Abstract: Provided is a circuit for controlling a data bus connecting a bitline sense amplifier to a data sense amplifier in accordance with a variation of an operating frequency of a memory device, being comprised of a pulse width adjusting circuit for varying a pulse width of an input signal in accordance with the operating frequency of the memory device after receiving the input signal, a signal transmission circuit for buffing a signal outputted from the pulse width adjusting circuit, and an output circuit for outputting a first signal to control the data bus in response to a signal outputted from the signal transmission circuit.

Abstract: Provided is a circuit for controlling a data bus connecting a bitline sense amplifier to a data sense amplifier in accordance with a variation of an operating frequency of a memory device, being comprised of a pulse width adjusting circuit for varying a pulse width of an input signal in accordance with the operating frequency of the memory device after receiving the input signal, a signal transmission circuit for buffing a signal outputted from the pulse width adjusting circuit, and an output circuit for outputting a first signal to control the data bus in response to a signal outputted from the signal transmission circuit.

Abstract: A calibration circuit for a semiconductor device and a method of driving the same. The calibration circuit includes a PRBS generator in which a data pattern is generated within an integrated circuit without receiving data from the outside, a PRBS tester that compares output signals of a data latch that strobes and latches an output signal of a data input buffer to determine whether the interlock operation of data and strobe is pass or fail, and a calibration unit that calibrates a delay time using the output signal of the PRBS tester as much as a predetermined unit. Thus, variation in process, voltage, temperature, etc. can be freely calibrated even after package assembly. Accordingly, it is possible to guarantee a set-up/hold value that is necessary for high frequency operation of a system, and to reduce the time and resources necessary for product manufacture and for calibrating these values.

Abstract: Disclosed is an apparatus for controlling an enable interval of a signal controlling an operation of data buses which connect a bit line sense amplifier with a data sense amplifier according to a variation of an operational frequency of a memory device. The apparatus comprises a pulse width control section for changing the pulse width of an input signal depending on the operational frequency of the memory device after receiving the input signal, a signal transmission section for buffering a signal outputted from the pulse width control section, and an output section for receiving a signal outputted from the signal transmission section so as to output a first signal for controlling the signal to control the operation of the data buses.

Abstract: Disclosed is a method for monitoring an internal control signal of a memory device and an apparatus therefore. The method includes (a) generating a first signal having a first pulse width by a burst operation command, (b) receiving the first signal, and generating N?1 (where, N is a burst length) second signals having a second pulse width, (c) receiving the first signal and the second signals, and outputting a third signal by changing the first pulse width of the first signal and the second pulse width of the second signals in accordance with a variation of a frequency of a clock signal of the memory device, (d) outputting the third signal to an external pin of the memory device and monitoring the third signal, and (e) adjusting a pulse width of a signal that controls an operation of a data bus connecting a bit-line sense amplifier and a data sense amplifier using the third signal.

Abstract: Disclosed is a method for monitoring an internal control signal of a memory device and an apparatus therefore. The method includes (a) generating a first signal having a first pulse width by a burst operation command, (b) receiving the first signal, and generating N?1 (where, N is a burst length) second signals having a second pulse width, (c) receiving the first signal and the second signals, and outputting a third signal by changing the first pulse width of the first signal and the second pulse width of the second signals in accordance with a variation of a frequency of a clock signal of the memory device, (d) outputting the third signal to an external pin of the memory device and monitoring the third signal, and (e) adjusting a pulse width of a signal that controls an operation of a data bus connecting a bit-line sense amplifier and a data sense amplifier using the third signal.

Abstract: Disclosed is a method for monitoring an internal control signal of a memory device and an apparatus therefore. The method includes (a) generating a first signal having a first pulse width by a burst operation command, (b) receiving the first signal, and generating N?1 (where, N is a burst length) second signals having a second pulse width, (c) receiving the first signal and the second signals, and outputting a third signal by changing the first pulse width of the first signal and the second pulse width of the second signals in accordance with a variation of a frequency of a clock signal of the memory device, (d) outputting the third signal to an external pin of the memory device and monitoring the third signal, and (e) adjusting a pulse width of a signal that controls an operation of a data bus connecting a bit-line sense amplifier and a data sense amplifier using the third signal.

Abstract: A calibration circuit for a semiconductor device and a method of driving the same. The calibration circuit includes a PRBS generator in which a data pattern is generated within an integrated circuit without receiving data from the outside, a PRBS tester that compares output signals of a data latch that strobes and latches an output signal of a data input buffer to determine whether the interlock operation of data and strobe is pass or fail, and a calibration unit that calibrates a delay time using the output signal of the PRBS tester as much as a predetermined unit. Thus, variation in process, voltage, temperature, etc. can be freely calibrated even after package assembly. Accordingly, it is possible to guarantee a set-up/hold value that is necessary for high frequency operation of a system, and to reduce the time and resources necessary for product manufacture and for calibrating these values.

Abstract: A calibration circuit for a semiconductor device and a method of driving the same. The calibration circuit includes a PRBS generator in which a data pattern is generated within an integrated circuit without receiving data from the outside, a PRBS tester that compares output signals of a data latch that strobes and latches an output signal of a data input buffer to determine whether the interlock operation of data and strobe is pass or fail, and a calibration unit that calibrates a delay time using the output signal of the PRBS tester as much as a predetermined unit. Thus, variation in process, voltage, temperature, etc. can be freely calibrated even after package assembly. Accordingly, it is possible to guarantee a set-up/hold value that is necessary for high frequency operation of a system, and to reduce the time and resources necessary for product manufacture and for calibrating these values.

Abstract: Disclosed is an apparatus for controlling an enable interval of a signal controlling an operation of data buses which connect a bit line sense amplifier with a data sense amplifier according to a variation of an operational frequency of a memory device. The apparatus comprises a pulse width control section for changing the pulse width of an input signal depending on the operational frequency of the memory device after receiving the input signal, a signal transmission section for buffering a signal outputted from the pulse width control section, and an output section for receiving a signal outputted from the signal transmission section so as to output a first signal for controlling the signal to control the operation of the data buses.

Abstract: Disclosed is an apparatus for controlling an enable interval of a signal controlling an operation of data buses which connect a bit line sense amplifier with a data sense amplifier according to a variation of an operational frequency of a memory device. The apparatus comprises a pulse width control section for changing the pulse width of an input signal depending on the operational frequency of the memory device after receiving the input signal, a signal transmission section for buffering a signal outputted from the pulse width control section, and an output section for receiving a signal outputted from the signal transmission section so as to output a first signal for controlling the signal to control the operation of the data buses.

Abstract: The present invention discloses a circuit for controlling a timing of overdriving a core voltage (internal voltage) which is a driving voltage of a sense amplifier of a memory device and a duration of the overdriven core voltage, and a method for easily measuring the timing and duration. A device for controlling an operation of an internal voltage generator includes an internal voltage driver for outputting an internal voltage to an output terminal, an internal voltage over-driver for compensating for a potential level of the output terminal, and a controller for controlling an enable timing and a disable timing of the internal voltage over-driver. The controller receives a first control signal and outputs a second control signal, and the second control signal is generated after a predetermined time from reception of the first control signal, an operation of the internal voltage over-driver being controlled according to the second control signal.

Abstract: Provided is a circuit for controlling a data bus connecting a bitline sense amplifier to a data sense amplifier in accordance with a variation of an operating frequency of a memory device, being comprised of a pulse width adjusting circuit for varying a pulse width of an input signal in accordance with the operating frequency of the memory device after receiving the input signal, a signal transmission circuit for buffing a signal outputted from the pulse width adjusting circuit, and an output circuit for outputting a first signal to control the data bus in response to a signal outputted from the signal transmission circuit.

Abstract: An internal voltage generator of a semiconductor device features a tuning unit, a characteristic controller and an internal voltage generating unit. The tuning unit receives a test mode signal, an external signal and a signal stored in an internal setup device, and outputs a control signal. The characteristic controller receives the control signal, and outputs a characteristic controlling signal. The internal voltage generating unit receives a reference input signal and the characteristic controlling signal, and controls a characteristic of an internal voltage.

Abstract: A dynamic random access memory (DRAM) features an address counter strobe test mode device including a reference pulse generator, an address counter strobe test mode unit, an internal address counter unit, and an address decoding unit. The reference pulse generator receives an external clock signal and generates an internal clock signal. The address counter strobe test mode unit receives the internal clock signal and outputs an address strobe signal, wherein a pulse width and a pulse generating time of the address strobe signal are regulated in response to a plurality of control signals outputted from a mode register set. The internal address counter unit receives an external address signal and outputs an internal address signal in response to the address strobe signal. The address decoding unit decodes the internal address signal. As a result, the address counter strobe test mode device prevents mis-operations caused by mis-addressing in the DRAM.

Abstract: An internal voltage generator of a semiconductor device features a tuning unit, a characteristic controller and an internal voltage generator. The tuning unit receives a test mode signal, an external signal and a signal stored in an internal setup device, and outputs a control signal. The characteristic controller receives the control signal, and outputs a characteristic controlling signal. The internal voltage generator receives a reference input signal and the characteristic controlling signal, and controls a characteristic of an internal voltage.

Abstract: A dynamic random access memory (DRAM) features an address counter strobe test mode device including a reference pulse generator, an address counter strobe test mode unit, an internal address counter unit, and an address decoding unit. The reference pulse generator receives an external clock signal and generates an internal clock signal. The address counter strobe test mode unit receives the internal clock signal and outputs an address strobe signal, wherein a pulse width and a pulse generating time of the address strobe signal are regulated in response to a plurality of control signals outputted from a mode register set. The internal address counter unit receives an external address signal and outputs an internal address signal in response to the address strobe signal. The address decoding unit decodes the internal address signal. As a result, the address counter strobe test mode device prevents mis-operations caused by mis-addressing in the DRAM.

Abstract: A buffering circuit of a semiconductor memory device is provided with a plurality of buffers divided into groups, comprising: a first controller for generating a first enable signal in response to a refresh signal and a clock enable signal; a second controller for generating a second enable signal in response to an auto-refresh signal and the first enable signal; a first buffer block including at least one of signal input buffers controlled by the first enable signal; and a second buffer block including at least one of signal input buffers controlled by the second enable signal. The groups of the buffers are independently assigned to their corresponding enable signals.

Abstract: A buffering circuit of a semiconductor memory device is provided with a plurality of buffers divided into groups, comprising: a first controller for generating a first enable signal in response to a refresh signal and a clock enable signal; a second controller for generating a second enable signal in response to an auto-refresh signal and the first enable signal; a first buffer block including at least one of signal input buffers controlled by the first enable signal; and a second buffer block including at least one of signal input buffers controlled by the second enable signal. The groups of the buffers are independently assigned to their corresponding enable signals.

Abstract: Provided is a circuit for controlling a data bus connecting a bitline sense amplifier to a data sense amplifier in accordance with a variation of an operating frequency of a memory device, being comprised of a pulse width adjusting circuit for varying a pulse width of an input signal in accordance with the operating frequency of the memory device after receiving the input signal, a signal transmission circuit for buffing a signal outputted from the pulse width adjusting circuit, and an output circuit for outputting a first signal to control the data bus in response to a signal outputted from the signal transmission circuit.