Abstract: The present invention relates to a method for recovering methane gas by adding a gas mixture containing N2 and CO2 gases to natural gas hydrate and reacting them. The method for recovering methane gas from natural gas hydrate of the present invention comprises the step of replacing CH4 gas in natural gas hydrate with a gas mixture containing N2 and CO2 gases by adding the gas mixture to the natural gas hydrate. The method for recovering methane gas of the invention assures a recovery rate of CH4 gas much higher than prior art method without dissociating natural gas hydrate layer and utilization of flue gas as a gas mixture containing N2 and CO2 gases, which makes possible its practical application for the production of natural gas in terms of economy and environmental protection.

Abstract: An apparatus to back up heterogeneous terminal user information in an IP terminal includes a terminal connection interface, a temporary synchronization storage unit, a synchronization controller, and a data converter. The terminal connection interface connects to a heterogeneous terminal. In the apparatus and its method, the temporary synchronization storage unit temporarily stores phone number information of the heterogeneous terminal. Upon connecting to the heterogeneous terminal, the synchronization controller sets synchronization with the heterogeneous terminal and stores phone number information of the heterogeneous terminal. The data converter performs data conversion between the stored phone number information of the heterogeneous terminal and stored phone number information of the IP terminal.

Abstract: Embodiments feature a sensor including a nanostructure and methods for manufacturing the same. In some embodiments, a sensor includes a substrate, a first electrode disposed on the substrate, and a second electrode disposed on the substrate. The second electrode is spaced apart from the first electrode and surrounding the first electrode. The sensor includes at least one nanostructure contacting the first electrode and the second electrode, in which the nanostructure is configured to vary an electrical characteristic according to an object to be sensed.

Abstract: A steel having an improved tensile strength includes a first layer formed of an ultra-low carbon steel; and a second layer that is formed in contact with the first layer, includes a first surface opposite to the first layer, is formed of a solid solution obtained by solid-solving nitrogen in the ultra-low carbon steel, and has a structure substantially the same as a structure of the first layer.

Abstract: The present invention relates to a system for and a method of manufacturing a linear gear (rack gear), in which a forming roll and a guide roll are used to form gear teeth in a sequential manner so as not to require a high load, thereby enabling to easily manufacture the rack gear. A system for manufacturing a rack gear according to the invention includes a forming roll having a convexo-concave portion formed on a part of the surface contacting with a linear bar, a guide roll adapted to roll while facing the forming roll, and at least one support member for supporting the linear bar so as to allow the linear bar to linearly move.

Abstract: An apparatus to back up heterogeneous terminal user information in an IP terminal includes a terminal connection interface, a temporary synchronization storage unit, a synchronization controller, and a data converter. The terminal connection interface connects to a heterogeneous terminal. In the apparatus and its method, the temporary synchronization storage unit temporarily stores phone number information of the heterogeneous terminal. Upon connecting to the heterogeneous terminal, the synchronization controller sets synchronization with the heterogeneous terminal and stores phone number information of the heterogeneous terminal. The data converter performs data conversion between the stored phone number information of the heterogeneous terminal and stored phone number information of the IP terminal.

Abstract: The present invention relates to a method for recovering methane gas by adding a gas mixture containing N2 and CO2 gases to natural gas hydrate and reacting them. The method for recovering methane gas from natural gas hydrate of the present invention comprises the step of replacing CH4 gas in natural gas hydrate with a gas mixture containing N2 and CO2 gases by adding the gas mixture to the natural gas hydrate. The method for recovering methane gas of the invention assures a recovery rate of CH4 gas much higher than prior art method without dissociating natural gas hydrate layer and utilization of flue gas as a gas mixture containing N2 and CO2 gases, which makes possible its practical application for the production of natural gas in terms of economy and environmental protection.

Abstract: The present invention is for preventing a charge pump from an unnecessary output voltage loss generated by a threshold voltage of a metal-oxide silicon (MOS) transistor. An apparatus for amplifying an inputted voltage includes an amplifying block including at least two pumping units for amplifying the inputted voltage to generate an output voltage; and at least two pumping capacitors, each coupled between two pumping units for supplying a charge in order to amplifying the output voltage of each pumping unit, wherein the pumping unit has a transferring block for transmitting the inputted voltage; and an activation block for activating the transferring block.

Abstract: Provided is a method for nitriding a metal in a salt bath by using a non-cyanide salt and a nitrided metal manufactured using the same. The method includes the steps of: immerging at least one salt selected from the group consisting of KNO3, KNO2, Ca(NO3)2, NaNO3 and NaNO2 into the salt bath; melting the salt by heating and maintaining the molten salt at a predetermined temperature; and submerging the metal in the salt bath. Nitriding in non-cyanide salts, such as potassium nitrate (KNO3), potassium nitrite (KNO2), sodium nitrate (NaNO3), sodium nitrite (NaNO2), calcium nitrate (Ca(NO3)2) and their mixtures, is capable of solving an environmental pollution problem and reducing a cost. Also, the method is capable of increasing nitrided depth of the metal two to six times compared to conventional nitriding methods. As a result, the method can be carried out in various application fields.

Abstract: A unit cell included in a non-volatile dynamic random access memory (NVDRAM) includes a control gate layer coupled to a word line; a capacitor for storing data; a floating transistor for transmitting stored data in the capacitor to a bit line, gate of the floating transistor being a single layer and serving as a temporary data storage; and a first insulating layer between the control gate layer and the gate of the floating transistor, wherein a voltage supplied to body of the floating transistor is controllable.

Abstract: A method for operating a non-volatile dynamic random access memory (NVDRAM) device having a plurality of memory cells, each cell having a capacitor and a transistor having a floating gate includes the steps of (A) preparing a power-on mode for performing a DRAM operation; and (B) preparing a power-off mode for holding stored data in the memory cell.

Abstract: The present invention relates to a transistor of a volatile memory device with gate dielectric structure capable of trapping charges and a method for fabricating the same. The transistor in a cell region of a volatile memory device includes a substrate of a first conductive type; a gate dielectric structure capable of trapping charges and formed on the substrate; a gate formed on the gate dielectric structure; a gate insulation layer formed on the gate; a source/drain of a second conductive type formed in a predetermined region of the substrate disposed beneath each lateral side of the gate; and a channel ion implantation region of the first conductive type formed in a predetermined region of the substrate disposed beneath the gate.

Abstract: A unit cell included in a non-volatile dynamic random access memory (NVDRAM) includes a control gate layer coupled to a word line; a capacitor for storing data; a floating transistor for transmitting stored data in the capacitor to a bit line, gate of the floating transistor being a single layer and serving as a temporary data storage; and a first insulating layer between the control gate layer and the gate of the floating transistor, wherein a voltage supplied to body of the floating transistor is controllable.

Abstract: A unit cell included in a non-volatile dynamic random access memory (NVDRAM) includes a control gate layer coupled to a word line; a capacitor for storing data; a floating transistor for transmitting stored data in the capacitor to a bit line, gate of the floating transistor being a single layer and serving as a temporary data storage; and a first insulating layer between the control gate layer and the gate of the floating transistor, wherein a voltage supplied to body of the floating transistor is controllable.

Abstract: The present invention is for preventing a charge pump from an unnecessary output voltage loss generated by a threshold voltage of a metal-oxide silicon (MOS) transistor. An apparatus for amplifying an inputted voltage includes an amplifying block including at least two pumping units for amplifying the inputted voltage to generate an output voltage; and at least two pumping capacitors, each coupled between two pumping units for supplying a charge in order to amplifying the output voltage of each pumping unit, wherein the pumping unit has a transferring block for transmitting the inputted voltage; and an activation block for activating the transferring block.

Abstract: The present invention relates to a transistor of a volatile memory device with gate dielectric structure capable of trapping charges and a method for fabricating the same. The transistor in a cell region of a volatile memory device includes a substrate of a first conductive type; a gate dielectric structure capable of trapping charges and formed on the substrate; a gate formed on the gate dielectric structure; a gate insulation layer formed on the gate; a source/drain of a second conductive type formed in a predetermined region of the substrate disposed beneath each lateral side of the gate; and a channel ion implantation region of the first conductive type formed in a predetermined region of the substrate disposed beneath the gate.

Abstract: A driving circuit for use in a non-volatile dynamic random access memory (NVDRAM) having a nonconductor which can trap electrons or holes includes an internal supply voltage generator for generating the plurality of internal supply voltages, each having at least two different voltage levels; a mode controller for determining an operation mode of the NVDRAM; a voltage level selector for selecting one voltage level of each internal supply voltage in response to the operation mode to thereby outputs the selected voltage level of each internal supply voltage to the row decoding block and the core area; a row decoding block for receiving the internal supply voltages and outputting the internal supply voltages in response to an inputted address; and a core area having a plurality of unit cells, each storing a data, for accessing the data in response to inputted voltage levels of the plurality of internal supply voltages.

Abstract: A method for operating a non-volatile dynamic random access memory (NVDRAM) device having a plurality of memory cells, each cell having a capacitor and a transistor having a floating gate includes the steps of (A) preparing a power-on mode for performing a DRAM operation; and (B) preparing a power-off mode for holding stored data in the memory cell.

Abstract: A unit cell included in a non-volatile dynamic random access memory (NVDRAM) includes a control gate layer coupled to a word line; a capacitor for storing data; a floating transistor for transmitting stored data in the capacitor to a bit line, gate of the floating transistor being a single layer and serving as a temporary data storage; and a first insulating layer between the control gate layer and the gate of the floating transistor, wherein a voltage supplied to body of the floating transistor is controllable.

Abstract: A semiconductor device and a method for fabricating the same is disclosed, which minimizes device degradation, minimizes noises, and simplifies the fabrication process. The device includes a substrate having a first semiconductor layer, a buried insulating film, and a second semiconductor layer stacked; a field oxide film for separating the second semiconductor layer into a first region and a second region; a recess region formed in a particular region of the second region; gate insulating films and gate electrodes formed in stacks on each of a particular region in the first region and the recess region in the second region; first impurity regions formed in surfaces of the second semiconductor layer on both sides of the gate electrode in the first region; and second impurity regions formed in surfaces of the second semiconductor layer on both sides of the gate electrode in the recess region in the second region so that the second semiconductor layer below the gate electrode is fully depleted.