Abstract: A plurality of nonvolatile memories are adapted to generate ready/busy signals and internal inverted chip enable signals. A controller outputs to the memories an external inverted chip enable signal, an inverted write enable signal, an inverted read enable signal, an address, and data, and inputs the ready/busy signals outputted from the nonvolatile memories. Each of the nonvolatile memories includes a circuit that generates a first read “don't care” signal during a disable interval of an inverted write enable signal and a disable interval of an inverted read enable signal when a read command is applied during a read operation, and a second circuit that generates a second read “don't care” signal that is enabled by detecting an address input end, and disabled by detecting a ready state of a ready/busy signal when the read command is applied during the read operation.

Abstract: A flame retardant resin composition having improved heat distortion temperature and mechanical properties comprising 5-20 parts by weight of phosphate-based flame retardant and 0.01-10 parts by weight of tetrafluoroethylene powder per 100 parts by weight of PC/ABS which comprises 5-95% by weight of polycarbonate and 5-95% by weight of acrylonitrile-butadiene-styrene copolymer, characterized in that said phosphate-based flame retardant is oligomeric phosphate ester of the following formula I: ##STR1## wherein R.sub.1, R.sub.2, R.sub.3 and R.sub.4 each represent cresyl group; n=1 to 3; and X is derived from dihydric bisphenol A and represented by the following formula II. ##STR2## The resin composition according to the invention may be applied to the indoor applications such as the housing of domestic electric appliances, the interior decoration of automobiles, or the like.

Abstract: A system for a video cassette recorder is capable of recording/reproducing analog video and audio signals as well as digital video and audio signals for a HDTV.The revolution of a head drum may be determined different from each other depending on the selected mode, i.e., digital or analog signal recording/reproducing mode, and thus the digital signal having a different recording bandwidth from the analog signal can be recorded on and reproduced from a conventional analog tape.

Abstract: Methods of programming multi-state memory devices include the steps of programming a nonvolatile multi-state memory cell (e.g., EEPROM) from a reference state (e.g., erased state) towards a first program state, by applying a first program voltage (V.sub.pgm) thereto. The first program voltage is preferably applied for a first predetermined time interval so that sufficient Fowler-Nordheim tunneling of electrons can occur into the cell's floating gate to cause a shift in the cell's threshold voltage from the reference state (e.g., Vth=-2 V) to a first program state (e.g., -1 V.ltoreq.Vth.ltoreq.-0.5). To verify the step of programming the memory cell into the first program state, a operation is performed by a sense amplifier to sense a first state of the memory cell, upon application of a first reference voltage thereto.

Abstract: Disclosed is a memory device which includes a memory cell array having a plurality of bit lines arranged in parallel, a plurality of word lines electrically insulated and crossed with the bit lines, and a plurality of memory cells connected with corresponding bit lines. Each of the memory cells has at least one floating gate memory transistor. A reference voltage generator generates a reference voltage that is applied to a sense line which corresponds to a selected word line that is selected when data is read out. Further, the present invention advantageously provides a discharging transistor that discharges the reference voltage on the sense line selected when the reading operation is complete in order to prevent application of a voltage to the floating gate of the memory cell for a period of time which is longer than necessary. As a result, undesired changes in the threshold voltage are minimized.

Abstract: A circuit for applying a stress voltage for use in a semiconductor memory device includes a first control circuit for selecting a first block to which a program voltage is applied and then sequentially selecting following blocks; and a second control circuit for selecting a word line to which a stress voltage is to be applied, whereby, in a stress mode for detecting a defective call, the stress voltage is applied to a word line connected to a memory transistor within a first selected memory block and thereafter to word lines in each of the sequentially selected memory blocks.

Abstract: A composition having 1.0-50.0 wt % of a compound having both a structure of organosilane, organosilazane, or organosiloxazane and a structure of a dye compound which has light-absorbing capabilities in a particular wavelength band, 50.0-99.0 wt % of solvent, and optionally 0"10 wt % of a water-soluble polymer, improves adhesion to a photoresist film and anti-reflection characteristics in exposure.