energy provided from the rental article to a power demand target.
    Type: Application
    Filed: November 30, 2015
    Publication date: June 30, 2016
    Inventors: Seok Hyung Bae, Seo Jeong Han, Hyun Ik Choi, Jae Ho Yun, Seo Young Oh, Young Joo Eo, Kyung Hee Son, Chi Hye Bae, Min Hee Park, Jong Wook Kim, Yong Kwan Kim
  • Publication number: 20160099366
    Abstract: A solar cell module, a method for manufacturing the solar cell module, a solar power system, and an interconnection ribbon are provided. The solar cell module includes a plurality of solar cells which are connected in series or in parallel through interconnection ribbons, wherein the interconnection ribbons have a zigzag shape to reduce tension generated according to bending of the solar cell module.
    Type: Application
    Filed: October 6, 2015
    Publication date: April 7, 2016
    Inventors: Young Joo Eo, Jihye Gwak, Ara Cho, Se Jin Ahn, Seoung Kyu Ahn, Jun Sik Cho, Joo Hyung Park, Jin Su You, Jae Ho Yun, Ki Hwan Kim, Kyung Soo Kim, Kyung Hoon Yoon, Kee Shik Shin
  • Publication number: 20160049533
    Abstract: Disclosed is a method of forming a chalcopyrite light-absorbing layer for a solar cell, including: forming a thin film including a chalcopyrite compound precursor; and radiating light on the thin film, wherein the chalcopyrite compound precursor absorbs light energy and is thus crystallized. When forming the chalcopyrite light-absorbing layer, light, but not heat, is applied, thus preventing problems, including damage to a substrate due to heat and formation of MoSe2 due to heating of the Mo rear electrode. Furthermore, long-wavelength light, which deeply penetrates the thin film, is first radiated, and short-wavelength light, which shallowly penetrates the thin film, is subsequently radiated, thereby sequentially forming the chalcopyrite light-absorbing layer from the bottom of the thin film.
    Type: Application
    Filed: April 1, 2014
    Publication date: February 18, 2016
    Inventors: Young Joo EO, Kyung Hoon YOON, SeJin AHN, Jihye GWAK, Jae Ho YUN, Ara CHO, Kee Shik SHIN, SeoungKyu AHN, Jun Sik CHO, Jin Su YOO, Sang Hyun PARK, Joo Hyung PARK
  • Patent number: 9252316
    Abstract: Disclosed is an ultra-thin HIT solar cell, including: an n- or p-type crystalline silicon substrate; an amorphous silicon emitter layer having a doping type different from that of the silicon substrate; and an intrinsic amorphous silicon passivation layer formed between the crystalline silicon substrate and the amorphous silicon emitter layer, wherein the HIT solar cell further includes a transparent conductive oxide layer made of ZnO on an upper surface thereof, and the surface of the crystalline silicon substrate is not textured but only the surface of the transparent conductive oxide layer is textured, and thereby a very thin crystalline silicon substrate can be used, ultimately achieving an ultra-thin HIT solar cell having a very low total thickness while maintaining light trapping capacity.
    Type: Grant
    Filed: April 1, 2015
    Date of Patent: February 2, 2016
    Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Jun Sik Cho, Jin Su Yoo, Joo Hyung Park, Jae Ho Yun, Jihye Gwak, SeoungKyu Ahn, Young Joo Eo, SeJin Ahn, Ara Cho, Kihwan Kim, Kyung Hoon Yoon, Kee Shik Shin
  • Publication number: 20160005899
    Abstract: The invention relates a thin-film solar cell. In the related art, a buffer layer, a transparent electrode, and a grid electrode are formed on a light absorption layer, but in the invention, the buffer layer and the transparent electrode are not formed on a light absorption layer, and the buffer layer, the transparent electrode, and the grid electrode are formed under a CIGS face such that solar light is directly input to the light absorption layer without obstacles, and the first electrode and the buffer layer are patterned in a saw-toothed structure to engage with each other to reduce a distance by which electrons or holes generated by absorbing light energy move to the electrode or the buffer layer.
    Type: Application
    Filed: August 6, 2013
    Publication date: January 7, 2016
    Inventors: Young Joo EO, Ara CHO, Jun Sik CHO, Joo Hyung PARK, Kyung Hoon YOON, Se Jin AHN, Ji Hye GWAK, Jae Ho YUN, Kee Shik SHIN, Seoung Kyu AHN, Jin Su YOU, Sang Hyun PARK
  • Patent number: 9209326
    Abstract: A solar cell is provided that increases a rate of sunlight absorbed into a photoelectric conversion layer by forming a transparent conductive layer into a plurality of layers having different oxygen contents and different light absorption coefficients, and a manufacturing method thereof. The solar cell includes a substrate, a transparent conductive layer, and a photoelectric conversion layer. The transparent conductive layer includes a first layer having a first light absorption coefficient, and a second layer formed on the first layer and having a second light absorption coefficient higher than the first light absorption coefficient.
    Type: Grant
    Filed: February 4, 2009
    Date of Patent: December 8, 2015
    Assignee: LG ELECTRONICS INC.
    Inventors: Kwang Sun Ji, Young Joo Eo, Heon Min Lee
  • Patent number: 9159865
    Abstract: A method of forming a nanometer-scale prominence and depression structure on a zinc oxide thin film in a wet-etching method, and the method includes the steps of: preparing a substrate; forming a nano structure having a height and a width of a nanometer range; forming the zinc oxide thin film on the substrate on which the nano structure is formed; and wet-etching the zinc oxide thin film, in which in the wet-etching step, zinc oxide having relatively low physical compactness is preferentially etched since the zinc oxide is positioned on the nano structure, and thus the prominence and depression structure is formed around the nano structure by the etching. The method is effective in that a thin film can be uniformly formed on the prominence and depression structure, and an electrolyte or an organic material may uniformly penetrate between the prominence and depression structure.
    Type: Grant
    Filed: August 14, 2012
    Date of Patent: October 13, 2015
    Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Jun-Sik Cho, Kyung-Hoon Yoon, SeJin Ahn, Jihye Gwak, Jae-Ho Yun, Ara Cho, Kee-Shik Shin, SeoungKyu Ahn, Young-Joo Eo, Jin-Su Yoo, Sang-Hyun Park, Joo-Hyung Park
  • Publication number: 20150287854
    Abstract: A method of fabricating an Ag—(Cu—)In—Ga—Se (A(C)IGS) based thin film using Se—Ag2Se core-shell nanoparticles, an A(C)IGS based thin film fabricated by the method, and a tandem solar cell having the A(C)IGS thin film are disclosed. More particularly, a method of fabricating a densified Ag—(Cu—)In—Ga—Se (A(C)IGS) based thin film by non-vacuum coating a substrate with a slurry containing Se—Ag2Se core-shell nanoparticles, an A(C)IGS based thin film fabricated by the method, and a tandem solar cell including the A(C)IGS based thin film are disclosed. According to the present invention, an A(C)IGS based thin film including Ag is manufactured by applying Se—Ag2Se core-shell nanoparticles in a process of manufacturing a (C)IGS thin film, thereby providing an A(C)IGS based thin film having a wide band gap.
    Type: Application
    Filed: September 3, 2013
    Publication date: October 8, 2015
    Inventors: Ara Cho, Kyung Hoon Yoon, SeJin Ahn, Jae Ho Yun, Young Joo Eo, Jihye Gwak, Kee Shik Shin, SeoungKyu Ahn, Jun Sik Cho, Jin-Su Yoo, Joo Hyung Park
  • Publication number: 20150287868
    Abstract: Disclosed is an ultra-thin HIT solar cell, including: an n- or p-type crystalline silicon substrate; an amorphous silicon emitter layer having a doping type different from that of the silicon substrate; and an intrinsic amorphous silicon passivation layer formed between the crystalline silicon substrate and the amorphous silicon emitter layer, wherein the HIT solar cell further includes a transparent conductive oxide layer made of ZnO on an upper surface thereof, and the surface of the crystalline silicon substrate is not textured but only the surface of the transparent conductive oxide layer is textured, and thereby a very thin crystalline silicon substrate can be used, ultimately achieving an ultra-thin HIT solar cell having a very low total thickness while maintaining light trapping capacity.
    Type: Application
    Filed: April 1, 2015
    Publication date: October 8, 2015
    Inventors: Jun Sik CHO, Jin Su YOO, Joo Hyung PARK, Jae Ho YUN, Jihye GWAK, SeoungKyu AHN, Young Joo EO, SeJin AHN, Ara CHO, Kihwan KIM, Kyung Hoon YOON, Kee Shik SHIN
  • Publication number: 20150162480
    Abstract: Disclosed is a method of manufacturing a CI(G)S-based thin film, in which a slurry prepared by mixing two or more kinds of binary nanoparticles containing CI(G)S-based elements, a solution precursor containing a CI(G)S-based element, an alcoholic solvent and a chelating agent is used to reduce the carbon layer formed between the CI(G)S-based thin film and molybdenum, and which includes (a) mixing two or more kinds of binary nanoparticles containing CI(G)S-based elements, a solution precursor containing a CI(G)S-based element, an alcoholic solvent and a chelating agent, thus preparing a slurry; (b) subjecting the slurry to non-vacuum coating, thus forming a CI(G)S-based thin film; and (c) subjecting the CI(G)S-based thin film to selenization heat treatment.
    Type: Application
    Filed: August 9, 2013
    Publication date: June 11, 2015
    Inventors: Ara Cho, Kyung Hoon Yoon, SeJin Ahn, Jae Ho Yun, Jihye Gwak, Joo Hyung Park, Jin Su Yoo, Jun Sik Cho, Seoungkyu Ahn, Young Joo Eo, Kihwan Kim
  • Publication number: 20150114466
    Abstract: A CIGS solar cell having a flexible substrate based on improved supply of Na. The CIGS solar cell includes a substrate formed of a flexible material, a rear electrode formed on the substrate, a CIGS light-absorption layer formed on the rear electrode, a buffer layer formed on the CIGS light-absorption layer, and a front electrode formed on the buffer layer, wherein the rear electrode comprise a single-layered Na-added metal electrode layer. A single-layered Na-added Mo electrode layer, specific resistance of which is about 1/10th the specific resistance under conditions of a process of forming a typical multilayer rear electrode, is applied to the rear electrode, thereby providing a CIGS solar cell having a flexible substrate and high conversion efficiency.
    Type: Application
    Filed: August 5, 2013
    Publication date: April 30, 2015
    Inventors: SeoungKyu Ahn, Kyung Hoon Yoon, Jae Ho Yun, Jun Sik Cho, SeJin Ahn, Jihye Gwak, Kee Shik Shin, Kihwan Kim, Joo Hyung Park, Young Joo Eo, Jin-Su Yoo, Ara Cho
  • Patent number: 8896337
    Abstract: An apparatus and method for measurement of radiation intensity for testing reliability of a solar cell, and a method for testing the reliability of the solar cell. The apparatus includes a first solar cell receiving a predetermined intensity of radiation or more to generate electricity, a second solar cell receiving a predetermined intensity of radiation or more to generate electricity; a temperature sensor sensing a temperature of the second solar cell; a cooler cooling the first solar cell; and a controller measuring the intensity of radiation applied to the first solar cell, and controlling the cooler to prevent the temperature of the first solar cell from increasing above a predetermined temperature depending on the temperature of the second solar cell sensed by the temperature sensor.
    Type: Grant
    Filed: August 3, 2012
    Date of Patent: November 25, 2014
    Assignee: Korea Institute of Energy Research
    Inventors: Sang-Hyun Park, Jihye Gwak, Sejin Ahn, Kyung-Hoon Yoon, Kee-Shik Shin, SeoungKyu Ahn, Ara Cho, Jae-Ho Yun, Jun-Sik Cho, Jin-Su Yoo, Joo-Hyung Park, Young-Joo Eo
  • Publication number: 20140338736
    Abstract: A method for manufacturing a CZTS based thin film having a dual band gap slope, comprising the steps of: forming a Cu2ZnSnS4 thin film layer; forming a Cu2ZnSn(S,Se)4 thin film layer; and forming a Cu2ZnSnS4 thin film layer. A method for manufacturing a CZTS based solar cell having a dual band gap slope according to another aspect of the present invention comprises the steps of: forming a back contact; and forming a CZTS based thin film layer on the back contact by the method described above.
    Type: Application
    Filed: June 19, 2013
    Publication date: November 20, 2014
    Inventors: Jae Ho Yun, Jihye Gwak, SeJin Ahn, Kyung Hoon Yoon, Kee Shik Shin, SeoungKyu Ahn, Ara Cho, Sang Hyun Park, Jun Sik Cho, Jin Su You, Joo Hyung Park, Young Joo Eo
  • Publication number: 20140065760
    Abstract: A method of forming a nanometer-scale prominence and depression structure on a zinc oxide thin film in a wet-etching method, and the method includes the steps of: preparing a substrate; forming a nano structure having a height and a width of a nanometer range; forming the zinc oxide thin film on the substrate on which the nano structure is formed; and wet-etching the zinc oxide thin film, in which in the wet-etching step, zinc oxide having relatively low physical compactness is preferentially etched since the zinc oxide is positioned on the nano structure, and thus the prominence and depression structure is formed around the nano structure by the etching. The method is effective in that a thin film can be uniformly formed on the prominence and depression structure, and an electrolyte or an organic material may uniformly penetrate between the prominence and depression structure.
    Type: Application
    Filed: August 14, 2012
    Publication date: March 6, 2014
    Applicant: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Jun-Sik Cho, Kyung-Hoon Yoon, SeJin Ahn, Jihye Gwak, Jae-Ho Yun, Ara Cho, Kee-Shik Shin, SeoungKyu Ahn, Young-Joo Eo, Jin-Su Yoo, Sang-Hyun Park, Joo-Hyung Park
  • Publication number: 20130076382
    Abstract: An apparatus and method for measurement of radiation intensity for testing reliability of a solar cell, and a method for testing the reliability of the solar cell. The apparatus includes a first solar cell receiving a predetermined intensity of radiation or more to generate electricity, a second solar cell receiving a predetermined intensity of radiation or more to generate electricity; a temperature sensor sensing a temperature of the second solar cell; a cooler cooling the first solar cell; and a controller measuring the intensity of radiation applied to the first solar cell, and controlling the cooler to prevent the temperature of the first solar cell from increasing above a predetermined temperature depending on the temperature of the second solar cell sensed by the temperature sensor.
    Type: Application
    Filed: August 3, 2012
    Publication date: March 28, 2013
    Applicant: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Sang-Hyun Park, Jihye Gwak, Sejin Ahn, Kyung-Hoon Yoon, Kee-Shik Shin, SeoungKyu Ahn, Ara Cho, Jae-Ho Yun, Jun-Sik Cho, Jin-Su Yoo, Joo-Hyung Park, Young-Joo Eo
  • Patent number: 7863515
    Abstract: A thin-film solar cell having a first solar cell layer with a plurality of unit cells including a photoelectric conversion layer that are connected in series; a second solar cell layer with a plurality of unit cells including a photoelectric conversion layer that are connected in series, and that has band gap energy different from the first solar cell layer and a threshold voltage coincident with the first solar cell layer; and an electrode connector, that connects the first solar cell layer with the second solar cell layer in parallel.
    Type: Grant
    Filed: February 22, 2008
    Date of Patent: January 4, 2011
    Assignee: LG Electronics Inc.
    Inventors: Seh-Won Ahn, Young-Joo Eo, Kwy-Ro Lee, Don-Hee Lee, Heon-Min Lee
  • Publication number: 20100229912
    Abstract: The present invention relates to a photovoltaic device through a lateral crystallization process and a fabrication method thereof, and in particular to a high efficiency solar cell module and a fabrication method thereof. The present invention comprises a first solar cell having an amorphous silicon layer formed on a first substrate, a second solar cell having a microcrystalline silicon semiconductor layer formed on a second substrate, and a junction layer junctioning the first solar cell and the second solar cell, making it possible to obtain a solar cell with high efficiency, low fabricating costs, high product characteristic, and high reliability.
    Type: Application
    Filed: January 22, 2008
    Publication date: September 16, 2010
    Applicant: LG ELECTRONICS INC.
    Inventors: Young-Joo Eo, Seh-Woh Ahn, Kwy-Ro Lee, Don-Hee Lee, Heon-Min Lee
  • Publication number: 20100059100
    Abstract: Disclosed are a method for manufacturing a thin-film type solar cell and a thin-film type solar cell obtained thereby that uses a direct printing method and reduces the frequency of a cutting process.
    Type: Application
    Filed: September 1, 2009
    Publication date: March 11, 2010
    Applicant: LG Electronics Inc.
    Inventors: Sun Ho Kim, Jung Hoon Choi, Heon Min Lee, Seung-Yoon Lee, Young Joo Eo, Kang Seok Moon, Seh-Won Ahn