Abstract: The present application relates to creamer comprising vegetable lipids, casein, maltose, phosphates, and allulose.

Abstract: Provided are display panel manufacturing method and apparatus. The display panel manufacturing method includes detecting a machining target area of a bottom layer, removing an area, overlapping the machining target area, of a top layer, emitting a laser beam to the machining target area of the bottom layer to provide a bottom pattern from the machining target area, and providing a compensation pattern in the removed area of the top layer.

Abstract: A self-healing alloy contains 5 to 11% by weight of molybdenum (Mo), iron (Fe) as a remainder, and unavoidable impurities. A method for manufacturing the self-healing alloy includes heat treating the alloy or preparing an alloy raw material powder and sintering, homogenizing, and cooling the alloy raw material powder.

Abstract: A fluid-sealed engine mount controls the movement of an engine mounted to a vehicle body and insulates from vibration. In particular, the fluid-sealed engine mount improves vibration damping performance and dynamic characteristics compared to a conventional engine mount, thereby enhancing noise, vibration, and harshness (NVH) performance.

Abstract: A method for manufacturing an image sensing device includes forming a first photoelectric conversion region in a semiconductor substrate, forming a recess region to extend in a direction from a surface of the semiconductor substrate toward an inside of the semiconductor substrate, arranging a mask in a portion of the recess region, forming a second photoelectric conversion region through the recess region, and forming a recess gate in the recess region. A thickness of the second photoelectric conversion region is based on a depth of the recess gate that is measured from the surface of the semiconductor substrate to a bottom surface of the recess gate.

Abstract: The present invention relates to a carcass treatment system 1. Such a carcass treatment system 1 ferments and decomposes carcasses by hyperthermophile of 85 to 110° C. and aerobic conditions, and comprises a mobile fermentation process unit 3 for transferring to an onset site of disease and treating the livestock carcass by hyperthermophile; or a burial fermentation process unit 5 for excavating a burial site 6 near the outbreak site of disease and treating the livestock carcass by hyperthermophile; a base treatment unit 7 for secondarily processing the livestock carcass treated primarily by the mobile fermentation process unit 3 or the burial fermentation process unit 5 with hyperthermophile, wherein the primary treatment is performed by treating with hyperthermophile at fermentation temperature of 85 to 110° C. for 8-15 days to decompose flesh of the carcass, and the secondary treatment is performed by treating with hyperthermophile for 2-4 weeks.

Abstract: A self-healing alloy contains 5 to 11% by weight of molybdenum (Mo), iron (Fe) as a remainder, and unavoidable impurities. A method for manufacturing the self-healing alloy includes heat treating the alloy or preparing an alloy raw material powder and sintering, homogenizing, and cooling the alloy raw material powder.

Abstract: A fluid-sealed engine mount controls the movement of an engine mounted to a vehicle body and insulates from vibration. In particular, the fluid-sealed engine mount improves vibration damping performance and dynamic characteristics compared to a conventional engine mount, thereby enhancing noise, vibration, and harshness (NVH) performance.

Abstract: A display device may include the following elements: a first substrate; a first polarizer; a second substrate overlapping the first substrate and overlapping the first polarizer; and a polarization structure positioned inside the second substrate, comprising a first polarization layer, and comprising a second polarization layer. The first polarization layer may be narrower than the second substrate in a first direction and may be positioned farther from or closer to the first polarizer than the second polarization layer. The second polarization layer may be narrower than the second substrate in the first direction.

Abstract: A display device may include the following elements: a first substrate; a first polarizer; a second substrate overlapping the first substrate and overlapping the first polarizer; and a polarization structure positioned inside the second substrate, comprising a first polarization layer, and comprising a second polarization layer. The first polarization layer may be narrower than the second substrate in a first direction and may be positioned farther from or closer to the first polarizer than the second polarization layer. The second polarization layer may be narrower than the second substrate in the first direction.

Abstract: Disclosed is an image-replaceable functional advertisement apparatus that includes a base having a plate shape, a shade formed of a flexible material and coupled to a top of the base along a periphery of the base, the shade including an image mounting surface to which an image is attached, a lighting column mounted in an upright position on a side of an upper surface of the base surrounded by the shade, and a cover that covers an open top of the shade.

Abstract: An image sensor, comprising: a photoelectric conversion element; a transfer transistor formed over the photoelectric conversion element; and a reset transistor formed over the photoelectric conversion element, formed substantially at the same level as the transfer transistor, and spaced apart from the transfer transistor by a gap, wherein the transfer transistor and the reset transistor are trench-type transistors and are symmetrical structure to each other with respect to the gap, wherein the photoelectric conversion element is a continuous layer under both the transfer transistor and the reset transistor, and is completely below the transfer transistor and the reset transistor.

Abstract: An image sensor may include a photoelectric conversion element, a transfer transistor formed over the photoelectric conversion element, and a reset transistor formed over the photoelectric conversion element, formed substantially at the same level as the transfer transistor, and spaced apart from the transfer transistor by a gap, wherein the transfer transistor and the reset transistor are configured symmetrical to each other with respect to the gap.

Abstract: An image sensor may include a photoelectric conversion element, a transfer transistor formed over the photoelectric conversion element, and a reset transistor formed over the photoelectric conversion element, formed substantially at the same level as the transfer transistor, and spaced apart from the transfer transistor by a gap, wherein the transfer transistor and the reset transistor are configured symmetrical to each other with respect to the gap.

Abstract: Disclosed is an image-replaceable functional advertisement apparatus that includes a base having a plate shape, a shade formed of a flexible material and coupled to a top of the base along a periphery of the base, the shade including an image mounting surface to which an image is attached, a lighting column mounted in an upright position on a side of an upper surface of the base surrounded by the shade, and a cover that covers an open top of the shade.

Abstract: An image sensor may include a lower device that includes logic transistors, an intermediate device that is formed over the lower device and includes a Correlated Double Sampling (CDS) circuit and a capacitor, and an upper device that is formed over the intermediate device and includes a photodiode, a floating diffusion region, and a transfer gate electrode.

Abstract: This technology relates to an image sensor. The image sensor may include a substrate including a photoelectric conversion element; a pillar formed over the photoelectric conversion element and having a concave-convex sidewall; a channel film formed along a surface of the pillar and for having at least one end coupled to the photoelectric conversion element; and a transfer gate formed over the channel film.

Abstract: An image sensor may include: a photoelectric conversion element including a second conductive layer formed over a first conductive layer; an insulating layer and a third conductive layer which are sequentially formed over the second conductive layer; an opening exposing the second conductive layer through the third conductive layer and the insulating layer; a channel layer formed along the surface of the opening, and including first and second channel layers which are coupled to each other while having different conductivity types; and a transfer gate formed over the channel layer to fill the opening, and partially formed over the third conductive layer.

Abstract: An image sensor may include: a photoelectric conversion element suitable for generating a photo charge in response to incident light; and a transfer transistor suitable for transferring the photo charge generated by the photoelectric conversion element to a floating diffusion in response to a transfer signal, the transfer transistor comprising a first transfer gate formed over the photoelectric conversion element; an opening formed in the first transfer gate and exposing the photoelectric conversion element; a second transfer gate formed in the opening; and a channel layer interposed between the first and second transfer gates and between the photoelectric conversion element and the second transfer gate.

Abstract: An image sensor includes a photoelectric conversion element including a first impurity region and a second impurity region, wherein the first impurity region contacts a first surface of a substrate, wherein the second impurity region has conductivity complementary to the first impurity region and is formed in the substrate and below the first impurity region; a pillar formed over the photoelectric conversion element; a transfer gate formed over the photoelectric conversion element to surround the pillar; and a channel layer formed between the transfer gate and the pillar and contacting the photoelectric conversion element, wherein the channel layer contacts the first impurity region and has the same conductivity as the second impurity region.