Abstract: An array substrate for an LCD device includes a first TFT including a first semiconductor layer, a first gate electrode, wherein the first gate electrode is directly over the first semiconductor layer; a first protrusion extending from the first gate electrode along an edge of the first semiconductor layer; a second TFT including a second semiconductor layer, a second gate electrode, wherein the second gate electrode is directly over the second semiconductor layer; a second protrusion extending from the second gate electrode along an edge of the second semiconductor layer; a third TFT connected to crossed data and gate lines including a third semiconductor layer, a third gate electrode, wherein the third gate electrode is directly over the third semiconductor layer; a third protrusion extending from the third gate electrode along an edge of the third semiconductor layer; and a pixel electrode.

Abstract: A method of fabricating an array substrate for a liquid crystal display device includes forming an alignment key on a substrate having a display region and a non-display region surrounding the display region; forming an amorphous silicon layer on the alignment key; crystallizing a predetermined portion of the amorphous silicon layer using the alignment key as a reference; patterning the amorphous silicon layer using the alignment key as a reference to form a polycrystalline silicon layer, the polycrystalline silicon layer being formed from the predetermined portion of the amorphous silicon layer; forming a gate insulating layer on the semiconductor layer; forming a gate electrode on the gate insulating layer using the alignment key as a reference; forming an interlayer insulating layer on the gate electrode; and forming source and drain electrodes on the interlayer insulating layer.

Abstract: A method of fabricating polycrystalline silicon according to an embodiment includes forming a semiconductor layer of amorphous silicon on a substrate having a first region and a second region surrounding the first region; forming a plurality of flat align keys in the second region using a first mask; forming a plurality of convex align keys by etching the semiconductor layer in the first region, the plurality of convex align keys having steps against the substrate; and crystallizing the semiconductor layer in the first region by aligning a second mask with respect to the plurality of convex align keys.

Abstract: A virtual education system for a mounter and a method for controlling the same are provided to teach users how to manipulate the mounter through virtual models (animation or simulation models) of the mounter so that they learn how to manipulate it through the same operation procedures and methods as the real ones of the mounter. A user manual containing structures and functions of elements of the mounter and operation procedures and methods thereof is provided. Virtual models representing contents of the user manual are produced to display corresponding configurations of the mounter. Specifically, virtual models representing items included in the user manual, which are associated with installation and startup of the mounter, respective structures and operations of the elements, manufacturing processes of the mounter for producing a product, and tasks in each manufacturing process, are produced to display corresponding configurations of the mounter on a screen.

Abstract: A liquid crystal display and a method for fabricating the same are disclosed. The method for fabricating a liquid crystal display includes preparing an insulating substrate defining a pixel portion divided into a thin film transistor region and a storage region, sequentially forming a polycrystalline silicon film and a storage electrode film on an entire surface of the substrate, selectively patterning the storage electrode film and the polycrystalline silicon film to form a pixel pattern that covers the pixel portion, and selectively removing the storage electrode film in the thin film transistor region to simultaneously form a first active layer in the thin film transistor region and form a storage electrode in the storage region, wherein the active layer is formed of the polycrystalline silicon film and the storage electrode is formed of the storage electrode film.

Abstract: A method for fabricating a liquid crystal display (LCD) device includes providing a first substrate including a pixel portion and a circuit portion, the circuit portion having first and second regions; forming an active pattern and a first gate insulation film at the pixel portion and the circuit portion and forming a storage electrode on a portion of the active pattern of the pixel portion; forming a second gate insulation film on the first substrate; forming a gate electrode at the first region and forming p+ source and drain regions at portions of the active pattern of the first region; forming a gate electrode at the pixel portion and the second region, and forming a common line at the pixel portion; forming n+ source and drain regions at the pixel portion and at a portion of the active pattern of the second region; and joining the first and second substrates.

Abstract: An LCD device and a method of fabricating the same are provided. The LCD device comprises a first substrate divided into a pixel unit and a circuit unit. Active patterns are disposed in the pixel unit and the circuit unit of the first substrate. A first insulating film is disposed on the first substrate. Gate electrodes are disposed in the pixel unit and the circuit unit of the first substrate, and common lines are disposed in the pixel unit of the first substrate. First contact holes and second contact holes are disposed in regions of the first insulating film, the first interlayer insulating film and the second interlayer insulating film. Source electrodes and drain electrodes electrically connect to the source regions and the drain regions of the active patterns through the first contact holes and the second contact holes.

Abstract: A liquid crystal display and a method for fabricating the same are disclosed.

Abstract: A method for fabricating is provided for a liquid crystal display device with first and second substrates having a liquid crystal layer in-between. Here, active patterns are formed respectively on a pixel region, a first circuit region, and a second circuit region of the first substrate, and a storage electrode is formed on the active pattern of the pixel region using a single mask. A first insulation layer, a first conductive layer and a second conductive layer are formed on the first substrate having the active patterns and the storage electrode. The first and second conductive layers in the first circuit region are patterned to form a first gate electrode from the second conductive layer, and p+ ions are injected into the active region of the first circuit region to form p+ source/drain regions.

Abstract: A method of crystallizing amorphous silicon includes forming an amorphous silicon film over a substrate, crystallizing the amorphous silicon film to form a polycrystalline silicon film using a sequential lateral solidification crystallization method, and performing a surface treatment to the polycrystalline silicon film, wherein the sequential lateral solidification crystallization method includes at least a first application of a first laser beam having a first energy density that completely melts a first uncrystallized portion of the amorphous silicon film and melts a first crystallized portion of the amorphous silicon film, and the surface treatment includes application of a second laser beam having a second energy density that partially melts an entire surface of the polycrystalline silicon film.

Abstract: A crystallization method is provided which improves a crystallization process by deciding a best-fit focal plane for a laser beam using a test mask and then applying the decided best-fit focal plane to the crystallization process. The crystallization method includes loading a test mask on a mask stage; deciding a best-fit focal plane by performing a crystallization test using the test mask, checking the test result and deciding conditions of a best-fit focal plane from the test result; moving the mask stage to a position corresponding to the best-fit focal plane; loading a mask for crystallization process onto the moved mask stage; and performing the crystallization process using the mask for crystallization process.

Abstract: A high voltage switching circuit of a NAND type flash memory device that includes a clock level shifter for increasing an amplitude of a clock signal, a pass voltage generator for outputting a pass voltage by pumping a power source voltage in response to a clock signal with an increased amplitude, and a high voltage pass transistor for transferring a high voltage according to the pass voltage.

Abstract: Disclosed herein is a flyback converter with a synchronous rectifier which is applied to a power supply of a portable computer such as a notebook PC. The flyback converter is operated in a critical conduction mode to turn on/off a main switch at a zero crossing point of an output voltage. The flyback converter is also adapted to supply a driving voltage to a synchronous switch using the output voltage. Therefore, there is no need for a secondary auxiliary coil of a transformer and for a Schottky diode to be connected in parallel with the synchronous switch, resulting in simplification in circuit design.

Abstract: A method of forming a crystalline silicon layer that includes forming a semiconductor layer of amorphous silicon on a substrate having a first region and a second region at a periphery of the first region; forming at least one concave-shaped alignment key by irradiating a laser beam onto the semiconductor layer in the second region; and crystallizing the semiconductor layer in the first region using the at least one alignment key.

Abstract: A liquid crystal display (LCD) device and a method fabricating the same are provided. The LCD device and the method of fabricating the same have the shielding means formed directly on the array substrate instead of the color filter substrate of the opposite substrate to the array substrate.

Abstract: A method of fabricating polycrystalline silicon includes: forming a semiconductor layer of amorphous silicon on a substrate having a first region and a second region surrounding the first region; forming a plurality of flat align keys in the second region using a first mask; forming a plurality of convex align keys by etching the semiconductor layer in the first region, the plurality of convex align keys having steps against the substrate; and crystallizing the semiconductor layer in the first region by aligning a second mask with respect to the plurality of convex align keys.

Abstract: A sequential lateral solidification (SLS) device and a method of crystallizing silicon using the same is disclosed, wherein alignment keys are formed on a substrate with one mask having a plurality of different patterns, and a crystallization process is progressed in parallel to an imaginary line connecting the alignment keys with information for a distance between the mask and the alignment key. The SLS device includes a laser beam generator for irradiating laser beams; a mask having a plurality of areas; a mask stage for moving the mask loaded thereto, to transmit a laser beam through a selective area of the mask; and a substrate stage for moving a substrate loaded thereto, to change portions of the substrate irradiated with the laser beam passing through the mask.

Abstract: A method of fabricating polycrystalline silicon according to an embodiment includes forming a semiconductor layer of amorphous silicon on a substrate having a first region and a second region surrounding the first region; forming a plurality of flat align keys in the second region using a first mask; forming a plurality of convex align keys by etching the semiconductor layer in the first region, the plurality of convex align keys having steps against the substrate; and crystallizing the semiconductor layer in the first region by aligning a second mask with respect to the plurality of convex align keys.

Abstract: The present invention discloses a high voltage switch circuit of a semiconductor device which can reduce a discharge time by supplying a higher voltage than a power voltage to a gate terminal of a discharge transistor in a discharge unit for discharging a high voltage.

Abstract: A method of crystallizing amorphous silicon is used for manufacturing an array substrate having thin film transistors, pixel electrodes and an alignment key. The method includes forming an amorphous silicon layer over a substrate, forming an alignment key in the amorphous silicon layer, preparing a mask including pattern portions and an alignment key pattern, disposing the mask over the substrate having the amorphous silicon layer, wherein the alignment key pattern is aligned with the alignment key, and applying a first shot of a laser beam to in the amorphous silicon layer to form first polycrystalline silicon areas corresponding to the pattern portions of the mask.