Abstract: A photovoltaic device module and a fabrication method thereof are disclosed. There are provided a solar cell module structure effective to prevent the performance of the overall module from being degraded when photoelectric conversion efficiency of a specific portion cell is degraded in a solar cell module in which solar cells are integrated, and a fabrication method thereof. More particularly, there are provided a module structure having two terminal wirings, in which one of them is formed by selecting and connecting at least two unit cells from a plurality of unit cells electrically connected and the other is formed by selecting and connecting at least two unit cells differentiated from the said selected unit cells., and a fabrication method thereof.

Abstract: The present invention relates to a thin-film solar cell and a fabrication method thereof, the solar cell having a structure that a glass substrate, a transparent conductive oxide, a multi-junction solar cell layer and an electrode layer are stacked, wherein a first solar cell layer and a second solar cell layer, which are in a multi-junction, are electrically connected with each other in parallel, and one or more unit cells connected in parallel are grouped to be electrically connected with each other in series. According to the present invention, a thin-film solar cell having a unit cell in a structure that two solar cell layers having different characteristics are connected with each other in parallel, and having a structure that several unit cells are connected with each other in series, can achieve higher output and efficiency than a thin-film solar cell having a structure that several solar cell layers are connected in series.

Abstract: The present invention relates to a photovoltaic conversion apparatus including a by-pass diode and a manufacturing method thereof. The photovoltaic conversion apparatus of the present invention comprises at least one unit solar cell module configured of at least one unit solar cell; and a by-pass solar cell module including at least one solar cell electrically connected to the unit solar cell to by-pass current. According to the present invention, a photovoltaic conversion apparatus having high photoelectric conversion efficiency can be manufactured. Also, the photovoltaic conversion apparatus will contribute to earths environmental conservation as the next clean energy source and can be directly applied to private facilities, public facilities, military facilities, etc., to create enormous economic value.

Abstract: The present invention provides a solar cell that increases a rate of sunlight absorbed into a photoelectric conversion layer by forming a transparent conductive layer into a plurality of layers having different oxygen contents and different light absorbing coefficients and a manufacturing method thereof. The solar cell of the present invention includes a substrate, a transparent conductive layer, and a photoelectric conversion layer, wherein the transparent conductive layer comprises a first layer having a first light absorbing coefficient; and a second layer that is formed on the first layer and has a second light absorbing coefficient higher than the first light absorbing coefficient.

Abstract: The present invention discloses a thin-film type solar cell including another upper transparent conductive layer between a silicon semiconductor layer and an upper transparent conductive layer, and a manufacturing method thereof. At this time, the silicon based semiconductor layer used may be formed of at least one amorphous silicon based (p/i/n) thin film or may be formed as a tandem type silicon based semiconductor layer formed of the amorphous silicon based (p/i/n) thin film, an intermediate transparent conductive layer, and a microcrystalline silicon based thin film.

Abstract: Disclosed are a hetero-junction silicon solar cell and a fabrication method thereof. The hetero-junction silicon solar cell according to the present invention forms a pn junction of a crystalline silicon substrate and a passivation layer doped with impurities so as to minimize a recombination of electrons and holes, making it possible to maximize efficiency of the hetero-junction silicon solar cell. The present invention provides a hetero-junction silicon solar cell comprising a crystalline silicon substrate and a passivation layer that is formed on the crystalline silicon substrate and is doped with impurities.

Abstract: Provided is a dielectric/barrier rib composition for a plasma display panel, comprising a compound 1 of the formula or at least one compound belonging to a polyhedral oligosilsesquioxane (compound 2) having R6SiO1.5 as a repeating unit, or comprising inorganic/organic hybrid materials having compounds 1 and 2 as a monomer, wherein X is an integer inclusive 0, R1, R2, R3, R4, R5 and R6 are independently a linear, branched or cyclic C1-C12 hydrocarbon group containing one or more alkyl, alkoxy, ketone, acryl, methacryl, allyl, aromatic, halogen, amino, mercapto, ether, ester, sulfone, nitro, hydroxyl, cyclobutene, carbonyl, carboxyl, alkyd, urethane, vinyl, nitrile, hydrogen, or epoxy functional group, and A is oxygen or NH. The inorganic/organic hybrid materials can be a material composed of an extended matrix, containing silicon and oxygen or nitrogen atoms, and having at least one silicon fraction directly bonded to a substituted or unsubstituted hydrocarbon atom.

Abstract: A thin-film solar cell of the present invention comprises a first solar cell layer that a plurality of unit cells including a photoelectric conversion layer are connected in series; a second solar cell layer that a plurality of unit cells including a photoelectric conversion layer are connected in series, which has band gap energy being different from the first solar cell layer and a threshold voltage being coincident with the first solar cell layer; and an electrode connector, which connects the first solar cell layer with the second solar cell layer in parallel. The thin-film solar cell of the present invention provides a solar cell structure and a method of manufacturing the same, which is capable of increasing the efficiency by increasing the maximum output of the thin film solar cell formed of both the solar cell layers having the different characteristics.

Abstract: The present invention provides an inorganic/organic hybrid oligomer having silica or a complex of silica and a metal oxide present inside thereof and functional organic groups outside thereof, obtained by reacting: (i) Compound 1 and Compound 2; (ii) Compound 1 and Compound 3; or (iii) Compound 2 and Compound 3 with Compound 1; wherein Compound 1 is R1R2Si(OH)2, Compound 2 is (R3)a(R4)bM(OR5)(c-a-b), and Compound 3 is R6OH or R6COOH; a and b are each an integer between 0 and 3; c is an integer between 3 and 6; M is silicon, or a metal such as aluminum, titanium, zirconium, etc. that can be coordinated with ligands; provided that in the cases of (i), (ii) and (iii) at least one of R1, R2, R3, R4 and R6 has a polymerizable functional group; an inorganic/organic nano hybrid polymer prepared therefrom and a process for preparing the same.

Abstract: Provided is a dielectric/barrier rib composition for a plasma display panel, comprising a compound 1 of the formula or at least one compound belonging to a polyhedral oligosilsesquioxane (compound 2) having R6SiO1.5 as a repeating unit, or comprising inorganic/organic hybrid materials having compounds 1 and 2 as a monomer, wherein X is an integer inclusive 0, R1, R2, R3, R4, R5 and R6 are independently a linear, branched or cyclic C1-C12 hydrocarbon group containing one or more alkyl, alkoxy, ketone, acryl, methacryl, allyl, aromatic, halogen, amino, mercapto, ether, ester, sulfone, nitro, hydroxyl, cyclobutene, carbonyl, carboxyl, alkyd, urethane, vinyl, nitrile, hydrogen, or epoxy functional group, and A is oxygen or NH. The inorganic/organic hybrid materials can be a material composed of an extended matrix, containing silicon and oxygen or nitrogen atoms, and having at least one silicon fraction directly bonded to a substituted or unsubstituted hydrocarbon atom.

Abstract: Disclosed herein are a silane coupling agent and a method of preparing the same useful for a composite organic-inorganic material. The silane coupling agent is represented by the formula of R1R2R3Si—X, wherein R1, R2, and R3, respectively, represent straight or branched alkyl having 4 to 22 carbon atoms, alkoxy, phenyl, phenyl alkoxy, benzyloxy or phenyl alkyl group. The method comprises the steps of: dissolving a vinyl derivative in a solvent under a nitrogen or argon atmosphere; and reacting the resulting solution with an alkoxysilane derivative at a temperature of 20 to 200° C. for 1 to 72 hours in the presence of a metal catalyst. Alternatively, the method comprises the steps of: dissolving alkylmagnesium halide in a solvent under a nitrogen or argon; and reacting the resulting solution with haloalkoxysilane at a temperature of −78° C. to 50° C. for 0.1 to 5 hours.

Abstract: Disclosed are inorganic-organic copolymers and their preparation using polyvinylalcohol-silane coupling agents. The inorganic-organic copolymers can be prepared through the reaction of silane-coupling agents containing hydroxy groups and silane groups with organic metal compounds. The inorganic-organic copolymers are of high transparency as well as shows superb moisture barrier characteristics and hydrophilicity and can be applied as resins or film coatings for many fields, including anti-fogging agents, anti-foaming agents, lubricants, paints, anti-corrosive coatings, water-resistant coatings, plastic or metal-protective coatings.